Electronic structures and optical properties of Ⅲ_A-doped wurtzite Mg_(0.25)Zn_(0.75)O

The energy band structures, density of states, and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O(IIIA= Al,Ga, In) are investigated by a first-principles method based on the density functional theory. The calculated results show that the optical bandgaps of Mg0.25Zn0.75O:IIIAare larger than those of Mg0.25Zn0.75 O because of the Burstein–Moss effect and the bandgap renormalization effect. The electron effective mass values of Mg0.25Zn0.75O:IIIAare heavier than those of Mg0.25Zn0.75 O, which is in agreement with the previous experimental result. The formation energies of MgZnO:Al and MgZnO:Ga are smaller than that of MgZnO:In, while their optical bandgaps are larger, so MgZnO:Al and MgZnO:Ga are suitable to be fabricated and used as transparent conductive oxide films in the ultra-violet(UV) and deep UV optoelectronic devices.     

Molecular Dynamics Study of the Structural Modification of Porous Silica from Low-Energy Recoils

Molecular dynamics simulations are performed to investigate the effects of low-energy recoils on the microscopic structure of porous silica. Exhibiting a logistic growth with the recoil energy, the displacement probability of Si is shown to be smaller than that of O at the same primary knock-on level. Computations of pair distribution functions and bond angle distributions reveal that this material upon irradiation with energies around the displacement thresholds mainly undergoes structural changes in the medium-range order. In the porous network,while the formation of nonbridging oxygen defects tends to induce shorter Si–O bonds than those formed by bridging oxygen atoms, a remarkable increase of inter-tetrahedral bond angles created by multiple recoils can be observed and associated with the rearrangement of ring statistics.     

Electron density distribution of LiMn_2O_4 cathode investigated by synchrotron powder x-ray diffraction

Electron density plays an important role in determining the properties of functional materials. Revealing the electron density distribution experimentally in real space can help to tune the properties of materials. Spinel Li Mn2 O4 is one of the most promising cathode candidates because of its high voltage, low cost, and non-toxicity, but suffers severe capacity fading during electrochemical cycling due to the Mn dissolution. Real-space measurement of electron distribution of Li Mn2 O4 experimentally can provide direct evaluation on the strength of Mn–O bond and give an explanation of the structure stability.Here, through high energy synchrotron powder x-ray diffraction(SPXRD), accurate electron density distribution in spinel Li Mn2 O4 has been investigated based on the multipole model. The electron accumulation between Mn and O atoms in deformation density map indicates the shared interaction of Mn–O bond. The quantitative topological analysis at bond critical points shows that the Mn–O bond is relatively weak covalent interaction due to the oxygen loss. These findings suggest that oxygen stoichiometry is the key factor for preventing the Mn dissolution and capacity fading.     

Interfacial potential approach for Ag/ZnO （0001） interfaces

Systematic approaches are presented to extract the interfacial potentials from the ab initio adhesive energy of the interface system by using the Chen–M ¨obius inversion method. We focus on the interface structure of the metal（111）/Zn O（0001）in this work. The interfacial potentials of Ag–Zn and Ag–O are obtained. These potentials can be used to solve some problems about Ag/Zn O interfacial structure. Three metastable interfacial structures are investigated in order to check these potentials. Using the interfacial potentials we study the procedure of interface fracture in the Ag/Zn O（0001） interface and discuss the change of the energy, stress, and atomic structures in tensile process. The result indicates that the exact misfit dislocation reduces the total energy and softens the fracture process. Meanwhile, the formation and mobility of the vacancy near the interface are observed.     

Effect of P impurity on NiAlΣ5 grain boundary from first-principles study

First-principles calculations based on the density functional theory(DFT) and ultra-soft pseudopotential are employed to study the atomic configuration and charge density of impurity P in Ni Al Σ5 grain boundary(GB). The negative segregation energy of a P atom proves that a P atom can easily segregate in the Ni Al GB. The atomic configuration and formation energy of the P atom in the Ni Al GB demonstrate that the P atom tends to occupy an interstitial site or substitute a Al atom depending on the Ni/Al atoms ratio. The P atom is preferable to staying in the Ni-rich environment in the Ni Al GB forming P–Ni bonds. Both of the charge density and the deformation charge imply that a P atom is more likely to bond with Ni atoms rather than with Al atoms. The density of states further exhibits the interactions between P atom and Ni atom, and the orbital electrons of P, Ni and Al atoms all contribute to P–Ni bonds in the Ni Al GB. It is worth noting that the P–Ni covalent bonds might embrittle the Ni Al GB and weakens the plasticity of the Ni Al intermetallics.     

Energy dependence on the electric activities of a neuron

A nonlinear circuit can be designed by using inductor, resistor, capacitor and other electric devices, and the electromagnetic field energy can be released from the circuit in the oscillating state. The generation of spikes or bursting states in neurons could be energetically a costly process. Based on the Helmholtz's theorem, a Hamilton energy function is defined to detect the energy shift induced by transition of electric modes in a Hindmarsh–Rose neuron. It is found that the energy storage is dependent on the external forcing, and energy release is associated with the electric mode. As a result, the bursting state and chaotic state could be helpful to release the energy in the neuron quickly.     

Terahertz radiation from pentacene organic diode at room temperature

We investigate terahertz radiation(T-rays) from a pentacene organic diode at room temperature. The quantum chemistry calculation for frequency-related Huang–Rhys factor of pentacene is also carried out. The results demonstrate that the T-rays can come from a bending vibration of pentacene skeleton after the energy of pentacene exciton transferring to the vibrational excited state via electron–phonon coupling. Frequency and natural bond orbital analytics of pentacene and its derivatives are performed in order to explain the result and develop new materials to get higher emission. This work provides a new way to produce T-rays with a simple device at room temperature.     

Effects of Grain Boundary Characteristics on Its Capability to Trap Point Defects in Tungsten

As recombination centers of vacancies(Vs) and self-interstitial atoms(SIAs), firstly grain boundaries(GBs)should have strong capability of trapping point defects. In this study, abilities to trap Vs and SIAs of eight symmetric tilt GBs in tungsten are investigated through first-principles calculations. On the one hand, vacancy formation energy E~f_V rapidly increases then slowly decreases as the hard-sphere radius r_0 of the vacancy increases.The value of E~f_V is the largest when r_0 is about 1.38 ?, which is half the distance between the nearest atoms in equilibrium single crystal tungsten. That is, any denser or looser atomic configuration around GBs than that in bulk is helpful to form a vacancy. On the other hand, SIA formation energy E~f_(SIA) at GBs decreases monotonically with increasing the hard-sphere radius of the interstitial sites, which indicates that GBs with larger interstitial sites have stronger ability to trap SIAs. Based on the data obtained for GBs investigated in this study, it is found that the ability to trap Vs increases as the GB energy increases, and the capability of trapping SIAs linearly increases as the excess volume of GB increases. Due to its lowest GB energy and smallest excess volume among all GBs studied, twin GB ∑3(110)[111] has the weakest capability to trap both Vs and SIAs.     

Self-Bound Quantum Droplet with Internal Stripe Structure in One-Dimensional Spin-Orbit-Coupled Bose Gas

We study the quantum-droplet state in a three-dimensional(3D) Bose gas in the presence of 1D spin-orbit coupling and Raman coupling, especially the stripe phase with density modulation, by numerically computing the ground state energy including the mean-field energy and Lee–Huang–Yang correction. In this droplet state,the stripe can exist in a wider range of Raman coupling, compared with the BEC-gas state. More intriguingly,both spin-orbit coupling and Raman coupling strengths can be used to tune the droplet density.     

Spin-star environment assisted entanglement generation in weakly coupled bipartite systems

We study the entanglement evolution in a weakly coupled bipartite system with a large energy level difference under the influence of spin-star environments. The subsystems can be coupled to a pure state or a thermal equilibrium state spin-star environment. Our results show that, in the case of the coupling strength being less than the energy level difference of the subsystems （weakly coupled）, the spin-star environment can always be used to assist the entanglement generation of the bipartite system.     

A first-principles study of the magnetic properties in boron-doped ZnO

First-principles calculations based on density functional theory are performed to study the origin of ferromagnetism in boron-doped ZnO. It is found that boron atoms tend to reside at Zn sites. The induced Zn vacancy is a key factor for ferromagnetism in Zn1-xBxO (0相似文献   

First principle study of nitrogen vacancy in aluminium nitride

In the framework of density functional theory, using the plane-wave pseudopotential method, the nitrogen vacancy （VN） in both wurtzite and zinc-blende AlN is studied by the supercell approach. The atom configuration, density of states, and formation energies of various charge states are calculated. Two defect states are introduced by the defect, which are a doubly occupied single state above the valance band maximum （VBM） and a singly occupied triple state below the conduction band minimum （CBM） for wurtzite AlN and above the CBM for zinc-blende AlN. So VN acts as a deep donor in wurtzite AlN and a shallow donor in zinc-blende AlN. A thermodynamic transition level E（3＋/＋） with very low formation energy appears at 0.7 and 0,6eV above the VBM in wurtzite and zinc-blende structure respectively, which may have a wide shift to the low energy side if atoms surrounding the defect are not fully relaxed. Several other transition levels appear in the upper part of the bandgap. The number of these levels decreases with the structure relaxation. However, these levels are unimportant to AlN properties because of their high formation energy.     

Interacting Holographic Dark Energy in the Scalar Gauss-Bonnet Gravity

We study cosmological application of interacting holographic dark energy density in the scalar Gauss-Bonnet framework. We employ the interacting holographic model of dark energy to obtain the equation of state for the interacting holographic energy density in a spatially fiat universe. Our calculations show that taking Ω∧ = 0.73 for the present time, it is possible to have w∧^eff crossing -1. This implies that one can generate a phantom-like equation of state from the interacting holographic dark energy model in flat universe in the scalar Gauss-Bonnet cosmology framework. Then we reconstruct the potential of the scalar field.     

First-Principles Study of Intrinsic Point Defects of Monolayer GeS

The properties of six kinds of intrinsic point defects in monolayer GeS are systematically investigated using the“transfer to real state”model,based on density functional theory.We find that Ge vacancy is the dominant intrinsic acceptor defect,due to its shallow acceptor transition energy level and lowest formation energy,which is primarily responsible for the intrinsic p-type conductivity of monolayer GeS,and effectively explains the native p-type conductivity of GeS observed in experiment.The shallow acceptor transition level derives from the local structural distortion induced by Coulomb repulsion between the charged vacancy center and its surrounding anions.Furthermore,with respect to growth conditions,Ge vacancies will be compensated by fewer n-type intrinsic defects under Ge-poor growth conditions.Our results have established the physical origin of the intrinsic p-type conductivity in monolayer GeS,as well as expanding the understanding of defect properties in lowdimensional semiconductor materials.     

Electronic structures and optical properties of Si-and Sn-doped β-Ga_2O_3: A GGA+U study

The electronic structures and optical properties of β-Ga_2O_3 and Si-and Sn-doped β-Ga_2O_3 are studied using the GGA + U method based on density functional theory. The calculated bandgap and Ga 3d-state peak of β-Ga_2O_3 are in good agreement with experimental results. Si-and Sn-doped β-Ga_2O_3 tend to form under O-poor conditions, and the formation energy of Si-doped β-Ga_2O_3 is larger than that of Sn-doped β-Ga_2O_3 because of the large bond length variation between Ga–O and Si–O. Si-and Sn-doped β-Ga_2O_3 have wider optical gaps than β-Ga_2O_3, due to the Burstein–Moss effect and the bandgap renormalization effect. Si-doped β-Ga_2O_3 shows better electron conductivity and a higher optical absorption edge than Sn-doped β-Ga_2O_3, so Si is more suitable as a dopant of n-type β-Ga_2O_3, which can be applied in deep-UV photoelectric devices.     

Electronic structures of halogen-doped Cu2O based on DFT calculations

In order to construct p–n homojunction of Cu2O-based thin film solar cells that may increase its conversion efficiency, to synthesize n-type Cu2O with high conductivity is extremely crucial, and considered as a challenge in the near future. The doping effects of halogen on electronic structure of Cu2O have been investigated by density function theory calculations in the present work. Halogen dopants form donor levels below the bottom of conduction band through gaining or losing electrons, suggesting that halogen doping could make Cu2O have n-type conductivity. The lattice distortion, the impurity formation energy, the position, and the band width of donor level of Cu2O1 xHx(H = F, Cl, Br, I) increase with the halogen atomic number. Based on the calculated results, chlorine doping is an effective n-type dopant for Cu2O, owing to the lower impurity formation energy and suitable donor level.     

Sudden birth and sudden death of thermal fidelity in a two-qubit system

We study the energy level crossing and the thermal fidelity in a two-qubit system with the presence of a transverse inhomogeneous magnetic field.With the help of contour plots,we clearly identify the ground states of the system in different regions of parameter space,and discuss the corresponding energy level crossing.The fidelity between the ground state of the system and the state of the system at temperature T is calculated.The result shows that the fidelity is very sensitive to the magnetic field anisotropic factor,indicating that this factor may be used as a controller of the fidelity.The influence of the Yangian transition operators on the fidelity of the system is discussed.We find that the Yangian operators can change the fidelity dramatically and give rise to sudden birth and sudden death phenomena of the thermal fidelity.This makes the corresponding Yangian operators possible candidates for switchers to turn the fidelity on and off.     

Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine‘s ground state energy (-1/4 effective Rydberg) when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.     

Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine＇s ground state energy （-1/4 effective Rydberg） when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.