Neutron diffraction study of the U(Pd1−xFex)2Ge2 magnetic structure

The neutron diffraction and magnetic susceptibility studies have shown that the magnetic structure of UPd₂Ge₂ changes dramatically even under very low iron doping. Though the general magnetic structure of pure UPd₂Ge₂ and of 1%Fe-doped samples is the same, the temperature intervals of existence of different magnetic phases are different. The values of transition temperatures, where (i) the ‘square’ modulated longitudinal spin-density wave (LSDW) structure with the propagation vector k=(0; 0; ) starts to transform into the sinusoidal modulated LSDW structure and (ii) the commensurate phase transforms into incommensurate one, shift under the 1%Fe doping to the higher temperatures (from 50 to 65 K and from 80 to 90 K, respectively). In the pure and 1%Fe-doped UPd₂Ge₂, the magnetic transition from the commensurate to incommensurate phase is accompanied by the drastic decrease of the propagation vector k_z. In the 2%Fe-doped sample, besides the Néel point of T_N=135 K, we have found two additional characteristic temperatures of 65 and 93 K. Below 65 K, the material has a simple antiferromagnetic (AF) structure with the propagation vector k=(0; 0; 1) and, at 65 K<T<T_N, the magnetic structure is LSDW with sinusoidal modulation. Over almost the total region 65 K<T<T_N, the LSDW magnetic structure is incommensurate. Only at about 93 K, the propagation vector passes the commensurate value of , whereas at 65<T<93 K and at 93 K<T<T_N. We have found that the magnetic susceptibility and the uranium magnetic moment are sensitive to the transition. With increasing iron concentration to x0.15, the simple AF structure with k=(0; 0; 1) develops over all temperature region up to the Néel point. Below T_N, the uranium magnetic moments are always parallel to the tetragonal c-axis.     

On the profile of temperature dependent electrical and dielectric properties of Au/SiO2/n-GaAs (MOS) structures at various frequencies

The temperature (T) dependence of electrical and dielectric characteristics such as series resistance (R_s), dielectric constant (ε′), dielectric loss (ε″), dielectric loss tangent (tan δ), and real and imaginary part of electrical modulus (M′ and M″) of the Au/SiO2/n-GaAs (MOS) structures have been investigated in the temperature range of 80–350 K at various frequencies by using experimental capacitance (C) and conductance (G/w) measurements. Experimental results show that both C and G/w characteristics were quite sensitive to frequency and temperature at especially high temperatures and low frequencies due to a continuous density distribution of interface states and their relaxation time, and thermal restructuring and reordering of the interface. Series resistance values of this device obtained from Nicollian method decrease with increasing frequency and temperature. The ε′, ε″, tan δ, and M′ and M″ were found a strong function of frequency and temperature. While the values of ε′, ε″, and tan δ decrease, M′ and M″ increase with increasing frequency. Also, while ε′ and ε″ increase, M′ and M″ decrease with increasing temperature. The tan δ and M′ values are almost independent temperature especially at high frequencies (f≥500 kHz).     

New ferromagnetic La3Co2TaO9 double perovskite: Structural and magnetic properties

The new double perovskite La₃Co₂TaO₉ has been prepared by a solid-state procedure. The crystal and magnetic structures have been studied from X-ray powder diffraction (XRPD) and neutron powder diffraction (NPD) data. Rietveld refinements were performed in the monoclinic space group P2₁/n. The structure consists of an ordered array of alternating B′O₆ and B″O₆ octahedra sharing corners, tilted along the three pseudocubic axes according to the Glazer notation a⁻b⁻c⁺. Rietveld refinements show that at RT the cell parameters are a=5.6005(7) Å, b=5.6931(7) Å, c=7.9429(9) Å and β=89.9539(7)°, and the refined crystallographic formula of this “double perovskite” can be written as La₂(Co)_2d(Co_1/3Ta_2/3)_2cO₆. Magnetization measurements and low-temperature NPD data show that the perovskite is a ferromagnet with T_C=72 K. At high T it follows the Curie–Weiss law with an effective magnetic moment of 3.82μ_B per Co ion which is very close to spin only Co²⁺ (HS).     

Unconventional magnetic and transport properties in Gd1−xLaxMn2Ge2 with two-dimensional arrangement of Mn atoms

In this paper, we present our recent experimental results of magnetic and transport properties of Gd_1−xLa_xMn₂Ge₂ intermetallic compounds with the ThCr₂Si₂-type layered structure. The results obtained indicate that, in GdMn₂Ge₂, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at T_t3, below the Néel temperature T_N. In Gd_1−xLa_xMn₂Ge₂ compounds with x=0.05 and 0.075, after ordering ferrimagnetically at T_t1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at T_t2 and T_t3. In Gd_0.925La_0.075Mn₂Ge₂, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd_0.925La_0.075Mn₂Ge₂ and TbMn₂Ge₂. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.     

Temperature dependence of the electrical resistivity of R6(Fe1-xMnx)23 compounds in the temperature range 4.2 to 300 K

The temperature dependence of the electrical resistivity of binary R₆Mn₂₃, R₆Fe₂₃ (R = Y, Dy, Ho, Er, Tm) and pseudobinary R₆(Fe_1-xMn_x)₂₃ (R = Y, Er, Ho) compounds has been determined by a four-probe measuring technique in the temperature range 4 to 400 K.The binary compounds exhibit a prop. T² dependence at low temperatures, while above 100 K a negative curvature of the -T-curves is observed.These experimental results are discussed on the basis of electron-spin wave scattering in the low temperature range and on the basis of s-d scattering in the high temperature range, taking explicitly into account the temperature dependence of the chemical potential.The pseudobinary compounds generally exhibit a decreasing resitivity with increasing temperature, combined with a high residual resistivity. These facts are explained by the so-called strong scattering mechanism and the appearance of “quasilocalized” states.     

Annealing effect on the superconductivity of In2O3–ZnO thin films

We have investigated the relation among ρ–T characteristics, superconductivity, annealing conditions and the crystallinity of polycrystalline (In₂O₃)_1−x–(ZnO)_x films. We annealed as-grown amorphous films in air by changing annealing temperature and time. It is found that the films annealed at 200 °C or 300 °C for a time over 0.5 h shows the superconductivity. Transition temperature T_c and the carrier density n are T_c < 3.3 K and n ≈ 10²⁵–10²⁶ m⁻³, respectively. Investigations for films with x = 0.01 annealed at 200 °C have revealed that the T_c, n and crystallinity depend systematically on annealing time. Further, we consider that there is a suitable annealing time for sharp resistive transition because the transition width becomes wider with longer annealing times. We studied the upper critical magnetic field H_c2(T) for the film with different annealing time. From the slope of dH_c2/dT for all films, we have obtained the resistivity ρ dependence of the coherence length ξ(0) at T = 0 K.     

Influence of oxygen growth pressure on laser ablated Cr-doped In2O3 thin films

We present a systematic investigation of the effects of oxygen growth pressure on the structural, optical, and electrical properties of In₂O₃:Cr thin films grown by pulsed laser deposition. X-ray diffraction analysis showed increases in lattice constant from 10.103 Å to 10.337 Å, and in particle size from 13.9 nm to 35.5 nm as the oxygen growth pressure increased from 7.5 × 10⁻⁶ Torr to 7.5 × 10⁻³ Torr, respectively. The observed shift in the X-ray diffraction peaks to lower angles was assumed to be caused by the reduction in the lattice defect density, precisely oxygen vacancies. The optical transparency increased with partial oxygen pressure (P_O2), and an average transmittance of 85% was obtained at 7.5 × 10⁻³ Torr. The films are highly conducting with resistivity as low as 2 × 10⁻⁴ Ω cm and mobility as high as 133 cm/V s. Temperature dependent resistivity measurements in the 45 < T < 300 K temperature range reveal that films grown at 7.5×10⁻⁶≤P_O2≤7.5×10⁻⁴ Torr exhibit negative temperature coefficient of resistivity (TCR) below approximately T = 60 K, T = 120 K, T = 160 K; then positive TCR in the temperature intervals 60 < T < 300 K, 120 < T < 300 K, and 160 < T < 300 K, respectively. This suggests that two disparate mechanisms govern electrical dc transport in the two temperature regions. Film grown at P_O2 of 7.5 × 10⁻³ Torr displayed typical semiconducting behavior with negative TCR in the whole temperature region.     

The double-phase transition of ErFe4Ge2. An XRPD study

High-quality powder XRD data of the compound ErFe₄Ge₂ collected in the ESRF beam line BM16, are presented for the entire magnetically ordered regime (T_N=44 K). The data analysis reveals the occurrence of a double symmetry breaking at the magnetic transition. This experiment has allowed us to distinguish between structural and magnetic satellites, both present in the neutron patterns, and to demonstrate the interdependence of structural and magnetic transitions. The high-temperature (HT) phase disproportionates by a first-order transition into two distinct phases: P4₂/mnm (T_c, T_N=44 K)→Cmmm (majority LT phase)+Pnnm (minority IT Phase) which coexist in proportions varying with temperature down to 4 K. The phase diagram comprises three temperature regions: (a) the HT range with T>T_N for the tetragonal P4₂/mnm phase; (b) the IT (intermediate temperature) range, 20 K<T<T_N, where the two phases coexist in strongly variable proportions and the Pnnm phase reaches its highest concentration (≈31%) around 30 K and (c) the LT (low temperature) range, 1.5–20 K, where the Cmmm phase is dominating (up to 95%). We suggests that this phenomenon is the result of competing magneto-elastic mechanisms involving the Er crystal field anisotropy, the Er–Er, Er–Fe and the Fe–Fe exchange interactions and their coupling with the lattice strains.     

Spectroscopic Study of the Na2 2Σg State by cw Perturbation-Facilitated Optical-Optical Double-Resonance Spectroscopy

The Na₂(3sσ_g)(4sσ_g) 2³Σ⁺_g state of Na₂ has been observed and studied by cw perturbation-facilitated optical-optical double-resonance (PFOODR) spectroscopy for the first time. A single-mode dye laser and a Ti-sapphire laser served as the pump and the probe lasers, respectively. A total of 543 PFOODR excitation signals have been assigned to the 2³Σ⁺_g ← b³Π_1u transitions. Absolute vibrational numbering was determined by counting nodes in the 2³Σ⁺_g → a³Σ⁺_u bound-free spectra. Spectroscopic constants and the corresponding RKR potential energy curve are presented in this vsork. The values of T_e, R_e, and D_e, are found to be 25 551.237(49) cm⁻¹, 3.53463(35) Å, and 6211.5(1) cm⁻¹ respectively.     

Specific heat anomaly in Bi1.6Pb0.4Sr2Ca2Cu3Oy superconductor

The specific heat anomaly ΔC of Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_y was observed in the temperature range 80–100 K. It is estimated from ΔC that γ15 mJ/mol·K² and H_{c2(T=0)100 T} in this sample. The specific heat anomaly confirmed the occurrence of bulk superconductivity of the high-T_c phase in Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_y superconductor.     

Self-broadening, self-shift and self-mixing in the ν2, 2ν2 and ν4 bands of NH3

Using Fourier-transform spectra (Bruker IFS 120 HR, resolution ≈0.004 cm⁻¹) of NH₃ in nine branches of the ν₂, 2ν₂ and ν₄ bands, self-broadening and self-shift as well as self-mixing coefficients have been determined at room temperature (T=295 K) for more than 350 rovibrational lines located in the spectral range 1000–1800 cm⁻¹. A non-linear least-squares multispectrum fitting procedure, including line mixing effects, has been used to retrieve successively the line parameters from 11 experimental spectra recorded at different pressures of pure NH₃. The accuracies of self-broadening coefficients are estimated to be better than 2% for most lines. The mean accuracies of line-mixing and line-shift data are estimated to be about 15% and 25%, respectively. The results are compared with previous measurements and with values calculated using a semiclassical model based upon the Robert–Bonamy formalism that reproduces rather well the systematic experimental J and K quantum number dependencies of the self-broadening coefficients.The results concerning line mixing demonstrate a large amount of coupling between the symmetric and asymmetric components of inversion doublets mainly in the ν₄ band. The line mixing parameters are both positive and negative. More than two thirds of the lines studied here have a positive shift coefficient. However, for most of them the shift coefficients are negative in the 2ν₂ band. They are positive for the R branch of the ν₂ band and for the ^PR and ^RP branches of the ν₄ band. For the other branches they are both positive and negative. Some components of inversion doublets illustrate a correlation between line mixing and shift phenomena demonstrated by a quadratic pressure dependence of line position.     

Analysis of the 2ν3 band of CD3F at 5.06 μm recorded under high resolution

The 2ν₃(A₁) band of ¹²CD₃F near 5.06 μm has been recorded with a resolution of 20–24 × 10⁻³ cm⁻¹. The value of the parameter (α^B − α^A) for this band was found to be very small and, therefore, the K structure of the R(J) and P(J) manifolds was unresolved for J < 15 and only partially resolved for larger J values. The band was analyzed using standard techniques and values for the following constants determined: ν₀ = 1977.178(3) cm⁻¹, B″ = 0.68216(9) cm⁻¹, D″_J = 1.10(30) × 10⁻⁶ cm⁻¹, α^B = (B″ − B′) = 3.086(7) × 10⁻³ cm⁻¹, and β^J = (D″_J − D′_J) = −3.24(11) × 10⁻⁷ cm⁻¹. A value of α^A = (A″ − A′) = 2.90(5) × 10⁻³ cm⁻¹ has been obtained through band contour simulations of the R(J) and P(J) multiplets.     

Phase transitions in [Ni(NH3)6](NO3)2

Electric permittivity ^* = ′ − i″ of nickel-hexammino nitrate (NHN) has been measured within the range of temperature from 9 to 300 K at a frequency of 8.8 GHz (X-band). It has been found that the phase transitions at T_k1 = 247 K and T_k2 = 90 K are discontinuous structural transitions between centrosymmetric phases, whereas the transition at T_c = 63 K is a continuous phase transition (glass?).     

Argon matrix absorption spectra of ClO, BrO, and IO and emission spectra of IO

Absorption spectra of ClO, BrO, and IO and the emission spectrum of IO have been observed from argon matrix samples prepared by microwave discharging the reagent mixture before condensation. Vibronic progressions were observed for each system. The spectroscopic scopic constants T_e, ω′_e, ω_ex′_e, ω″_e, and ω_ex″_e were evaluated from the absorption and emission data for comparison with gas-phase constants. Very good agreement is found for ClO. The argon matrix observations dictate a revision of the gas-phase vibronic assignments for BrO. The ground-state vibrational fundamental and T_e for argon matrix isolated IO are similar to the gas-phase values, but a lower excited-state spacing is found in the matrix.     

Effect of aerosil dispersions on the nematic-to-isotropic interface

The effect of silica aerosils on the kinetics of the first-order nematic-isotropic (NI) phase transition is phenomenologically described in the framework of the time-dependent Landau-Ginzburg equation. A steady-state solution to the equation is presented such that the NI interface may propagate with a solitary-like wave profile under constant quenching. The results provide a plausible basis for the interpretation of the dynamical effects of quenched disorder in the liquid-crystal systems, caused by randomly interconnected porous media, such as aerosils. In the low silica aerosil ρ_s ( ≤0.1 g/cm^3) regime, the calculated values of the interface velocity v(T,ρ_s), the interface thickness κ(T,ρ_s), and the critical radius of a spherical nucleus of new nematic phase in a bulk isotropic environment, composed of polar molecules, such as 4-n-octyl- 4^′- cyanobiphenyl and 4-n-heptyl- 4^′- cyanobiphenyl shows that the effect of silica aerosils on the kinetics is reflected in a shifting of the set of temperature-dependent curves to lower temperature values.-1     

Phase separation with charge self-organization in the Tb0.95Bi0.05MnO3, Gd0.75Ce0.25Mn2O5, and Eu0.8Ce0.2Mn2O5 manganite multiferroics

New doped manganite multiferroics Tb_0.95Bi_0.05MnO₃, Gd_0.75Ce_0.25Mn₂O₅, and Eu_0.8Ce_0.2Mn₂O₅, which are semiconductors, have been grown and studied. The starting dielectric multiferroics TbMnO₃ and RMn₂O₅ (R = Gd and Eu) have close magnetic and ferroelectric ordering temperatures of 30–40 K. The crystals studied are multiferroics in which states with giant permittivity and ferromagnetism coexist at room temperature. An analysis of the dielectric properties suggests that, at temperatures T ≥ 180 K, these crystals undergo a phase separation involving dynamic periodic alternation of quasi-2D layers of mixed-valence manganese ions, a process accounting for the onset of charge-induced ferroelectricity. At low temperatures (T < 100 K), a small phase volume in the crystals is occupied by as-grown quasi-2D layers containing dopants and carriers. Most of the crystal volume is occupied by the carrier-free dielectric phase. Thermally activated hopping conduction involving carrier self-organization in the crystal matrix with ferroelectric frustrations drives a phase transition to the state of charge-induced ferroelectricity at T ∼ 180 K. Original Russian Text ? V.A. Sanina, E.I. Golovenchits, V.G. Zalesskiĭ, 2008, published in Fizika Tverdogo Tela, 2008, Vol. 50, No. 5, pp. 874–882.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

The emission spectrum of the diatomic radical, phosphorus selenide

The emission spectrum of the PSe radical is reported for the first time. Seventy-eight reddegraded bands in the region 4000–6500 Å have been measured and assigned to the A²Π-X²Π transition of PSe. Isotope shifts observed for some bandheads have been utilized in deriving the vibrational numbering. The molecular constants have been determined as (in units of cm⁻¹): ω′ = 406.9, ω′_eχ′_e = 1.3, ω″ = 556.9, ω″_eχ″_e = 1.3, and T_e = 19477.3 for the ²Π_1/2 states; and ω′_e = 402.4, ω′_eχ′_e = 1.5, ω″_e = 556.8, ω″_eχ″_e = 1.6, and T_e = 19178.0 for the ²Π_3/2 states.     

The ν1 and ν3 stretching fundamental bands of PD3

The infrared (IR) spectrum of PD₃ has been recorded in the 1580–1800 cm⁻¹ range at a resolution of 0.0027 cm⁻¹. About 2400 rovibrational transitions with J^′=K^′22 have been measured and assigned to the ν₁ (A₁) and ν₃ (E) stretching fundamentals. These include 506 “perturbation-allowed” transitions with selection rules Δ(k−l)=±3. Splittings of the K^′′=3 lines have been observed. Effects of strong perturbations are evident in the spectrum. Therefore the rovibrational Hamiltonian adopted for the analysis explicitly takes into account the Coriolis and k-type interactions between the v₁=1 and v₃=1 states, and includes also several essential resonances within these states. The rotational structure in the v₁=1 and v₃=1 vibrational states up to J^′=K^′=18 was reproduced by fitting simultaneously all experimental data. Thirty-four parameters reproduced 1950 transitions retained in the final cycle with a standard deviation of the fit equal to 4.9 × 10⁻⁴ cm⁻¹ (about the precision of the experimental measurements).     

Magnetoresistance of the compound CeRu2Ge2

In this work we present a magnetoresistance study on the CeRu₂Ge₂ compound. We analyze the ρ(T) curves for several applied magnetic fields using the electron–magnon scattering model for a ferromagnetic spin arrangement. From this analysis, the field dependence of the energy gap of the magnon spectrum is obtained. The magnetoresistance ρ(H) at various temperatures arises from a normal metal contribution with an additional scattering mechanism due to electron–magnon interaction.