Critical behaviour of magnetic thin film with Heisenberg spin-S model

The magnetic properties of a ferromagnetic thin film of face centered cubic (FCC) lattice with Heisenberg spin-S are examined using the high-temperature series expansions technique extrapolated with Padé approximations method. The critical reduced temperature of the system τ_c is studied as function of thickness of the film and the exchange interactions in the bulk, and within the surfaces J_b, J_s and J_⊥ respectively. A critical value of surface exchange interaction above which surface magnetism appears is obtained. The dependence of the reduced critical temperature on the film thickness L has been investigated.     

The effective activation energy Ueff(T,B,J) in Hg-1223 single phase superconductors

We review the methods of calculating the effective activation energy U_eff(T,B,J) for both transport measurements and magnetic decay, together with some theoretical models. Then, we apply these methods to our Hg-1223 single-phase superconductor to obtain the activation energy. Transport results give that the magnetic field and temperature dependence of the U_eff can be well described as U₀B^−α(1−T/T_c)^m. Magnetic relaxation shows that the current density dependence of U(J) can be scaled onto a single curve, which can be considered as the activation energy at some temperature T₀. The pinning mechanism in the measured temperature range does not change, and the activation energy depends separately on the three variables: T, B, and J, are responsible for the magnetic decay data scaling onto a single curve at various temperatures. As temperatures close to zero and near T_c, thermally assisted flux motion model is no longer valid since other processes dominate.     

Fabrication of FeSe1−x superconducting films with bulk properties

We have fabricated high-quality FeSe_1−x superconducting films with a bulk T_c of 11–12 K on different substrates, Al₂O₃(0 0 0 1), SrTiO₃(1 0 0), MgO(1 0 0), and LaAlO₃(1 0 0), by using a pulsed laser deposition technique. All the films were grown at a high substrate temperature of 610 °C, and were preferentially oriented along the (1 0 1) direction, the latter being to be a key to fabricating of FeSe_1−x superconducting thin films with high T_c. According to the energy dispersive spectroscopy data, the Fe:Se composition ratio was 1:0.90 ± 0.02. The FeSe_1−x film grown on a SrTiO₃ substrate showed the best quality with a high upper critical magnetic field [H_c2(0)] of 56 T.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

Magnetization reversal in Gd0.67Ca0.33MnO3: Comparison between epitaxial thin films and bulk

Rare-earth-based manganites ABO₃ may present interesting properties when the lanthanide (A-site) and/or the manganese (B-site) are partially substituted by divalent elements. Heavy lanthanides are particularly appealing because of the expected interplay between the intrinsic magnetic properties of the rare-earth element (Ln) and those of the ferromagnetic manganese sublattice. As such, a spin reorientation has been observed during magnetization-versus-temperature cycles due to a negative exchange interaction between Mn and Ln. We present herein high-quality epitaxial thin films (∼200 nm thick) of Gd_0.67Ca_0.33MnO₃ deposited onto (1 0 0) SrTiO₃ substrates by pulsed-laser deposition. Enhanced properties were observed in comparison with bulk samples. The magnetic transition temperature T_c of the as-grown films is much higher than the corresponding bulk values. Most interesting, magnetization measurements performed under small applied fields, exhibit magnetization reversals below T_c, no matter whether the film is field-cooled (FC) or zero-field-cooled (ZFC). The reversal mechanism is discussed in terms of a negative exchange f-d interaction and magnetic anisotropy, this latter enhanced by strain effects induced by the lattice mismatch between the film and the substrate.     

I–V characteristics and critical currents in superconducting/ferromagnetic bilayers

Current–voltage (I–V) characteristics and critical current density, J_c, for the onset of vortex motion were measured at different magnetic fields, H, and temperatures, T, in a superconducting (S)/ferromagnetic (F) bilayer and in a single Nb film. We choose Nb as a superconductor and a weak ferromagnetic alloy, Pd_1−xNi_x with x = 16, as F. We found that J_c was smaller for the S/F bilayer with respect to the single Nb film. The result was related to the reduced value of the superconducting order parameter in the bilayer.     

Magnetostriction, Curie temperature and microstructure of Tb0.29(Dy1−xPrx)0.71Fe1.97 oriented alloys

The Tb_0.29(Dy_1−xPr_x)_0.71Fe_1.97 (x=0, 0.1, 0.2 and 0.3) alloys were prepared by directional solidification method. The orientation, magnetostriction λ, Curie temperature T_c and microstructure of alloys were characterized by XRD, standard resistant strain gauge technique, VSM and SEM-EDS. The results reveal that the alloys have a preferred orientation of 〈1 1 0〉 and 〈1 1 3〉 direction when x>0. With the increase in Pr content, the T_c of alloys decreases gradually and the non-cubic phase appears, resulting in the decline of λ dramatically, from 1935.2×10⁻⁶ for x=0 to 695.9×10⁻⁶ for x=0.3 at a compressive stress of 6 MPa and a magnetic field of H=240 kA m⁻¹.     

X-ray diffraction study of molybdenum diselenide to 35.9 GPa

In situ high-pressure angle dispersive synchrotron X-ray diffraction studies of molybdenum diselenide (MoSe₂) were carried out in a diamond-anvil cell to 35.9 GPa. No evidence of a phase transformation was observed in the pressure range. By fitting the pressure-volume data to the third-order Birch-Murnaghan equation of state, the bulk modulus, K_0T, was determined to be 45.7±0.3 GPa with its pressure derivative, K′_0T, being 11.6±0.1. It was found that the c-axis decreased linearly with pressure at a slope of −0.1593 when pressures were lower than 10 GPa. It showed different linear decrease with the slope of a −0.0236 at pressures higher than 10 GPa.     

Phase transitions and molecular motions in [Zn(NH3)4](BF4)2 studied by nuclear magnetic resonance, infrared and Raman spectroscopy

Middle infrared absorption, Raman scattering and proton magnetic resonance relaxation measurements were performed for [Zn(NH₃)₄](BF₄) in order to establish relationship between the observed phase transitions and reorientational motions of the NH₃ ligands and BF₄⁻ anions. The temperature dependence of spin-lattice relaxation time (T₁(¹H)) and of the full width at half maximum (FWHM) of the bands connected with ρ_r(NH₃), ν₂(BF₄) and ν₄(BF₄) modes in the infrared and in the Raman spectra have shown that in the high temperature phase of [Zn(NH₃)₄](BF₄)₂ all molecular groups perform the following stochastic reorientational motions: fast (τ_R≈10⁻¹² s) 120° flips of NH₃ ligands about three-fold axis, fast isotropic reorientation of BF₄⁻ anions and slow (τ_R≈10⁻⁴ s) isotropic reorientation (“tumbling”) of the whole [Zn(NH₃)₄]²⁺ cation. Mean values of the activation energies for uniaxial reorientation of NH₃ and isotropic reorientation of BF₄⁻ at phases I and II are ca. 3 kJ mol⁻¹ and ca. 5 kJ mol⁻¹, respectively. At phases III and IV the activation energies values for uniaxial reorientation of both NH₃ and of BF₄⁻ equal to ca. 7 kJ mol⁻¹. Nearly the same values of the activation energies, as well as of the reorientational correlation times, at phases III and IV well explain existence of the coupling between reorientational motions of NH₃ and BF₄⁻. Splitting some of the infrared bands at T_C2=117 K suggests reducing of crystal symmetry at this phase transition. Sudden narrowing of the bands connected with ν₂(BF₄), ν₄(BF₄) and ρ_r(NH₃) modes at T_C3=101 K implies slowing down (τ_R?10⁻¹⁰ s) of the fast uniaxial reorientational motions of the BF₄⁻ anions and NH₃ ligands at this phase transition.     

Magnetic-field-driven quantum critical behavior in graphite and bismuth

We study magnetotransport properties of graphite and rhombohedral bismuth samples and found that in both materials applied magnetic field induces the metal-insulator- (MIT) and reentrant insulator-metal-type (IMT) transformations. The corresponding transition boundaries plotted on the magnetic field-temperature (B − T) plane nearly coincide for these semimetals and can be best described by power laws T ∼ (B − B_c)^κ, where B_c is a critical field at T = 0 and κ = 0.45 ± 0.05. We show that insulator-metal-insulator (I-M-I) transformations take place in the Landau level quantization regime and illustrate how the IMT in quasi-3D graphite transforms into a cascade of I-M-I transitions, related to the quantum Hall effect in quasi-2D graphite samples. We discuss the possible coupling of superconducting and excitonic correlations with the observed phenomena, as well as signatures of quantum phase transitions associated with the M-I and I-M transformations.     

Structural and electrical transport properties of ZnxFe3−xO4 thin film deposited on Si (1 1 1) by pulsed-laser deposition

Polycrystalline thin films of Fe_3−xZn_xO₄ (x = 0.0, 0.01 and 0.02) were prepared by pulsed-laser deposition technique on Si (1 1 1) substrate. X-ray diffraction studies of parent as well as Zn doped magnetite show the spinel cubic structure of film with (1 1 1) orientation. The order–disorder transition temperature for Fe₃O₄ thin film with thickness of 150 nm are at 123 K (Si). Zn doping leads to enhancement of resistivity by Zn²⁺ substitution originates from a decrease of the carrier concentration, which do not show the Verwey transition. The Raman spectra for parent Fe₃O₄ on Si (1 1 1) substrate shows all Raman active modes for thin films at energies of T_2g¹, T_2g³, T_2g², and A_1g at 193, 304, 531 and 668 cm⁻¹. It is noticed that the frequency positions of the strongest A_1g mode are at 668.3 cm⁻¹, for all parent Fe₃O₄ thin film shifted at lower wave number as 663.7 for Fe_2.98Zn_0.02O₄ thin film on Si (1 1 1) substrate. The integral intensity at 668 cm⁻¹ increased significantly with decreasing doping concentration and highest for the parent sample, which is due to residual stress stored in the surface.     

Measurement of the coupling strength distribution in ferromagnetic (F)/antiferromagnetic (AF) exchange bias systems

We propose a method for determination of the distribution function P(j) of the coupling energy density j in polycrystalline textured ferromagnetic (F)/antiferromagnetic (AF) film systems. P(j) governs the entire film coupling J and the exchange bias field H_e and was not measurable until now. The method is verified by torquemetry in a high magnetic field and by reversing its rotation sense. The transition to a new magnetic steady state after rotation reversal is analyzed within a Stoner–Wohlfarth model including thermal relaxation. This transition is completed earlier for strongly coupled grains than for grains with smaller j, which is reflected in the torque curves. We determined P(j) for a sputtered NiFe(16 nm)/IrMn(0.8 nm) film at T=50 K in the hysteretic range of coupling energies and found that P strongly decreases for increasing j.     

Magnetization reversal in bulk and thin films of the ferrimagnetic ErCo0.50Mn0.50O3 perovskite

We present herein a comparison of the magnetic properties of bulk ceramics and thin films of the ferrimagnetic ErCo_0.50Mn_0.50O₃ compound. Epitaxial thin films were deposited onto (1 0 0) SrTiO₃ substrates by pulsed-laser ablation while bulk ceramics were prepared by solid state reaction. When cooling under low applied fields, a spin reversal is observed in both thin film and bulk due to the competition between two magnetic sublattices (Co/Mn and Er) coupled by a negative exchange interaction. Original features are observed in the M(H) loops for bulk materials: abrupt jumps at 4 T due to a reorientation of domains, while in the low field region, the increasing and decreasing branches of the magnetization intersect each other. In the thin film, the ordering temperature increased from 69 to 75 K, and the ZFC anomaly (AF transition) became sharper, compared to the bulk specimen. The oxygen content and the microstructure are crucial to observe the intersection of the magnetization branches.     

Non-planar spin texture driven dissipation in a ferromagnet-superconductor bilayer

We report the observation of a pronounced dip in the in-plane magnetic field (H_∥) dependence of the critical current density J_c(H) and a peak in resistance R(H) of a NbN-HoNi₅ bilayer at temperatures below the magnetic ordering temperature (T_Curie ≈ 3.5 K) of HoNi₅, which is lower than the onset temperature (≈9 K) of superconductivity in the NbN layer. The extrema in J_c(H) and R(H) appear at fields much below the upper critical field of NbN. We attribute these features to a coupling between localized out-of-plane moments present in the magnetic film and Pearl vortices of the superconducting layer. A spin re-orientation transition of the localized moments by H_∥ breaks this coupling, leading to the observed excess dissipation.     

Electron hopping mechanism in hematite (α-Fe2O3)

The frequency dependence of the real (?′) and imaginary (?″) parts of the dielectric constant of polycrystalline hematite (α-Fe₂O₃) has been investigated in the frequency range 0-100 kHz and the temperature range 190-350 K, in order to reveal experimentally the electron hopping mechanism that takes place during the Morin transition of spin-flip process. The dielectric behaviour is described well by the Debye-type relaxation (α-dispersion) in the temperature regions T<233 K and T>338 K. In the intermediate temperature range 233 K<T<338 K a charge carrier mechanism takes place (electron jump from the O²⁻ ion into one of the magnetic ions Fe³⁺) which gives rise to the low frequency conductivity and to the Ω-dispersion. The temperature dependence of relaxation time (τ) in the −ln τ vs 10³/T plot shows two linear regions. In the first, T<238 K, τ increases with increasing T implying a negative activation energy −0.01 eV, and in the second region T>318 K τ decreases as the temperature increases implying a positive activation energy 0.12 eV. The total reorganization energy (0.12-0.01) 0.11 eV is in agreement with the adiabatic activation energy 0.11 eV given by an ab initio model in the literature. The temperature dependence of the phase shift in the frequencies 1, 5, 10 kHz applied shows clearly an average Morin temperature T_Mo=284±1 K that is higher than the value of 263 K corresponding to a single crystal due to the size and shape of material grains.     

Investigation of the magnetic field angle dependence of resistance, irreversibility field, upper critical field and critical current density in DC sputtered Bi-2223 thin film

We measured resistivity and transport critical current density, J_c, as a function of DC magnetic field and the angle (?) between the surface of the film and the magnetic field on ex-situ annealed, c-axis oriented Bi-2223 thin films fabricated by DC sputtering method. Irreversibility field (μ₀H_irr) and upper critical field (μ₀H_c2) were determined from the resistivity versus the applied magnetic field graph. It is observed that critical temperature (T_c), μ₀H_irr,μ₀H_c2 and J_c of the films strongly depend on the direction and strength of the field. While T_c of the film without magnetic field is observed to be about 102 K, it is found to decrease to 90 K (85 K) for the applied field perpendicular (parallel) to c-axis of the film. Not only were μ₀H_irr(0) and μ₀H_c2(0) values determined from the μ₀H_irr and μ₀H_c2 versus temperature graphs, respectively, but also penetration depths and coherence lengths were interpreted. Anisotropy of the film was also discussed by means of the change of irreversibility as a function of angle. Moreover at 4.2 K, J_c was observed to be 3000 A/cm² at zero field; however, it was found to abruptly decrease to 1982 (1 1 2 0) A/cm² under low magnetic field at ?=0° (?=90°), which indicates that anisotropic J_c behavior of the film is intrinsic. Furthermore, we provided a theoretical analysis of the obtained results in the framework of intrinsic pinning theory of superconductors. Microstructural properties of the produced films were also reinvestigated by X-ray diffractometer (XRD) and scanning electron microscopy (SEM) measurements. XRD patterns indicate that the films are c-axis oriented based on the prominent (0 0 l) peaks. SEM images show needle-like grain structures dominate the surface morphology of the films.     

High pressure behaviour of KHSO4 studied by electrical impedance spectroscopy

Measurements of the electrical conductivity were performed in KHSO₄ at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (T_Tr) and of the melting (T_m), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of T_Tr and T_m are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO₄ into K₃H(SO₄)₂+H₂SO₄ (and probably into K₅H₃(SO₄)₄+H₂SO₄) affects the electrical conductivity of KHSO₄, with the typical values of the protonic electrical conductivity, c. 10⁻¹ S/cm at 2.5 GPa.     

Annealing induced microstructural evolution of electrodeposited electrochromic tungsten oxide films

A significant influence of microstructure on the electrochromic and electrochemical performance characteristics of tungsten oxide (WO₃) films potentiostatically electrodeposited from a peroxopolytungstic acid (PPTA) sol has been evaluated as a function of annealing temperature. Powerful probes like X-ray diffractometry (XRD), transmission electron microscopy (TEM), UV-vis spectrophotometry, multiple step chronoamperometry and cyclic voltammetry have been employed for the thin film characterization. The as-deposited and the film annealed at 60 °C are composed of nanosized grains with a dominant amorphous phase, as well as open structure which ensues from a nanoporous matrix. This ensures a greater number of electroactive sites and a higher reaction area thereby manifesting in electrochromic responses superior to that of the films annealed at higher temperatures. The films annealed at temperatures ≥250 °C are characterized by a prominent triclinic crystalline structure and a hexagonal phase co-exists at temperatures ≥400 °C. The deleterious effect on the electrochromic properties of the film with annealing is ascribed to the loss of porosity, densification and the increasing crystallinity and grain size. Amongst all films under investigation, the film annealed at 60 °C exhibits a high transmission modulation (ΔT ∼ 68%) and coloration efficiency (η ∼ 77.6 cm² C⁻¹) at λ = 632.8 nm, charge storage capacity (Q_ins ∼ 21 mC cm⁻²), diffusion coefficient (6.08 × 10⁻¹⁰ cm² s⁻¹), fast color-bleach kinetics (t_c ∼ 275 s and t_b ∼ 12.5 s) and good electrochemical activity, as well as reversibility for the lithium insertion-extraction process upon cycling. The remarkable potential, which the film annealed at 60 °C has, for practical “smart window” applications has been demonstrated.     

Effect of heating rates on microstructure and superconducting properties of pure MgB2

The influence of different heating rates, ranging from 5 to 30 K min⁻¹, on the microstructure and superconducting of the MgB₂ bulk was investigated. No obvious variation in the grain size was found for the samples heated from 5 K min⁻¹ to 20 K min⁻¹ except for the changes in morphologies. Moreover, the grain refinement was obtained under the heating rate of 30 K min⁻¹. The critical current density (J_c) suggested that the 5 K min⁻¹ sample had the best performance in high field. Here, the differential thermal analysis (DTA) was employed to analyze the kinetics of MgB₂ phase formation with the different heating rates. The results showed that the large amount of MgB₂ formed at low temperature, which lead to compact structures under the slow heating rate. The fast heating rate would promote the evaporation of Mg at high temperature, which was considered to generate the vacancy and impurities in the sample.