Volume dependence of the superconducting transition temperature of quench-condensed be films

The volume dependence of the superconducting transition temperatureT _c of quench-condensed Be films is investigated by bending the substrate of the film. Tensile strain causes an increase, compressive strain a decrease ofT _c . The volume coefficientd lnT _c /d lnV is about 0.8, a value which is small compared with those of other weakcopling non-transition metals. In addition to pure films, Be films stabilized by codeposition of noble metals or Ge are investigated.Paper based in part on a Habilitationsschrift submitted to the Fakultät für Physik, Universität Karlsruhe (TH), FRG     

The thermal conductivity of disordered and amorphous metal films

The thermal conductivity of quenched condensed polycrystalline and amorphous Pb and Pb_0.9Cu_0.1 films has been measured between 0.5 and 11 K, i.e. in the superconducting (T7 K) and in the normal state (T7 K). Whereas, in agreement with previous results, phonon heat transport is very small for crystalline films, a considerable portion of heat is carried by phonons in amorphous films, owing to the absence of extended lattice defects. Phonon scattering in these latter films is analyzed in terms of scattering from conduction electrons aboveT _c, whereas well belowT _c it is very likely due to low energy excitations inherent in the amorphous structure.Work performed within the research program of the Sonderforschungsbereich 125 — Aachen/Jülich/Köln     

Effect of hydrostatic pressure on phase transition and superconductivity in LaAg x In1−x,LaCd and LaZn

Previous studies of phase transformation and superconductivity on LaAg under pressure are extended to further CsCl-compounds LaAg_0.5In_0.5, LaCd, and LaZn. The cubic-totetragonal transition temperatureT _M in LaAg_0.5In_0.5 and LaCd increases rapidly with pressure, whereas LaZn does not transform to 16 kbar. The present results are used to correct the dependence ofT _M onx in LaAg _x In_1–x to constant volume; the bell-shaped curveT _M (x) with maximum atx0.5 is thereby corrected to one whereT _M rises steeply with In concentration across the entire range. A possible correlation between the magnitude ofT _M and the extent ofd-band occupation is inferred. Above 1.17 K only LaZn is found to be superconducting withT _c (0)=1.65 K;T _c (P) passes through a shallow minimum at 6 kbar.     

Unusual behaviour of conductivity and superconductivity in solid Sn−Xe mixtures

We have measured the normal statedc conductivity , the superconducting transition temperatureT _c and the critical superconducting currentI _c0 of frozen Sn–Xe mixtures in dependence of the Sn atomic fractionc. A new, high-T _c phase is observed forc between 0.58±0.02 and 0.74±0.02. This phase has aT _c-value of about 5.7 K, it shows a strong decrease in and inI _c0 and transforms into disordered Sn during annealing between 15 K and 50 K.It is a pleasure for us to dedicate this paper to Prof. Dr. S. Methfessel on the occasion of his 60^th birthday.This work was supported by the Deutsche Forschungs-gemeinschaft     

Superimposed normal and superconducting films

Tunneling characteristicsdI/dV have been taken on both sides of “dirty”In - Bi/Zn superimposed films, the temperatureT being such thatIn - Bi was superconducting and Zn normal. Most of the attention has been devoted to the regionT～T _c where the experimental curves can be compared with a reasonably accurate microscopic theory. We find reasonable agreement for the voltage scale and, more important, for theamplitude of the effects in the superconducting phase.     

Pressure effect onT c and resistivity: Localization in YBa2Cu3O x oxides

We have studied the effect of hydrostatic pressures up to 20 Kbar on the temperature dependence of the resistivity (T) and the effect of quasihydrostatic pressure up to 200 Kbar on the lattice parameters of YBa₂Cu₃O _x for different oxygen concentrations (x=6.95–6.2). Pressure produces a decrease of resistivity in normal state, an increase ofT _c , and a suppression of semiconducting-like resistivity (T) at lowx. The dependence of dT _c (x)/dP onx is nonmonotonic; the record values of dT _c /dP=(1.0±0.1) K/Kbar are observed forx=6.7 and 6.8. The derivative dln/dP atT=293 K differs by the factor 1.8 between superconducting and nonsuperconducting compounds. The compressibility and its pressure derivative alonga, b andc-directions in YBa₂Cu₃O _x have been determined. The most remarkable variation is alongc-direction. A nonmonotonic dependence of dk _c (x)/dP onx has been observed.The results are discussed in the context of localized effects in disordered oxygen-deficient YBa₂Cu₃O _x .     

Ion irradiation—a technique providing a criterion to distinguish between amorphous and nanocrystalline In1−x Pd x films

In_1–x Pd _x films with 0.2x0.75 have been prepared by vapour quenching at 4.2 K or 77 K, respectively. To test whether amorphous (a-) phases can be obtained in this way, the resistance behavior and the electron diffraction patterns of the as-prepared and annealed films were studied insitu. For films withx=0.25 additional information could be acquired from their superconducting behavior. Combining these results one concludes that a-phases exist for the compositional range 0.2x0.6, which are stable up to crystallization temperaturesT _x within the range 250 KT _x 420 K. Irradiation of the crystallized films at low temperatures (4.2 K or 77 K) with heavy ions (350 keV Ar⁺ or Kr⁺) leads to complete re-amorphization. Forx=0.67 corresponding to InPd₂ a nanocrystalline (n-) phase is obtained by vapour quenching at 77 K as inferred from x-ray diffraction. AtT _x =700 K, thesen-films exhibit a drop of the electrical resistance indicating the beginning of significant grain growth. After recooling, Kr⁺ bombardment at 77 K does not restore the high electrical resistance of the as-quenchedn-film. This result can be used as a criterion when studying quenched films withx=0.625 corresponding to In₃Pd₅. In this case, a resistance drop is found atT _x =600 K, but the diffraction techniques do not allow an uniquevocal distinction between amorphous and nanocrystalline. This becomes possible by low temperature ion irradiation after annealing atT>T _x . The bombardment results in resistance changes, which saturate well-below the value of the as-quenched sample implying nanocrystallinity for the latter. Based on this criterion, a phase-diagram for quenched In_1–x Pd _x is provided with 0x1 containing the newly detecteda- andn-phases.     

Preparation of high J c YBa2Cu3O7−δ superconducting thin films by ion beam sputtering deposition

Preparation of high T _c and high J _c YBa₂Cu₃O_7– superconducting thin films by ion beam sputtering deposition is reported. The main factors affecting the composition of the films and the orientation of the crystal grains have been examined. Experimental results show that the Y, Ba and Cu composition of as-deposited films can be conveniently and accurately adjusted by a combined sputtering target which consists of a large sintered target of YBa₂Cu₃O_7– and a small one that is Ba and Cu rich (YBa_2.5Cu_3.3O_x). Fabrication conditions of highly oriented superconducting thin films are described. YBa₂Cu₃O_7– superconducting films with zero resistance at 88–90.5K and critical current density J _c (at 77K) of 1.5×10⁵ A/cm² are obtained.     

Pressure dependence of superconductivity in amorphous La100−xAlx alloys

The pressure dependence of the superconducting transition temperatureT _c of amorphous La_100–x Al _x alloys (x=16.5, 20, 25, 30, 34) has been studied under hydrostatic pressure to 3.5 GPa and, additionally, forx=16.5 under quasihydrostatic pressure to 12 GPa. For amorphous samples having Al-concentrationx>20%, T _c /P is positive in sign and decreases linearly with increasingx, extrapolating atx=0 to the same value (+1.1 K/Gpa) determined for pure crystalline La. For thex=16.5 sample, however, T _c /P is observed to be anomalously large, more than twice the value expected. The present results are compared with previous studies on amorphous and crystalline La-systems.This paper is dedicated to Prof. Methfessel of this institution on his 60th birthdayThis work is supported by the Minister für Wissenschaft und Forschung des Landes Nordthein-Westfalen     

Low temperature properties of (La,Nd)Sn3 alloys

Dilute (La_1–x Nd _x )Sn₃ alloys with 0.01<x<0.15 are characterized by determination of the superconducting transition temperatureT _c as well as low temperature measurements of the specific heat and inelastic neutron scattering. As an important result of these experiments we found that the Nd impurities in LaSn₃ exist as stable trivalent ions, in contrast to all other light rare earths. In addition, specific heat and neutron scattering results revealed the scheme of crystal field (CF) levels of Nd³⁺.Using this level scheme, the concentration dependence of the superconducting transition temperature,T _c (x), could be quantitatively fitted up tox9 at % by the theory of Keller and Fulde [J. Low. Temp. Phys.4, 289 (1971)]. From the relatively high initial slope ofT _c (x) we inferred that — besides isotropic spin exchange — other pair-breaking processes are important.In contrast toT _c (x), the reduced specific heat jumpsC/C ₀ as a function ofT _c /T _c0 (whereT _c0 andC ₀ refer to LaSn₃) were found to lie considerably below the theoretical curve for isolated Nd³⁺ ions. This is explained by Nd—Nd interactions resulting in a mean Zeeman splitting (<k _B T _c ) of the CF ground state, which could be directly observed in the form of broadened Schottky humps in the normal state specific heats.     

The influence of dielectric films on the superconductivity of thin Sn and Tl films

The change in transition temperature for thin Sn and Tl films has been measured after deposition of dielectric substances. The change in transition temperature is inversely proportional to the thickness of the superconducting film and relatively independent of the thickness of the dielectric film. When SnS or Tl₂Se is deposited on Sn films, the transition temperature is depressed. When TICl or Tl₂Se is deposited on Tl films, the transition temperature is increased. When S is deposited on Tl films, there is no initial change inT _c ; however,T _c is appreciably increased after annealing. A possible explanation for this effect is the reduction of the free electron concentration in the metal through the formation of the contact potential between the dielectric and the metal.     

Study of the effect of the substitution of O by F,S, and Cl on the superconductivity of Y1Ba2Cu3O7−δ

We have studied the superconducting transitions of Y₁Ba₂Cu₃D _x O_7–x– samples where O has been replaced by D=F, S, or Cl andx=0.2-2. No single phase compounds were obtained forx>0.2. No dramatic increase inT _c was registered. Generally the results can be interpreted as a dilution of the highT _c 1 2 3 phase by other phases as the dopant concentration increases, ultimately suppressingT _c completely. Possibly there is an increase ofT _c for an intermediate dopant range,x, in the Cl series.     

Low temperature self-ion irradiation of pure and granular aluminium-films

Al-films, evaporated at room temperature under different oxygen partial pressures, were irradiated with self-ions (500 keV, Al⁺⁺) at low temperature (<7 K). The observed increase of the resistivity and of the superconducting transition temperatureT _c depends strongly on the oxygen contentc ₀ present in the layers. A qualitative different behaviour of the above quantities was found for different fluence ranges of the bombarding ions. For high fluences in all cases an oxygen stabilized disorder state was obtained with correspondingT _c-increases betweenT _c=0.2 K for the purest films (c ₀0.5 at %) andT _c =1.2 K for films with c ₀=40 at %. The annealing behaviour of the irradiated films is also dependent on the oxygen contentc ₀.     

Die Übergangstemperatur der Supraleitung verschiedener Metalle unter dem Einfluß sehr dünner Oxydschichten

The superconducting transition of thin films of Al, In, Tl, Pb, Sn, and Ga⁺ is investigated by resistance measurements before and after the low temperature oxidation of the surface. The films are condensed onto a crystalline quartz plate to a thickness of about 100 Å or less at a temperature of mostly 105 °K. The oxidation process below 40 °K was described in a previous paper. After a theory ofMott, it may be understood by the tunneling of electrons from the metal to some acceptor levels of the oxygen molecules at the outside of the oxide layer. This way, a strong electric field arises which, on the one hand, facilitates the motion of metal ions outwards to form oxide molecules and, on the other hand, is suspected to affect the transition temperature. The experimental results show a shift of the transition to higher temperatures with the metals Al, In, and Tl, however, with the metals Sn, Pb, and Ga⁺ to lower temperatures. These results agree qualitatively very well with direct measurements of the influence of surface charges on the superconducting transition of Sn and In byGlover andSherrill. TheT _c -shift depends clearly upon the film thickness and amounts to about 0.3 to 0.4 °K for the thinnest films used. Some experiments are undertaken in order to prove the existence of the electric field. Removing the residual oxygen molecules on top of the oxide layer destroys the acceptor levels and causes a reduction of the transition temperature to the value observed with the oxygen free film. As expected, the thickness of the oxide layer is not important for the magnitude of theT _c shift.     

High-T c superconducting Bi−Sr−Ca−Cu−O thin films prepared by laser-induced plasma deposition

High-T _c superconducting thin films of Bi–Sr–Ca–Cu oxides were prepared by laser-induced plasma deposition of high-T _c superconducting Bi₂Sr₂Ca₁Cu₂O_x and Bi₂Sr₂Ca₂Cu₃O_x targets in vacuum and a short post-annealing in air at 875°C. Thin films (thickness <500 nm) with a critical temperatureT _c -onset of 95 K can be prepared on silicon substrate material with a SrTiO₃ interface layer. The thin films were completely superconducting between 80 and 90 K. The stoichiometry transfer of superconducting target material by laser-induced plasma deposition was investigated.     

Interplay of localization and superconducting fluctuations above the critical point

A review of some developments in localization effects on conductivity and magnetoconductivity is given. The determination of inelastic scattering rates for electrons in thin disordered metallic films is emphasized. In two-dimensional disordered superconductors aboveT _c , the superconducting fluctuations play an essential role. Recent work on the interplay of localization and superconducting fluctuation effects in determining the magnetoconductivity and the inelastic rate is described.     

Knight shift in superconducting oxides BaPb<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript>x</Subscript>O<Subscript>3</Subscript> (<Emphasis Type="Italic">x</Emphasis> < 0.35)

The Knight shift ²⁰⁷K_s for the ²⁰⁷Pb nuclei in the metal phase of the oxides BaPb_1?xBi_xO₃ (x < 0.35) has been analyzed as a function of the concentration. The shift, which is proportional to the density of states near the Fermi energy: ²⁰⁷K_s ～ N(E_F), reaches a maximum for an oxide with the maximum superconducting transition temperature T_c(x ≈ 0.25) = 12 K. A significant increase in the width of the shift distribution with the Bi concentration testifies to the formation of a nonuniform state of the electronic system in the conduction band of superconducting oxides, which is accompanied by an increase in short-wavelength contributions to the spin susceptibility. To detect the ²⁰⁷Pb NMR spectra in superconducting oxides with x > 0.2, the ¹⁷O-²⁰⁷Pb spin-echo double-resonance method is used, which provides successful detection of the ²⁰⁷Pb NMR signal with an anomalously high rate of spin-spin relaxation T ₂ ^?1 > 500 ms^?1. Thus, fundamental restrictions arising in investigations of rapidly relaxing ²⁰⁷Pb nuclei, which are “unobservable” in superconducting oxides BaPb_1?xBi_xO₃ when they are studied by traditional single-resonance methods of pulse NMR spectroscopy, have been overcome.     

Magnetic properties of GdBa2Cu3O7−x in the normal and superconducting states

The magnetic properties of superconducting GdBa₂Cu₃O_7–x withT _c95 K are measured. In the normal state, its susceptibility closely follows the Curie law with an effective moment of 7.77 _B .H _c1 is determined to be 650 Oe. No superconducting fluctuation can be delineated. Flux pinning indicated behavior of type II superconductors. A 25–405 diamagnetic state indicating bulk superconductivity in GdBa₂Cu₃O_7–x .     

Effects of indium doping on the superconducting properties of YBa2Cu3Oy sintered compounds and thin films

We investigated the effects of indium doping on the superconducting properties of YBCO sintered samples and thin films. In₂O₃-doped YBCO and YBa₂Cu_3−xIn_xO_y sintered samples showed a gradual decrease in the critical temperature (T_c) with increasing indium content; however, a T_c value above 80 K was maintained even up to 30 vol.% addition and x = 0.4, respectively. Ba₃Cu₃In₄O₁₂ was detected by X-ray diffractometry and energy-dispersive X-ray spectroscopy as a reaction product for both sintered samples. The normalized J_c under a magnetic field of 0.1 T showed a maximum at x = 0.3. Indium-doped YBCO films prepared by pulsed laser deposition showed a similar dependence of T_c on indium content as the sintered samples.     

Superconductivity of thin films of lead,indium, and tin prepared in the presence of oxygen

We have studied the influence of oxygen on the superconducting properties of thin films of lead, indium and tin deposited on glass or sapphire substrates. In addition, the morphological microstructure was investigated by scanning electron microscopy. The film thickness was 1.0 μm, and the partial pressure of O₂ during the film deposition was raised up to 1×10⁻⁴ Torr. In all three materials the development of a granular structure and a strong increase in the residual electric resistivity was observed due to the O₂-treatment. Whereas in the Pb films no change of the critical temperature was found, the In films deposited on glass substrates showed a slight increase ofT _c due to the oxygen. The strongest increase ofT _c (up to 8%) was observed in the O₂-treated Sn films. These results are discussed in terms of the McMillan theory. From our measurements of the critical current densityj _c we conclude that edge pinning is dominant in the undoped films. All three materials showed a strong increase ofj _c due to the O₂-treatment which must be interpreted in terms of bulk pinning.