Effects of heavy-ion irradiation on the electrical properties of rf-sputtered HfO2 thin films for advanced CMOS devices

HfO₂-based metal-oxide semiconductor (MOS) capacitors were irradiated with high-energy ion beam to study the irradiation effects in these films. HfO₂ thin films deposited by radio frequency (rf)-sputtering were irradiated with 80 MeV O⁶⁺ ions. The samples were irradiated and characterized at room temperature. Devices were characterized via 1 MHz capacitance–voltage (C?V) measurements using the midgap method. The irradiation induced dispersion in accumulation and depletion regions with increasing fluence is observed. After irradiation, the midgap voltage shift (Δ V _mg) of?0.61 to?1.92 V, flat band voltage shift (Δ V _fb) of?0.48 to?2.88 V and threshold voltage shift (Δ V _th) of?0.966 to?1.96 V were observed. The change in interface trap charge and oxide trap charge densities after 80 MeV O⁶⁺ ions irradiation with fluences were determined from the midgap to flat band stretch out of C?V curves. The results are reported and explained in terms of changes in microstructure and dielectric properties of the HfO₂ thin films after irradiation.     

Characterization of yttrium-doped ceria with various yttrium concentrations as cathode interlayers of SOFCs

This study focuses on enhancing the efficiency of solid oxide fuel cells (SOFCs) by modulating the thickness of the highly resistive solid solution layer of (Ce,Zr)O₂ formed between the yttria-stabilized zirconia (YSZ) electrolyte and the CeO₂-based interlayer on the cathode side. The effects of the concentration of dopant in CeO₂ on the thickness of the solid solution were analyzed. Yttrium-doped CeO₂ (YDC) interlayers were studied, with dopant concentrations in the range of 5–40 mol%. The results revealed that the thickness of the solid solution decreased with increasing dopant concentration up to 20 mol% and then saturated at higher dopant concentrations. In addition, the electrical conductivities of yttrium-doped ceria (YDC) and the solid solution of YSZ and YDC were measured. YDC with a dopant concentration of 20 mol% exhibited the highest conductivity. The conductivities of the YSZ/YDC solid solution decreased compared to those of YDC and YSZ for each dopant concentration, and the extent of the reductions was approximately the same for all dopant concentrations. These results indicate that a dopant concentration of 20 mol% is optimal to minimize the internal resistance of SOFCs when YDC is used as the interlayer material.     

Physical,optical and electrical properties of calcium bismuth borate glasses

The variation in physical, optical and electrical properties has been investigated as a function of Bi₂O₃ content in 20CaO?·?xBi₂O₃?·?(80???x)B₂O₃ (0?≤?x?≤?60, in mol%) glasses. The samples were prepared by normal melt-quenching process, and the optical absorption and reflection spectra were recorded in the wavelength range of 400–950 nm. The fundamental absorption edge has been identified from the optical absorption spectra. The optical band gap, E _g, for indirect allowed and indirect forbidden transitions has been determined from the available theories and its value lies between 1.80–2.37 eV and 1.08–2.19 eV, respectively. The theoretical fitting of the optical absorption indicates that the present glass system behaves as an indirect gap semiconductor. The origin of the Urbach energy, ΔE, has been associated with the phonon-assisted indirect transitions. The refractive index and optical dielectric constant have been evaluated from the reflection spectra. The density and molar volume are found to depend on the molar concentration of Bi₂O₃. The values of DC electrical conductivity have been measured from 373 to 623 K and the activation energy has been calculated. Theoretical optical basicity has been reported as a function of the Bi₂O₃ content. The variations have been discussed in terms of structural changes.     

Influence of different oxidants on band alignment of HfO2 films deposited by atomic layer deposition

Based on X-ray photoelectron spectroscopy (XPS), influences of different oxidants on band alignment of HfO₂ films deposited by atomic layer deposition (ALD) are investigated in this paper. The measured valence band offset (VBO) value for H₂O-based HfO₂ increases from 3.17 eV to 3.32 eV after annealing, whereas the VBO value for O₃-based HfO₂ decreases from 3.57 eV to 3.46 eV. The research results indicate that the silicate layer changes in different ways for H₂O-based and O₃-based HfO₂ films after annealing process, which plays a key role in generating the internal electric field formed by the dipoles. The variations of the dipoles at the interface between the HfO₂ and SiO₂ after annealing may lead the VBO values of H₂O-based and O₃-based HfO₂ to vary in different ways, which is in agreement with the varition of flat band (V_FB) voltage.     

Volume of precursor solution effect on the properties of SnO<Subscript>2</Subscript> thin films prepared by nebulized spray pyrolysis technique

Undoped SnO₂ thin films have been deposited on amorphous glass substrates with different precursor solution volume (10, 15, 20 and 25 ml) using simple and cost-effective nebulized spray pyrolysis technique. The influence of precursor solution on structural, optical, photoluminescence and electrical properties had been studied. The X-ray diffraction spectra prove the polycrystalline nature of SnO₂ with tetragonal structure. All the films show a preferred growth orientation along (110) diffraction plane. The average transmittance of SnO₂ thin films varied between 82 and 75% in the visible as well as IR region. The band gap energy decreases from 3.74 to 3.64 eV corresponding to direct transitions with the precursor solution volume had increased from 10 to 20 ml and then increased as 3.72 eV for 25 ml. SEM pictures demonstrated polyhedrons like grains. EDX confirmed the existence of Sn and O elements in all the prepared SnO₂ thin films. Photoluminescence spectra at room temperature revealed that the four emission bands in all the samples such as sharp dominant peak at 361 nm with shoulder peak at 377 nm (UV region), a broad and low intensity peak at 492 nm (blue region) and 519 nm (green region). The electrical parameters were examined by Hall effect measurements, which demonstrated that the film prepared at 20 ml precursor solution volume possess minimum resistivity 2.76?×?10^?3 Ω-cm with activation energy 0.10 eV and maximum figure of merit 1.54?×?10^?2 (Ω/sq)^?1.     

Computer modelling of ion migration in zirconia

Defect structure and migration pathways of cations in cubic zirconia (ZrO₂) have been calculated using two computer modelling techniques. The first is based on the Mott–Littleton method, which considers defects to be embedded in an otherwise perfect crystal, and the second is the supercell approach, which allows finite defect concentrations to be modelled. Using the first approach, migration pathways for both intrinsic and dopant cations have been calculated. Activation energies ranging from 3.1 to 5.8?eV have been calculated assuming a vacancy mechanism. For highly charged dopants a curved pathway was found to be favoured over a straight pathway. The effect of stabilizer concentration on the properties of the system investigated has been analysed using the supercell method; 3 × 3 × 3 and 4 × 4 × 4 supercells containing 3–40?mol% calcia (CaO) or yttria (Y₂O₃) have been constructed assuming a random distribution of both dopant cations and oxygen vacancies. After relaxation the oxygen vacancies were found to be located adjacent to the zirconium cations in the CaO-doped system, while remaining randomly ordered in the Y₂O₃-doped system. Also cation vacancies were created, and after relaxation they were surrounded in all systems (CaO-stabilized ZrO₂ and Y₂O₃-stabilized ZrO₂) on average by 2.7 oxygen vacancies.     

Formation of fast ion-conducting materials in BiI3–Ag2CrO4 binary system

Fast ionic solid specimens of a new binary system namely (BiI₃) _x –(Ag₂CrO₄)_100?x , where x?=?10, 20, 30, 40, 50, 60, 70, 80, and 90 mol%, were synthesized by melt quenching method. Detailed structural, thermal, and electrical transport properties evaluated by means of X-ray diffraction analysis, Fourier transform infrared spectroscopic investigations, and differential scanning calorimetry in conjunction with complex impedance analysis carried out over the frequency range 1 MHz–20 Hz and in the temperature region 298–430 K indicated the composite nature of such superionic solids consisting of glassy and crystalline phases and possessing electrical conductivities of the order 10^?6–10^?3 Scm^?1 at 298 K. The best conducting composition of the present binary system has been identified as the specimen containing 30 mol% BiI₃ and exhibiting a room-temperature electrical conductivity of 7.1?×?10^?3 Scm^?1 with an activation energy of 0.12 eV for silver ionic transport as confirmed by Wagner's polarization and E.M.F. techniques.     

The Fe–Fe2P phase diagram at 6 GPa

Here, we report experimental results on melting and subsolidus phase relations in the Fe–Fe₂P system at 6?GPa and 900–1600°C. The system has two P-bearing compounds: Fe₃P and Fe₂P. X-ray diffraction patterns of these compounds correspond to schreibersite and barringerite, respectively. The Fe–Fe₃P eutectic appears at 1075°C and 16?mol% P. Schreibersite (Fe₃P) melts incongruently at 1250°C to produce barringerite (Fe₂P) and liquid containing 23?mol% P. Barringerite (Fe₂P) melts congruently at 1575°C. Maximum solid solution of P in metallic iron at 6?GPa is 5?mol%. As temperature increases to 1600°C, the P solubility in the metallic iron decreases to 0.5?mol%, whereas the P content in coexisting liquid decreases to 3?mol%. The composition of quenched phases from Fe–P melt coincides with the compositions of equilibrium phases at corresponding temperature. Consequently, the composition of quenched products of Fe-P melts in meteorites can be used for reconstruction of P–T conditions of their crystallization under ambient or low pressures or during shock melting by impact collisions.     

Effect of sputtering pressure on structural and optical properties of silver oxide thin films; Kramers–Kronig method

Silver oxide nano layers were prepared by RF magnetron sputtering on amorphous SiO₂ substrates. O₂ pressure in chamber was varied from 1 to 4 and 7 mTorr during growth process. The effects of different O₂ pressure on structural, morphological and optical properties of the films were investigated by means of X-ray diffraction, scanning electron microscopy, atomic force microscopy and UV–Vis spectroscopy analyses. Optical reflectance measured in the wavelength of 350–950 nm by spectroscopy. Other optical properties and optical band gaps were calculated using Kramers–Kronig relations. The X-ray diffraction measurements showed change in crystalline structure with increasing O₂ pressure. Preferred orientation has been changed to another growth orientation at 4 mTorr O₂ pressure. The Atomic force microscope images showed increasing in roughness consistently by increasing oxygen pressure. The thickness of the thin films decreases (from 217 to 180 nm) with increasing O₂ pressure. Optical results revealed that the highest optical band gap of 3.1 eV and the highest transmittance of?~?80% were achieved at lower O₂ pressure (1 mTorr).     

Structural and electrical properties of lithium manganese oxide thin films grown by pulsed laser deposition

LiMn₂O₄ thin films were deposited by reactive pulsed laser deposition technique and studied the microstructural and electrical properties of the films. The LiMn₂O₄ thin films deposited in an oxygen partial pressure of 100 mTorr and at a substrate temperature of 573 K from a lithium rich target were found to be nearly stoichiometric. The films exhibited predominantly (111) orientation representing the cubic spinel structure with Fd3m symmetry. The intensity of (111) peak increased and a slight shift in the peak position was observed with the increase of substrate temperature. The lattice parameter increased from 8.117 to 8.2417 Å with the increase of substrate temperature from 573 to 873 K. The electrical conductivity of the films is observed to be a strong function of temperature. The evaluated activation energy for the films deposited at 873 K is 0.64 eV.     

Phase stability,thermal, electrical and structural properties of (Bi2O3)1−x−y(Sm2O3)x(CeO2)y electrolytes for solid oxide fuel cells

In this study, (Bi₂O₃)_1?x?y(Sm₂O₃)_x(CeO₂)_y ternary system was synthesized by using solid-state reaction method. Structural, morphological, thermal and electrical properties of the samples were evaluated by means of X-ray diffraction (XRD), scanning electron microscopy, thermo gravimetry/differential thermal analyzer and four-probe method. The XRD measurement results indicated that the samples (x = 10–15, y = 5–10–15–20) had cubic δ-phase crystallographic structure. The phase stability of the samples was checked by the differential thermal analyzer measurements, which indicates most of the samples have stable δ-Bi₂O₃ phase. The electrical conductivity measurement results showed that the electrical conductivity increased with mol% CeO₂ molar ratio at a fixed molar ratio of Sm₂O₃. The highest electrical conductivity obtained for the (Bi₂O₃)_0.65(Sm₂O₃)_0.15(CeO₂)_0.20 system was 1.55 × 10^?2 (Ω.cm)^?1 at 600 °C. The activation energies were also calculated at low temperature range (350–650 °C) which vary from 1.1325 to 1.4460 eV and at high temperature (above 650 °C) which vary from 0.4813 to 1.1071 eV.     

PVA-assisted synthesis and characterization of nano-crystalline La3+ and Mg2+ co-doped CeO2 electrolyte for intermediate-temperature solid oxide fuel cells

A series of nano-crystalline ceria-based solid solution electrolyte, Ce_0.8La_0.2?x Mg_xO_2?δ (x?=?0.0, 0.05, 0.10, 0.15, and 0.2), were synthesized via the polyvinyl alcohol (PVA) assisted combustion method, and then characterized to the crystalline structure, powder morphology, sintering micro-structure, and electrical properties. Present study showed that Ce_0.8La_0.2?x Mg _x O_2?δ was exceedingly stable as a cubic phase in all temperature range and exhibited fine crystals ranging from 15 to 20 nm. After sintering at 1,400 °C, the as-prepared pellets exhibited a dense micro-structure with 96 % of theoretical density. The electrical conductivity was studied using AC impedance spectroscopy and it was observed that the composition Ce_0.8La_0.1?Mg_0.1O_2?δ showed higher electrical conductivity of 0.020 S?cm^?1 at 700 °C. The thermal expansion was measured using dilatometer technique in the temperature range 30–1,000 °C. The average thermal expansion coefficient of Ce_0.8La_0.1?Mg_0.1O_2?δ was 12.37?×?10^?6 K^?1, which was higher than that of the commonly used SOFC electrolyte YSZ (~10.8?×?10^?6 K^?1).     

Short-Range Order in Amorphous and Crystalline Ferroelectric Hf<Subscript>0.5</Subscript>Zr<Subscript>0.5</Subscript>O<Subscript>2</Subscript>

The microstructures of amorphous and polycrystalline ferroelectric Hf_0.5Zr_0.5O₂ films are studied by X-ray spectroscopy and ellipsometry. EXAFS spectra demonstrate that the amorphous film consists of an “incompletely mixed” solid solution of metallic oxides HfO₂ and ZrO₂. After rapid thermal annealing, the mixed Hf_0.5Zr_0.5O₂ oxide films have a more ordered polycrystalline structure, and individual Hf and Zr monoxide islands are formed in the films. These islands are several nanometers in size and have a structure that is similar to the monoclinic structure of HfO₂ and ZrO₂. The presence of the HfO₂ and ZrO₂ phases in the Hf_0.5Zr_0.5O₂ films is also detected by ellipsometry.     

Poly (ethylene oxide) (PEO)-based,sodium ion-conducting‚ solid polymer electrolyte films,dispersed with Al<Subscript>2</Subscript>O<Subscript>3</Subscript> filler,for applications in sodium ion cells

The studies on solid polymer electrolyte (SPE) films with high ionic conductivity suitable for the realization of all solid-state Na-ion cells? form the focal theme of the work presented in this paper. The SPE films are obtained by the solution casting technique using the blend solution of poly (ethylene oxide) (PEO) with ethylene carbonate (EC) and propylene carbonate (PC) and complexed with sodium nitrate. Structural and thermal studies of SPE films are done by XRD, FTIR spectroscopy, and TGA techniques. Surface morphology of the films is studied using the FESEM. The ionic conductivity of SPE films is determined from the electrochemical impedance spectroscopy studies. For the SPE film with 16 wt% of NaNO₃ used for reacting with the polymer blend of PEO with EC and PC, the ionic conductivity obtained is around 1.08 × 10^?5 S cm^?1. Addition of the Al₂O₃ as the filler material is found to enhance the ionic conductivity of the SPE films. The studies on the Al₂O₃ modified SPE film show an ionic conductivity of 1.86 × 10^–4 S cm^?1, which is one order higher than that of the SPE films without the filler content. For the SPE film dispersed with 8 wt% of Al₂O₃, the total ion transport number observed is around 0.9895, which is quite impressive from the perspective of the applications in electrochemical energy storage devices. From the cyclic voltammetry studies, a wide electrochemical stability window up to 4 V is observed, which further emphasizes the commendable electrochemical behavior of these SPE films.     

Optical and structural properties of thin films deposited from laser fused Zirconia,Hafnia, and Yttria

The optical and structural properties of films deposited from laser sintered Zirconia (ZrO₂), Hafnia (HfO₂), and Yttria (Y₂O₃) and from the commercially available (unprocessed material) Zirconia, Hafnia and Yttria, were studied and compared. All the films had low absorption. Films deposited from the laser sintered material had very low optical inhomogeneity. ZrO₂ films showed negative inhomogeneity for films deposited from the unprocessed material. The refractive index increased for ZrO₂ films deposited from the laser sintered material. HfO₂ and Y₂O₃ films showed positive inhomogeneity when deposited from the unprocessed material. The refractive index of the films of these materials decreased when deposited from the laser sintered material. The thin films of ZrO₂ and Y₂O₃ prepared from laser sintered material had stable monoclinic and cubic structures respectively while HfO₂ films were found to be amorphous.     

Investigation of thermal annealing effects on microstructural and optical properties of HfO2 thin films

In the present paper, we investigate the effect of thermal annealing on optical and microstructural properties of HfO₂ thin films (from 20 to 190 nm) obtained by plasma ion assisted deposition (PIAD). After deposition, the HfO₂ films were annealed in N₂ ambient for 3 h at 300, 350, 450, 500 and 750 °C. Several characterisation techniques including X-ray reflectometry (XRR), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), UV Raman and FTIR were used for the physical characterisation of the as-deposited and annealed HfO₂ thin films. The results indicate that as-deposited PIAD HfO₂ films are mainly amorphous and a transition to a crystalline phase occurs at a temperature higher than 450 °C depending on the layer thickness. The crystalline grains consist of cubic and monoclinic phases already classified in literature but this work provides the first evidence of amorphous-cubic phase transition at a temperature as low as 500 °C. According to SE, XRR and FTIR results, an increase in the interfacial layer thickness can be observed only for high temperature annealing. The SE results show that the amorphous phase of HfO₂ (in 20 nm thick samples) has an optical bandgap of 5.51 eV. Following its transition to a crystalline phase upon annealing at 750 °C, the optical bandgap increases to 5.85 eV.     

Characterization of blend polymer PVA-PVP complexed with ammonium thiocyanate

Thin films of blend polymer electrolytes comprising poly(vinyl alcohol) (PVA) and poly(vinyl pyrrolidone) (PVP) complexed with ammonium thiocyanate (NH₄SCN) salt in different compositions have been prepared by solution casting technique using distilled water as solvent. The prepared films have been investigated by different experimental techniques. The complexation of these films has been studied by FTIR spectroscopy. The increase in amorphousness of the films with increase in NH₄SCN content has been confirmed by XRD analysis. The addition of ammonium thiocyanate salt to PVA-PVP polymer blend shows a shift in T_g of the blend. The effect of salt concentration and temperature on the ionic conductivity of the polymer blend films has been analyzed using AC impedance spectroscopy. The maximum conductivity of 6.85 × 10^?4 S cm^?1 at room temperature has been observed for the blend with 50 mol% PVA-50 mol% PVP complexed with 40 mol% NH₄SCN. The activation energy has been found to be minimum (0.24 eV) for this sample. Wagner’s polarization technique shows that the charge transport in these blend films is predominantly due to ions. Using the highest conductivity blend polymer electrolyte, a proton battery has been fabricated and its discharge characteristics have been studied.     

Raman and X‐ray investigations of the incorporation of Ca2+ and Cd2+ in the ZrO2 structure

The formation of solid solution and ZrO₂ phase stabilization were investigated by Raman spectroscopy and X‐ray diffraction (XRD) in calcium‐containing and cadmium‐containing zirconium oxide samples heated at 1073 K in air. The adopted preparation procedure led to the incorporation of calcium and cadmium in solid solution into the zirconia structure. The solid solution favored the tetragonal and cubic zirconia phases at the expense of the thermodynamically stable monoclinic modification. Combined macro‐ and micro‐Raman spectroscopy disclosed that instead of forming a homogeneous phase t″, intermediate between the tetragonal t′ and the cubic phase, the tetragonal and cubic phases coexisted in the range 9.49–13.89 mol% for Ca and 11.88–17.23 mol% for Cd. At higher dopant contents the cubic form stabilized. The impurity content necessary to stabilize the high‐symmetry phases was defined. Copyright © 2007 John Wiley & Sons, Ltd.     

Infrared optical properties of Mn1.56Co0.96Ni0.48O4 thin films prepared by chemical solution deposition

～2 μm thick Mn_1.56Co_0.96Ni_0.48O₄ (MCN) films have been prepared on a Al₂O₃ substrate by the chemical solution deposition method. X-ray diffraction and microstructure analyses show good crystallization and the thickness of the films is 2.12 μm. Mid-infrared optical properties of MCN films have been investigated using transmission spectra and infrared spectroscopic ellipsometry. The optical band gap of the MCN film has been derived to be 0.64 eV by assuming a direct transition between valence and conduction bands. The optical constants and thickness of the thin films have been obtained by fitting the measured ellipsometric parameter data with the classical infrared model. The refractive index n of the MCN films decreases as the wavelength increases, but the extinction coefficient k monotonously increases in the wavelength range of 2–7 μm. The maximal n value is 2.63, and the maximal k value is only 0.024. The above results are instructive for the applications of MCN films in infrared detecting.     

Studies of some physical properties of PrFe0.7Ni0.3O3 thin films after 200 MeV Ag15+ irradiation

PrFe_0.7Ni_0.3O₃ thin films (thickness ~ 200 nm) were prepared by pulsed laser ablation technique on LaAlO₃ substrate. These films were irradiated with 200?MeV Ag¹⁵⁺ ions at various fluencies, ranging from 1 × 10¹¹ to 1 × 10¹² ions/cm². These irradiated thin films were characterized by using X-ray diffraction, dc conductivity, dc magnetization and atomic force microscopy. These films exhibit orthorhombic structure and retain it even after irradiations. The crystallite size (110–137?nm), micro strain (1.48 × 10^?2–1.75 × 10^?2 line^?2?m^?4) and dislocation density (79.7 × 10¹⁴–53.2 × 10¹⁴ line/m²) vary with ion fluencies. An enhancement in resistivity at certain fluence and then a decrease in its value (0.22175–0.21813?Ω?cm) are seen. A drastic change in observed magnetism after ion irradiation is seen. With ion irradiation, an increase in surface roughness, due to the formation of hillocks and other factors, is observed. Destruction of magnetic domains after irradiation can also be visualized with magnetic force microscopy and is in close agreement with magnetization data. The impact on various physical properties in these thin films after irradiation indicates a distortion in the lattice structure and consequently on single-particle band width caused by stress-induced defects.