Temperature dependence of oxidation rate in clean Ge(111)

The temperature dependence of the sticking coefficient of oxygen on a clean Ge(111) surface has been investigated over a wide temperature range from 300 to 1100 °K using three methods. In the interval 300–600 °K a flash technique was used, the desorbed germanium oxide being detected by the time of flight mass-spectrometer. In the range from 500 to 1000 °K the sticking coefficient was measured from the pumping speed of oxygen by the sample surface, and in the range from 800 to 1100 °K the temperature dependence of the etching speed by oxygen was determined.The measured temperature dependence of the sticking coefficient is complex. It increases between 300 and 400 °K, remaining virtually constant from 400 to 500 °K with a new increase in the range from 500 to 1000 °K. A rapid fall in the sticking coefficient was observed at temperatures above 1000 °K.The dependence of the adsorption coverage on exposure has also been obtained for sample temperatures of 300, 350, 400 and 500 and 600 °K. The form of the adsorption curves differs considerably from a theoretical one based on a decrease in the sticking coefficient with coverage given by s = s₀(1 ? θ)². At 600 °K the sticking coefficient decreases more slowly than predicted by this equation. On the contrary, at 300 °K it begins to decrease rapidly at low coverages less than 0.1 of a monolayer.To explain the results it is assumed that oxygen molecules adsorb on the surface structural defects. At 300 °K such defects may be in the form of steps or other morphological disturbances on the surface, and above 500 °K they are probably equilibrium thermal defects, for example, surface vacancies.     

Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces

External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.     

A LEED-AES study of the oxidation of Fe (110) and Fe (100)

Simultaneous LEED and AES observations have been used to study the initial stages of oxidation of the Fe(110) and Fe(100) single crystal surfaces at 300 K and 400 K and of a clean Fe polycrystal at 300 K. Accurate surface lattice spacings of the precursory oxide structures have been measured and attempts have been made to quantitatively evaluate the corresponding surface oxygen density.On the (110) single crystal surface the final structure is FeO-like with a lattice spacing 4% larger than that of bulk FeO. The transition to the FeO-like structure starts with a surface lattice expansion in the [11̄0] direction followed by an expansion in the [001] direction in order to accommodate the (111) face of the FeO-like structure. On the (100) single crystal face the oxygen and iron form an fcc (100) face which initially contracts and then expands with increasing oxygen doses. The structure formed at 300 K is spinel-like but heat treatment causes a transition to FeO(100).The changes of the surface unit cell dimensions are interpreted as the result of an interaction between adsorbate and substrate. This interaction is strongest in a direction parallel to the close packed rows of the substrate, making the corresponding periodicity of the adsorbate more resistant to lattice changes.In the case of the polycrystal a hexagonal structure was observed after oxygen adsorption with no simple relation to the oxide structures observed on the single crystals. The initial sticking coefficients in the interval 0–10^?5 torr sec ranged from 0.07 to 0.36 depending on temperature and crystal face observed. The latter dependence is explained in terms of the surface structure.     

HREELS study of formic acid adsorption on gold (110) and (111) surfaces.

The adsorption at 100 K and the temperature decomposition of formic acid were investigated on (110) and (111) gold single crystal surfaces by high resolution electron energy loss spectroscopy. A multilayer build-up of physisorbed HCOOH with intense hydrogen bondings was observed at increasing coverages for the two gold surface orientations. Above room temperature, formic acid decomposed and desorbed from the (110) crystal, whereas it evolved into an intermediate formic anhydride on the (111) face. Further heating produced on the surfaces species similar to those observed on oxygen treated metals.     

Oxygen adsorption on Ge(111) surface: I. Atomic clean surface

Oxygen adsorption on a clean Ge(111) surface has been studied in the temperature range 300–560 K by means of Auger electron spectroscopy (AES), thermal desorption (TD), work function (WF) measurements, and electron energy loss spectroscopy (ELS). The adsorption and WF kinetics at 300 K exhibit a shape different from those observed at higher adsorption temperatures. At 300 K oxygen only removes the empty dangling bond surface state, whereas at higher temperature new loss transitions involving chemically shifted Ge 3d core levels appear. The findings imply that at 300 K only a chemisorption oxygen state exists on the Ge(111) surface whereas the formation of an oxide phase requires higher temperatures. The shapes of the TD curves show that the desorption of GeO follows $\text{1}\text{2}$ order desorption kinetics.     

Adsorption of nitrogen oxide molecules to the surface of nanosized nickel clusters formed on the (111) surface of a magnesium oxide film

The properties of the systems formed on deposition of Ni atoms on the (111) surface of a MgO film of thickness equal to six monomolecular layers grown on a Mo(110) crystal face and the adsorption of NO nitrogen oxide molecules to the system surface have been studied by methods of electron spectroscopy (AES, XPES, LEED, LEIBSS) and reflective infrared absorption spectroscopy. On deposition of Ni atoms on the surface of MgO at a substrate temperature of 600 K, three-dimensional islands of Ni are formed. The subsequent adsorption of NO results in molecule dissociation even at 110 K. The efficiency of this process depends on the morphology of the Ni layer.     

A quantitative ion-scattering study of the Ni(110) surface during the early stages of oxidation

The adsorption of oxygen on clean Ni(110) has been studied at room temperature and at 475 K by Rutherford backscattering, using the effects of channeling and blocking, and lowenergy electron diffraction. At both temperatures successive LEED structures are formed at low oxygen coverage (?0.5 monolayer). With increasing oxygen content stoichiometric NiO is formed on top of the Ni(110) surface, at room temperature as an amorphous layer and at 475 K as patches of crystalline oxide, oriented with the NiO(100) planes parallel to the Ni(110) surface plane. At 475 K the nickel atoms in the interface region between oxide and substrate are displaced over a thickness of less than 2 monolayers. Based on the measurement of the oxide composition as function of coverage we suggest a modification of the island growth model as proposed by Holloway and Hudson for the Ni(100) and (111) surfaces.     

Binding states and decomposition of NO on single crystal planes of Pt

Nitric oxide desorption and reaction kinetics are compared on the (111), (110),and (100) planes of platinum using temperature programmed desorption mass spectrometry. NO exhibits large crystallographic anisotropies with the (100) plane having stronger bonding and much higher decomposition activity than the (110) or (111) planes. The desorption activation energies for the major tightly bound states are 36, 33.5, and 25 kcal mole^?1 on the (100), (110), and (111) planes respectively. Pre-exponential factors for these states on the (110) and (111) planes are 1 × 10^16±0.5s^?1. The major tightly bound state on the (100) plane dissociates to yield 50% N₂ and O₂, but all other states all planes desorb without significant decomposition. The fraction decomposed is less than 2% on the Pt(111) surface.     

Comparison of the CO and D2 oxidation reactions on Pd supported on MgO(100), MgO(110) and MgO(111)

Oxidation of D₂ and CO on oxygen pre-exposed 200 nm thick Pd films, epitaxially grown on MgO(100), MgO(110) and MgO(111), has been investigated in the temperature range 100–300°C. Oxygen initial sticking coefficients have been determined to be close to 1 for the 100 and 110 films, and around 0.8 for the 111 film. The sticking coefficient and reactive sticking coefficient for CO oxidation on Pd/MgO(100) is also close to 1, and the maximum reactive sticking coefficient for hydrogen oxidation is determined to be around 0.9 at temperatures above 200°C. It is shown that the reactivities for the different surfaces vary strongly with surface and oxygen coverage, and the consequence of this for supported particle catalysts is pointed out.     

Surface structures formed upon oxidation of the (311) face of copper

The oxidation of the copper (311) surface at temperatures from 25 to 900° C, and at oxygen pressures from 1 atm to 10⁻⁴ torr has been investigated by reflection high energy electron diffraction (RHEED). At room temperature, a poorly organized three-demensional epitaxial layer of Cu²O initially covers the surface, but it disappears when heated in vacuum to 200 °C. Between 300 and 600 °C, two symmetry-equivalent versions of a (4 × 1) two-dimensional surface structure form. Above 500 °C, this structure transforms into another having a hexagonal primitive cell with one axis coinciding with the Cu [011̄] direction and an axial length of 5.212 Å. This is the same cell which has been observed previously with oxidation of copper (100), (111), and (110) faces above 600 °C. Upon oxidation above 600 °C, the surface decomposes into (111) and (100) facets having the copper [010̄] direction in common.     

Steady state shapes of periodic profiles on (110), (100), and (111) surfaces of nickel

Periodic surface profiles with amplitudes of ≦0.4 μm and periodicities of 4–20 μm were prepared on Ni(110), (100), and (111) single crystal surfaces. These crystals were annealed in ultra-high vacuum (UHV) at 1073–1327 K after they had been cleaned by Ar ion bombardment and investigated by Auger electron spectroscopy. The geometry of the profiles was studied in UHV by laser diffraction and outside the vacuum by interference microscopy. The profiles have sinusoidal shapes on Ni(110) but trapezoidal shapes on both the (100) and (111) surfaces. This type of faceting can be understood on the basis of the anisotropic surface energy of Ni, with cusps at the (100) and (111) orientations. Model calculations show in the case of anisotropic surface energy that periodic profiles develop facets which correspond to the low surface energy orientations (close-packed surfaces).     

Field electron emission study of nitrogen adsorbed on individual tungsten planes

The adsorption of nitrogen on 211, 111, 100 and 110 tungsten planes has been studied by means of the probe-hole emission technique over a wide range of temperatures. The field emission tube was attached to a molecular beam system. This technique enabled deposition of strictly controlled doses of nitrogen. It has been found that on the 211 plane three states of nitrogen γ, α and β exist. In the γ state molecules of opposite polarity are present. These correspond to the γ⁺ and γ^?. The α state undergoes transformation at about 300 K to a more stable β state. β nitrogen leaves the 211 plane through surface diffusion in the temperature region 600–700K. Results obtained on the 111 plane in the low temperature region confirm previous findings on the existence of γ and α states. At higher temperatures the concentration of nitrogen in the β state increases as a result of migration from the 211 plane. There is some evidence as to the existence of two high energetic states of nitrogen on the 111 and 100 planes. On the 110 plane only partial results were obtained due to field desorption.     

Comment on “oscillatory indirect interaction between adsorbed atoms — Non-asymptotic behavior in tight-binding models at realistic parameters” by K.H. Lau and W. Kohn

A sensitive infrared reflectance accessory suitable for the study of surface films on medium size single crystals is described. Oxide films formed on the (100), (110) and (111) crystal faces of aluminum in air, at room temperature, display nearly identical behavior with films approximately 10 Å thick absorbing as a single band near 940 cm^?. After 10⁴ sec at 570 °C, in oxygen, films formed on these crystals begin to display differences in band characteristics and growth kinetics. Between 10⁴ and 4 × 10⁴ sec the rates of growth on the (110) and (111) crystal faces are much greater than on the (100) face. Beyond 4 × 10⁴ sec the growth rate on the (100) face increases while the (110) and (111) growth rates approach zero. Limiting thicknesses reached after 4 × 10⁵ sec approach 3.4 × 10², 2.1 × 10² and 2.2 × 10² Å for (100), (110) and (111) faces, respectively. Oxide compositional differences were reflected by the number and form of the infrared bands after 10⁴ sec of oxidation. After 5 × 10⁴ sec the (100) face oxide was composed of two and possibly three oxide species as evidenced by several bands. Differences in bandwidth and frequency were observed between the (110) and (111) oxide films. The significance of such differences is discussed.     

Flash desorption and equilibration of H2 and D2 on single crystal surfaces of platinum

The adsorption and flash desorption of hydrogen and the equilibration of H₂ and D₂ has been studied on the (110), (211), (111) and (100) planes of platinum. Desorption from Pt (211), a stepped surface composed of (111) and (100) ledges, yields a desorption spectrum which apparently is a composite of desorption from the individual ledges. Pt (110) is quite similar to the tungsten structural analog, W (211), in that both yield two-peak desorption spectra, and on both planes adsorption kinetics are dramatically different for filling of the two states. On all four planes adsorption kinetics are apparently proportional to (1 ? θ)², and estimates of the initial sticking probabilities show them to decrease in the order: (110) > (211) > (100) > (111). Equilibration activity follows approximately the same order [(110) > (211) > (111) > (100)] with a factor of ~ 5 difference between the most and least active planes; no extraordinary activity is observed for the stepped surface, Pt(211). Below ~ 570 K equilibration of H₂ and D₂ is activated by less than 2 kcal/mole with the magnitude dependent on the specific face, and above this temperature the reaction is nonactivated. The non-activated case apparently results from absorption followed by statistical mixing on the surface. Calculated rates for HD production per cm² based on this model are in excellent agreement with the experimental values for Pt(110) and Pt(211), and in somewhat poorer agreement in the case of Pt (111) and Pt (100). This latter is probably due to the greater inaccuracy in the values of the sticking coefficients on these planes.     

Oxidation of low-index FeAl surfaces

The oxidation of the (100), (110) and (111) surfaces of the intermetallic compound FeAl has been investigated using LEED and XPS. On all three surfaces, oxidation at room temperature leads to the formation of an amorphous oxide film on top of an Al-depleted interlayer. The film growth can be divided into two regions of differing kinetics, i.e. the initial formation of a closed oxide film and a subsequent thickening. In the first region, the oxygen-uptake rate varies significantly with surface orientation, while in the thickening regime the uptake is the same for all surfaces. The maximum thickness as well as the composition of the oxide films were found to depend on the initial oxidation rate. At higher oxidation temperatures, ordered oxide films of around 5–8 Å in thickness are formed, very similar to those observed on NiAl. Photoemission spectra from these ordered phases showed evidence for Al atoms in two different chemical environments, i.e. the well-known oxide species in the interior of the film and an additional species present at the oxide/alloy interface.     

Na2O overlayers epitaxially prepared on Pd(100) and structure-sensitive CO2 adsorption

Sodium oxide overlayers prepared on Pd(100) were examined with AES, LEED and XPS. The oxides were grown by cycles of Na deposition followed by oxidation, maintaining the composition of Na₂O. The surface structure of the deposited oxide was sensitive to the annealing temperature after oxidation. The Na₂O/Pd(100) surfaces gave rise to a (3 × 3) LEED pattern when annealed at 600 K under vacuum. A model based on Na₂O(100) was proposed for the (3 × 3) overlayers, where the oxide was epitaxially aligned in a square periodicity on the substrate. Multilayered Na₂O was prepared maintaining the (3 × 3) pattern, by repeated cycles of preparation. Annealing at 700 K caused a c(4 × 6) pattern, for which a model based on Na₂O(110) was proposed. CO₂ was adsorbed on the (3 × 3) oxide of various thickness to form carbonate at 350 K, whereas the c(4 × 6) oxide was inert. The relationship of structure and reactivity is discussed in relation to the microscopic design of metal-oxide surfaces for base-catalysis.     

AES and LEED studies of xenon adsorption on (100)NaCl

The thermal and electro impact behaviour of NO adsorbed on Pt(111) and Pt(110) have been studied by LEED, Auger spectroscopy, and thermal desorption. NO was found to adsorb non-dissociatively and with very similar low coverage adsorption enthalpies on the two surfaces at 300 K. In both cases, heating the adlayer resulted in partial dissociation and led to the appearance of N₂ and O₂ in the desorption spectra. The (111) surface was found to be significantly more active in inducing the thermal dissociation of NO, and on this surface the molecule was also rapidly desorbed and dissociated under electron impact. Cross sections for these processes were obtained, together with the desorption cross section for atomically bound N formed by dissociation of adsorbed NO. Electron impact effects were found to be much less important on the (110) surface. The results are considered in relation to those already obtained by Ertl et al. for NO adsorption on Ni(111) and Pd(111), and in particular, the unusual desorption kinetics of N₂ production are considered explicitly. Where appropriate, comparisons are made with the behaviour of CO on Pt(111) and Pt(110), and the adsorption kinetics of NO on the (110) surface have been examined.     

Hydrogen diffusion in the elastic fields of dislocations in iron

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10¹⁴ m^–2 in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉{110}, 〈111〉{112}, 〈100〉{100}, and 〈100〉{110} are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.     

Oxygen adsorption and oxide formation on Cr(100) and Cr(110) surfaces

The adsorption of oxygen on (100) and (110) clean chromium surfaces was studied by electron diffraction (LEED and RHEED) and scanning microscopy. The beginning of the oxidation process was investigated using LEED technique. The successive patterns, observed with increasing oxidizing atmosphere, allow us to propose an oxidation mechanism for these chromium surfaces. For both orientations, rhombohedral chromium oxide grows on the surface, as shown by RHEED diagrams. The behaviour of the two planes is markedly different: the oxide film is polycrystalline on the (100) surface, while the pseudo six-fold symmetry of the (110) plane permits a parallel oriented growth.     

The initial oxidation of molybdenum: IV. Epitaxial growth of oxide on molybdenum

The oxide which grows in low oxygen pressure and at temperatures between 700 and 1000 K on molybdenum is shown to be MoO₂. The epitaxial relationships between the oxide and the metal (100), (110) and (111) surfaces are given. The epitaxial relationships of oxide on the molybdenum (100) and (110) surfaces are geometrically equivalent. The oxide grows on the (111) molybdenum surface with no major oxide plane parallel to the substrate. It is suggested that the epitaxy of MoO₂ on the (111) surface is a consequence of growth on {211} molybdenum facets. The atomic positions in the pairs of interfacial planes found are given. There is little agreement between the positions of ions in the oxide and substrate lattice sites. Only in the postulated case of MoO₂ on {211} Mo facets is a small misfit found.