Effect of Radiofrequency Plasma Assisted Grafting of Polypropylene on the Properties of Muga Silk Yarn

Radiofrequency (RF) Ar/propylene glow discharge is utilized for grafting polypropylene onto muga silk yarn at working pressure of 1.2?×?10^?1 mbar and in the of RF power range of 20?C80?W. The plasma discharge is diagnosed using self-compensated emissive probe to study the variation of ion energy impinging on the substrates with RF power. From chemical compositional analysis, a possible grafting mechanism between propylene and muga yarn is proposed by considering the charge-transfer initiation through the formation of electron-donor?Cacceptor (EDA) complex. X-ray photoelectron spectroscopy reveals that at RF power values of 60?C80?W, the ion sputtering effect becomes dominant over plasma grafting thereby leading to severe destruction in chemical structure of the polypropylene grafted (PP-grafted) muga yarns. The experimental results show that PP-grafted muga yarns exhibit improved mechanical strength and hydrophobic behavior as compared to the virgin yarn. The properties of the PP-grafted muga yarns are observed to be dependent on atomic concentration, surface morphology as well as the results obtained from plasma discharge characteristics.     

Time Resolved Spectroscopic Characterization of a-C:H Deposition by Methane and Removal by Oxygen Inductively Coupled RF Plasma

The deposition of amorphous hydrogenated carbon thin films by inductively coupled radio frequency (IC RF) pure methane plasma and its subsequent removal by IC RF pure oxygen plasma have been studied within a cylindrical glass tube. Both processes were simultaneously monitored by optical emission spectroscopy, light transmission through thin film deposits, temperature of the discharge tube and total gas pressure measurements. Comparing the time evolution of all parameters, various stages of oxygen plasma cleaning process were established. The transitions between E-mode and H-mode of plasma induced by the presence of cleaning products impurities were observed and discussed.     

On the influence of electron energy on iodine‐doped polyaniline formation by plasma polymerization

The influences that both electron energy and density of a plasma bear on thin film formation are examined in the case of iodine‐doped polyaniline polymerization. The plasma was produced by means of 13.5‐MHz radiofrequency–generated glow discharges in low‐pressure (ca. 10⁻² mbar) air between electrodes. Four representative inner regions of the reactor were selected according to the electron incidence. Given the uneven energy distribution found on the inside of this kind of reactors, variations in the polymer structure formed in the presence of iodine were found and studied by elemental analysis, thermogravimetry, infrared spectroscopy, and X‐ray diffraction. The results indicate that the electric conductivity of polyaniline by plasma is a function of the iodine content and that such content is a function of the combined conditions of both reactor and plasma. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 175–183, 2001     

Optical emission spectroscopy of nitrogen species and plasma plume induced by laser ablation combined with pulse modulated radio-frequency discharge

Combined laser ablation and pulse modulated radio-frequency (RF) discharge for deposition of CNalpha films was studied by the use of optical emission spectroscopy. Chemically active nitrogen was produced by RF discharge, concentrated between two small electrodes. Influence of RF power, nitrogen pressure, modulation frequency and pulse rate on nitrogen species production was researched. For the same system plasma expansion rate, kinetic energy and concentration of carbon ions emitted by laser from graphite target were determined by Langmuir probes measurement.     

Deposition of plasma conjugated polynitrile thin films and their optical properties

The plasma polymerization of 4-phenylbenzonitrile was carried out with the objective of synthesizing a novel conjugated polynitrile thin film with a better optical property. The structure, compositions and morphology of the plasma-polymerized 4-phenylbenzonitrile (PPBPCN) thin films were investigated by Fourier transform infrared (FTIR), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). A fine, homogenous PPBPCN film with a large π-conjugated system and a high retention of the aromatic ring structure of the starting monomer in the deposited plasma films is obtained when a low discharge power of 30 W was used during film formation. For the first time, a blue emission with relatively high photoluminescence intensity for PPBPCN thin films was observed.     

Electroluminescence and Photoluminescence of Conjugated Polymer Films Prepared by Plasma Enhanced Chemical Vapor Deposition of Naphthalene

Polymer light-emitting devices were fabricated utilizing plasma polymerized thin films as emissive layers. These conjugated polymer films were prepared by RF plasma enhanced chemical vapor deposition using naphthalene as monomer. The effect of different applied powers on the chemical structure and optical properties of the conjugated polymers was investigated. Fourier transform infrared (FTIR) and Raman spectroscopies confirmed that a conjugated polymer film with a 3-D cross-linked network was developed. By increasing the power, products tended to form as highly cross-linked polymer films. The fabricated devices showed broadband Electroluminescence (EL) emission peaks with center at 535–550 nm. Photoluminescence (PL) spectra of plasma polymers showed different excimeric emissions, resulted from crosslinked architecture. As the plasma power increased, the optical properties showed two different domains; up to 200 W, EL, PL and UV–Vis spectra red-shifted and broadened significantly. At higher powers, a reverse behavior was observed. Also, the relation between the film structure and plasma species was investigated using optical emission spectroscopy.     

Plasma diagnostics of an analytical Grimm-type glow discharge in argon and in neon: Langmuir probe and optical emission spectrometry measurements

Comparative investigations were performed on a Grimm-type glow discharge source by Langmuir probe measurements and by optical emission spectrometry. The Langmuir probe measurements yielded electron temperatures and number densities of electrons, whereas the optical emission spectrometry measurements resulted in data for excitation and ionization temperatures of different species. The results confirm that there is no local thermal equilibrium in the discharge plasma. The operating conditions of the glow discharge source and also the working gas and the cathode material were varied to investigate their influence on the plasma parameters. The outcome of the plasma diagnostics will be used to improve the modelling of relevant excitation and ionization processes by computer simulation. The major physical processes in the low pressure glow discharge plasma should be better understood if the analytical capability of this spectrochemical excitation and ionization source has to be further enhanced.     

Langmuir probe measurements of axial variation of plasma parameters in 27.1 MHz rf oxygen planar discharges

Langmuir probe studies have been performed on rf (27.1 MHz) discharges in O₂ under planar reactor conditions to determine the axial variation of the plasma parameters (positive ion density, electron temperature, and dc space potential) as a function of pressure (20–220 Pa) and power (10–150 W) or current (0.1–2 A). By monitoring the second derivative of the I–V probe characteristics, the suppression of the rf component in the probe circuit can be optimized. Referring to this problem, numerical studies provide relations for the determination of the residual rf component as well as of the dc component of the plasma potential at incomplete rf compensation. The positive ion density is obtained from the ion saturation currents. Here the effect of collisions between ions and neutral particles within the probe sheath (for p> 100 Pa) is considered. The electron energy distribution function is found to be of the Maxwellian type for all discharge conditions investigated here. If the pressure and the power exceed critical values, the axial charge carrier distribution is characterized by a valley formation in the bulk plasma center. This fact demonstrates that secondary electron emission due to ion impact on the electrode surfaces and following ionization by these electrons near the sheaths in front of the electrodes are significant processes for sustaining the discharge. At low pressures (p60 Pa) the dc plasma potential was found to be identical with the half-peak maintaining voltage of the discharge, in agreement with the model idea of a symmetric rf planar discharge where the rf voltage drop across the bulk plasma can be neglected. For growing pressure, however, the plasma system moves gradually toward a situation where the V-I characteristics of the discharge are significantly controlled by processes in the bulk plasma. This transition depends on the current density.     

Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.     

Effect of bias and temperature on the bulk and surface properties of gold-containing plasma-polymerized fluorocarbons

Gold-containing plasma-polymerized fluorocarbon thin films have been deposited in an RF glow discharge fed with hexafluoroethane, while a gold target was simultaneously sputtered. Tile temperatureT _s and RF-induced biasU _s of a third electrode, used as a substrate holder, were separately varied. The influence ofT _s andU _s on the plasma and file lihn characteristics were individually studied using actinometric optical emission spectroscopy, X-ray photoelectron spectroscopy, infrared spectroscopy, and measurements of optical transmission and surface contact angles. IncreasingU _s (up to –200 V) andT _s (up to 90°C) resulted in similar effects, namely a higher degree of cross-linking, higher gold concentration, better film stability with time, and increased wettability. A key role of the energy flux of particles impinging on the growing surface has been shown to account far the experimental results.On leave from the Faculty of Mathematics and Physics, Charles University, Praha, Czechoslovakia.     

Preparation of Silicon Thin Films of Different Phase Composition from Monochlorosilane as a Precursor by RF Capacitive Plasma Discharge

Monochlorosilane/argon/hydrogen (SiH₃Cl-Ar-H₂) mixture of different ratios was investigated from the point of PECVD application. RF capacitive plasma discharge of 40.68 MHz frequency was used. The process of deposition was studied by optical emission spectroscopy. The silicon thin films of different phase composition were obtained. The thin films were characterized by Raman-spectroscopy, atomic force microscopy, and secondary ion mass spectrometry. The exhaust gas mixture was analyzed by IR-spectroscopy in outlet of the reactor during PECVD process. The chemical mechanism for the deposition process was also proposed.     

低介电常数聚喹啉衍生物薄膜的合成与表征

采用等离子体聚合技术合成了一种新型的低介电常数聚喹啉衍生物薄膜: 聚3-氰基喹啉(PP3QCN)薄膜. 借助于傅里叶变换红外光谱(FT-IR)、紫外-可见(UV-Vis)吸收光谱、X光电子能谱(XPS)和原子力显微镜(AFM)对薄膜结构进行了系统表征. 结果表明, 等离子体聚合条件对沉积膜的化学结构、表面组成、膜形态以及介电性能均有影响. 在较低的等离子体放电功率(10 W)条件下, 可得到具有较高芳环保留率和较大π-共轭体系的高质量聚3-氰基喹啉薄膜材料; 而在较高功率(25 W)条件下, 聚合过程中会出现比较严重的单体分子破碎, 形成较多非π-共轭体系的聚合物, 从而导致聚3-氰基喹啉的共轭度降低. 聚3-氰基喹啉薄膜的介电性能测试结果表明, 低放电功率(10 W)条件下制得的聚3-氰基喹啉薄膜具有比较低的介电常数值, 仅为2.45.     

A spectroelectrochemical study on single-oscillator model and optical constants of sulfonated polyaniline film

The optical properties of sulfonated polyaniline (SPAN) thin film prepared by electrochemical method have been investigated. Polychromic behavior of SPAN thin film (transparent yellow-green-dark blue) was observed when the cyclic voltammograms were taken between -0.25 V and +1.90 V (vs. Ag/AgCl, sat.) during the growth of polyaniline film. In situ UV-vis spectra of the polymers-indium tin oxide (ITO) glass electrode were taken during the oxidation of the polymers at different applied potentials. The direct band gap values of SPAN thin film changed from 3.771 eV to 3.874 eV with the applied potentials. From in situ UV-vis spectra, the optical constants such as refractive index and dielectric constant of the SPAN thin film were determined. The important changes in absorption edge, refractive index and the dielectric constant were observed due to the applied potentials. The refractive index dispersion curves of the film obey the single-oscillator model and oscillator parameters changed with the applied potentials. The most significant result of the present work is in situ spectroelectrochemical method, which can be used to modify the optical band gaps and constants.     

Structure and properties of plasma-polymerized thin films of polyaniline

Plasma polymerization of aniline and in-situ doping of polvaniline with iodine was carried out using radio frequency glow discharge. Thin films of polyaniline were deposited on platinum and glass. The infrared spectrum shows that the aromatic ring is retained under the plasma conditions. The electrical conductivity measurements indicate that the conductivity increases by more than seven orders of magnitude when the polyaniline is doped by iodine. The scanning electron microscopic studies reveal the formation of irregular pentagons on glass substrate while on platinum, polvaniline forms a fibrillar network. In both the cases a continuous film is obtained.     

溶液法制备的碳纳米管薄膜的结构分析与场致电子发射机理研究

结合紫外光电子能谱和拉曼光谱对溶液法制备的碳纳米管薄膜的场致电子发射性能进行研究。采用溶液滴涂法制备的碳纳米管薄膜的场致电子发射开启电场约为3.33 MV/m,阈值电场约为5.44 MV/m,以福勒-诺得海姆(Fowler-Nordheim,FN)理论对电子发射进行解释,其发射的增强因子接近103。通过对紫外光电子能谱的分析,发现碳纳米管薄膜的低能量截止端在外加电场作用下逐步降低,表明纳米管薄膜的表面有效势垒在外加电场作用下逐步下降,从而使得碳纳米管薄膜的电子更加容易发射进入真空。结合拉曼光谱和电学特性的研究,发现界面过渡层的接触电阻与碳纳米管薄膜中的非晶碳成分均可以增强场致电子发射。     

Optical emission spectroscopy of benzyl radicals produced in a radio-frequency plasma

The benzyl radical was studied by optical emission spectroscopy in gas phase. This radical was produced in a radio-frequency (RF, 13.56 MHz) discharge, using benzyl alcohol (?CH(2)OH) as a precursor. The fluorescence from the first excited electronic state 1(2)A(2) to ground state 1(2)B(2) (450 nm) was studied as a function of several external parameters (pressure, RF power, electrodes and mixtures of the inert gases Ar, Ne, He, N(2), with the precursor). We also used a DC discharge to produce this radical but, in this case, the decomposition was fast. We observed changes in the electronic transitions of this radical, and found the best conditions to study it by optogalvanic spectroscopy.     

Thermal effects in low-pressure plane plasma apparatus for thin films applications

Thermal effects in a low-pressure plane plasma discharge were obtained in a novel implementation of triode sputtering method. This plane plasma discharge is formed in a relatively low vapor pressure of 0.03-0.65 Pa. Electron beam temperature and ion beam concentration distribution, as well as their dependence on argon pressure within the plasma, were experimentally studied, using the Langmuir probe technique. The influence of an external magnetic field on the ion beam concentration, and electron beam temperature, were studied too. As a result of these studies, sputtering of various materials was done using the novel plane plasma discharge method. This method enables the deposition of homogeneous thin film coatings. Analysis is done on Cu sputtered layers with plane plasma discharge. This revised version was published online in July 2006 with corrections to the Cover Date.     

Pattern Formation in Thin Polymer Films Containing Conducting Polyaniline

Summary: In the present work knowledge the authors tried to direct the phase separation process in a thin polymer composite film to manufacture a polymer pattern via self organisation of the blend components. The Au substrate was modified by applying with a PDMS stamp a pattern of alternating stripes of a self-assembled monolayer. This in turn influenced the microstructure of the blend, allowing for the production of elongated domains repeating the pattern of the substrate. The blends studied in this work contained conducting polyaniline doped with camphorsulfonic acid or diphenyl phosphate and polystyrene. The role of the dopant was to induce electrical conductivity in polyaniline as well as to improve its solubility in common organic solvents. The microstructure of thin films was analysed using atomic force microscopy (AFM), dynamic secondary ion mass spectroscopy (dSIMS) and optical microscopy.     

Polyfluorene Thin Films Synthesized by a Novel Plasma Polymerization Method

The synthesis of polyfluorene (PF) thin films by simultaneously superposing a continuous and pulsed discharge and the characterizations of these samples are presented. The double discharge plasma system is constructed by superposing two discharges; namely, a low pressure dc glow one and a high current pulsed one. The fluorene monomer in powder form was vaporized in the system at argon plasma without any modification, at 0.5 mbar operating pressure. The structure of the thin films was investigated via XPS, UV–visible, FTIR, XRD and SEM. The FTIR and the UV–visible results revealed that the fluorene structure was retained at the produced samples. Semi-conducting behavior was established, and upon the iodine doping, the optical energy band gap (E _g ) dropped down from 3.7 to 2.4 eV. The morphology of the synthesized PF thin films was amorphous, with granular structures of different sizes depending on the location of the substrate.     

Structural properties of lithium thio-germanate thin film electrolytes grown by radio frequency sputtering

In this study, lithium thio-germanate thin film electrolytes have been successfully prepared by radio frequency (RF) magnetron sputtering deposition in Ar gas atmospheres. The targets for RF sputtering were prepared by milling and pressing appropriate amounts of the melt-quenched starting materials in the nLi(2)S + GeS(2) (n = 1, 2, and 3) binary system. Approximately 1 μm thin films were grown on Ni coated Si (Ni/Si) substrates and pressed CsI pellets using 50 W power and 25 mtorr (～3.3 Pa) Ar gas pressures to prepare samples for Raman and Infrared (IR) spectroscopy, respectively. To improve the adhesion between the silicon substrate and the thin film electrolyte, a sputtered Ni layer (～120 nm) was used. The surface morphologies and thickness of the thin films were determined by field emission scanning electron microscopy (FE-SEM). The structural properties of the starting materials, target materials, and the grown thin films were examined by X-ray diffraction (XRD), Raman, and IR spectroscopy.