Quantum corrections to the conductance of n-GaAs films in a strong magnetic field

The conductance of doped n-GaAs films is studied experimentally as a function of magnetic field and temperature in strong magnetic fields right up to the quantum limit (ħω_c = E _F). The Hall conductance G _xy is virtually independent of temperature T until the transverse conductance G _xx is quite large compared with e ²/h. In strong fields, when G _xx becomes comparable to e ²/h, G _xy starts to depend on T. The difference between the conductances G _xx at the two temperatures 4.2 and 0.35 K depends only weakly on the magnetic field H over a wide range of magnetic fields, while the conductances G _xx themselves vary strongly. The results can be explained by quantum corrections to the conductance as a result of the electron-electron interaction in the diffusion channel. The possibility of quantization of the Hall conductance as a result of the electron-electron interaction is discussed. Pis’ma Zh. éksp. Teor. Fiz. 67, No. 3, 201–206 (10 February 1998)     

Hopping conductivity and activated transport in InxGa1-xAs quantum wells

We present measurements of the diagonal R_xx and off-diagonal R_xy magnetoresistance under quantum Hall conditions on several high electron mobility transistors (HEMT) based on In_xGa_1-xAs quantum wells. From the magnetoresistance tensor we obtain the longitudinal conductivity σ _xx . We study the transport mechanisms near the σ _xx minima at temperatures ranging between 2 K and 35 K; activated transport is the dominant mechanism for temperatures above 7 K while variable range hopping conductivity is significant for lower temperatures. We show that electron-electron correlations should be taken into account to explain the conductivity vs temperature behaviour below 5 K. Finally, we study the behaviour of the localization length as a function of Landau level filling and obtain a critical exponent γ = 3.45±0.15. Received 6 June 2001 and Received in final form 16 October 2001     

Magnetoresistance and Hall effect in La0.8Sr0.2MnO3

A comparative study of the longitudinal ρ _xx and transverse ρ _xy resistivities and magnetic susceptibility χ _ac of La_0.8Sr_0.2MnO₃ single crystals and ceramic samples has been conducted in a wide range of temperatures T=1.7–370 K and magnetic fields, H=0–13.6 T. It turned out that the relation ρ _xy ∼ρ _xx , which is expected to hold in the case of carrier scattering by magnetic fluctuations, applies to the single crystals. In polycrystals, an additional H-dependent contribution to the resistivity tentatively attributed to plane (near grain boundaries) and bulk “defects” of the magnetic sublattice has been detected. The scattering of carriers by these defects does not make a notable contribution to the anomalous Hall effect and magnetic susceptibility χ _ac. As a result, the curve of ρ _xy versus ρ _xx seems to be steeper than a linear dependence. Under the assumption that the materials under investigation are metals with constant carrier concentrations, the conductivity σ=1/ρ _xx due to the critical magnetic scattering calculated in the molecular field approximation reproduces the main features of experimental data, namely, the drop in the amplitude and shift of the resistivity peak near the Curie point with increasing magnetic field H and also a relatively slow change in the derivative dσ/dH with increasing temperature in the region T⩽T _C . The large hole concentration of about two per unit cell derived from Hall measurements indicates that carriers of opposite signs can coexist in these materials. Zh. éksp. Teor. Fiz. 116, 671–683 (August 1999)     

Quantized Hall effect in disordered GaAs layers with 3D spectrum in tilted magnetic fields

The quantum Hall effect structure in the transverse magnetoresistance R _xx and the Hall resistance R _xy of heavily doped GaAs layers with a three-dimensional spectrum of the charge carriers is investigated for different field orientations. The characteristic structures (minima in R _xx and plateaus in R _xy ) shift much more slowly to higher fields and are suppressed much more rapidly in comparison with the expected angular dependence for a two-dimensional system. The results are discussed in terms of the anisotropic change of the three-dimensional conductivity tensor with magnetic field rotation. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 4, 305–308 (25 August 1998)     

On the phase boundaries of the integer quantum Hall effect. Part II

It has been shown that the observation of the transitions between the dielectric phase and the integer-quantum-Hall-effect phases with the quantized Hall conductivity σ _xy ^q ≥ 3e ²/h announced in a number of works is unjustified. In these works, the crossing points of the magnetic-field dependence of the diagonal resistivity ρ _xx at different temperatures T and ω_cτ = 1 have been misidentified as the critical points of the phase transitions. In fact, these crossing points are due to the sign change of the derivative dρ _xx /dT owing to the quantum corrections to the conductivity. Here, ω_c = eB/m is the cyclotron frequency, τ is the transport relaxation time, and m is the effective electron mass.     

Bistability of quantum magnetotransport in a multilayer Ge/p-Ge1−x Six heterostructure with wide potential wells

Two metastable states of a multilayer Ge/p-Ge_1−x Si_x heterosystem with wide (∼ 35 nm) potential wells (Ge) are observed in strong magnetic fields B at low temperatures. In the first state, the Hall resistivity exhibits an inflection near the value ρ_xy=h/e ² scaled to one Ge layer. The longitudinal magnetoresistivity ρ_xx(B) possesses a minimum in the range of fields where this inflection occurs. The temperature evolution of the inflection in ρ_xy(B), the minimum of ρ _xx(B), and the value of ρ_xy at the inflection indicates a weakly expressed state of the quantum Hall effect with a uniform current distribution over the layers. In the second metastable state, an unusually wide plateau near h/2e ² with a very weak field dependence is observed in ρ_xy(B). Estimates show that in these samples the Fermi level lies below but close to the top of the inflection in the bottom of the well. For this reason, the second state can be explained by separation of a hole gas in the Ge layers into two sublayers, and the saturation of ρ_xy(B) near h/2e ² can be explained by the formation of a quantum Hall insulator state. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 4, 290–297 (25 August 1999)     

Preparation, magnetoresistance and magnetocaloric effect of two-layered perovskite La 2.5- x K 0.5+ x Mn 2 O 7+δ

Polycrystalline two-layered perovskite La_2.5-xK_0.5+xMn₂O _{7 + δ} (0 < x < 0.5) samples have been prepared by a modified sol-gel method and their magnetoresistance and magnetocaloric effects have been studied. A large deviation between the metal-insulator (MI) transition temperature (T _ρ ) and the magnetic transition temperature (T_C) is observed. Large magnetoresistance (MR) effects with Δρ/ρ of ∼40% at 12 kOe are obtained in wide temperature ranges. The maximum of the magnetic entropy change peaks at its Curie temperature (T_C), far above its MI transition temperature (T _ρ ). The large magnetic entropy change (∼1.4 J/kg.K) is obtained in the sample La_2.5-xK_0.5+xMn₂O _{7 + δ} (x = 0.35) upon 10 kOe applied magnetic field. Received 2 May 2002 / Received in final form 1st October 2002 Published online 19 December 2002 RID="a" ID="a"e-mail: wzhong@ufp.nju.edu.cn     

On the electron mobility of δ layers in the presence of diamagnetic “ejection” of size-quantization levels

The Hall mobility of electrons is investigated as a function of the population of size-quantization subbands in the two-dimensional electron gas of a δ-doped layer in GaAs with constant total electron density N _s =3.2×10¹² cm⁻² (three initially filled subbands) at T=4.2 K. The population of the subbands is varied by diamagnetic “ejection” of size-quantization levels (i.e., pushing them over the Fermi level) by a magnetic field oriented parallel to the plane of the δ-doped layer. The measurements are made in magnetic fields making small angles (5°) with the plane of the doping. The magnetic field component normal to the plane was used to measure the Hall mobility and density. It is found that the measured Hall mobility as a function of the ejecting magnetic field has a distinct maximum. This maximum is due to an increase in the electron mobility in the first subband (the ground subband is assigned the index 0) and electron redistribution between subbands with in increasing ejecting magnetic field parallel to the plane of the δ layer. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 11, 704–708 (10 December 1997)     

Relation between vortex excitation and thermal conductivity in superconductors

Thermal conductivity κ _xx(T) under a field is investigated in d _{x2 - y2}-wave superconductors and isotropic s-wave superconductors by the linear response theory, using a microscopic wave function of the vortex lattice states. To study the origin of the different field dependence of κ_xx(T) between higher and lower temperature regions, we analyze the spatially-resolved thermal conductivity around a vortex at each temperature, which is related to the spectrum of the local density of states. We also discuss the electric conductivity in the same formulation for a comparison. Received 8 December 2001 and Received in final form 20 March 2002 Published online 6 June 2002     

Magnetic field dependence ofT c and temperature dependence ofH c2 in layered superconductors with open normal state Fermi surface

A theoretical framework for treating the effects of magnetic fieldH on the pairing theory of superconductivity is considered, where the field is taken in an arbitrary direction with respect to crystal axes. This is applicable to closed, as well as open normal state Fermi surface (FS), including simple layered metals. The orbital effects of the magnetic field are treated semiclassically while retaining the full anisotropic paramagnetic contribution. Explicit calculations are presented in the limits |H| → |H _c2(T)|,T ∼ 0 andT →T _c(|H|), |H| ∼ 0. Effects of weak nonmagnetic impurity scattering, without vertex corrections, have also been taken into account in a phenomenological way. The final results for the case of open FS and layered materials are found to differ considerably from those of the closed FS. For example, an important parameter,h(T=0)=|H_c2(0)|/[-Tδ|H _c2 T|δT]_T{s0} for the case of a FS open ink _z-direction with thek _z-bandwidth, 4t ₃, very small compared to the Fermi energy,E _F, is close to 0.5906, compared to 0.7273 for the closed FS, in the clean limit. Analytical results are given for the magnetic field dependence ofT _c and the temperature dependence of H _c2 for a model of layered superconductors with widely open FS. For a set of band structure parameters for YBa₂Cu₃O₇ used elsewhere, we find reasonable values for the upper critical fieldH _c2(0), the slope (dH _c2/dT)_{T c0}, anisotropic coherence lengths ζ_i(T=0),i=x, y, z, and (dT _c/d|H|)_{|H| → 0}.     

Temperature dependence of effective mobility edge and inelastic scattering time in silicon MOS inversion layers in strong magnetic fields

Temperature (T) dependence on Hall conductivity (σ_xy) in Si MOS inversion layers measured in 15 T at T=1.4?10 K is investigated by comparing dσ_xy/dN_s, N_s electron concentration, to the calculation based on an effective mobility edge (E_c) model. Temperature dependence of inelastic scattering time is discussed in connection to the T-dependence of E_c.     

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

We report the results of an experimental study of the magnetoresistance ρ_xx and ρ_xy in two samples of p‐Si/SiGe with low carrier concentrations p = 8.2 × 10¹⁰ cm^‐2 and p = 2 × 10¹¹ cm^‐2. The research was performed in the temperature range of 0.3–2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two‐dimensional (2D) channel plane. The large in‐plane magnetoresistance can be explained by the influence of the in‐plane magnetic field on the orbital motion of the charge carriers in the quasi‐2D system. The measurements of ρ_xx and ρ_xy in the tilted magnetic field showed that the anomaly in ρ_xx, observed at filling factor ν = 3/2 is practically nonexistent in the conductivity σ_xx. The anomaly in σ_xx at ν = 2 might be explained by overlapping of the levels with different spins 0 ↑ and 1 ↓ when the tilt angle of the applied magnetic field is changed. The dependence of g‐factor g^*(Θ)/g^*(0⁰) on the tilt angle Θ was determined.     

Scaling in the quantum Hall effect regime in n-InGaAs/GaAs nanostructures

The longitudinal ρ _xx (B) and Hall ρ _xy (B) magnetoresistances are investigated experimentally in the integer quantum Hall effect (QHE) regime in n-InGaAs/GaAs double quantum well nanostructures in the range of magnetic fields B = (0–16) T and temperatures T = (0.05–70) K before and after IR illumination. The results are evaluated within the scaling hypothesis with regard to electron-electron interaction.     

Fractional quantum Hall effect at a suppressed energy gap

In the fractional quantum Hall effect regime, the diagonal (ρ_xx) and Hall (ρ_xy) magnetoresistivity tensor components of the two-dimensional electron system (2DES) in gated GaAs/Al_xGa_1−x As heterojunctions are measured together with the capacitance between 2DES and the gate. The 1/3-and 2/3-fractional quantum Hall effects are observed at rather low magnetic fields where the corresponding fractional minima in the thermodynamic density of the states have already disappeared, thus, implying the suppression of the quasiparticle energy gaps. The text was submitted by the authors in English.     

Quantum Hall effect in the bulk semiconductors bismuth and antimony tellurides: Proof of the existence of a current-carrier reservoir

The quantization of the Hall resistivity ρ_xy in the form of plateaus in the dependence of ρ_xy on the magnetic field B is observed in the semiconductors Bi₂Te₃ and Sb₂Te₃; the minima of the transverse magnetoresistivity ρ_xx correspond to the start of the plateaus. The quantization of ρ_xy is due to the presence of a current-carrier reservoir. An impurity band with a high density of states or a different band with a much higher current-carrier effective mass serves as the reservoir. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 11, 754–758 (10 December 1999)     

Influence of magnetic field on the superconducting transition in a Nd1.82Ce0.18CuO4−δ film

The temperature and magnetic-field dependences of the resistivity ρ and Hall effect R(j‖ab, B‖c) in a Nd_1.82Ce_0.18CuO_4−δ single crystal film (T _c =6 K) is investigated at temperatures 1.4≤T≤20 K and magnetic fields 0≤B≤5.5 T. At the lowest temperature T=1.4 K the resistive state (exhibiting resistivity and the Hall effect) arises in a magnetic field B=0.5 T. A transition to the normal state is completed at B _c 2≃3 T, where the Hall coefficient becomes nearly constant. The negative magnetoresistance due to the weak-localization effect in the normal state is observed for B>3 T. The nonmonotonic behavior and the inversion of the sign of R(B) in the mixed state are explained in a reasonable way by the flux-flow model with the effect of pinning taken into account. Pis’ma Zh. éksp. Teor. Fiz. 64, No. 6, 407–411 (25 September 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

Coherence transition in granular YBa2Cu3O7-δ, YBa2Cu2.95Zn0.05O7-δ, and YBa1.75Sr0.25Cu3O7-δ superconductors

We have studied experimentally the electrical magneto-conductivity near the superconducting transition of YBa₂Cu₃O_7-δ, YBa₂ (Cu_2.95Zn_0.05)O_7-δ and Y(Ba_1.75Sr_0.25)Cu₃O_7-δ polycrystalline samples. The measurements were performed in magnetic fields ranging from 0 to 400 Oe applied parallel to the current orientation. The results show that the resistive transition of these systems proceeds in two stages. The pairing transition occurs at the bulk critical temperature T_c, where superconductivity is stabilized within small and homogeneous regions of the sample generically called grains. The regime of approach to the zero resistance state reveals the occurrence of a coherence transition at a lower temperature T_c0. This transition is related to the connective nature of the granular samples and is controlled by fluctuations of the order-parameter phase of individual grains. Our experiments show that the Zn-doping, besides depressing the pairing critical temperature, strongly enlarges the temperature range dominated by effects related to the coherence transition. The substitution of Ba by Sr causes only a small reduction of T_c, but also enhances significantly the effects related to the grain coupling phenomenology. In general, our results indicate that these impurity substitutions in YBa₂Cu₃O_7-δ produce or magnify the granularity at a microscopic level, enhancing the effects of phase fluctuations in the conductivity near the transition.     

Weak-field Hall resistance and effective carrier density measurements across the metal-insulator transition in Si-MOS structures

The weak-field Hall voltage in Si-MOS structures with different mobility is studied on both sides of the metal-insulator transition. In the vicinity of the critical density on the metallic side of the transition, the Hall voltage is found to deviate by 6–20 % from its classical value. The deviation does not correlate with the strong temperature dependence of the diagonal resistivity ρ _xx (T). In particular, the smallest deviation in R _xy is found in the highest-mobility sample, which exhibits the largest variation in the diagonal resistivity ρ _xx with temperature. Pis’ma Zh. éksp. Teor. Fiz. 70, No. 1, 48–52 (10 July 1999) Published in English in the original Russian journal. Edited by Steve Torstveit.     

New type of conductivity?

Experiments yielded rapid rise in the Hall gr_xy and magnetoresistance ρ_xx, ρ_zz in Hg_0.76Cd_0.24Te to almost linear dependence in strong magnetic fields. This paper relates it to the states, which are extended at the Hall edge for ρ_xy and between the Hall edges for ρ_xx, ρ_zz, while bulk states are localized. Theory agrees with experiments, and suggests that thin enough samples may have zero magnetoresistance in strong enough magnetic fields.     

Universal explicit expression for quantum Hall conductance at any temperatures and chemical potentials

This paper generalises the theorem already obtained [Solid State Commun. 127 (2003) 505] for the high mobility, dissipationless, integer quantum Hall systems at T=0 K to the T>0 K situations. The results obtained are again suitable at both microscopic and macroscopic scales. In comparison [Solid State Commun. 127 (2003) 505], this generalised form gives a universal explicit expression for the Hall conductance σ_xy(μ,T) between any two points selected in such a system as a function of chemical potential and temperature. Further, thermal deviation Δσ_xy(μ,T) from the exact quantised values of σ_xy(μ,T) and the minimum slopes of Hall plateaux in the T>0 cases, observed already in experiments, are also derived in theory. Similar to those in the T=0 K case [Solid State Commun. 127 (2003) 505], the overall quantum Hall behaviour of the system can again be obtained from this theory by simply selecting two points on the two Hall contacts.