Rates of change in high temperature electrical resistivity and oxygen diffusion coefficient in Ba2YCu3Ox

The change in electrical resistance with time for bulk, thick-film, and thin-film Ba₂YCu₃O_x at atmospheric pressure is described as a function of the oxygen partial pressure (100 to 0.001%) and temperature (320°–750°C). The potential usefulness of these materials as oxygen sensors is demonstrated. The rate of equilibration is faster during oxygen uptake than during its loss. Time constants to reach equilibration (1/e remaining), qualitatively scale with sample dimensions. For a 1m film at 600° C, <1 s for the range of P_O2 (O2 being a shorthand for O₂) from 100% to 0.001%. The rate increases markedly with increasing P_O2. The actual resistance decreases with P_O2 at a rate of log/log P_O2 = 0.4 at 700° C showing adequate sensitivity for sensor purposes. Times for the transient resistance change in the sample where used to estimate the oxygen diffusion coefficient in the ceramic. The diffusivities obtained are 4·10^–11–1·10^–12 cm²/s in the 435°–320° C range, with an activation energy of 27 kcal/mole.     

The Debye-Waller factor and the diffusion process for hydrogen in Nb,Ta, and V single crystals investigated by neutron spectroscopy

Quasielastic scattering of slow neutrons on hydrogen diffusing in the-phase of NbH_0.02, TaH_0.13 and VH_0.07 single crystals was investigated in a wide range of temperatures and scattering vectorsQ (0.5Q2.5 Å^–1). The incoherent scattering lawS _d (Q,) for four different diffusion models was consistently compared with the measured lineshapes. At elevated temperatures one had to introduce correlated jumps to describe the experimental data, whereas at room temperature a model with jumps between adjacent sites is sufficient. The integrated quasielastic intensityI(Q) obtained from the fit ofS _d (Q,) with the measured spectra follows an isotropic Debye-Waller factor with mean square amplitudes u ²=0.02–0.04 Ų for H in Ta (20°C–500°C), and u ²=0.03–0.04 Ų for H in Nb (20°C–300°C). For H in V,I(Q) obtained from the analysis of the quasielastic scattering deviates from a normal Debye-Waller factor behaviour. This effect is assumed to be due to the flight process between the interstitial sites. On the other hand, a normal Debye-Waller factor was obtained from theQ-dependence of the inelastic scattering of the band modes, with values of u ²=0.02–0.04 Ų (135°C–500°C). The observed values of u ² were compared with theoretical calculations.     

Low-Temperature Midinfrared Absorption in GaSe

We report the measurement of the temperature dependence of the absorption spectra of - GaSe over the temperature range 300 K to 5 K. Measurements have been made for both the e-ray (polarized parallel to the crystals c-axis) and the o-ray (polarized perpendicular to the c-axis), over the spectral range 4000 to 10 cm^–1. Nine absorption lines at 417, 440, 499, 546, 891, 945, 1015, 1093, 1270 cm^–1 were recorded at 300 K for the e- ray spectra. Some of these lines were identified using the results of a modified single layer, linear chain model of GaSe. The lines at 417, 440 and 499 cm^–1 were assigned to local impurity absorption originating from N, Mg and O, respectively. The weak lines at 945, 1015 and 1093 cm^–1 were assigned to hole transitions from the acceptor levels to the top of the valence band. Two absorption lines at 891 cm^–1 and 1270 cm^–1 were assigned to hole transitions from the quasi-local acceptor levels to the double degenerate valence sub-bands ₅ or ₆. The origin of lines recorded in the far IR absorption spectra at 20, 37 cm^–1 and 362 cm^–1 were also identified.     

Electrical resistivity and thermoelectric power of amorphous niobium-nickel alloys synthetized by vapour quenching

Thin film samples (10–20 thick) of niobium-nickel alloys in the composition range Nb-5 to 95 at % Ni were vapour quenched by R. F. sputtering onto fused quartz substrates held at a temperature of 450 K. It was found that fully glassy alloys were synthetized in the composition range Nb-30 to 85 at % Ni, 2·5 times larger than reported for splat-quenched alloys. Crystallization temperatures exhibited maxima near the eutectic composition and are comparable to those of splat-quenched materials. At room temperature, the electrical resistivity of these alloys lies between 176–210 cm, and the absolute thermoelectric power S between 2·20–2·52 V/K. On increasing the temperature from 4·2 to 775 K, up to which the amorphous alloys are stable, the resistivity of the alloy with=0·50 decreases by about 1·5%; the value of d/dT progressively increases with increasing Ni content, becoming positive at 0·50dS/dT of all alloys lies between 6–8·5×10^–3V deg^–2. The electrical behaviour of these alloys may be treated in terms of electron scattering in disordered structures assuming the nearly free-electron model, in a manner analogous to Ziman's theory of electronic transport in liquid metals.     

Phase Transformations in the Fe-Co System

X-ray diffraction, transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS) and magnetic studies of Fe₅₀Co₅₀, Fe₆₅Co₃₅ and Fe₃₅Co₆₅ alloys have been performed after different isothermal heat treatments of the alloys at 500–1200°C. It is shown that in the A2 region of the diagram the separation into fcc Co and bcc Fe occurs in a thin surface layer, and partially in the bulk (5–10%). The conclusion is made that B2 ordering of the alloy quenched starts with the precipitation of globular particles consisting of the species, which are in excess relative to the stoichiometric composition of the B2 phase. Prior to the B2 ordering onset, the separation-ordering phase transition occurs; this is accompanied by changes in the electronic structure of the valence band of the Fe₅₀Co₅₀ alloy. The so-called 550°C anomaly is the result of the phase transformation, which proceeds according to a martensitic mechanism and leads to a small increase of the lattice parameter. The conclusion is made that the dependence of the magnetic properties of Fe-Co alloys on B2 ordering is not clearly expressed.     

Micro-Raman spectroscopy in polycrystalline CuInSe2 formation

The crystalline formation of CuInSe₂ thin films has been investigated using micro-Raman spectroscopy and AES composition analysis. It is confirmed that the Raman peaks are stongly dependent on the surface morphology and the Cu:In:Se ratio. In the films annealed at 315°C, crystalline grains larger than 2 m show Raman peaks at 174 cm^–1 and 258 cm^–1. The In content is very low and the Cu:Se ratio is about 1:1 in these grains. The low In concentration is thought to be due to the formation of In₂O₃ on the surface. On the other hand, random structures of 1–2 m grains found in films annealed at temperatures below 305°C show peaks at 174 cm^–1 and 186 cm^–1 instead of 258 cm^–1 and have a Cu:In:Se ratio of 1:1:3–4. Thus the 186 cm^–1 peak is thought to be related to a Cu, In-deficient phase when compared to stoichiometric CuInSe₂. The optimum annealing condition was found by analyzing the Raman spectra and composition of different crystalline CuInSe₂ grains. Films annealed under this condition exhibited a clear Raman peak at 174 cm^–1 and consisted of clusters of crystals less than 1 m in size.     

Recombination of nonequilibrium current carriers in n-InAs1−x−ySbxPy

The stationary photoconductivity, the photomagnetic effect, and the relaxation kinetics of photoconductivity in n-InAs_1–x–ySb_xP_y crystals (x=0.06, y=0.11) with n₀ = 8·10¹⁵ and 3·10¹⁶ cm^–3 were measured and the lifetimes of nonequilibrium current carriers in the temperature interval T=78–295 K were determined. The possible mechanisms of recombination, which limit the lifetimes (radiative _R, Auger recombination _A, and recombination through centers with E_f=0.13 eV), which, as is demonstrated, are determined by interband recombination processes with _RA = _RA/(_R + _A), are calculated theoretically. The contribution of the 0.13 eV recombination centers can be significant when n₀10¹⁴ cm^–3.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 52–54, April, 1991.     

The metal-semiconductor transition in amorphous Si1−x Cr x films:T 0.19-contribution to the metallic conductivity

A detailed phenomenological re-analysis of previously published conductivity data, (T, x), is presented. It is based on the investigation of differences, (T, x ₁)–(T, x ₂). In this way, the cusp-like low-temperature term is amplified against the other temperature dependent contributions. This term can be described by wherep=0.19±0.03. It is present, if (4.2 K,x) exceeds 260 ^–1 cm^–1, at least up to (4.2 K,x)1350 ^–1 cm^–1 and forT60 K. But it is absent, if (4.2 K,x)180 ^–1 cm^–1. The disappearance of this contribution should be related to the metal-semiconductor transition, taking place atx _c 0.14. On the other hand, the presence of a term proportional toT ^1/2, as predicted by Altshuler and Aronov, seems unlikely.It is argued that the term should be related to the interplay of electron-electron interaction and disorder. The comparison with data from the literature shows that this contribution might also be present in heavily doped crystalline semiconductors.     

Effect of annealing on the photoelectric properties of single crystals of InSe

The effect of different heat-treatment regimes on recombination processes in n-In_1.03Se_0.97<0.5Zn> was studied by the method of square-wave modulation of light intensity, with subsequent analysis of the experimental data by the least squares method on a computer. The specimens were annealed at a temperature of 360–400°C in a vacuum [1] or Zn vapors [11] for different periods of time. They were then slowly cooled at a rate of 2 deg/min (A) or quenched (B). It was established the lifetime of the nonequilibrium carriers increases by nearly an order of magnitude in case IB, while the ratio of s- and r-centers remains nearly the same. In case IIA, _s decreases roughly by a factor of two, while in the best specimens it reaches 2.3·10^–5 sec. Annealing for 20 h in regime IA leads to a large increase (by about 25%) in the density of s-centers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 61–64, November, 1990.     

Observation ofμ − spin precession in ferromagnetic Ni and giant hyperfine anomaly

A ^–SR signal in nickel was found representing the first observation of ^–SR in ferromagnetic materials, and the hyperfine anomaly was determined to be –2.82±0.08% in comparison with the hyperfine field at dilute Co in Ni known from NMR.     

Neutron scattering from liquid helium three at elevated pressure

The inelastic neutron scattering from liquid³He at 0.7 K has been measured at the saturated vapour pressure, 10 bars, and 20 bars pressure, using the IN5 time of flight spectrometer at the Institut Laue-Langevin. Results were obtained for wavevector transfers,Q, in the region, 1.1<Q<2.4 Å^–1, and for energy transfers,, up to 27 K. There was no indication of a well defined zero sound mode even at an applied pressure of 20 bars. At low wavevector transfers, increasing the pressure increases the intensity at low energy transfers (<10 K), while at higher energy transfers, a decrease in intensity is observed with increasing pressure. At higher wavevector transfers, (Q1.9 Å^–1, the position of the roton minimum in superfluid⁴He), the scattering is a broad distribution, whose peak frequency decreases by more than a factor of 2, on increasing the pressure from S.V.P. to 20 bars. This is a considerably larger change in energy than is expected from previous estimates of the pressure dependence of the effective mass of³He.     

Electronic spectrum of cobalt doped rubidium zinc sulphate hexahydrate

Optical absorption spectrum of Co²⁺ doped rubidium zinc sulphate hexahydrate has been investigated both at room and at liquid nitrogen temperatures. The gross features of the observed spectrum are characteristic of octahedral symmetry associated with spin-orbit interaction. The interelectronic repulsion (B, C), crystal field (Dq) and spin-orbit () parameters which give a good fit to the observed band positions areB = 860 cm^–1,C = 3870 cm^–,Dq = 980 cm^–1,= 500 cm^–1. The non-ligand bands observed in the spectrum are attributed to vibrational modes of water molecule.The authors are thankful to the Council of Scientific and Industrial Research, New Delhi (India) for financial support.     

Dielectric Properties of Lithium–Titanium Ferrite Ceramics

The temperature dependences of the real and imaginary parts of the complex dielectric permittivities of ceramic Li–Ti ferrospinel are measured within the frequency range 10²–10⁶ Hz. The empirical expressions describing these dependences are derived and the frequency-independent electrophysical parameters of the material under study are obtained. The best agreement between the experimental and calculation data is achieved when the time constant and the static dielectric permittivity are decreasing functions of frequency. A model of relaxational processes accounting for this result is proposed. A certain role in polarization of the relaxation agents, whose reorientation is controlled by tunneling electron transitions inside the two-valence iron ion – three-valence metal ion, is assumed. It is stated that under certain conditions, the relaxation agent reorientation is likely to possess a collective character. The temperature dependences and are derived for a number of dc currents at different electric field strengths. Sharp variations in the dielectric characteristics of the ceramics are found.     

Analyticity properties of eigenfunctions and scattering matrix

For potentialsV=V(x)=O(|x|^–2–) for |x|,x³ we prove that if theS-matrix of (–, –+V) has an analytic extension to a regionO in the lower half-plane, then the family of generalized eigenfunctions of –+V has an analytic extension toO such that for |Imk|<b. Consequently, the resolvent (–+V–z ²)^–1 has an analytic continuation from ⁺ to {kOImk|<b} as an operator from _b ={f=e ^–b|x| g|gL ₂(³)} to _–b . Based on this, we define for potentialsW=o(e ^–2b|x|) resonances of (–+V, –+V+W) as poles of and identify these resonances with poles of the analytically continuedS-matrix of (–+V, –+V+W).The author would like to thank the Institute for Advanced Study for its hospitality and the National Science Foundation for financial support under Grant No. DMS-8610730(1)     

Asymptotic behavior of the density for two-particle annihilating exclusion

We consider a stochastic process which presents an evolution of particles of two types,A andB, onZ ^d with annihilations between particles of opposite types. Initially, at each site ofZ ^d, independently of the other sites, we put a particle with probability 2<1 and assign to it one of two types with equal chances. Each particle evolves onZ ^d in the following manner: independently from the others, it waits an exponential time with mean 1, chooses one of its neighboring sites on the latticeZ ^d with equal probabilities, and jumps to the site chosen. If the site to which a particle attempts to move is occupied by another particle of the same type, the jump is suppressed; if it is occupied by a particle of the opposite type, then both are annihilated and disappear from the system. The considered process may serve as a model for the chemical reactionA+Binert. Let (t) denote the density of particles in this process at timet. We prove that there exist absolute finite constantsc(d) andC(d) such that for all sufficiently larget,c(d)t ^–d/4 (t)C(d)t ^–d/4 in the dimensionsd4 andc(d)t ^–1 (t)C(d)t ^–1 in all higher dimensions. This completes and makes more precise the results obtained by us earlier and shows that asymptotically the density behaves like that in a similar process called two-particle annihilating random walks which was studied by Bramson and Lebowitz. Our proofs are based on the approach developed in their and our works. We use the basic properties of random walk and various tools which have been designed to study simple symmetric exclusion processes.     

Effect of quenching temperature on the components of the permeability tensor and the complex dielectric constant of microwave magnesium ferrites

We report an investigation of the effect of the quenching temperature (from 900 °C, 700 °C, and for self-cooling) on the components of the permeability tensor and on the complex dielectric constant * of magnesium-aluminum, magnesium-chromium and magnesium-manganese, ferrites of fixed composition. The measuring apparatus and measurement procedure are described and an estimate of the errors is given. It is shown that due to quenching the gyrotropic properties of the ferrites are increased ( falls and _a increases), while the dielectric constant is unchanged. Quenching leads to an increase in the magnetic and dielectric losses.Translated from Izvestiya VUZ. Fizika, Vol. 11, No. 11, pp. 41–47, November, 1968.     

Electron emission from sandwich cathodes with mica dielectric layer

The measurements of the leakage and emission characteristics of sandwich cathodes with a mica dielectric layer are described. The thickness of the mica varied between 0.6–11 m, the thickness of the upper gold electrode was about 200 Å. The leakage characteristics were well reproducible, the leakage current density was 10^–11–10^–5 A/cm². The emission characteristics had an exponential form, the emission currents were quite unstable. In some cases the transmission coefficient attained much greater values than for other sandwich cathodes (0.5). At higher applied voltage spontaneous slow relaxation oscillations of the emission current were observed. A qualitative interpretation of the observed phenomena is made.Presented at the 13th Field Emission Symposium in Ithaca (New York), U.S.A. in September 1966.     

Temperature dependence of the effective work function for the BaO - W system

The temperature dependence of the work function has been examined for the BaO-W system for degrees of coating less than 1 and about 1 in the range 700–1400 °K; it is found that a monomolecular film gives a negative sign of this coefficient in this temperature range ( /T 10^–4 –10^–3 eV/deg). At 1000–1200 °K, the temperature coefficient is almost zero, while at 1200–1400 °K there is a positive value. If the covering is less than monomolecular, the sign is positive throughout the entire temperature range (/T 10^–4 eV/deg).Deceased.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, No. 9, pp. 65–70, September, 1971.We are indebted to N. I. Éngovatova for direct assistance with the measurements, and to V. Rumyantsev for advice.     

An interaction of nucleons at an energy between 1014 and 1015 eV/nucleon

A jet (0+14) with primary energy {3.3 _{– 2.2} ^{+ 5.3} }. 10¹⁴ eV/nucl. was observed in the I-stack. An interaction with very small multiplicity (n _s =3or 4)found in the axis of the jet is probably caused by another nucleon from the -primary. 10 particles of the narrow cone have opening angles of some 10^–4 radians, 4 particles in the diffuse cone are emitted at angles of a few 10^–2 radians. A pronounced anisotropy exists in the C. M. system. The coefficient of inelasticity 0.1was calculated directly extrapolating the measured energies of secondaries. The interpretation of the whole event is in good agreement with Heisenberg's theory of multiple production of particles.