Observations of nascent superfluidity in a bilayer two-dimensional electron system at

Single-layer longitudinal and Hall resistances have been measured in a bilayer two-dimensional electron system at ν_T=1 with equal but oppositely directed currents flowing in the two layers. At small effective layer separation and low temperature, the bilayer system enters an interlayer coherent state expected to exhibit superfluid properties. We detect this nascent superfluidity through the vanishing of both resistances as the temperature is reduced. This corresponds to the counterflow conductivity rising rapidly as the temperature falls, reaching by . This supports the prediction that the ground state of this system is an excitonic superfluid.     

Nuclear-spin-lattice relaxation in a bilayer quantum Hall system

We examined the electron spin degree of freedom around the total Landau-level filling factor ν=1 in a bilayer system via nuclear spins. In a balanced bilayer system, nuclear-spin-lattice relaxation rate 1/T₁, which probes low-energy electron spin fluctuations, increases gradually as the system is driven from the quantum Hall (QH) state through a phase transition to the compressible state. This result demonstrates that the electron spin degree of freedom is not frozen either in the QH or compressible states. Furthermore, as the density difference between the two layers is increased from balanced bilayer to monolayer configurations, 1/T₁ around ν=1 shows a rapid yet smooth increase. This suggests that pseudospin textures around the bilayer ν=1 system evolves continuously into the spin texture for the monolayer system.     

Phase transitions in the quantum Hall liquid in a quantum wire

Two scenarios for the collapse of the ν=1 quantum Hall liquid (QHL) state, with the effective quantum wire (QW) width defined by the Fermi vector k_F, are studied. Here, ν for the QW is defined as the filling factor of Landau levels (LL) at the center of the QW. In the first one there is no electron redistribution at critical magnetic field , where the Fermi energy, E_F, coincides with the bottom of the empty upper spin-split LL. For the ν=1 state is unstable due to exchange-correlation effects and lateral confinement. In the second scenario, a transition to the ν=2 state occurs, with much smaller width, at . The latter scenario is analyzed in the Hartree–Fock approximation (HFA). Here the Hartree contribution to the total energy affects drastically due to strong electron redistribution in the QW. In both scenarios, the exchange-enhanced g-factor is suppressed at B_cr. The critical fields, activation energy, and optical g-factor obtained in the first scenario are very close to the measured ones.     

Observation of the quantum Hall effect in cleaved InAs surfaces

We have performed the in-plane magnetotransport measurements on the two-dimensional electron gas at the cleaved p-InAs (1 1 0) surface by deposition of Ag. The surface electron density N_s is determined from the Hall coefficient at . The coverage dependence of N_s is well explained by the assumption that each adsorbed Ag atom denotes one electron into InAs until the surface Fermi level reaches the adsorbate-induced donor level. The electron mobility μ is about and does not show a clear dependence on the coverage over . In the high-magnetic field regime of B>1/μ, Shubnikov–de Hass oscillations were observed. A beating pattern due to the strong spin–orbit interaction appears for high N_s. For lower N_s of , an apparent quantum Hall plateau for ν=4 and vanishing of the longitudinal resistivity were observed around .     

Electron spin resonance of the two-dimensional metallic state and the quantum Hall state in a Si/SiGe quantum well

We report electrically detected electron spin resonance (ESR) measurements of a high mobility two-dimensional (2D) electron system formed in a Si/SiGe quantum well, with millimeter wave in a high magnetic field . The negative ESR signal observed under an in-plane magnetic field gives direct evidence that the spin polarization leads to a resistance increase in the 2D metallic state. Suppression of spin decoherence was observed in the quantum Hall state at the Landau level filling factor ν=2. Strength of the nuclear magnetic field in the resonance is evaluated to be less than , much smaller than that reported for GaAs/AlGaAs heterostructures.     

Gate-controlled de Haas–van Alphen effect in an interacting two-dimensional electron system

We have measured the de Haas–van Alphen (dHvA) oscillations of a gated two-dimensional electron system formed in a modulation-doped AlGaAs/GaAs heterojunction by means of a novel and highly sensitive cantilever magnetometer. We achieve a sensitivity of at a magnetic field by detecting the deflection of the cantilever using a fiber optic interferometer. The dHvA oscillation at ν=1 yields a thermodynamic energy gap that scales linearly with the applied magnetic field for . The slope corresponds to an exchange enhanced g factor g^*=3.5±0.3 originating from electron–electron interaction in the spin-polarized state of the 2DES.     

Magnetostructural phase transitions of DyFe4Ge2: Part II Neutron diffraction

We present the temperature magnetic phase diagram of the compound DyFe₄Ge₂ determined from neutron diffraction data for the entire magnetically ordered regime. DyFe₄Ge₂ undergoes at a simultaneous structural and magnetic transition of second order (or weakly first order) followed by two subsequent isostructural first-order magnetic transitions at and T_ic1=28K:

The re-entrant lock-in magnetic phase is stable in the high-temperature range T_ic2–T_N and in the low-temperature range 1.5 K–T_ic1 while the incommensurately modulated magnetic phase is sandwiched in the intermediate range T_ic1–T_ic2 between the two commensurate phases. The wave vector q₂ has a temperature-dependent length with a minimum in the middle of the incommensurate range and corresponds to a multiaxial amplitude modulated phase. Symmetry analysis leads for both propagation vectors in Cmmm to a twofold and fourfold splitting of the tetragonal Dy 2b site and the Fe 8i sites, respectively. The low temperature and the phases correspond to 3D canted magnetic structures described by the irreducible representations (Irreps) Γ₂+Γ₃ while the high-temperature q₁ phase to 2D canted magnetic structures described by a single Irrep Γ₂. The T_ic2 transition is connected with reorientations of both Fe and Dy moments.     

Stability of soliton lattice phase in the bilayer quantum Hall state under tilted magnetic fields

The bilayer quantum Hall (QH) state at the filling factor ν=1 shows various fascinating quantum phenomena due to the layer degree of freedom called ‘pseudospin’. We report an experimental evidence of the soliton lattice (SL) phase, which is a domain structure of pseudospin, by the appearance of a local maximum of magnetoresistance near the ν=1 QH state. We investigate the stability of the SL phase by changing B and the total electron density n_T. Detailed magnetotransport measurements under tilted magnetic fields were carried out to obtain a B–n_T plane phase diagram containing the C, IC and SL phases. We found the SL phase is only stable at low n_T region. Namely, the C–SL–IC phase transition occurs only at low n_T region as B increases. On the contrary, the C–IC phase transition directly occurs without passing through the SL phase at high n_T region.     

Anisotropic magnetotransport near the quantum Hall state

We report experimental results on an anisotropic magnetotransport of a bilayer electron system at the Landau level filling factor under tilted magnetic fields. We find that the magnetoresistance changes when the direction of applied in-plane field B is changed with respect to the direction of the current while keeping the strength of B fixed. This anisotropy only appears at the ground state where interlayer electron tunneling is permitted. Therefore, this phenomenon indicates that bilayer systems at with interlayer tunneling inherently have a dissipation mechanism related to the direction of the in-plane field.     

Tree-level contributions to the rare decays , , and in the Standard Model

The tree-level contributions to the rare decays , , and are analyzed and compared to those occurring in , , and . It is shown that these purely long-distance contributions, arising from the exchange of a charged lepton, can be significant in B⁺ decays for an intermediate τ, potentially blurring the distinction between the modes used to extract B⁺→τ⁺ν_τ and those used to probe the genuine short-distance and FCNC transitions. Numerically, the tree-level contributions are found to account for 98%, 12% and 14% of the total , , and rates, respectively.     

Electric field controlled g-factor in parabolic well determined by transport measurements

The Shubnikov de Haas oscillations in parabolic well are studied in the tilted magnetic field. The electric field displaces the electron wave function along Z-axis and leads to the strong variation of the average bare g-factor in such system. From the measurements of the filling factor ν_c at which the spin gap collapse occurs, we deduce the total Zeeman energy, which consists of the bare Zeeman energy and exchange-correlation term. By investigating of the variation of ν_c in tilted field we reliably extract the bare g-factor as a function of the gate voltage.     

Anomalous quantum Hall effect induced by nearby quantum dots

Transport measurements in high magnetic fields have been performed on two-dimensional electron system (2DES) separated by a thin barrier layer from a layer of InAs self-assembled quantum dots (QDs). Clear feature of quantum Hall effect was observed in spite of presence of QDs nearby 2DES. However, both magnetoresistance, ρ_xx, and Hall resistance, ρ_xy, are suppressed significantly only in the magnetic field range of filling factor in 2DES ν<1 and voltage applied on a front gate . The results indicate that the electron state in QDs induces spin-flip process in 2DES.     

Spin-Hall effect of collimated electrons in zinc-blende semiconductors

We describe an intrinsic spin-Hall effect (SHE) in n-type bulk zinc-blende semiconductors with a topological origin. When a collimated flux of electrons is injected into a zinc-blende semiconductor with Dresselhaus spin–orbit interaction, a nontrivial gauge structure appears in the momentum space of the electrons. The Berry curvature of this gauge field and the corresponding Lorentz force in -space results in a finite SHE. The value of the spin-Hall current is found to be highly dependent on the degree of electron collimation, which may be varied by means of gate electrodes. Therefore, the system may potentially be useful as an electronically controllable source of pure spin-current for spintronic applications.     

Surface phase diagram and temperature induced phase transitions of Sn/Cu(1 0 0)

Room temperature deposition of Sn on Cu(1 0 0) gives rise to a rich variety of surface reconstructions in the submonolayer coverage range. In this work, we report a detailed investigation on the phases appearing and their temperature stability range by using low-energy electron diffraction and surface X-ray diffraction. Previously reported reconstructions in the submonolayer range are p(2 × 2) (for 0.2 ML), p(2 × 6) (for 0.33 ML), ()R45° (for 0.5 ML), and c(4 × 4) (for 0.65 ML). We find a new phase with a structure for a coverage of 0.45 ML. Furthermore, we analyze the temperature stability of all phases. We find that two phases exhibit a temperature induced reversible phase transition: the ()R45° phase becomes ()R45° phase above 360 K, and the new phase becomes p(2 × 2) also above 360 K. The origin of these two-phase transitions is discussed.     

Relationship between oxide-ion conductivity and dielectric relaxation in the Ln2Zr2O7 system having pyrochore-type compositions (Ln=Yb, Y, Gd, Eu, Sm, Nd, La)

Ln₂Zr₂O₇ (Ln=Yb, Y, Gd, Eu, Sm, Nd, La) system changed from fluorite (F)-type to pyrochlore (P)-type phases when the ionic radius ratios, r(Ln³⁺)/r(Zr⁴⁺), were larger than 1.26. The oxide-ion conductivity showed sharp maximum at the vicinity of the phase boundary between the F- and P-type phases. The frequency dependence of dielectric constant () and dielectric loss factor () were successfully explained by the superimposition of Debye-type polarization due to dopant-vacancy associate and electrode-electrolyte interfacial polarization by the numerical calculation. The peak of dielectric loss tangent (tan δ) was ascribed to the dopant-vacancy associate. The ε_r(0) and dielectric constant of the associate (ε_r0) showed also the maximum values at the vicinity of the phase boundary between the F- and P-type phases.     

Existence of different intermediate Hamiltonians in type A -fold supersymmetry

Type A -fold supercharge admits a one-parameter family of factorizations into product of first-order linear differential operators due to an underlying symmetry. As a consequence, a type A -fold supersymmetric system can have different intermediate Hamiltonians corresponding to different factorizations. We derive the necessary and sufficient conditions for the latter system to possess intermediate Hamiltonians for the case. We then show that whenever it has (at least) one intermediate Hamiltonian, it can admit second-order parasupersymmetry and a generalized 2-fold superalgebra. As an illustration, we construct a set of generalized Pöschl–Teller potentials of this kind.     

High-resolution electron microscopy of microstructure of MnF2 subjected to shock compression at 4.4 GPa

Microstructure of MnF₂ subjected to by shock compression at 4.4 GPa was examined using transmission electron microscopy (TEM). Lamellar structure consisting of twin-related domains of rutile-structure and intergrowth of α- PbO₂-type phase is observed in the electron diffraction pattern and TEM images. The crystallographic relationship between rutile and α- PbO₂-type phases can be expressed as and .     

Intensity transformation of vector Bessel beams using a multilayer system

We theoretically investigate the generation of vector Bessel beams of the order m using a phase shifted superposition of TE and TM electromagnetic Bessel beams. Such Bessel beams are characterized by the intensity profile described by the superposition of squared Bessel functions of the orders (m-1) and (m+1). We derive the conditions for creating the special distributions of the intensity, which are determined by only one Bessel function, or . We offer the approach of intensity transformation based on the Bessel beam transmission through a multilayer system. Finally, we reveal the perfect intensity transformation transferring the whole energy from - to -profile of intensity distribution.     

Charm diffusion in a pion gas implementing unitarity, chiral and heavy quark symmetries

We compute the charm drag and diffusion coefficients in a hot pion gas, such as is formed in a heavy ion collision after the system cools sufficiently to transit into the hadron phase. We fully exploit heavy quark effective theory (with both D and D^∗ mesons as elementary degrees of freedom during the collision) and chiral perturbation theory, and employ standard unitarization to reach higher temperatures. We find that a certain friction and shear diffusion coefficients are almost p²-independent at a fixed temperature which simplifies phenomenological analysis.At the higher end of reliability of our calculation, , we report a charm relaxation length , in agreement with the model estimate of He, Fries and Rapp.The momentum of a 1 GeV charm quark decreases about 50 MeV per fermi when crossing the hadron phase.