Variation of the electronic properties of zigzag boron nitride nanotubes by Al-doping: a DFT study

Boron nitride nanotubes (BNNTs) are semiconductors with a wide band gap. In comparison with carbon nanotubes (CNTs), BNNTs have higher chemical stability, excellent mechanical properties and higher thermal conductivity. In this paper, we study the effect of diameters and substituting B and N atoms of various zigzag BNNTs with Al, on structural and electronic properties of BNNTs in solid state using the density functional theory method. The results of calculations of density of states and band structure (band) showed that the band gap between the valence and conduction level increases as a result of the enhancement of tube diameter of BNNTs. Finally, the results showed that the electronic properties of the pristine BNNTs can be improved by doping Al atom in the zigzag configuration of tubes.     

Electronic properties of double-layer carbon nanotubes

The electronic spectra for double-wall zigzag and armchair nanotubes are found. The influence of nanotube curvatures on the electronic spectra is also calculated. Our finding that the outer shell is hole doped by the inner shell is in the difference between Fermi levels of individual shells which originate from the different hybridization of π orbital. The shift and rotation of the inner nanotube with respect to the outer nanotube are investigated. We found stable semimetal characteristics of the armchair DWNTs in regard of the shift and rotation of the inner nanotube. We predict the shift of k_F towards the bigger wave vectors with decreasing of the radius of the armchair nanotube.     

New class of non-carbon AlP nanotubes: Structure and electronic properties

A new class of non-carbon nanotubes based on Group III and Group V elements (aluminum and phosphorus, respectively) is considered. The equilibrium geometry, energy characteristics, and electronic structure of the AlP nanotubes were calculated using the density functional theory. These calculations demonstrated that the AlP nanotubes are energetically stable structures. It was found that a low strain energy (approximately 0.01–0.07 eV) is required for rolling a two-dimensional hexagonal AlP structure into a tube. The AlP nanotubes are found to be wide-band-gap semiconductors with a band gap of 2.05–3.73 eV with direct (for the zigzag type) or indirect (for the armchair type) transitions between the top of the valence band and the bottom of the conduction band. The band gap of these nanotubes increases with the tube diameter, approaching the band gap of a two-dimensional hexagonal AlP layer.     

On the existence and stability of double-walled armchair silicon carbide nanotubes

A systematic study of type 1 armchair double-walled SiC nanotubes (DWNTs) (n,n)@(m,m) (3≤n≤6;7≤m≤12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized using the hybrid functional B3LYP (Becke’s three-parameter exchange functional and the Lee-Yang-Parr correlation functional) and the all-electron 3-21G* basis set. The study indicates that the stabilities of the double-walled SiC nanotubes are of the same order as those of single-walled SiC nanotubes suggesting the possibilities of experimental synthesis of both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent single-walled nanotubes. The formation energy of the DWNTs is found to be maximum when the interlayer separation is about 3.5 Å. The DWNTs (n,n)@(n+4,n+4) are found to have large formation energies. In particular, (5,5)@(9,9) DWNT is the most stable tube in our study with a binding energy per atom of 5.07 eV, the largest formation energy of 12.39 eV, an interlayer separation of 3.58 Å and a “band gap” of 1.97 eV. All double-walled SiC nanotubes are found to be semiconductors, with the band gaps decreasing from single-walled nanotubes to double-walled nanotubes.     

Theoretical optoelectronic analysis of intermediate-band photovoltaic material based on ZnY1-xOx （Y = S,Se, Te） semiconductors by first-principles calculations

The structural, energetic, and electronic properties of lattice highly mismatched ZnY1-xOx （Y = S, Se, Te） ternary alloys with dilute O concentrations are calculated from first principles within the density functional theory. We demonstrate the formation of an isolated intermediate electronic band structure through diluted O-substitute in zinc-blende ZnY （Y = S, Se, Te） at octahedral sites in a semiconductor by the calculations of density of states （DOS）, leading to a significant absorption below the band gap of the parent semiconductor and an enhancement of the optical absorption in the whole energy range of the solar spectrum. It is found that the intermediate band states should be described as a result of the coupling between impurity O 2p states with the conduction band states. Moreover, the intermediate bands （IBs） in ZnTeO show high stabilization with the change of O concentration resulting from the largest electronegativity difference between O and Te compared with in the other ZnSO and ZnSeO.     

First-principles study of narrow single-walled GaN nanotubes

Structural and electronic properties of narrow single-walled GaN nanotubes with diameter from 0.30 to 0.55 nm are investigated using the density functional method with generalized-gradient approximation. The calculations of total energies predict that the most likely GaN nanotubes in our calculation are (2,2), (3,2) and (3,3) nanotubes. From a detailed analysis we find that these narrow single-walled GaN nanotubes are all semiconductors, of which the armchair and chiral tubes are indirect-band-gap semiconductors whereas the zigzag ones have a direct gap except for (4,0) tube. The indirect band gap of (4,0) tube can stem from band sequence change induced by curvature effect. Our results show that the π-π hybridization effect and the formation of benign buckling separations play a key role in the band sequence changes of (4,0) tube.     

A first-principles study of the size-dependent electronic properties of SiC nanotubes

We investigate the structural and electronic properties of SiC nanotubes(NTs) with hexagonal cross sections by a first-principles calculation using plane-wave ultra-soft pseudo-potential technology based on the density-functional theory.Our results reveal that surface-layer C and Si atoms relax significantly upon decreasing the tube-wall thickness because of surface-size and quantum-size effects.We also find that all relaxed SiC NTs stay stably on the nanoscale because of an admixture of sp2 and sp3 hybridization between C and Si atoms and a strong covalent,and that the band gap tends to decrease with increasing tube-wall thickness.Our calculations further indicate that both C and Si atoms on the inner and outer surface of SiC NTs contribute to defect states at the top of the valence band and at the bottom of the conduction band.These results provide reference information for a thorough understanding of the properties of SiC nanostructures and also enable more precise monitoring and control of the growth of SiC nanostructures.     

Simplified synthesis of double-wall carbon nanotubes

We demonstrate a simplified synthesis technique for double-wall carbon nanotubes that is an adaptation of chemical vapor deposition (CVD) techniques used previously for the production of single-wall nanotubes. Double-wall nanotubes (DWNTs) provide ideal geometries for numerous fundamental structural, electronic, thermal and vibrational studies, as well as providing a unique new platform for practical applications. The diameter distribution of DWNTs is broad, and it is possible that in previous studies using CVD-grown small-diameter nanotubes, presumed to be single-wall, there were significant numbers of DWNTs present.     

Reentrant semiconducting behavior of zigzag carbon nanotubes at substitutional doping by oxygen dimers

The electronic structures of carbon nanotubes doped with oxygen dimers are studied using the ab initio pseudopotential density functional method. The fundamental energy gap of zigzag semiconducting nanotubes exhibits a strong dependence on both the concentration and configuration of oxygen-dimer defects that substitute for carbon atoms in the tubes and on the tube chiral index. For a certain type of zigzag nanotube when doped with oxygen dimers, the energy gap is closed and the tube becomes semimetallic. At higher oxygen-dimer concentrations the gap reopens, and the tube exhibits semiconducting behavior again. The change of the band gap of the zigzag tube is understood in terms of their response to the strains caused by the dimer substitutional doping.     

Stability and electronic structure of single-walled InN nanotubes

Based on density functional theory calculations, we predict the stability and electronic structures of single-walled indium nitride (InN) nanotubes. Compared with other group III-nitride nanotubes with a similar diameter, strain energies of InN nanotubes relative to their graphitic sheet are the lowest, suggesting the possibility of the formation of InN nanotubes. Considering the stability of a graphitic InN sheet, InN nanotubes are in metastable states with the stability between GaN nanotubes and AlN nanotubes. Contrary to the case of carbon nanotubes and BN nanotubes, the bond-length of both horizontal and vertical In–N bonds in InN nanotubes decreases as the tube diameter increases. InN nanotubes are all semiconductors with an almost constant band gap of about 1 eV. The existence of a direct gap in zigzag InN nanotubes and the small band gap indicate that they may have potential applications in light emitting devices and solar cells.     

TiO$lt;sub$gt;2$lt;/sub$gt;纳米管电子结构和光学性质的第一性原理研究

运用基于密度泛函理论的第一性原理方法, 系统研究了小尺寸锐钛矿相(n,0)型TiO₂纳米管(D<16 Å)的几何构型、电子结构和光学性质. 结果表明: 随着管径增大, 体系单位TiO₂分子的形成能降低, 体系趋于稳定; 在管径14 Å左右, (n,0)型TiO₂纳米管会发生一次构型的转变. 能带分析显示, TiO₂纳米管的电子态比较局域化, 小管径下(D<14 Å)其导电性更好; 随着构型的转变, TiO₂纳米管由直接带隙转变为间接带隙, 并且带隙值随着管径的增大而增大, 这是由于π轨道重叠效应的影响大于量子限域效应所导致的结果. 两种效应的竞争, 使得TiO₂纳米管的介电函数虚部ε₂ (ω)谱的峰值位置随管径增大既可能红移也可能蓝移, 管径大于9 Å (即(8, 0)管)之后, TiO₂纳米管的光吸收会出现明显的增强. 关键词： 2纳米管')" href="#">TiO₂纳米管 第一性原理 电子结构 光学性质     

Cluster modeling of three types of double-walled armchair silicon carbide nanotubes

A systematic study of three types of armchair double-walled SiC nanotubes (DWNT) (n,n)@(m,m) (3 ≤ n ≤ 6; 7 ≤ m ≤ 12) using the finite cluster approximation is presented. The geometries of the tubes have been spin optimized using the hybrid functional B3LYP (Becke’s three-parameter exchange functional and the Lee-Yang-Parr correlation functional) and the all electron 3-21G* basis set. The study indicates that the stabilities of the double-walled SiC nanotubes are of the same order as those of single-walled SiC nanotubes suggesting the possibility of experimental synthesis of both single-walled and double-walled SiC nanotubes. The binding energy per atom or the cohesive energy of the double-walled nanotubes depends not only on the number of atoms but also on the coupling of the constituent singlewalled nanotubes and their types. A study of the binding energies, Mulliken charges, density of states and HOMO-LUMO gaps has been performed for all nanotubes from (n,n)@(n + 3,n + 3) to (n,n)@(n + 6,n + 6) (n = 3 ? 6). Type 2 DWNTs do not preserve the coaxial geometry when the difference in the chirality of the outer and inner tubes is 5 or less. For type 3, this occurs when the chirality difference is 4 or less. The gaps of types 2 and 3 DWNTs are lower than those of the corresponding single-walled nanotubes and are significantly less than those of type 1 DWNTs.     

Adjustable plasmon resonance in the coaxial gold nanotubes

We propose the coaxial gold nanotubes for their transmission and plasmon resonances theoretically. We find that the transmission spectra are highly adjustable by tuning the thickness of the nanotubes, the separation and the dielectric constant between the inner and outer nanotubes. The resonance peaks close to the left forbidden band gap edge are strongly correlated with the dielectric constant, the inner and outer tube thickness, and the separation between the two tubes. Based on the localized nature of the electric field distributions, we show that local plasmon resonance modes result from hybridized resonances of multifold multipolar plasmon polaritons in the cross section of the coaxial nanotubes.     

卷曲方式对Rh原子在单壁碳纳米管内外吸附的影响

碳纳米管曲率与卷曲方式是同时存在并影响金属原子在碳纳米管内外吸附行为的重要因素, 单独研究卷曲方式对金属吸附行为的影响较困难. 选取曲率相近、卷曲方式不同的扶手椅型(6, 6)、锯齿型(10, 0)与手性(8, 4)单壁碳纳米管(SWCNT), 利用密度泛函理论研究了Rh原子在SWCNT内外的吸附行为. 构型优化表明:由于SWCNT卷曲方式不同, 导致Rh原子在(6, 6),(10, 0)与(8, 4)SWCNT内外吸附的稳定构型不同; 不同卷曲方式亦使SWCNT与Rh原子相互作用的C原子不同, 导致Rh 关键词： 密度泛函理论 单壁碳纳米管 Rh原子 卷曲方式     

Interactions of Fe atom with single wall armchair SiC nanotubes: an ab initio study

A systematic study of Fe atom encapsulation and adsorption in armchair SiC nanotubes (SiCNT) with diameters in the range of 5.313 to 10.582 Å has been performed using hybrid density functional theory and a finite cluster approximation. A detailed comparison of the binding energies, equilibrium positions, Mulliken charges, and spin magnetic moments of Fe atoms has been performed for three types of nanotubes. The electronic states, HOMO–LUMO gaps, and changes in gaps with respect to the bare nanotube gaps have been investigated as well. Our results show that the properties of SiCNT can be modified by Fe atom encapsulation and adsorption. Binding energies of the encapsulated and adsorbed systems indicate that these structures are stable and show site dependence. For both cases a significant band gap decrease is observed for type 1 nanotubes enabling band gap tailoring. This decrease is not observed for the other two types with a larger diameter. All structures are found to have magnetic ground states with high magnetic moments indicating the possibility of them being used in spintronics applications.     

Conductivity of double-walled carbon nanotubes at pressures of up to 30 GPa

Results from experimental studies of the electrical resistance of double-walled carbon nanotubes (DWNTs) in conducting diamond high-Pressure chambers at pressures of up to 30 GPa and room temperature are presented. The effect pressure has on the structure of the outer and inner tubes is analyzed. Ranges of pressure are found in which the electrical resistance of DWNTs changes considerably.     

Determination of optical isomers for left-handed or right-handed chiral double-wall carbon nanotubes

The handedness relationship between adjacent layers in nested double-wall carbon nanotubes (DWNTs) has been investigated for the first time. Our high-resolution electron microscopy analysis on a series of specimen tilts can successfully tell the handedness of each constituent nanotube in a DWNT, and therefore the chiral indices (n, m) including their optical isomers [(n, m) or (m, n)] of inner and outer nanotubes can be uniquely determined. It is shown that right-handed and left-handed nanotubes are equally distributed for both the inner and outer nanotubes in the examined specimens and a preferable handedness relationship between the adjacent layers in DWNT may exist.     

Atomic correlation between adjacent graphene layers in double-wall carbon nanotubes

Atomic correlation between adjacent graphene layers was elucidated for double-wall carbon nanotubes (DWNTs) through a chiral index assignment of two nested nanotubes by high-resolution transmission electron microscopy. Our analysis provides a rather constant diameter difference close to 0.75 nm but no chiral angle correlation between the constituent nanotubes in the concentric DWNTs. The local atomic correlation as a commensurate graphene stacking was repeatedly found in eccentric DWNTs and circumscribed nanotubes, which should lead to elastic deformation and bundling of nanotubes.     

Adsorption on the graphene surface of carbon nanotubes and their energy spectrum

The conditions of formation of local states in the energy spectra of semi-infinite carbon nanotubes with regularly arranged atoms adsorbed on the outer surface are studied in the π-electron approximation. The influence of the adsorption type (physical and chemical), the donor-acceptor properties of adsorbed atoms, their concentration on the graphene surface, and the nanotube diameter on the characteristics of the local states that arise is considered. It is shown that both physical and chemical adsorptions cause a decrease in the band gap separating the upper filled energy band and the lower vacant band. This effect can significantly change the electrical and optical properties of the nanotubes under consideration in comparison with the initial “pure” tubulene.     

Electronic transport in Y-junction carbon nanotubes

Electronic transport measurements were performed on Y-junction carbon nanotubes. These novel junctions contain a large diameter tube branched into smaller ones. Independent measurements using good quality contacts on both individual Y junctions and many in parallel show intrinsic nonlinear transport and reproducible rectifying behavior at room temperature. The results were modeled using classic interface physics for a junction with an abrupt change in band gap due to the change in tube diameter. These Y-junction tubes represent new heterojunctions for nanoelectronics.