Magnetic phase transition in Co/Cu/Ni/Cu(100) and Co/Fe/Ni/Cu(100)

Magnetic phase transitions in coupled magnetic sandwiches of Cu/Co/Cu/Ni/Cu(100) and Cu/Co/Fe/Ni/Cu(100) are investigated by photoemission electron microscopy. Element-specific magnetic domains are taken at room temperature to reveal the critical thickness at which the magnetic phase transition occurs. The results show that a coupled magnetic sandwich undergoes three types of magnetic phase transitions depending on the two ferromagnetic films' thickness. A phase diagram is constructed and explained in the process of constructing Monte Carlo simulations, which corroborate the experimental results.     

Magnetic bubble domain phase at the spin reorientation transition of ultrathin Fe/Ni/Cu(001) film

Magnetic domain phases of ultrathin Fe/Ni/Cu(001) are studied using photoemission electron microscopy at the spin reorientation transition (SRT). We observe a new magnetic phase of bubble domains within a narrow SRT region after applying a nearly in-plane magnetic field pulse to the sample. By applying the magnetic field pulse along different directions, we find that the bubble domain phase exists only if the magnetic field direction is less than approximately 10 degrees relative to the sample surface. A temperature dependent measurement shows that the bubble domain phase becomes unstable above 370 K.     

Angular dependence of the in-plane magnetization of (100) Cu/Ni/Cu structures

(100) Cu/Ni/Cu sandwich structures have been deposited on (100) Si using the (100) Cu epitaxially grown as the seed layer. The in-plane epitaxial relation between the metal films and Si allows the study of angular dependence of the magnetization for the field parallel to the film plane. Keeping the Cu layers at 1000 Å each and varying the Ni layers between 50 and 1000 Å, the magnetization along the [110] edge is larger than that along the [100] one. This is observed for both structures with a Ni thickness of 1000 and 500 Å, respectively. For the thinner Ni layers, the angular dependence is interfered by the reversal in magnetic anisotropy reported earlier. For such structures, a squared hysteresis loop is observed for the field perpendicular to the film plane, whereas one with little loop is observed for the in-plane magnetization. The angular dependence observed for the 1000 and 500 Å Ni films is the same as that of single crystal Ni. The (100) Cu/Ni/Cu films thus grown can be used for other magnetic measurements in the exploration of two-dimensional magnetism with controlled orientations.     

On the order-disorder transition of chemisorbed H on Ni (111)

The order-disorder transition of chemisorbed H on Ni (111) has been analyzed by Kittler and Bennemann in terms of the lattice gas model. The main purpose of this paper is to refine the above calculation. The expression with regard to adlayer domains is given for the half-order LEED spot intensity, from which the dependence of the transition temperature and of the LEED spot intensity on H-coverages is calculated. In particular, the H-coverage dependence of the transition-temperature T_c and the LEED intensity I for θ? 0.25 is restudied. We present results obtained by using only pair interactions between the H-atoms and no 3H-interactions. It is shown that the observed asymmetric phase diagram with respect to H-coverages can result from the two kinds of pair interactions between chemisorbed H atoms.     

On the order-disorder transition of chemisorbed H on Ni (111)

The recently observed order-disorder transition of chemisorbed H on Ni(111) is analyzed in terms of the cluster-variation method including not only H-pair interactions but also interactions between 3 chemisorbed H-atoms. The dependence of the transition temperature, the LEED intensity spots and the H-binding energy on H-coverage has been calculated. It is shown that the observed asymmetric phase-diagram with respect to H-coverage can result from interactions between 3 H-atoms.     

Local adsorption sites and bondlength changes in Ni(1 0 0)/H/CO and Ni(1 0 0)/CO

The local adsorption geometry of CO adsorbed in different states on Ni(1 0 0) and on Ni(1 0 0) precovered with atomic hydrogen has been determined by C 1s (and O 1s) scanned-energy mode photoelectron diffraction, using the photoelectron binding energy changes to characterise the different states. The results confirm previous spectroscopic assignments of local atop and bridge sites both with and without coadsorbed hydrogen. The measured Ni–C bondlengths for the Ni(1 0 0)/CO states show an increase of 0.16 ± 0.04 Å in going from atop to bridge sites, while comparison with similar results for Ni(1 1 1)/CO for threefold coordinated adsorption sites show a further lengthening of the bond by 0.05 ± 0.04 Å. These changes in the Ni–CO chemisorption bondlength with bond order (for approximately constant adsorption energy) are consistent with the standard Pauling rules. However, comparison of CO adsorbed in the atop geometry with and without coadsorbed hydrogen shows that the coadsorption increases the Ni–C bondlength by only 0.06 ± 0.04 Å, despite the decrease in adsorption energy of a factor of 2 or more. This result is also reproduced by density functional theory slab calculations. The results of both the experiments and the density functional theory calculations show that CO adsorption onto the Ni(1 0 0)/H surface is accompanied by significant structural modification; the low desorption energy may then be attributed to the energy cost of this restructuring rather than weak local bonding.     

Spin-pumping-enhanced magnetic damping in ultrathin Cu(0 0 1)/Co/Cu and Cu(0 0 1)/Ni/Cu films

The influence of the Cu capping layer thickness on the spin pumping effect in ultrathin epitaxial Co and Ni films on Cu(0 0 1) was investigated by in situ ultrahigh vacuum ferromagnetic resonance. A pronounced increase in the linewidth is observed at the onset of spin pumping for capping layer thicknesses d_Cu larger than 5 ML, saturating at d_Cu = 20 ML for both systems. The spin mixing conductance for Co/Cu and Ni/Cu interfaces was evaluated.     

On the Auger-photoelectron coincidence spectroscopy spectra of Cu(100), Cu metal and CuOx/Cu surface

The M₃–VV Auger-photoelectron coincidence spectroscopy (APECS) spectrum of Cu(100) and the L₃–VV APECS spectra of Cu metal and CuOx/Cu surface are analyzed in detail. The narrowing and energy shift of the photoelectron line in the M₃–VV APECS spectrum is well predicted by the present theory. The spectrum shows the presence of the M₂–M₃(V)–VV(V) decay in which a hole in the 4s band hops away prior to the decay of M₃ hole. The analysis of the L₃ photoelectron spectra of Cu metal measured in coincidence with the ³F or ¹G Auger line raises a question concerning the presence of two different core–hole states upon the L₃ level ionization recently proposed by Thurgate and Jiang [Surf. Sci. 466 (2000) L807]. The analysis of the L₃–VV APECS spectrum of CuOx/Cu shows that the final-state charge–transfer interaction plays an important role in CuO.     

Magnetic hyperfine fields in ultrathin Ni films on Cu(100)

The magnetic hyperfine field was measured at ¹¹¹In(¹¹¹Cd) probe atoms in ultrathin Ni films epitaxially grown on Cu(100) utilizing the perturbed -angular correlation (PAC) method. The behaviour of the hyperfine field as a function of temperature was studied for different film thicknesses ranging from 2 up to 10 monolayers. It was found that the strength of the hyperfine fields as well as the critical temperatures are strongly reduced for thin nickel films and approach the bulk value with increasing film thickness. The orientation of the hyperfine field is discussed.     

Chemical and physical properties in layers and interfaces of nanolayered Si(100)/Ni/BCxNy stacks

Layered stacks of the structure Si(100)/Ni/BC_xN_y were produced by physical (Ni) and chemical (BCN) vapor deposition. The BCN layers were deposited at temperatures of 200, 300, 400, and 500 °C. The resulting samples were characterized by ellipsometry, X‐ray photoelectron spectrometry, secondary ion mass spectrometry, atomic force microscopy, and X‐ray reflectometry. The formed structures of the samples synthesized at 200 and 500 °C, respectively, were determined. For the synthesis temperature of 200 °C, compounds with Ni–C bonds were found at the interface Ni/BC_xN_y. For the sample produced at 500 °C, compounds with Ni–Si bonds were identified, dispersed as particles or droplets in the corresponding interface. Copyright © 2015 John Wiley & Sons, Ltd.     

Spin reorientation transition in single-domain

We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in results in a spin reorientation transition and an anisotropic ac susceptibility which is fully consistent with a simple single-domain model. The uniaxial and biaxial anisotropy constants vary, respectively, as the square and fourth power of the spontaneous magnetization across the whole temperature range up to . The weakening of the anisotropy at the transition may be of technological importance for applications involving thermally assisted magnetization switching.     

Search for ferromagnetism in ultrathin epitaxial films: Cr/Au(100), Cr/Cu(100), and Fe/Cu(100)

The surface magneto-optic Kerr effect (SMOKE) technique was used to search for ferromagnetism in monolayer-range films of Cr and Fe grown on Au(100) and Cu(100). The growth modes were characterized using low energy electron diffraction (LEED) and Auger electron spectroscopy. The fcc structure of Cr could not be stabilized on Cu(100). Ferromagnetism was not observed for the Cr/Au(100) films at temperature above 100 K. Ferromagnetism also was not observed for fcc Fe/Cu(100) grown at room temperature; but for growth at >150°C, a ferromagnetic, metastable state was observed for the top layer of the Fe film, in the absence of bulk ferromagnetism. The ferromagnetic Fe/Au(100) system was used to establish the sensitivity of the approach.     

Influence of the semiconductor/metal rear contact on the performance of n(a-Si:H)/i(a-Si:H)/p(c-Si) heterojunction solar cells

The aim of this work is to analyze on the results of using of Al/Ag layer as a rear contact to improve the performance of heterojunction silicon solar cells. An analytical method is presented to extract the physical parameters of the equivalent circuit. These parameters are extracted to simulate the I(V) characteristic of heterojunction silicon solar cells, with Al and Al/Ag rear-metal contact. A good agreement between our analytical method and experimental measurement of electrical characteristics is obtained which show clearly how the Al/Ag rear contact can improve the characteristics of silicon solar cells. The influence of the rear-metal contact on the performance of the c-Si(p)-based bifacial HIT solar cell, i.e., the ZnO/Al/a-Si:H(n)/a-Si:H(i)/c-Si(p)/metal solar cell, is investigated in detail by computer simulation using the AFORS-HET software. Accordingly, the design optimization of the bifacial HIT solar cells on c-Si(p) substrates is provided. These simulation show an optimal conversion efficiency of 23% when the rear-metal contact is perfectly ohmic.     

Magnetron sputtering of thin Cu(200) films on Ni(200)/SiO2/Si substrates

The possibility of oriented growth of thin copper films with a (200) texture on a SiO₂/Si substrate by magnetron sputtering in medium vacuum is demonstrated for the case when a predeposited nickel layer with a (200) texture serves as an orienting sublayer.