Investigation of thermal sensitivity and radiation resistance of SiOx〈Ti〉 metal-dielectric films

In this investigation the composite SiO_x〈Ti〉 films were prepared by the thermal evaporation of a mixture of silicon oxide (SiO₂) and Тi powders. The optical transmission of the films in the IR spectral range and their temperature-sensitive properties are studied. By varying the contents of the metal in vaporizer and time of evaporation it is possible to obtain SiO_x〈Ti〉 layers with resistance (for monopixel of 0.8 × 1 mm) from tens kOhms to MOhms and a value of the temperature coefficient of resistance (TCR) is equal to −2.22% K⁻¹. IR spectrum of SiO_x〈Ti〉 film is characterized by a broad absorption band in the range of 8–12 μm which is associated with the Si–O–Si stretching mode.Investigations of the effect of gamma irradiation on SiO_x〈Ti〉 films have shown that their temperature-sensitive properties, in particular TCR does not change up to a dose of 10⁶ Gy.These results suggest that SiO_x〈Ti〉 films can be used as materials for production of radiation-resistant thermosensitive detectors operated in radiation fields of γ-radiation and combining functions of IR-absorption and formation of an electric signal.     

Fabrication of type-II InAs/GaSb superlattice long-wavelength infrared focal plane arrays

In this paper, we present an InAs/GaSb type-II superlattice (SL) with the M-structure for the fabrication of a long-wavelength (10 μm range) infrared (LWIR) focal plane arrays (FPA), which are grown by molecular beam epitaxy (MBE). The M-structure is named for the shape of the band alignment while the AlSb layer is inserted into the GaSb layer of InAs/GaSb SL. A 320 × 256 LWIR FPA has been fabricated with low surface leakage and high R₀A product of FPA pixels by using anodic sulfide and SiO₂ physical passivation. Experiment results show that the devices passivated with anodic sulfide obviously have higher R₀A than the un-sulphurized one. The 50% cutoff wavelength of the LWIR FPA is 9.1 μm, and the R₀A is 224 Ω cm² with the average detectivity of 2.3 × 10¹⁰ cm Hz^1/2 W⁻¹.     

Optical and electrical properties of Ge-implanted SiO2 layers on n-Si and p-Si

Ge ions of 100 keV were implanted into a 120 nm-thick SiO₂ layer on n-Si at room temperature while those of 80 keV were into the same SiO₂ layer on p-Si. Samples were, subsequently, annealed at 500°C for 2 h to effectively induce radiative defects in the SiO₂. Maximum intensities of sharp violet photoluminescence (PL) from the SiO₂/n-Si and the SiO₂/p-Si samples were observed when the samples have been implanted with doses of 1×10¹⁶ and 5×10¹⁵ cm⁻², respectively. According to current–voltage (I–V) characteristics, the defect-related samples exhibit large leakage currents with electroluminescence (EL) at only reverse bias region regardless of the type of substrate. Nanocrystal-related samples obtained by an annealing at 1100°C for 4 h show the leakage at both the reverse and the forward region.     

Nonlinear optical properties of silver colloidal solution by in situ synthesis technique

The silver colloidal solutions were prepared by in situ synthesis technique in the presence of the Polymethyl Methacrylate, which was polymerized by reversible addition-fragmentation transfer. The UV–VIS spectra and transmission electron microscopy had shown the formation of sphere silver nanoparticles with average size of 10 nm. Nonlinear optical properties as a function of silver concentration were studied using Z-scan technique with 13 ns pulse duration at 532 nm. The optical nonlinearity enhancement was observed by increasing the concentration. The third-order nonlinear susceptibility χ⁽³⁾ was measured to 1.045 × 10⁻¹¹ esu when the concentration was 2.13 mg/ml. Besides, the sample was founded to exhibit a shift from saturable absorption to reverse saturable absorption at higher incident laser energy. The reverse saturable absorption was observed to be responsible for the optical limiting characteristics in our experiments.     

Oxygen diffusion and surface exchange studies on (La0.75Sr0.25)0.95Cr0.5Mn0.5O3−δ

Oxygen tracer diffusion coefficient (D^⁎) and surface exchange coefficient (k^⁎) have been measured for (La_0.75Sr_0.25)_0.95Cr_0.5Mn_0.5O_3−δ using isotopic exchange and depth profiling by secondary ion mass spectrometry technique as a function of temperature (700–1000 °C) in dry oxygen and in a water vapour-forming gas mixture. The typical values of D^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 4 × 10^− 10 cm² s^− 1 and 3 × 10^− 8 cm² s^− 1 respectively, whereas the values of k^⁎ under oxidising and reducing conditions at ∼ 1000 °C are 5 × 10^− 8 cm s^− 1 and 4 × 10^− 8 cm s^− 1 respectively. The apparent activation energies for D^⁎ in oxidising and reducing conditions are 0.8 eV and 1.9 eV respectively.     

Proton dynamics in Cs3(HSO4)2(HPO4) studied by 1H NMR

Proton dynamics in Cs₃(HSO₄)₂(H₂PO₄) has been studied by means of ¹H solid-state NMR as well as thermal analyses. The thermal analysis shows an endothermic peak at 408 K, which corresponds to a superprotonic transition. Above the transition temperature a mass loss is observed in a dry atmosphere, which is easily recovered in a conventional dry atmosphere below the transition temperature. The ¹H magic-angle-spinning NMR spectra at room temperature show two peaks at 13.5 and 15.8 ppm, and a shoulder at 11.3 ppm from tetramethylsilane, demonstrating a presence of several inequivalent proton sites. Translational diffusion of protons takes place in both a room-temperature phase (RT) and a high-temperature phase (HT). In both phases reorientation of the SO₄/PO₄ tetrahedron limits the rate of the proton transport. The ¹H mean residence times are estimated as E_a = 33 kJ mol^− 1 and τ₀ = 0.97 × 10^− 9 s for phase RT from the second moment analysis and as E_a = 20 kJ mol^− 1 and τ₀ = 5.0 × 10^− 12 s for phase HT from the analysis of the ¹H T₁ results.     

Structural,XPS and impedance analysis of LixCoVO4 (x = 0.8, 1.0, 1.2)

Lithium cobalt vanadate Li_xCoVO₄ (x = 0.8; 1.0; 1.2) has been prepared by a solid state reaction method. The XRD analysis confirms the formation of the sample. A new peak has been observed for Li_1.0CoVO₄ and for Li_1.2CoVO₄ indicating the formation of a new phase. The XPS analysis indicates the reduction in the oxidation of vanadium and oxygen with the addition of Li in Li_xCoVO₄ (x = 0.8, 1.0, 1.2). The impedance analysis gives the conductivity value as 2.46 × 10^− 5, 6.16 × 10^− 5, 9 × 10^− 5 Ω^− 1 cm^− 1 for Li_xCoVO₄ (x = 0.8; 1.0; 1.2), all at 623 K. The similarity in the bulk activation energy (E_a) and the activation enthalpy for migration of ions (E_ω) indicate that the conduction in Li_1.2CoVO₄ has been due to hopping mechanism.     

High room-temperature pyroelectric response of MgO-modified Pb0.99(Zr0.95Ti0.05)0.98Nb0.02O3 ceramics

The dielectric and pyroelectric responses of MgO-modified Pb_0.99(Zr_0.95Ti_0.05)_0.98Nb_0.02O₃ ceramics were investigated near F_R(LT)–F_R(HT) phase transition. It was found that MgO additive reduced the F_R(LT)–F_R(HT) phase transition temperature from 41 °C to room temperature (24 °C). Superior room-temperature pyroelectric properties were obtained in the composition of 0.10 wt% MgO addition without DC bias. The largest pyroelectric coefficient, 65 × 10⁻⁸ C cm⁻² K⁻¹, was detected. Accordingly, the detectivity figures of merit F_d had maximum values of 20 × 10⁻⁵ Pa^−1/2, and especially the voltage responsivity F_v = 0.91 m²C⁻¹ is the highest value reported so far among all pyroelectric materials. It shows promising potential for application in uncooled pyroelectric infrared detector.     

A Boubaker polynomials expansion scheme (BPES)-related protocol for measuring sprayed thin films thermal characteristics

Measurements of In₂S₃ and ZnIn₂S₄ sprayed thin films thermal characteristics have been carried out using the photodetection technique. The thermal conductivity k and diffusivity D were obtained using a new protocol based on photothermal signal parameters analysis. Measured values of k and D were respectively, (15.2 ± 0.85) W m⁻¹K⁻¹ and (69.8 ± 7.1) × 10⁻⁶ m²s⁻¹ for In₂S₃, (7.2 ± 0.7) W m⁻¹K⁻¹ and (32.7 ± 4.3) × 10⁻⁶ m²s⁻¹ for ZnIn₂S₄. These values are extremely important since similar compounds are more and more proposed as Cd-free alternative materials for solar cells buffer layers.     

High temperature protonic conduction in Sr-doped LaP3O9

Electrical conduction of Sr-doped LaP₃O₉ ([Sr]/{[La] + [Sr]} = 2–10 mol%) was investigated under 0.4–5 kPa of p(H₂O) and 0.01–100 kPa of p(O₂) or 0.3–3 kPa of p(H₂) at 573–973 K. Sr-doped LaP₃O₉ showed apparent H/D isotope effect on conductivity regardless of the Sr-doping level under both H₂O/O₂ oxidizing and H₂/H₂O reducing conditions at investigated temperatures. Conductivities of the material were almost independent of p(O₂) and p(H₂O). These results demonstrated that the Sr-doped LaP₃O₉ exhibited protonic conduction under wide ranges of p(O₂), p(H₂O) and temperature. The conductivity of the Sr-doped LaP₃O₉ increased with increasing Sr concentration up to its solubility limit, ca. 3 mol%, while the further Sr-doping slightly degraded the conductivity. These indicate that Sr²⁺ substitution for La³⁺ leads to proton dissolution into the material and induced protonic conduction. Conductivities of the 3 mol% Sr-doped sample were 2 × 10^- 6–5 × 10^− 4 S cm^− 1 at 573–973 K.     

Photoluminescence properties of Er-doped β-FeSi2 grown by ion implantation

Photoluminescence (PL) properties of Er-doped β-FeSi₂ (β-FeSi₂:Er) and Er-doped Si (Si:Er) grown by ion implantation were investigated. In PL measurements at 4.2 K, the β-FeSi₂:Er showed the 1.54 μm PL due to the intra-4f shell transition of ⁴I_13/2→⁴I_15/2 in Er³⁺ ions without a defect-related PL observed in Si:Er. In the dependence of the PL intensity on excitation photon flux density, the obtained optical excitation cross-section σ in β-FeSi₂:Er (σ=7×10⁻¹⁷ cm²) is smaller than that in Si:Er (σ=1×10^-15 cm²). In the time-resolved PL and the temperature dependence of the PL intensity, the 1.54 μm PL in β-FeSi₂:Er showed a longer lifetime and larger activation energies for non-radiative recombination (NR) processes than Si:Er. These results revealed that NR centers induced by ion implantation damage were suppressed in β-FeSi₂:Er, but the energy back transfer from Er³⁺ to β-FeSi₂ was larger than Si:Er.     

Synthesis and characterization of (Pr0.75Sr0.25)1 − xCr0.5Mn0.5O3 − δ as anode for SOFCs

The complex perovskite (Pr_0.75Sr_0.25)_1 − xCr_0.5Mn_0.5O_3 − δ (PSCM) has been prepared and studied as possible anode material for high-temperature solid oxide fuel cells (SOFCs). PSCM exhibits GdFeO₃-type structure and is both physically and chemically compatible with the conventional YSZ electrolyte. The reduction of PSCM resulted in structural change from orthorhombic Pbnm to cubic Pm-3m. Selected area electron diffraction (SAED) analysis on the reduced phases indicated the presence of a √2 × √2 × 2 superlattice. The total conductivity values of ∼ 75% dense Pr_0.75Sr_0.25Cr_0.5Mn_0.5O_3 − δ at 900 °C in air and 5% H₂/Ar are 9.6 and 0.14 S cm^− 1 respectively. The conductivity of PSCM drops with decreasing Po₂ and is a p-type conductor at all studied Po₂. The average TEC of Pr_0.75Sr_0.25Cr_0.5Mn_0.5O_3 − δ is 9.3 × 10^− 6 K^− 1, in the temperature range of 100–900 °C and is close to that of YSZ electrolyte. The anode polarization resistance of PSCM in wet 5%H₂ is 1.31 Ω cm² at 910 °C and in wet CH₄ at 930 °C; the polarization resistance is 1.29 Ω cm². PSCM was unstable at 900 °C in unhumidified hydrogen. Cell performance measurements carried out using graded PSCM and La_0.8Sr_0.2MnO₃ as anode and cathode respectively yielded a maximum power density of 0.18 W cm^− 2 in wet 5%H₂/Ar at 910 °C and the corresponding current density was 0.44 A cm^− 2 at 0.4 V. The activation energy for the electrochemical cell operating in wet (3% H₂O) 5%H₂/Ar fuel is 85 kJ mol^− 1.     

Synthesis of ammonia at atmospheric pressure with Ce0.8M0.2O2−δ (M = La,Y, Gd,Sm) and their proton conduction at intermediate temperature

Ionic conduction in fluorite-type structure oxide ceramics Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) at temperature 400–800 °C was systematically studied under wet hydrogen/dry nitrogen atmosphere. On the sintered complex oxides as solid electrolyte, ammonia was synthesized from nitrogen and hydrogen at atmospheric pressure in the solid states proton conducting cell reactor by electrochemical methods, which directly evidenced the protonic conduction in those oxides at intermediate temperature. The rate of evolution of ammonia in Ce_0.8M_0.2O_2−δ (M = La, Y, Gd, Sm) is up to 7.2 × 10^− 9, 7.5 × 10^− 9, 7.7 × 10^− 9, 8.2 × 10^− 9 mol s^− 1 cm^− 2, respectively.     

Titanium oxide thin layers deposed by dip-coating method: Their optical and structural properties

TiO₂ thin films were prepared by sol-gel method. The structural investigations performed by means of X-ray diffraction (XRD) technique and scanning electron microscopy (SEM) showed the shape structure at T = 600 °C. The optical constants of the deposited film were obtained from the analysis of the experimentally recorded transmittance spectral data in the wavelength of 200–3000 nm range. The values of some important parameters of the studied films are determined, such as refractive index n and thickness d. In this work, using the transmission spectra, we have calculated the dielectric constant (ε_∞) for four layered TiO₂ films; a simple relation is suggested to estimate the third-order optical nonlinear susceptibility χ⁽³⁾. It has been found that the dispersion data obeyed the single oscillator of the Wemple–DiDomenico model, from which the dispersion parameters and high-frequency dielectric constant were determined. The estimations of the corresponding band gap E_g, χ⁽³⁾ and ε_∞ are 2.57 eV, 0.021 · 10⁻¹⁰ esu and 5.20, respectively.     

Interfacial energies of carbon tetrabromide

The equilibrated grain boundary groove shapes for solid carbon tetrabromide (CTB) in equilibrium with its melt were directly observed by using a horizontal temperature gradient stage. From the observed grain boundary groove shapes, Gibbs–Thomson coefficient (Γ) and solid–liquid interfacial energy (σ_SL) and grain boundary energy (σ_gb) of CTB have been determined to be (7.88 ± 0.8) × 10⁻⁸ K m, (6.91 ± 1.04) × 10⁻³ J m⁻² and (13.43 ± 2.28) × 10⁻³ J m⁻², respectively. The ratio of thermal conductivity of equilibrated liquid phase to solid phase for CTB has also been measured to be 0.90 at its melting temperature. The value of σ_SL for CTB obtained in present work was compared with the values of σ_SL determined in the previous works for same material and it was seen that the present result is in good agreement with previous works.     

Anomalous high salt conductivity in primary diamines as solvents

It is shown that the conductivities of LiBF₄, LiPF₆, LiN(SO₂CF₃)₂ (LiTFSI), NaPF₆, KPF are abnormally high in two diamine solvents: ethylenediamine (EDA) and 1,3-diaminopropane (1,3 DAP). This is particularly evident for KPF₆, κ_MAX(EDA) = 35 mS cm^− 1 and κ_MAX(1,3 DAP) = 17.4 mS cm^− 1. Compared to three other organic solvents having the same viscosity, η ≅ 1.6 cP, but higher relative permittivity, NMF ε = 186.9, NMP ε = 32, γ-Bu ε = 39.1, the maxima of conductibility of EDA and 1,2 DAP, which have a low relative permittivity, ε ≅ 13–11, are largely superior or equal to those of NMF, NMP, γ-Bu. For KPF₆, κ_MAX(NMF) = 15.4mS cm^− 1, κ_MAX(NMP) = 7.8 mS cm^− 1 and κ_MAX(γ-BL) = 10.8 mS cm^− 1. We assume that this is due to a non-Stokesian conductivity mechanism.     

Mixed conductivity,stability and thermomechanical properties of Ni-doped La(Ga,Mg)O3−δ

Perovskite-type LaGa_0.65Mg_0.15Ni_0.20O_3−δ exhibiting oxygen transport comparable to that in K₂NiF₄-type nickelates was characterized as a model material for ceramic membrane reactors, employing mechanical tests, dilatometry, oxygen permeability and faradaic efficiency measurements, thermogravimetry (TG), and determination of the total conductivity and Seebeck coefficient in the oxygen partial pressure range from 10^− 15 Pa to 40 kPa. Within the phase stability domain which is similar to La₂NiO_4+δ, the defect chemistry of LaGa_0.65Mg_0.15Ni_0.20O_3−δ can be adequately described by the ideal solution model with oxygen vacancies and electron holes to be the only mobile defects, assuming that Ni²⁺ may provide two energetically equivalent sites for hole location. This assumption is in agreement with the density of states, estimated from thermopower, and the coulometric titration and TG data suggesting Ni⁴⁺ formation in air at T < 1150 K. The hole conductivity prevailing under oxidizing conditions occurs via small-polaron mechanism as indicated by relatively low, temperature-activated mobility. The ionic transport increases with vacancy concentration on reducing p(O₂) and becomes dominant at oxygen pressures below 10^− 7–10^− 5 Pa. The average thermal expansion coefficients in air are 11.9 × 10^− 6 and 18.4 × 10^− 6 K^− 1 at 370–850 and 850–1270 K, respectively. The chemical strain of LaGa_0.65Mg_0.15Ni_0.20O_3−δ ceramics at 1073–1123 K, induced by the oxygen partial pressure variations, is substantially lower compared to perovskite ferrites. The flexural strength determined by 3-point and 4-point bending tests is 167–189 MPa at room temperature and 85–97 MPa at 773–1173 K. The mechanical properties are almost independent of temperature and oxygen pressure at p(O₂) = 1–2.1 × 10⁴ Pa and 773–1173 K.     

Aδ-doped In0.24Ga0.76As/GaAs pseudomorphic high electron mobility transistor using a graded superlattice spacer

A new δ -doped In_0.24Ga_0.76As/GaAs pseudomorphic high electron mobility transistor (HEMT) using a graded superlattice spacer grown by molecular beam epitaxy (MBE) has been successfully fabricated and investigated. The present device structure demonstrated a more than 40% enhancement of electron mobility and 20% higher product value of electron mobility and two-dimensional electron gas (2DEG) concentration than those of the conventional HEMT with single undoped spacer under the same growth specifications. Superior device characteristics were achieved by employing the thickness-graded superlattice spacer to accommodate the lattice-mismatch-induced strain and to improve the interfacial quality. For a gate length of 1 μ m, the maximum drain-to-source saturation current density and extrinsic transconductance of the present HEMT design are 165 mA mm ^− 1and 107 mS mm ^− 1, respectively, at room temperature.     

Transport and phase dynamics of poly(vinyl pyrrolidone) doped plastically crystalline N-methyl-N-propylpyrrolidinium tetrafluoroborate

The plastic crystal phase forming N-methyl-N-propylpyrrolidinium tetrafluoroborate organic salt (P₁₃BF₄) was combined with 2, 5 and 10 wt.% poly(vinyl pyrrolidone) (PVP). The ternary 2 wt.% PVP/2 wt.% LiBF₄/P₁₃BF₄ was also investigated. Thermal analysis, conductivity, optical thermomicroscopy, and Nuclear Magnetic Resonance (¹¹B, ¹⁹F, ¹H, ⁷Li) were used to probe the fundamental transport processes. Both the onset of phase I and the final melting temperature were reduced with increasing additions of PVP. Conductivity in phase I was 2.6 × 10^− 4 S cm^− 1 5.2 × 10^− 4 S cm^− 1 1.1 × 10^− 4 S cm^− 1 and 3.9 × 10^− 5 S cm^− 1 for 0, 2, 5 and 10 wt.%PVP/P₁₃BF₄, respectively. Doping with 2 wt.% LiBF₄ increased the conductivity by up to an order of magnitude in phase II. Further additions of 2 wt.% PVP slightly reduced the conductivity, although it remained higher than for pure P₁₃BF₄.     

Structure,stability and electrical properties of the La(2−x)SrxMnO4±δ solid solution series

Single phase materials of the La_(2−x)Sr_xMnO_4±δ (0.6 ≤ x ≤ 2.0) solid solution series were prepared via solid state reaction. The structure of each material was examined at room temperature and determined to be tetragonal for all phases examined. An expansion in lattice volume was observed on increasing lanthanum content. The stability and thermal expansion of each member of the solid solution series was determined via the use of in situ high temperature X-ray diffraction. It was found that all materials remained stable up to a temperature of 800 °C. Thermal expansion coefficients were found to be in the region of 15 × 10^− 6 K^− 1 for La_(2−x)Sr_xMnO_4±δ compounds where x > 1.4. The electrical conductivity of each phase was also determined over a similar temperature range with a maximum value of ∼6 Scm^− 1 at 900 °C for the x = 1.8 phase.