有机器件电流自旋极化放大性质研究

基于自旋扩散漂移方程,考虑到电场的影响及有机半导体中特殊的载流子电荷自旋关系, 对一个简单的T型结构有机自旋器件模型进行了理论研究,得出了此有机器件的电流自旋 极化放大率表达式.研究表明,器件中极化子比率、电场和电流密度都会影响器件的电流 自旋极化放大率,通过调节此有机器件的电场和极化子比率可以获得较大的电流自旋 极化放大率.     

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

Measurement of electron spin lifetime and optical orientation efficiency in germanium using electrical detection of radio frequency modulated spin polarization

We propose and demonstrate a technique for electrical detection of polarized spins in semiconductors in zero applied magnetic fields. Spin polarization is generated by optical injection using circularly polarized light which is modulated rapidly using an electro-optic cell. The modulated spin polarization generates a weak time-varying magnetic field which is detected by a sensitive radio-frequency coil. Using a calibrated pickup coil and amplification electronics, clear signals were obtained for bulk GaAs and Ge samples from which an optical spin orientation efficiency of 4.8% could be determined for Ge at 1342 nm excitation wavelength. In the presence of a small external magnetic field, the signal decayed according to the Hanle effect, from which a spin lifetime of 4.6±1.0 ns for electrons in bulk Ge at 127 K was extracted.     

ac-Driven double quantum dots as spin pumps and spin filters

We propose and analyze a new scheme of realizing both spin filtering and spin pumping by using ac-driven double quantum dots in the Coulomb blockade regime. By calculating the current through the system in the sequential tunneling regime, we demonstrate that the spin polarization of the current can be controlled by tuning the parameters (amplitude and frequency) of the ac field. We also discuss spin relaxation and decoherence effects in the pumped current.     

Thermoelectric response of spin polarization in Rashba spintronic systems

Motivated by the recent discovery of a strongly spin–orbit-coupled two-dimensional (2D) electron gas near the surface of Rashba semiconductors BiTeX (X= Cl, Br, I), we calculate the thermoelectric responses of spin polarization in a 2D Rashba model. By self-consistently determining the energyand band-dependent transport time, we present an exact solution of the linearized Boltzmann equation for elastic scattering. Using this solution, we find a non-Edelstein electric-field-induced spin polarization that is linear in the Fermi energy E_F when E_F lies below the band crossing point. The spin polarization efficiency, which is the electric-field-induced spin polarization divided by the driven electric current, increases for smaller E_F .We show that, as a function of E_F, the temperaturegradient-induced spin polarization increases continuously to a saturation value when EF decreases below the band crossing point. As the temperature tends to zero, the temperature-gradient-induced spin polarization vanishes.     

Non linear analysis of obliquely propagating spin electron acoustic wave in a partially spin polarized degenerate plasma

By employing the separated spin evolution quantum hydrodynamic model, non-linear evolution of obliquely propagating spin electron acoustic wave (SEAW) is presented. The solitary structures of SEAW is investigated through the Korteweg–de Vries (KdV) equation derived using reductive perturbation method. From the first order perturbations we derive the dispersion relation of SEAW and find that both the spin polarization and the propagation angle reduce the phase velocity while the electron streaming enhances it. Using small amplitude approximation, the solitary structure of SEAW is analyzed and the effects of spin polarization, propagation angle and electron streaming on the SEA soliton are studied. Our numerical results demonstrate that the spin polarization and the propagation angle play a balancing act on the soliton structures. The possible applications of our investigation to the astrophysical environments like white dwarfs is also discussed.     

Detection and manipulation of statistical polarization in small spin ensembles

We report the detection of the square root of N statistical polarization in a small ensemble of electron spin centers in SiO2 by magnetic resonance force microscopy. A novel detection technique was employed that captures the statistical polarization and cycles it between states that are either locked or antilocked to the effective field in the rotating frame. Using field gradients as high as 5 G/nm, we achieved a detection sensitivity equivalent to roughly two electron spins, and observed ultralong spin-lock lifetimes, as long as 20 s. Given a sufficient signal-to-noise ratio, this scheme should be extendable to single electron spin detection.     

Effect of electric-field on spin transport and spin current in an organic semiconductor system

We use the two-component drift-diffusion model to study the spin density polarization in an organic semiconductor system under an external electric-field. The spin-dependent electrical-conductivity, the drift spin current and the diffusion spin current in the organic semiconductor are self-consistently derived. It is found that the spin current could be strongly influenced by the spin-dependent electrical-conductivity. When the spin-dependent conductivity varies from 0 to 0.5%, the spin current presents a very pronounced change almost three orders in magnitude. The electric-field could effectively enhance the spin-dependent electrical-conductivity and the spin current. Furthermore, the spin-dependent electrical-conductivity is position sensitive, but its position sensitivity goes down while electric-field is larger than about 1 mV/μm.     

Nonlinear 2D spin susceptibility in a finite magnetic field: spin-polarization dependence

By theoretically calculating the interacting spin susceptibility of a two-dimensional electron system in the presence of finite spin polarization, we show that the extensively employed technique of measuring the 2D spin susceptibility by linear extrapolation to a zero field from the finite-field experimental data is theoretically unjustified due to the strong nonlinear magnetic field dependence of the interacting susceptibility. Our work compellingly establishes that much of the prevailing interpretation of the 2D susceptibility measurements is incorrect, and, in general, the 2D interacting susceptibility cannot be extracted from the critical magnetic field for full spin polarization, as is routinely done experimentally.     

Control of spin in quantum dots with non-Fermi-liquid correlations

Spin effects in the transport properties of a quantum dot with spin-charge separation are investigated. It is found that the nonlinear transport spectra are dominated by spin dynamics. Strong spin polarization effects are observed in a magnetic field. They can be controlled by varying gate and bias voltages. Complete polarization is stable against interactions. When polarization is not complete it is power law enhanced by non-Fermi-liquid effects.     

Temperature dependence of spin injection efficiency in an epitaxially grown Fe/GaAs hybrid structure

The electrical spin injection from Fe into an n-doped GaAs channel through Schottky-tunnel-barrier is observed from 1.8 K to room temperature. The magnitude of local spin valve signal (ΔR/R₀) decreases as the temperature increases. In each temperature, we calculated the injected polarization (η) considering the spin drift effect induced by the electric field. The interfacial polarizations of 19.3% and 12.6% are acquired for Fe/GaAs junction at T=1.8 and 300 K, respectively. The temperature dependence of spin injection efficiency is matched with interface resistance variation. As the temperature increases, Schottky-tunnel-barrier property is diminished so that the spin injection efficiency would be reduced.     

Effects of electric field and magnetic induction on spin injection into organic semiconductors

Spin-polarized injection and transport into ferromagnetic/organic semiconductor structure are studied theoretically in the presence of the external electric field and magnetic induction. Based on the spin-drift-diffusion theory and Ohm's law, we obtain the charge current polarization, which takes into account the special carriers of organic semiconductors. From the calculation, it is found that the current spin polarization is enhanced by several orders of magnitude by tuning the magnetic induction and electric fields. To get an apparent current spin polarization, the effects of spin-depended interfacial resistances and the special carriers in the organic semiconductor, which are polarons and bipolarons, are also discussed.     

Electronic spin drift in graphene field-effect transistors

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n approximately 3.5 x 10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.     

Controllability of spin 1 systems and realization of ternary SWAP gate in two spin 1 systems coupled with Ising interaction

In this paper,we investigate the controllability of spin 1 systems and the realization of ternary gates.Using dipole and quadrupole operators as the orthogonal basis of su(3) algebra,we discuss the controllability of one spin 1 systems and offer the concept of a complete set of control operators first.Then we present the controllability of two spin 1 systems coupled with Ising interaction and the transforming relations of the drift process of the system.Finally the specific realization of the ternary SWAP gate in these systems is discussed.It takes 9 drift processes and 25 basic control processes.     

Spin-dependent quantum transport through an Aharonov--Bohm structure spin splitter

Using the tight-binding model approximation, this paper investigates theoretically spin-dependent quantum transport through an Aharonov-Bohm （AB） interferometer. An external magnetic field is applied to produce the spinpolarization and spin current. The AB interferometer, acting as a spin splitter, separates the opposite spin polarization current. By adjusting the energy and the direction of the magnetic field, large spin-polarized current can be obtained.     

Time-correlated soliton tunneling in charge and spin density waves

We consider a model in which an electric field induces quantum nucleation of kink-antikink pairs in a pinned charge or spin density wave. Pair nucleation events, prevented by Coulomb blockade below a pair creation threshold, become correlated in time above threshold. The model provides a natural explanation for the observed (i) small density wave polarization below threshold in NbSe (3), (ii) narrow band noise, (iii) coherent oscillations, and (iv) mode-locking at high drift frequencies.     

Current-induced polarization and the spin Hall effect at room temperature

Electrically induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically induced internal magnetic field, current-induced in-plane spin polarization is observed with characteristic spin lifetimes that decrease with doping density. The spin Hall effect is also observed, indicated by an electrically induced out-of-plane spin polarization with opposite sign for spins accumulating on opposite edges of the sample. The spin Hall conductivity is estimated as 3+/-1.5 Omega(-1) m(-1)/|e| at 20 K, which is consistent with the extrinsic mechanism. Both the current-induced spin polarization and the spin Hall effect are observed at temperatures from 10 to 295 K.     

Rapid and robust spin state amplification

Electron and nuclear spins have been employed in many of the early demonstrations of quantum technology. However, applications in real world quantum technology are limited by the difficulty of measuring single spins. Here we show that it is possible to rapidly and robustly amplify a spin state using a lattice of ancillary spins. The model we employ corresponds to an extremely simple experimental system: a homogenous Ising-coupled spin lattice in one, two, or three dimensions, driven by a continuous microwave field. We establish that the process can operate at finite temperature (imperfect initial polarization) and under the effects of various forms of decoherence.     

磁性硅烯超晶格中电场调制的谷极化和自旋极化

研究了基于硅烯的静电势超晶格、铁磁超晶格、反铁磁超晶格中谷极化、自旋极化以及赝自旋极化的输运性质,分析了铁磁交换场、反铁磁交换场以及化学势对输运性质的影响,讨论了电场对谷极化、自旋极化以及赝自旋极化的调控作用.结果表明:当3种超晶格的晶格数达到10以上时,在硅烯超晶格中很容易实现100%的谷极化、自旋极化和赝自旋极化,而且通过调节超晶格上的外加电场可以使极化方向发生翻转,从而在硅烯超晶格中实现外电场对谷自由度、自旋自由度以及赝自旋自由度的操控.