Characterization of the interface dipole at the paraphenylenediamine-nickel interface: a joint theoretical and experimental study

In organic-based (opto)electronic devices, charge injection into conjugated materials is governed to a large extent by the metal-organic interface dipole. Controlling the injection of charges requires a better understanding of the fundamental origin of the interface dipole. In this context, photoelectron spectroscopies and density functional theory calculations are used to investigate the interaction between para-phenylenediamine (PPDA), an electron donor, and a polycrystalline nickel surface. The interface dipole formed upon chemisorption of one PPDA monolayer strongly modifies the work function of the nickel surface from 5.10 to 3.55 eV. The work function decrease of 1.55 eV is explained by the electron-donor character of PPDA and the modification of the electronic density at the metal surface. PPDA monolayers are composed of tilted molecules interacting via the nitrogen lone-pair and PPDA molecules chemisorbed parallel to the surface via their pi-electron density. Annealing the monolayer leads to dehydrogenation of PPDA activated by the nickel surface, as found for other amines.     

Surface state engineering of molecule-molecule interactions

Engineering the electronic structure of organics through interface manipulation, particularly the interface dipole and the barriers to charge carrier injection, is of essential importance to improve organic devices. This requires the meticulous fabrication of desired organic structures by precisely controlling the interactions between molecules. The well-known principles of organic coordination chemistry cannot be applied without proper consideration of extra molecular hybridization, charge transfer and dipole formation at the interfaces. Here we identify the interplay between energy level alignment, charge transfer, surface dipole and charge pillow effect and show how these effects collectively determine the net force between adsorbed porphyrin 2H-TPP on Cu(111). We show that the forces between supported porphyrins can be altered by controlling the amount of charge transferred across the interface accurately through the relative alignment of molecular electronic levels with respect to the Shockley surface state of the metal substrate, and hence govern the self-assembly of the molecules.     

Molecularly controlled metal-semiconductor junctions on silicon surface: a dipole effect

Silicon surface was chemically modified by covalent attachment of homologous organic molecules having different dipole moments. Surface photovoltage measurements clearly confirm that organic molecules have a profound effect on surface band bending of semiconductor. Metal-molecules--silicon junctions were constituted for molecules belonging to ethynylbenzene series using soft mercury contact. These junctions show a systematic change in the electrical charge transport with dipole moment of molecules. Parameters such as ideality factor, barrier height, and density of interface states of various junctions are estimated to understand the role of organic molecules. These studies offer the prospect to develop molecular electronics, which may find potential applications in solar cells and chemical and biological sensors.     

Ab initio theoretical study of substituted dicarboxylic acids adsorbed on GaAs surfaces: correlation between microscopic properties and observed electrical behavior

Five substituted tartaric acid derivatives are studied using density functional theory, both isolated and adsorbed onto an oxidized GaAs cluster, to model molecular layers on semiconductor surfaces. The structures, energies, and electronic properties are computed to clarify the interactions responsible for the electric behavior of the modified surfaces, used in semiconductor/metal junction devices. The chemical structure of the molecule/GaAs adducts is optimized ab initio and discussed for the first time. A strong binding scheme is found, providing useful insights about the microscopic structure of the molecular layer. A widely used model based on molecular dipole layers is discussed and verified, by computing the dipole moment for the isolated systems and estimating the charge separation in the adducts; moreover the molecular orbitals energies are analyzed and correlated to the experimental measures of the modified surface electron affinity.     

Ultrathin monolayer of rubrene on Au(111) induced by charge transfer

An ultrathin self‐assembly monolayer of rubrene on Au(111) has been fabricated and studied by scanning tunneling microscopy. The apparent thickness of such monolayer is 0.08 nm and close to the radius of a carbon atom. Moreover, the rubrene molecules within the second layer prefer adsorbing on to the positions corresponding to the herringbone structure underneath the Au(111)–() while the Au surface is fully covered by a monolayer of rubrene. With the assistant with theoretical simulations, we reveal that small apparent height of such monolayer is due to the coupling between the molecular orbitals and the gold surface. About 0.237 electron per rubrene molecule is transferred to the surface, and as a consequence, an interfacial dipole is formed on the rubrene/Au interface. The formation of such interfacial dipole induced by charge transfer from molecules to surfaces is believed to be applied in organic molecules adsorbed on metal surfaces. Copyright © 2011 John Wiley & Sons, Ltd.     

Photoresponsive organic field-effect transistors involving photochromic molecules

In recent years, organic field-effect transistors (OFETs) with high performance and novel multifunctionalities have attracted considerable attention. Meanwhile, featured with reversible photoisomerization and the corresponding variation in color, chemical/physical properties, photochromic molecules have been applied in sensors, photo-switches and memories. Incorporation of photochromic molecules to blend in the device functional layers or to modify the interfaces of OFETs is common way to build photo-transistors. In this review, we focus on the recent advantages on the study of photoresponsive transistors involving one of three typical photochromic compounds spiropyran, diarylethene and azobenzene. Three main strategies are demonstrated in detail. Firstly, photochromic molecules are doped in active layers or combined with semiconductor structure thus forming photoreversible active layers. Secondly, the modification of dielectric layer/active layer interface is mainly carried out by bilayer dielectric. Thirdly, the photo-isomerization of self-assembled monolayer (SAM) on the electrode/active layer interface can reversibly modulate the work functions and charge injection barrier, result in bifunctional OFETs. All in all, the combination of photochromic molecules and OFETs is an efficient way for the fabrication of organic photoelectric devices. Photoresponsive transistors consisted of photochromic molecules are potential candidate for real applications in the future.     

Atomistic mechanism of charge separation upon photoexcitation at the dye-semiconductor interface for photovoltaic applications

Charge separation in excited states upon visible light absorption is a central process in photovoltaic solar cell applications. Employing state-of-the-art first principles calculations based on time-dependent density functional theory (TDDFT), we simulate electron-hole dynamics in real time and illustrate the microscopic mechanism of charge separation at the interface between organic dye molecules and oxide semiconductor surfaces in dye-sensitized solar cells. We found that electron-hole separation proceeds non-adiabatically on an ultrafast timescale <100 fs at an anthocyanin/TiO(2) interface, and it is strongly mediated by the vibrations of interface Ti-O bonds, which anchor the dye onto the TiO(2) surface. The obtained absorption spectrum and electron injection timescale agree with experimental measurements.     

Molecular controlled nano-devices

In this perspective we present several examples of the ability to control electronic and magnetic properties of nano-devices by adsorbing on their surfaces organized self-assembled monolayers (SAM) of organic molecules. The work presented focuses on research in which we were involved and is aimed at demonstrating the ability to control physical properties of metal and semiconductor films by complementing them with the properties of a SAM. The organization of molecules on a surface produces a pseudo two-dimensional dipole layer, owing to the dipolar property of each of the molecules. The field confined in the layer could be enormous, however the molecules are either depolarized or charge is transferred between the substrate and the layer so as to reduce the energy of the dipole layer. This charge transfer process can be exploited for the use of hybrid-organic-inorganic devices as sensors, as wavelength specific light detectors, or for varying the critical temperature in semiconductor ferromagnets. The concept presented here, for combining electronic properties of organic molecules with those of the inorganic substrate, is another venue toward "molecular controlled electronics".     

Silicon/molecule interfacial electronic modifications

Electronic structures at the silicon/molecule interface were studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, inverse photoemission spectroscopy, and Kelvin probe techniques. The heterojunctions were fabricated by direct covalent grafting of a series of molecules (-C6H4-X, with X = NMe2, NH2, NO2, and Mo6 oxide cluster) onto the surface of four types of silicon substrates (both n- and p-type with different dopant densities). The electronic structures at the interfaces were thus systematically tuned in accordance with the electron-donating ability, redox capability, and/or dipole moment of the grafted molecules. The work function of each grafted surface is determined by a combination of the surface band bending and electron affinity. The surface band bending is dependent on the charge transfer between the silicon substrate and the grafted molecules, whereas electron affinity is dependent on the dipole moment of the grafted molecules. The contribution of each to the work function can be separated by a combination of the aforementioned analytical techniques. In addition, because of the relatively low molecular coverage on the surface, the contribution from the unreacted H-terminated surface to the work function was considered. The charge-transfer barrier of silicon substrates attached to different molecules exhibits a trend analogous to surface band bending effects, whereas the surface potential step exhibits properties analogous to electron affinity effects. These results provide a foundation for the utilization of organic molecule surface grafting as a means to tune the electronic properties of semiconductors and, consequently, to achieve controllable modulation of electronic characteristics in small semiconductor devices at future technology nodes.     

Controlling semiconductor/metal junction barriers by incomplete, nonideal molecular monolayers

We study how partial monolayers of molecular dipoles at semiconductor/metal interfaces can affect electrical transport across these interfaces, using a series of molecules with systematically varying dipole moment, adsorbed on n-GaAs, prior to Au or Pd metal contact deposition, by indirect evaporation or as "ready-made" pads. From analyses of the molecularly modified surfaces, we find that molecular coverage is poorer on low- than on high-doped n-GaAs. Electrical charge transport across the resulting interfaces was studied by current-voltage-temperature, internal photoemission, and capacitance-voltage measurements. The data were analyzed and compared with numerical simulations of interfaces that present inhomogeneous barriers for electron transport across them. For high-doped GaAs, we confirm that only the former, molecular dipole-dependent barrier is found. Although no clear molecular effects appear to exist with low-doped n-GaAs, those data are well explained by two coexisting barriers for electron transport, one with clear systematic dependence on molecular dipole (molecule-controlled regions) and a constant one (molecule-free regions, pinholes). This explains why directly observable molecular control over the barrier height is found with high-doped GaAs: there, the monolayer pinholes are small enough for their electronic effect not to be felt (they are "pinched off"). We conclude that molecules can control and tailor electronic devices need not form high-quality monolayers, bind chemically to both electrodes, or form multilayers to achieve complete surface coverage. Furthermore, the problem of stability during electron transport is significantly alleviated with molecular control via partial molecule coverage, as most current flows now between, rather than via, the molecules.     

Dipole driven bonding schemes of quinonoid zwitterions on surfaces

The permanent dipole of quinonoid zwitterions changes significantly when the molecules adsorb on Ag(111) and Cu(111) surfaces. STM reveals that sub-monolayers of adsorbed molecules can exhibit parallel dipole alignment on Ag(111), in strong contrast with the antiparallel ordering prevailing in the crystalline state and retrieved on Cu(111) surfaces, which minimizes the dipoles electrostatic interaction energy. DFT shows that the rearrangement of electron density upon adsorption is a result of donation from the molecular HOMO to the surface, and back donation to the LUMO with a concomitant charge transfer that effectively reduces the overall charge dipole.     

Energy level alignment at interfaces between 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butyl phenyl)-1, 2, 4-triazole (TAZ) and metals (Ca,Mg, Ag,and Au): experiment and theory

We have performed ultraviolet photoelectron spectroscopy measurements and density functional theory calculations to study the electronic structure at the interface between organic semiconductor (3-(4-biphenylyl)-4-phenyl-5-(4-tert-butyl phenyl)-1,2,4-triazole (TAZ)) and metals (Ca, Mg, Ag, and Au). The basic mechanism of interface states at organic–metal interfaces can be understood by controlling the injection of charge carriers at these interfaces. The position of highest occupied molecular orbital relative to the Fermi level and the magnitude of the interface dipole are measured for each organic–metal interface. For TAZ on Ca, Mg, and Ag, interface states are observed near the Fermi level. However, no interface state is observed for TAZ on Au. It is analyzed qualitatively that the interface state is formed due to interaction of TAZ lowest unoccupied molecular orbital composed of C2p and metal s levels. It is suggested that the interface state plays an important role in charge transport at the interface. The mechanism of formation of interface states and electrical properties are discussed.     

Adsorption-induced intramolecular dipole: correlating molecular conformation and interface electronic structure

The interfaces formed between pentacene (PEN) and perfluoropentacene (PFP) molecules and Cu(111) were studied using photoelectron spectroscopy, X-ray standing wave (XSW), and scanning tunneling microscopy measurements, in conjunction with theoretical modeling. The average carbon bonding distances for PEN and PFP differ strongly, that is, 2.34 A for PEN versus 2.98 A for PFP. An adsorption-induced nonplanar conformation of PFP is suggested by XSW (F atoms 0.1 A above the carbon plane), which causes an intramolecular dipole of approximately 0.5 D. These observations explain why the hole injection barriers at both molecule/metal interfaces are comparable (1.10 eV for PEN and 1.35 eV for PFP) whereas the molecular ionization energies differ significantly (5.00 eV for PEN and 5.85 eV for PFP). Our results show that the hypothesis of charge injection barrier tuning at organic/metal interfaces by adjusting the ionization energy of molecules is not always readily applicable.     

Energy level alignment at metal/organic semiconductor interfaces: "pillow" effect, induced density of interface states, and charge neutrality level

A unified model, embodying the "pillow" effect and the induced density of interface states (IDIS) model, is presented for describing the level alignment at a metal/organic interface. The pillow effect, which originates from the orthogonalization of the metal and organic wave functions, is calculated using a many-body linear combination of atomic orbitals Hamiltonian, whereby electron long-range interactions are obtained using an expansion in the metal/organic wave function overlap, while the electronic charge of both materials remains unchanged. This approach yields the pillow dipole and represents the first effect induced by the metal/organic interaction, resulting in a reduction of the metal work function. In a second step, we consider how charge is transferred between the metal and the organic material by means of the IDIS model: Charge transfer is determined by the relative position of the metal work function (corrected by the pillow effect) and the organic charge neutrality level, as well as by an interface parameter S, which measures how this potential difference is screened. In our approach, we show that the combined IDIS-pillow effects can be described in terms of the original IDIS alignment corrected by a screened pillow dipole. For the organic materials considered in this paper, we see that the IDIS dipole already represents most of the realignment induced at the metal/organic interface. We therefore conclude that the pillow effect yields minor corrections to the IDIS model.     

Polarization model for poorly-organized interfacial water: hydration forces between silica surfaces

The main goal of this paper is to review the theoretical models which can be used to describe the interactions between silica surfaces and to show that a model proposed earlier by the authors (the polarization model), which accounts concomitantly for double layer and hydration forces, can be adapted to explain recent experiments in this direction. When the water molecules near the interface were considered to have an ice-like structure, a strong coupling between the double layer and hydration forces (described by the correlation length between neighboring dipoles, lambda(m)) generates long range interactions, larger than the experimentally determined interactions between silica surfaces. Arguments are brought that a gel layer is likely to be formed on the surface of silica, which, by generating disorder in the interfacial water layers, can decrease strongly the value of lambda(m). Since the prediction of lambda(m) involves a choice for the microscopic structure of water, which is often unknown, the polarization model is also presented here as a phenomenological theory, in which lambda(m) is used as a fitting parameter. Two extreme cases are considered. In one of them, the water molecules near the interface are considered to have an ice-like structure, whereas in the other they are considered randomly distributed. In the first case, the dipole correlation length lambda(m)=14.9 Angstrom. In the second limiting case, lambda(m) can be of the order of 1 Angstrom. It is shown that, for lambda(m)=4 Angstrom, a more than qualitative agreement with the experiment could be obtained, for reasonable values of the parameters involved (e.g. surface dipole strength and density, dipole location, surface charge).     

有机二硫化物润滑添加剂抗磨极压性能的密度泛函理论研究

用量子化学的密度泛函理论计算了12种有机二硫化物和铁原子簇的分子轨道指数及其与铁原子簇的化学吸附作用能, 探讨了这种作用能与抗磨性能的关系; 运用轨道能量近似原则讨论了有机二硫化物与铁原子的作用方式; 以前线电子密度、超离域性指数和原子净电荷作为判据分析了12种有机二硫化物与铁原子间键合的强弱、反应性的大小等表征有机二硫化物与金属作用强弱的参数。结果表明: 有机二硫化物与铁接触时, 在较缓和条件下, SS键优先断裂与金属发生化学吸附形成配位键, 起到抗磨作用; 在高负荷下, 与金属发生常规条件下不能发生的化学反应, 即CS键断裂生成无机膜, 起到极压作用; 且随着碳链的增长, 有机二硫化物的抗磨性能愈来愈好, 但极压性能愈来愈差; 运用量子化学计算得到的预测结果与摩擦学试验结果具有良好的一致性, 可为同类极压添加剂化合物的分子设计提供较为可靠的参考依据和理论方法。     

水/醇溶共轭聚合物界面材料及其在光电器件中的应用

相对于传统的无机半导体器件,以有机半导体(特别是聚合物半导体)材料为基础的有机光电器件,可采用与传统印刷技术(例如喷墨打印、卷对卷印刷等)相结合的溶液加工方式制备低成本、大面积、柔性光电器件,因而成为广泛关注的焦点,并得到了快速发展.实现溶液加工的高效有机光电器件的一个关键问题是界面问题——如何避免溶液加工时有机层间的互溶以及如何实现可印刷稳定金属电极的高效电子注入等.水/醇溶性共轭聚合物的迅速发展为解决溶液加工多层有机光电器件所面临的界面问题提供了有效手段.研究发现,水/醇溶共轭聚合物不但可以有效避免溶液加工多层器件中的界面互溶,而且还可与高功函数的稳定金属发生界面偶极相互作用而增强其电子注入,从而解决了高功函数稳定金属电子注入的难题,为实现全溶液加工的高效印刷有机光电器件提供了可行的方案.本文介绍了近年来本课题组在水/醇溶共轭聚合物阴极界面材料及器件应用方面的研究进展,并对水/醇溶共轭聚合物阴极界面材料在聚合物发光二极管和聚合物太阳电池中的工作机理进行了探讨.     

How To Make Ohmic Contacts to Organic Semiconductors

The process of charge injection plays an important role in organic semiconductor devices. We review various experimental techniques that allow injection to be separated from other competing processes, and quantify the injection efficiency of a contact. We discuss the dependence of the injection efficiency on parameters such as the energy barrier at the interface, the carrier mobility of the organic semiconductor, its carrier density (doping level), the presence of mobile ions, and the sample geometry. Based on these findings, we outline guidelines for forming ohmic contacts and present examples of contact engineering in organic semiconductor devices.     

Heterolayer light-emitting diodes based on poly-phenylene vinylene

In order to enhance the quantum efficiency of poly-p-phenylene vinylene (PPV) light-emitting diodes (LEDs), we have fabricated metal/insulator/polymer (MIP) LEDs and heterolayer LEDs based on PPV and oxadiazole polymers. The current–voltage (I–V) characteristics and electroluminescence (EL) intensity of the MIP structures display a pronounced dependence of the insulator thickness and we detect an increase in the quantum efficiency of more than a factor of 30 at an AlO_x layer thickness of 3–6 nm. The device characteristics are qualitatively understood within inorganic metal insulator semi-conductor (MIS) theory and can be explained by a voltage-dependent barrier for minority carrier injection in connection with a hole-blocking barrier at the PPV/insulator interface. Our oxadiazole polymers used in the heterolayer polymeric devices are characterized by a high thermal stability and excellent film-forming properties. These materials act as efficient hole-blocking, electron transport and injection layers in PPV-based LEDs and we measure a significantly improved device performance with external quantum efficiencies of more than 0.5%. Temperature-dependent investigations point to a relatively balanced charge carrier injection and reveal the influence of space charge limited currents on the device performance at low temperature. © 1997 John Wiley & Sons, Ltd.