CEMS study on aluminium implanted iron

Up to now a great deal of investigations in ion beam mixing of iron-aluminium layers are known. However, the easier way to produce such layers by direct implantation of aluminium ions in iron is less studied. In the present work aluminium implanted iron layers are studied. Iron samples were implanted with aluminium ions at 50, 100, and 200 keV, respectively, with doses between 5×10¹⁶ and 5×10¹⁷ cm⁻². Independent of energy, at doses up to 2×10¹⁷ cm⁻², besides alpha iron further magnetic fractions with a Fe₃Al-like structure are formed while at a dose of 5×10¹⁷ cm⁻² amorphous nonmagnetic components are formed.     

Spatial distribution, build-up, and annealing of radiation defects in silicon implanted by high-energy krypton and xenon ions

An x-ray diffraction study of defect formation in silicon irradiated by Kr⁺ (210 MeV, 8×10¹²−3×10¹⁴ cm⁻²) and Xe⁺ (5.6 BeV, 5×10¹¹−5×10¹³ cm⁻²) ions is reported. It has been established that irradiation produces a defect structure in the bulk of silicon, which consists of ion tracks whose density of material is lower than that of the host. The specific features of defect formation are discussed taking into account the channeling of part of the ions along the previously formed tracks and the dominant role of electron losses suffered by the high-energy ions. It is shown that the efficiency of incorporation of stable defects by irradiation with high-energy ions is lower than that reached by implanting medium-mass ions with energies of a few hundred keV. Fiz. Tverd. Tela (St. Petersburg) 40, 1627–1630 (September 1998)     

Electrical properties of thermal donors formed in silicon under elastic tensile stress

The electrical properties of thermal donors formed in the bulk and near-surface regions in silicon samples with (3–9) × 10¹⁷ cm⁻³ oxygen concentrations under elastic tensile stress σ of about 1 GPa have been studied. The original method allowing us to control an introduced elastic tensile stress during the thermal donor’s formation at T = 450°C by a double-crystal X-ray diffractometer has been used. The formation of thermal donors in silicon with a high oxygen concentration of 9.3 × 10¹⁷ cm⁻³ under tensile stress has been found to be less effective than in silicon with a low oxygen concentration of (3–5) × 10¹⁷ cm⁻³. Single-charged donors are formed in silicon with a low oxygen concentration under tensile stress while double-charged donors are formed in silicon with a high oxygen concentration.     

Fluence dependant formation of <Emphasis Type="Italic">β</Emphasis>-SiC by ion implantation and thermal annealing

The β-SiC nanocrystals were synthesized by the implantation of carbon ions (C⁻) into silicon followed by high-temperature annealing. The carbon fluences of 1×10¹⁷, 2×10¹⁷, 5×10¹⁷, and 8×10¹⁷ atoms/cm² were implanted at an ion energy of 65 keV. It was observed that the average size of β-SiC crystals decreased and the amount of β-SiC crystals increased with the increase in the implanted fluences when the samples were annealed at 1100 °C for 1 h. However, it was observed that the amount of β-SiC linearly increased with the implanted fluences up to 5×10¹⁷ atoms/cm². Above this fluence the amount of β-SiC appears to saturate. The Fourier Transform Infrared Spectroscopy (FTIR), Raman Spectroscopy, and X-ray diffraction (XRD) techniques were used to characterize the samples.     

Influence of irradiation damage on formation of iron nitrides in α-Fe

Pure iron foils were implanted with nitrogen ions at energy of 10 keV and with 1×10¹⁷N ions/cm². Doses of pre-self-implantation were 5×10¹⁶ and 3.7×10^{16 17}Fe ions/cm² respectively, and the iron ion energy was 27 keV. A comparison of iron nitrides formed on surfaces with and without pre-self-implantation has been obtained. The results show that radiation damage apparently influences the formation of iron nitrides. The formation and transformation of nitrides after N implantation or after annealing can be explained by a model of implantation-induced transformation.     

Raman scattering in a near-surface n-GaAs layer implanted with boron ions

Structure in the Raman scattering spectra of near-surface n-GaAs layers (n=2×10¹⁸ cm⁻³) implanted with 100 keV B⁺ ions in the dose range 3.1×10¹¹–1.2×10¹⁴ cm⁻² is investigated. The qualitative and quantitative data on the carrier density and mobility and on the degree of amorphization of the crystal lattice and the parameters of the nanocrystalline phase as a result of ion implantation are obtained using a method proposed for analyzing room-temperature Raman spectra. Fiz. Tverd. Tela (St. Petersburg) 41, 1495–1498 (August 1999)     

X-ray diffraction studies of silicon implanted with high-energy erbium ions

Silicon crystals after implantation of erbium ions with energies in the range 0.8–2.0 MeV and doses in the range 1×10¹²–1×10¹⁴ cm⁻² have been studied by two-and three-crystal x-ray diffraction. Three types of two-crystal reflection curves are observed. They correspond to different structural states of the implanted layers. At moderate doses (1×10¹²–1×10¹³ cm⁻²) a positive strain is observed, due to the formation of secondary radiation defects of interstitial type. An increase of the implantation dose is accompanied by the formation of an amorphous layer separating the bulk layer and a thin monocrystalline surface layer. At an implantation dose of 1×10¹⁴ cm⁻² the monocrystalline surface layer is completely amorphized. Parameters of the implantation layers are determined. A model of the transformation of structural damage is discussed. Fiz. Tverd. Tela (St. Petersburg) 39, 853–857 (May 1997)     

Blistering of rhenium irradiated with 21keV helium ions

This paper describes blistering of rhenium following 21 keV He⁺-ion irradiation at temperatures between 300 K and 1200 K. Blistering starts at 300 K at a dose of 3×10¹⁷ ions/cm². The most probable blister diameter varies from 4400 ? at 300 K to 10100 ? at 1200 K. The blister depth τ _bl , the blister diameter φ _bl and the blister heighth _bi show a distribution. From the observations one could derive the following relationships:h _bl = 0.35φ _bl ; τ _bl =3.43φ _bl ^2/3 . The erosion yieldE _y due to blistering is function of doseE _y =0.51 atoms/ion at 3×10¹⁷ ions/cm²,E _y =0.56 atoms/ion at 6×10¹⁷ ions/cm² andE _y =0.14 atoms/ion at 3×10¹⁸ ions/cm². The sputtering yieldS (21 keV) is estimated to be ∼0.1 atom/ion. The corresponding surface regression is 44? at 3×10¹⁷ ions/cm² and 1323 ? at 9×10¹⁸ ions/cm². Surface regression has therefore little influence on the observations at low doses. Work performed at the Mathematicals Science Department of S.C.K./C.E.N. at Mol (Belgium)     

Effect of nitrogen ions on the structural,optical, and thermal properties of polyvinyl alcohol/starch blend

This work examines the properties of polyvinyl alcohol (PVA)/starch film containing glycerol as a plasticizer under exposure to different nitrogen ion fluence. The prepared PVA/starch blend was irradiated with ion fluence from 3 × 10¹⁷ to 12 × 10¹⁷ ions.cm⁻². From FTIR, the ion beam irradiation attack and weakens the C–H bond in PVA/starch blend. From XRD findings, the crystallite size of the blend decreased at 3 × 10¹⁷ ions/cm² while it increased at higher fluence up to 9 × 10¹⁷ ions/cm². This indicates the degradation of the blend at low ion fluence compared to crosslinking at high ion fluence. Also, the optical bandgap of the blend was decreased with an increase in ion fluence. Furthermore, the effect of N⁺ ions on some optical dispersion parameters is studied. The thermal stability of the PVA/starch blend shows a decrease in thermal stability upon irradiation with 3 × 10¹⁷ ions/cm² compared to higher thermal stability at higher doses up to 9 × 10¹⁷ ions/cm².     

Influence of Ar, Ne, Xe, and CCl4 impurities on luminescence kinetics of Cd II ions (5s22D5/2-5p2P3/2 transition, λ = 441.6 nm) in He-Cd mixture

The luminescence kinetics of the Cd II ion at a wavelength of 441.6 nm has been studied experi-mentally in a high-pressure He-Cd mixture in the presence of Ar, Ne, Xe, and CCl₄ impurities. Cadmium ions were excited through the bombardment of a cadmium foil heated up to 240°C by a pulsed electron beam with an electron energy of 150 keV, a pulse duration of 3 ns, and a current of 500 A. The constants of collisional quenching of the Cd II 5s ^{2 2} D _5/2 level by Ar, Ne, and Xe atoms and CCl₄ molecules and the integral luminescence quenching constants of this level in the helium medium by these impurity gases have been determined. The constants of collisional quenching appeared to be 8.1 × 10⁻¹² (Ar), 1.2 × 10⁻¹² (Xe), 1.5 × 10⁻¹³ (Ne), and 1.8 × 10⁻¹⁰ cm³/s (CCl₄, for λ = 325 nm), while the integral constants were found to be, respectively, 4.1 × 10⁻¹¹, 3.4 × 10⁻¹¹, 9.5 × 10⁻¹², 1.4 × 10⁻⁹ cm³/s for Ar, Ne, Xe, and CCl₄ at a buffer gas pressure of 1 atm. Original Russian Text ? A.I. Miskevich, Liu Tao, 2009, published in Optika i Spektroskopiya, 2009, Vol. 107, No. 1, pp. 45–49.     

Free carrier concentration and conductivity in chlorine doped lead telluride

Plasma resonance in the IR reflection spectra is used to measure the concentration and relaxation time of free charge carriers along with the conductivity in PbTe_{1 − x} Cl _x solid solutions. It is found that with increasing the chlorine concentration, the electron concentration and conductivity increase and reach saturation at x = 0.03 (n = 5.5 × 10¹⁹ cm⁻³, σ = 3750 Ohm⁻¹ · cm⁻¹). The relaxation time decreases with increasing the chlorine concentration and reaches the minimum value of 2.2 × 10⁻¹⁴ s at x = 0.03; then, it almost does not change.     

Optical properties of the ternary compound Cd<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Hg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Se:Co

We present the results of experimental studies of the optical properties of cobalt-doped Cd _x H_1−x Se (x = 0.18) single crystals with cobalt ion concentrations of NCo = 5·10¹⁸, 5·10¹⁹, and 1·10²⁰ cm⁻³ at T = 90 K and 300 K. The composition (x = 0.18) of the Cd _x Hg_1−x Se solid solution was selected so that the hypothetical resonance level is found on the bottom of the conduction band. We show that the cobalt ions in the mercury selenide can form a resonance donor level only for cobalt concentrations N_Co < 5·10¹⁸ cm⁻³. For N_Co ∼ 5·10¹⁸ cm⁻³, the cobalt ions substitute for mercury atoms, forming a solid solution and leading to an increase in the bandgap width and a change in the physical properties. The solubility of cobalt in the HgSe lattice can be greater than 5%–10%. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 74, No. 1, pp. 73–77, January–February, 2007.     

ESR of V4+ in α-RbTiOPO4 single crystals

We have recorded and investigated the ESR spectrum of vanadium-doped α-RbTiOPO₄ single crystals in the temperature interval 77–300 K. Two types of structurally distinct centers, V1 and V2, with a 4:1 ratio of the peak intensities were observed. The angular dependences of the resonance magnetic fields are described by a spin Hamiltonian corresponding to axial symmetry with the parameters g _∥1=1.9305, g _⊥1=1.9565, A _∥1=−168.2×10⁻⁴cm⁻¹, and A _⊥1=−54.3×10⁻⁴cm⁻¹ for V1 centers and g _∥2=1.9340, g _⊥2=1.9523, A _∥2=−169.0×10⁻⁴cm⁻¹, and A _⊥2=−55.2×10⁻⁴cm⁻¹ for V2 centers. A model of a paramagnetic center is proposed: The vanadium ions replace titanium ions in two structurally distinct positions Ti1 and Ti2 (V1 and V2 centers, respectively). The possibility that a VO²⁺ ion forms when α-RbTiOPO₄ crystals and crystals of the KTP group (KTiOPO₄, NaTiOPO₄, α-and β-LiTiOPO₄), studied earlier, are doped with vanadium is discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 534–536 (March 1998)     

ESR study of exchange coupled pairs in copper diethyldithiocarbamate

ESR investigations on exchange coupled pairs of Cu ions in single crystals of Cu(dtc)₂, isomorphously diluted with the corresponding diamagnetic zinc salt, are reported. The spin Hamiltonian parameters for the coupled species (S=1) are:g _‖=2.1025,g ₊=2.031,A=75.1×10⁻⁴ cm⁻¹,B=14.8×10⁻⁴,D=276.0×10⁻⁴ cm⁻¹ andE=46.7×10⁻⁴ cm⁻¹. While theg andA tensors show tetragonal symmetry, the zeor-field splitting tensor is rhombic and has principal axes different from those of theg andA tensors. Intensity measurements made down to 4.2 K indicate that the exchange is ferromagnetic with |FFF| ∼ 10 cm⁻¹. Direct dipole-dipole interaction appears to be the major contribution to the zero-field splitting. A calculation on the distributed point dipole model shows that dipolar interaction is considerably modified by the high covalency of the Cu-S bond and accounts for the rhombic nature of the tensor. The possible exchange mechanisms in Cu(dtc)₂—direct exchange and superexchange through the bridging sulphurs—are discussed.     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Spin-spin interaction of Ni2+ ions in ZnSiF6·6H2O

The angular dependences of the electron spin resonance spectrum of 1% Ni²⁺ ions in a ZnSiF₆·6H₂O matrix are investigated experimentally at 36 GHz and 4.2 K. Besides the main spectrum of the isolated ion, we observed a spectrum due to interacting pairs of Ni²⁺ ions, located in the first (nn) and second (2n) coordination spheres and coupled by, besides the magnetic dipole-dipole interaction, isotropic exchange: J _nn = (−197±1)×10⁻⁴, J _2nα = (−5±1)×10⁻⁴, and J _2nβ = (3±2)×10⁻⁴ cm⁻¹. Lines due to other isolated Ni²⁺ ions, which have a different initial splitting D, are also present in the spectrum with intensity comparable to the pair spectrum. Low-symmetry distortions of the crystal field are observed, caused by a pair of impurity ions located close to one another. It is shown that the previously proposed interpretation is incorrect. Fiz. Tverd. Tela (St. Petersburg) 41, 1602–1608 (September 1999)     

Characteristics of thermally stimulated depolarization phenomena in zinc-oxide ceramics for varistors

The results of experimental investigations and an analysis of the temperature dependences of the thermally stimulated depolarization current are presented for zinc-oxide ceramics suitable for use in high-voltage varistors. A model for the depolarization phenomena is proposed that takes into account charge exchange on localized electronic states on both sides of the intercrystallite potential barrier. The model is used to obtain estimates of the ionization energy and density of shallow (∼0.07 eV, 1×10¹⁷ cm⁻³) and deeper (∼0.2 eV, 1×10¹⁸ cm⁻³) bulk levels and surface-localized levels (∼0.1 eV, 1×10¹³ cm⁻²). Zh. Tekh. Fiz. 67, 60–63 (October 1997)     

Radiation damage of material surfaces under prolonged irradiation with He+ and Ar+ ions with broad energy spectra

The results of studying the redistribution of Be, Al, Ti, Fe, Cu, Zr, Mo, and W atoms incorporated in polycrystalline metal samples under irradiation with He⁺, (He⁺ + Ar⁺), and Ar⁺ ion beams with a broad energy spectrum and an average energy of 10 keV at irradiation doses of 1 × 10²¹ ion/cm² are studied. It is discovered that irradiation at doses exceeding 1 × 10¹⁹ ion/cm² results in local small-crystal formations being produced in a near-surface substrate layer. Their typical dimensions are less than 1–5 μm, and their the density is up to 1–100. They contain incorporated atoms and impurity atoms with a concentration of 0.1–10 at %. Subsequent irradiation at a dose of 1 × 10²⁰ ions/cm² or more leads to disappearance of these formations, mainly because of sputtering processes.     

Nd: YAG laser annealing of gallium-implanted silicon

A Q-switched Nd: YAG laser with a pulse duration of 20 ns was used to investigate effects of laser annealing in gallium implanted silicon. Rutherford backscattering and Hall-effect measurements were performed to evaluate the annealed layer. Differential Hall-effect measurements were carried out to obtain carrier concentration profiles after annealing. It was found that a maximum sheet carrier concentration of 8×10¹⁵ cm⁻² can be obtained for a gallium implantation of 10¹⁶ cm⁻² by laser annealing with an energy density of more than 1.0 J cm⁻². Although the peak carrier concentration was found to be 8.0×10²⁰ cm⁻³, the annealed layer showed polycrystalline structures even after annealing with an energy density up to 4J cm⁻². The annealing took place in the solid phase in this energy density range.     

Spectroscopic studies of copper and carbon ion irradiated polypropylene

The samples of polypropylene (PP) have been irradiated with 120 MeV ⁶⁴Cu⁹⁺ and 70 MeV ¹²C⁵⁺ ion beams, with the fluence ranging from 1 × 10¹³ to 1 × 10¹¹ ions/-cm⁻². UV-VIS and FTIR techniques have been used to study the chemical and optical properties of these irradiated polymers. UV spectra revealed that the optical-gap energy decreases by 54 % with copper ion irradiation at the fluence of 1 × 10¹³ ions/cm², whereas at the same fluence, carbon beam decreases the optical-gap energy by 20%. FTIR analysis of ion irradiated samples revealed the presence of -OH, C = O and C = C bonds. Alkyne formation has been observed only in the case of copper ion irradiation.