Anisotropic low-temperature in-plane magnetoresistance in electron doped Nd<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>CuO<Subscript>4+δ</Subscript>

Nominally electron doped antiferromagnetic tetragonal nonsuperconducting Nd_2?xCe _x CuO_4+δ(x=0.12) has been shown to manifest strong angular dependence of the in-plane magnetoresistance on the orientation of the external magnetic field within the ab plane in many aspects similar to that observed in hole doped YBa₂Cu₃O_7?δ and La_2?xSr_xCuO₄. Specific fourfold angular magnetoresistance anisotropy amounting to several percents was observed in oxygen annealed films at low temperatures and in an external magnetic field up to 5.5 T. The strong temperature dependence and fourfold symmetry observed in our sample points to a specific role of rare-earth (Nd) ions in magnetoresistance anisotropy. At low temperature T = 1.4 K, we observed the unusual transformation of magnetoresistance response with increasing the external magnetic field, which seems to be a manifestation of a combined effect of a crossover between first and second order spin-flop transitions and a field-dependent rare-earth contribution to quasiparticle magnetotransport.     

Field Confinement Energy at a Nonlinear Interface between Nonlinear Defocusing Media

The dependences of the resistance of the layered quasi-one-dimensional semiconductor TiS₃ on the direction and magnitude of the magnetic field B have been measured. The anisotropy and angular dependences of the magnetoresistance indicate the two-dimensional character of the conductivity at T < 100 K. Below T₀ ≈ 50 K, the magnetoresistance for the directions of the field in the plane of the layers (ab plane) increases sharply, whereas the transverse magnetoresistance (B ∥ c) becomes negative. The results confirm the possibility of an electron phase transition to a collective state at T₀. The negative magnetoresistance (at B ∥ c) below T₀ is explained by the magnetic-field-induced suppression of two-dimensional weak localization. The positive magnetoresistance (at B ∥ ab) is explained by the effect of the magnetic field on the spectrum of electronic states.     

Size Dependences of the Magnetic Properties of Superconducting Lead–Porous Glass Nanostructures

Superconducting structures Pb–PG formed by filling a porous glass matrix with the lead from melt under pressure have been investigated. Samples with characteristic pore structure diameters of d ≈ 7, 3, and 2 nm have been studied. It has been found that the critical temperature of the superconducting transition in the samples under study is similar to the corresponding value T_c ≈ 7.2 K for bulk lead. At the same time, it has been observed that the critical magnetic field of the nanocomposites, which attains H_c(T = 0 K) ≈ 165 kOe for Pb–PG (3 nm), exceeds several times the value H_c(0) = 803 Oe for bulk lead. The low-temperature magnetic- field dependences of magnetic moment M(H) contain quasi-periodic flux jumps, which vanish with a decrease in the lead nanostructure diameter. A qualitative model of the observed effects is considered.     

Magnetic and transport properties of colossal magnetoresistance compound EuB<Subscript>6</Subscript>

The galvanomagnetic and magnetic properties of EuB₆ single crystal have been measured over wide temperature (1.8–300 K) and magnetic-field (up to 70 kOe) ranges, and the parameters of charge carriers and the characteristics of the magnetic subsystem are estimated in the paramagnetic and ferromagnetic (T < T _C ≈ 13.9 K) phases of this compound with strong electron correlations. In the temperature range T < T* ≈ 80 K, a magnetoresistance hysteresis Δρ(H)/ρ(0) is detected; it reaches a maximum amplitude of about 5% at T ≈ 12 K. The anomalies of charge transport observed in the temperature range T _C < T < T* are shown to be related to the magnetic scattering of charge carriers (m _eff = (15–30)m ₀, where m ₀ is the free-electron mass) that results from a short-range magnetic order appearing upon the formation of ferromagnetic nanoregions (ferrons).     

Inverse magnetoresistance in (FeCoB)-(Al<Subscript>2</Subscript>O<Subscript>3</Subscript>) magnetic granular composites

The magnetoresistance, magnetization, and microstructure of granular composites with the general formula (Fe₄₀Co₄₀B₂₀)_x(Al₂O₃)_100?x were studied for contents of the amorphous metallic component both above and below the percolation threshold (x≈43). The low-temperature transverse magnetoresistance of the composites is negative at x=41 and practically zero for x=49. For metal contents below the percolation threshold (x=31), a noticeable (7–8%) positive magnetoresistance, reached in magnetic fields of about 17 kOe, was observed. Possible mechanisms of the generation of inverse (positive) magnetoresistance are discussed.     

Phase transition in the vortex structure of granular YBa<Subscript>2</Subscript>Cu<Subscript>3</Subscript>O<Subscript>7 − δ</Subscript> HTSCs in weak magnetic fields

This study aims at establishing the interrelation between the current-carrying capacity and peculiarities of magnetoresistance of granular YBa₂Cu₃O_{7 ? δ} HTSCs (T _c = 92.5 K). The transverse magnetoresistance of several batches of YBa₂Cu₃O_{7 ? δ} HTSC samples with noticeably different values of critical supercurrent density j _c is measured in magnetic fields H _ext up to H _ext ^max ≈ 500 Oe in a wide range of transport currents (5 mA ≤ I ≤ 1600 mA) at T = 77.4 K. Samples with relatively high values of j _c (H _ext = 0) ≥ 100 A/cm² do not exhibit any anomalies in their field dependences. Magnetoresistance jumps δρ_BG-VG/ρ_273K are observed for samples with low values of j _c ≥ 20 A/cm² in fields H _BG-VG ≈ 200–260 Oe. The width ΔH _BG-VG of the anomalous resistance region increases upon an increase in I. The magnetoresistance jumps decrease with increasing I in increasing field H _ext(0 → H _ext ^max ) and increase in decreasing field H _ext(H _ext ^max → 0). It is found that these peculiarities of the field dependences of magnetoresistance are associated with a first-order phase transition (in magnetic field) in the vortex structure of YBa₂Cu₃O_{7 ? δ} HTSCs of the Bragg glass-vortex glass type.     

Intercluster conduction in lightly doped La<Subscript>1 − <Emphasis Type="Italic">x</Emphasis></Subscript>Ca<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites in the paramagnetic temperature range

The magnetotransport and magnetic properties of La _{1 ? x} Ca _x MnO₃ polycrystalline samples (x = 0–0.3) annealed under vacuum and in the oxygen environment are investigated in the temperature range from 77 to 400 K. The magnetic studies of lightly doped manganites reveal persistence of short-range magnetic order up to a temperature T* ≈ 300 K, which is about 2–3 times higher than their Curie temperature T _C. The temperature dependence of the electrical resistivity measured from T* down to nearly T ≈ T _C is fitted by the relation logρ ～ T ^?1/2, which is characteristic of granular metals with electrons tunneling among nanoclusters of magnetic metals embedded in a dielectric host. The magnetoresistance of polycrystalline samples annealed in the oxygen environment has been observed to increase. The electrical, magnetic, and magnetotransport properties of the manganites can be accounted for by the formation of magnetic nanoclusters below T*, tunneling (or hopping) of carriers among the nanoclusters, variation in the magnetic cluster size, and tunneling barrier thickness with variations in temperature and magnetic field strength, as well as by the effect of annealing in different media on the cluster properties.     

Zero differential resistance of a two-dimensional electron gas in a one-dimensional periodic potential at high filling factors

The nonlinear magnetotransport of a two-dimensional (2D) electron gas in one-dimensional lateral superlattices based on a selectively doped GaAs/AlAs heterostructure is studied. The one-dimensional potential modulation of the 2D electron gas is performed by means of a series of metallic strips formed on the surface of a heterostructure with the use of electron beam lithography and a lift-off process. The dependence of the differential resistance r_xx on the magnetic field B < 1.5T in superlattices with the period a = 400 nm at a temperature of T = 4.2 K is investigated. It is found that electronic states with r_xx ≈ 0 appear in one-dimensional lateral superlattices in crossed electric and magnetic fields. It is shown that states with r_xx ≈ 0 in 2D electronic systems with one-dimensional periodic modulation arise at the minima of commensurability oscillations of the magnetoresistance.     

Unexpected negative nonmonotonic magnetoresistance of the two-dimensional electrons in Si in a parallel magnetic field

We report observation of the unexpected negative and nonmonotonic magnetoresistance of 2D electrons in Si-MOSFET subjected to a varying in-plane magnetic field superimposed on a constant perpendicular field component. We show that this nonmonotonic magnetoresistance is irrelevant to the energy spectrum of mobile 2D electrons. We also observed variations of the density of mobile electrons with the in-plane field. We argue that both variations of the negative magnetoresistance and of the density of mobile electrons originate from the band of localized states. The latter coexist and interact with mobile electrons even at relatively high density, a factor of 1.5 higher than the critical density of the apparent metal-insulator transition.     

Anomalous Hall effect and ferromagnetism in the new diluted magnetic semiconductor Sb<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>x</Subscript>Te<Subscript>3</Subscript>

The magnetic and galvanomagnetic properties of single crystals of the new diluted magnetic semiconductor p-Sb_2?xCr_xTe₃ (0 ≤ x ≤ 0.02) have been studied in the temperature range 1.7–300 K. A ferromagnetic phase with the Curie temperature T_c ≈ 5.8 K and the maximum Cr content x = 0.0215 has been revealed. The easy magnetization axis is parallel to the C₃ crystallographic axis. In the presence of strong magnetic fields, the Shubnikov-de Haas effect has been observed. Analysis of this effect shows that doping with chrome reduces the concentration of holes. Negative magnetoresistance and the anomalous Hall effect are observed at liquid helium temperature.     

Magnetoresistance of La<Subscript>0.67</Subscript>Sr<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films grown on a substrate with low lattice mismatch

The structure, electrical resistivity, and magnetoresistance of La_0.67Sr_0.33MnO₃ heteroepitaxial films (120-nm thick) practically unstrained by lattice mismatch with the substrate were studied. A strong maximum of negative magnetoresistance of ≈27% (for μ₀H = 4 T) was observed at T ≈360 K. While the magnetoresistance decreased monotonically in magnitude with decreasing temperature, it was still in excess of 2% at 150 K. For T < 250 K, the temperature dependence of the electrical resistivity ρ of La_0.67Sr_0.33MnO₃ films is fitted well by the relation ρ = ρ₀ + ρ ₁(H)T^2.3, where ρ₀ = 1.1×10^?4 Ω cm, ρ₁(H = 0) = 1.8×10^?9 Ω cm/K^2.3, and ρ₁(μ₀H = 4 T)/ρ₁(H = 0) ≈0.96. The temperature dependence of a parameter γ characterizing the extent to which the electrical resistivity of the ferromagnetic phase of La_0.67Sr_0.33MnO₃ films is suppressed by a magnetic field (μ ₀H = 5 T) was determined.     

Electrical resistivity and magnetotransport properties of La<Subscript>0.67</Subscript>Ba<Subscript>0.33</Subscript>MnO<Subscript>3</Subscript> epitaxial films biaxially compressed by the substrate

The structure, electrical resistivity, and magnetoresistance of La_0.67Ba_0.33MnO₃(20 nm) films grown coherently on an La_0.3Sr_0.7Al_0.65Ta_0.35O₃(001) substrate with a lattice misfit of about 1% were studied. The rigid connection of the manganite layer with the bulk substrate brought about the unit cell distortion of the substrate (a _⊥/a _‖ = 1.02) and a decrease in the unit cell volume as compared to that of the corresponding bulk crystals (a _‖ and a _⊥ are the unit cell parameters measured in the substrate plane and along the surface normal, respectively). The temperature T _M ≈ 295 K, at which the electrical resistivity ρ of the (20 nm)La_0.67Ba_0.33MnO₃ films reached a maximum, was 40–45 K lower than that for the corresponding bulk crystals. The negative magnetoresistance (MR ≈ ?0.25 for μ₀ H = 1 T) attained a peak value at T _MR ≈ 270 K. The response of ρ to a magnetic field depended substantially on the angle between the current flow in the film and the direction of the magnetic field.     

Ferromagnetism in a new dilute magnetic semiconductor Sb<Subscript>2−<Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript>x</Subscript>Te<Subscript>3</Subscript>

Magnetic and galvanomagnetic properties of single crystals of a new dilute magnetic semiconductor p-Sb_2?xCr_xTe₃ (x = 0, 0.0115, 0.0215) are investigated in a temperature range of 1.7–300 K. A ferromagnetic phase with a Curie temperature of T_C ≈ 5.8 (x = 0.0215) and 2.0 K (x = 0.0115) is detected. The easy magnetization axis is parallel to the C₃ crystallographic axis. Analysis of the Shubnikov-de Haas effect observed in these crystals in strong magnetic fields leads to the conclusion that the hole concentration decreases as a result of doping with Cr. Negative magnetoresistance and the anomalous Hall effect are observed in Cr-doped samples at liquid helium temperature.     

Exact-exchange density functional theory of the integer quantum Hall effect: strict 2D limit

A strict bidimensional (strict-2D) exact-exchange (EE) formalism within the framework of density-functional theory (DFT) has been developed and applied to the case of an electron gas subjected to a strong perpendicular magnetic field, that drives the system to the regime of the integer quantum Hall effect (IQHE). As the filling of the emerging Landau levels proceeds, two main features results: i) the EE energy minimizes with a discontinuous derivative at every integer filling factor ν; and ii) the EE potential display sharp discontinuities at every integer ν. The present contribution provides a natural improvement as compared with the widely used local-spin-density approximation (LSDA), since the EE energy functional fully contains the effect of the magnetic field, and includes an inter-layer exchange coupling for multilayer systems. As a consistency test, the LSDA is derived as the leading term of a low-field expansion of the EE energy and potential.     

Effect of bias voltage polarity of a substrate on the texture,microstructure, and magnetic properties of Ni films prepared by magnetron sputtering

The influence of the bias voltage polarity U_s on microstructure, crystallographic texture and magnetic properties has been investigated for Ni films with a thickness of ≈15–420 nm, which are obtained via magnetron sputtering at a working gas pressure P corresponding to the collision-deficient flight mode of atoms of the sputtered target between the target and the substrate. The Ni(111)-textured films have been shown to form at U_s ≈–100 V, whose microstructure and magnetic parameters are almost unchanged with a thickness. In contrast, the Ni(200) films are formed at U_s ≈ +100 V, whose magnetic properties and micro-structure depend significantly on the thickness d that manifests in a critical thickness d* ≈ 150 nm, when the structure of the film becomes inhomogeneous in the thickness, the remagnetization loops are changed from rectangular to supercritical with the formation of the band domain structure.     

Improved Scaling of the Magnetic Heat Capacity in La<Subscript>0.85</Subscript>Ag<Subscript>0.15</Subscript>MnO<Subscript>3</Subscript> Manganite

The heat capacity in a La_0.8 Ag_0.15 MnO₃ manganite has been measured near the Curie temperature T _C in applied magnetic fields up to 26 kOe to study the scaling critical behavior and to obtain the universality class. The conventional scaling fails in application to the manganites with a hysteresis and the strong sensitivity of T _C to a magnetic field. However, the application of the improved scaling procedure designed by us allows yielding the good scaling the magnetic heat =0.23 capacity in La_0.85Ag_0.15MnO₃, which may belong to a new universality class for systems with the strong spin-orbital coupling of t _2g -electrons, namely, double -Heisenberg with the critical exponent of the heat capacity α = ?0.23 and the critical exponent of the correlation radius v=0.7433. This new universality class is consistent with the crystal, magnetic and orbital symmetries for the La_0.85Ag_0.15MnO₃. Scaling failure in the vicinity of T _C in the range of t/H ^1/2ν ≈ [?0.033;0.024] is understood by finite-size and other disordering effects when T →T _C. It is remarkable that finite-size effect is consistent with grain size, L ≈ 50 μm, in the La_0.85Ag_0.15MnO₃. The correlation radius, Lt ^ν ≈ 30.28 Å, estimated from the finite-size effect is of the same order of magnitude with the sizes of the ferromagnetic fluctuations and drops in manganites.     

Thermoelectric properties and ferromagnetism of diluted magnetic semiconductors Sb<Subscript>2 − <Emphasis Type="Italic">x</Emphasis></Subscript>Cr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te<Subscript>3</Subscript>

Thermoelectric properties of single crystals of a new dilute magnetic semiconductor p-Sb_{2 ? x} Cr _x Te₃ are studied in the temperature interval 7–300 K. The temperature dependences of the thermal conductivity are measured. The Seebeck coefficient S is found to increase upon doping with Cr. At low temperatures, a ferromagnetic phase with Curie temperature T _C ≈ 5.8 K exists for a Cr concentration x = 0.0215, its easy magnetization axis being parallel to the crystallographic axis C ₃. At T = 4.2 K, a negative magnetoresistance and anomalous Hall effect are observed; in strong magnetic fields, the Shubnikov-de Haas effect is manifested.     

Conductivity of Ce<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Sr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>MnO<Subscript>3</Subscript> manganites in a magnetic field within the temperature range 78–300 K

The electrical conductivity of the family of Ce _x Sr_1?x MnO₃ (x = 0.50, 0.67) alloys is studied in magnetic fields of up to 0.6 T in the temperature range 78–300 K. The semiconductor-metal phase transition is observed in unannealed samples with x = 0.5 and in both annealed and unannealed samples with x = 0.67. All samples exhibit giant negative magnetoresistance. The temperature dependence of the giant negative magnetoresistance effect, the dependence of the electrical resistivity on the magnetic field at 78 K, and the time dependence of the magnetoresistance at 78 K are measured for the first time. Some samples reveal the properties of spin glass and strong ferromagnets. The reproducibility of the data obtained for these samples depends on the prehistory of the samples, specifically on the conditions of annealing and exposure to a magnetic field.     

Spin-polaron transport and magnetic phase diagram of iron monosilicide

The study of galvanomagnetic, magnetic, and magnetooptical characteristics of iron monosilicide in a wide range of temperatures (1.8–40 K) and magnetic fields (up to 120 kOe) has revealed the origin of the low-temperature sign reversal of the Hall coefficient in FeSi. It is shown that this effect is associated with an increase in the amplitude of the anomalous component of the Hall resistance ρ_H (the amplitude increases by more than five orders of magnitude with decreasing temperature in the range 1.8–20 K). The emergence of the anomalous contribution to ρ_H is attributed to the transition from the spin-polaron to coherent regime of electron density fluctuations in the vicinity of Fe centers and to the formation of nanosize ferromagnetic regions, i.e., ferrons (about 10 Å in diameter), in the FeSi matrix at T<T_C=15 K. An additional contribution to the Hall effect, which is observed near the temperature of sign reversal of ρ_H and is manifested as the second harmonic in the angular dependences ρ_H(?), cannot be explained in the framework of traditional phenomenological models. Analysis of magnetoresistance of FeSi in the spin-polaron and coherent spin fluctuation modes shows that the sign reversal of the ratio Δρ(H)/ρ accompanied by a transition from a positive (Δρ /ρ>0, T>T_m) to a negative (Δρ/ρ<0, T<T_m) magnetoresistance is observed in the immediate vicinity of the mictomagnetic phase boundary at T_m=7 K. The linear asymptotic form of the negative magnetoresistance Δρ/ρ ∝?H in weak magnetic fields up to 10 kOe is explained by the formation of magnetic nanoclusters from interacting ferrons in the mictomagnetic phase of FeSi at T<T_m. The results are used for constructing for the first time the low-temperature magnetic phase diagram of FeSi. The effects of exchange enhancement are estimated quantitatively and the effective parameters characterizing the electron subsystem in the paramagnetic (T>T_C), ferromagnetic (T_m<T< T_C), and mictomagnetic (T<T_m) phases are determined. Analysis of anomalies in the aggregate of transport, magnetic, and magnetooptical characteristics observed in the vicinity of H_m≈35 kOe at T<T_m leads to the conclusion that a new collinear magnetic phase with M∥H exists on the low-temperature phase diagram of iron monosilicide.     

Positive magnetoresistance effect in rare earth cobaltites

The structure, magnetic, and magnetotransport properties of the Pr_0.5Sr_0.5Co_{1 ? x} Fe _x O₃ system have been studied. The ferromagnet-spin glass (x = 0.5)-G-type antiferromagnet (x = 0.7) transitions and the metal—insulator transitions (x = 0.25) have been revealed. It has been established that the magnetoresistance of the metallic ferromagnetic cobaltites changes sign from positive to negative as the external magnetic field increases. The positive component increases and the negative component decreases with decreasing temperature. The negative magnetoresistance increases sharply in the insulating spinglass phase. Possible causes of the low-magnetic-field positive magnetoresistance in the rare earth metallic cobaltites are discussed.