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1.
High-quality colloidal CdTe quantum wires having purposefully controlled diameters in the range 5-11 nm are grown by the solution-liquid-solid (SLS) method, using Bi nanoparticle catalysts, cadmium octadecylphosphonate and trioctylphosphine telluride as precursors, and a TOPO solvent. The wires adopt the wurtzite structure and grow along the [002] direction (parallel to the c axis). The size dependence of the effective band gaps in the wires is determined from the absorption spectra and compared to the experimental results for high-quality CdTe quantum dots. In contrast to the predictions of an effective-mass approximation, particle-in-a-box model, and previous experimental results from CdSe and InP dot-wire comparisons, the effective band gaps of CdTe dots and wires of like diameter are found to be experimentally indistinguishable. The present results are analyzed using density functional theory under the local-density approximation by implementing a charge-patching method. The higher-level theoretical analysis finds the general existence of a threshold diameter, above which dot and wire effective band gaps converge. The origin and magnitude of this threshold diameter are discussed.  相似文献   

2.
Colloidal InP quantum rods (QRs) having controlled diameters and lengths are grown by the solution-liquid-solid method, from Bi nanoparticles in the presence of hexadecylamine and other conventional quantum dot surfactants. These quantum rods show band-edge photoluminescence after HF photochemical etching. Photoluminescence efficiency is further enhanced after the Bi tips are selectively removed from the QRs by oleic acid etching. The QRs are anisotropically 3D confined, the nature of which is compared to the corresponding isotropic 3D confinement in quantum dots and 2D confinement in quantum wires. The 3D-2D rod-wire transition length is experimentally determined to be 25 nm, which is about 2 times the bulk InP exciton Bohr radius (of approximately 11 nm).  相似文献   

3.
Soluble CdSe quantum wires are prepared by the solution-liquid-solid mechanism, using monodisperse bismith nanoparticles to catalyze wire growth. The quantum wires have micrometer lengths, diameters in the range of 5-20 nm, and diameter distributions of +/-10-20%. Spectroscopically determined wire band gaps compare closely to those calculated by the semiemipirical pseudopotential method, confirming 2D quantum confinement. The diameter dependence of the quantum wire band gaps is compared to that of CdSe quantum dots and rods. Quantum rod band gaps are shown to be delimited by the band gaps of dots and wires of like diameter, for short and long rods, respectively. The experimental data suggest that a length of ca. 30 nm is required for the third dimension of quantum confinement to fully vanish in CdSe rods. That length is about six times the bulk CdSe exciton Bohr radius.  相似文献   

4.
As-grown single-crystal InP nanowires, covered with a surface oxide, show a photoluminescence efficiency that strongly varies from wire to wire. We show that the luminescence efficiency of single-crystal InP nanowires can be improved by photoassisted wet chemical etching in a butanol solution containing HF and the indium-coordinating ligand trioctylphosphine oxide. Electron-hole photogeneration, electron scavenging, and oxidative dissolution combined with surface passivation by the indium-coordinating ligand are essential elements to improve the luminescence efficiency. Time traces of the luminescence of surface-passivated wires show strong oscillations resembling the on-off blinking observed with single quantum dots. These results reflect the strong influence of a single or a few nonradiative recombination center(s) on the luminescence properties of an entire wire.  相似文献   

5.
Colloidal GaAs quantum wires with diameters of 5-11 nm and narrow diameter distributions (standard deviation = 12-21% of the mean diameter) are grown by two methods based on the solution-liquid-solid (SLS) mechanism. Resolved excitonic absorption features arising from GaAs quantum wires are detected, allowing extraction of the size-dependent effective band gaps of the wires. The results allow the first systematic comparison of the size dependences of the effective band gaps in corresponding sets of semiconductor quantum wires and quantum wells. The GaAs quantum wire and well band gaps scale according to the prediction of a simple effective-mass-approximation, particle-in-a-box (EMA-PIB) model, which estimates the kinetic confinement energies of electron-hole pairs in quantum nanostructures of different shapes and confinement dimensionalities.  相似文献   

6.
Analytical transmission electron microscopy was applied to characterize the size, shape, real structure, and, in particular, the composition of different semiconductor quantum structures. Its potential applicability is demonstrated for heterostructures of III-V semiconducting materials and II-VI ones, viz. (In,Ga)As quantum wires on InP and (In,Ga)As quantum dots on GaAs both grown by metal organic chemical vapor deposition, and CdSe quantum dots on ZnSe grown by molecular beam epitaxy. The investigations carried out show that the element distribution even of some atomic layers can be detected by energy-dispersive X-ray spectroscopy, however, exhibiting a smeared profile. Contrary to that, sub-nanometre resolution has been achieved by using energy-filtered transmission electron microscopy to image quantum dot structures.  相似文献   

7.
Type-II band engineered quantum dots (CdTe/CdSe(core/shell) and CdSe/ZnTe(core/shell) heterostructures) are described. The optical properties of these type-II quantum dots are studied in parallel with their type-I counterparts. We demonstrate that the spatial distribution of carriers can be controlled within the type-II quantum dots, which makes their properties strongly governed by the band offset of the comprising materials. This allows access to optical transition energies that are not restricted to band gap energies. The type-II quantum dots reported here can emit at lower energies than the band gaps of comprising materials. The type-II emission can be tailored by the shell thickness as well as the core size. The enhanced control over carrier distribution afforded by these type-II materials may prove useful for many applications, such as photovoltaics and photoconduction devices.  相似文献   

8.
Time-dependent photoluminescence (PL) enhancement, blue shift, and photobleach were observed from the thiol-capped CdTe quantum dots (QDs) ingested in mouse myoblast cells and human primary liver cancer cells. It was revealed that the PL blue shift resulted from the photooxidation of the QD core by singlet oxygen molecules formed on the QD core surface.  相似文献   

9.
In this communication we discuss the possibility of hole transfer between a photoexcited semiconductor quantum dot and a pi-conjugated polymer. This charge-transfer event will be investigated (exploited) on the basis of its implication toward a solar energy conversion scheme. Experimentally, we show that the steady-state photoluminescence (PL) of a solution of InP quantum dots is quenched by the introduction of solvated poly(3-hexylthiophene). Time-resolved PL experiments on these solutions are also presented. It was observed that the PL transients did not significantly change upon the addition of the conductive polymer. These new results indicate that said PL quenching is static in nature. This suggests that in solution, the quantum dot and the polymer exhibit a strong intermolecular interaction. As the two species encounter each other through diffusion, the polymer quenches the quantum dot photoluminescence without altering the population's PL lifetime. This new evidence suggests that the polymer and the quantum dot form a relatively stable complex.  相似文献   

10.
Nearly monodispersed CdSe quantum dots have been prepared by a soft solution approach using air-stable reagents at lower temperature. The temporal evolution of the absorption and room temperature photoluminescence spectra were used to follow the reaction process and to characterize the optical properties of as-prepared CdSe quantum dots. The results exhibited clear exciton peaks in absorption and bright band-edge luminescence. The structures of the CdSe nanocrystals were determined by X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The influence of the temperature on the properties of the resultant CdSe nanocrystals was investigated. The distribution of properties within ensembles of CdSe nanocrystals was also studied. A drastic difference in the photoluminescence efficiencies of size-selected fractions was observed.  相似文献   

11.
The process and mechanism of photochemical instability of thiol-capped CdTe quantum dots (QDs) in aqueous solution were experimentally studied. After laser irradiation, the corresponding Raman bands of the Cd-S bond decreased obviously, indicating bond breaking and thiol detachment from the QD surfaces. Meanwhile, a photoinduced aggregation of QDs occurred with the hydrodynamic diameter increased to hundreds of nanometers from an initial 20 nm, as detected with dynamic light scattering measurements. The bleaching of the photoluminescence of QDs under laser irradiation could be attributed to the enhanced nonradiative transfer in excited QDs caused by increased surface defects due to the losing of thiol ligands. Singlet oxygen (1O2) was involved in the photooxidation of QDs, as revealed by the inhibiting effects of 1O2 quenchers of histidine or sodium azide (NaN3) on the photobleaching of QDs. The linear relationship in Stern-Volmer measurements between the terminal product and the concentration of NaN3 demonstrated that 1O2 was the main pathway of the photobleaching in QD solutions. By comparing the photostability of QDs in C2C12 cells with and without NaN3 treatment, the photooxidation effect of 1O2 on photobleaching of cellular QDs was confirmed.  相似文献   

12.
The effect of solvent on the photoluminescence of cadmium selenide quantum dots stabilized by oleic acid is examined with the example of two organic solvents: toluene and THF. It is found that THF favors desorption of ligands and formation of surface defects to a greater extent than toluene; as a result, the maximum of the photoluminescence band shifts to the red spectral region and its intensity decreases. The addition of polymers to the solution of quantum dots causes changes in the efficiency of photoluminescence and in the kinetics of its quenching. In the range of low concentrations (≤2 wt %) of quantum dots in polymer solutions, the intensity of luminescence first grows and then passes through a maximum and decreases. This effect may be explained both by the increasing number of surface defects and by quenching via energy transfer to polymers, especially in the case of polymers containing aromatic groups.  相似文献   

13.
本文采用热注入法合成了以油胺/油酸为表面配体的、粒径均一的CdSe量子点(CdSe QDs)。调节表面配体交换中辛硫醇与CdSe QDs的比例,研究了表面配体对CdSe QDs光致发光及电致化学发光性质的影响,并提出了CdSe QDs的发光模型。结果表明,辛硫醇表面配体显著影响CdSe QDs的带边发射和深能级陷阱发射,因而导致CdSe QDs光致发光强度的显著降低,以及电致化学发光强度的增加。上述结果为进一步提高量子点的发光性能提供了依据。  相似文献   

14.
Efficient visible photoluminescence of porous Si is observed on highly porous material, which is currently attributed to quantum confinement effects of the carrier in nanometric sized silicon wires or dots. In this work, the growth of porous silicon layer has been monitored using electrochemical impedance technique.  相似文献   

15.
Tri(pyrazolyl)phosphanes ( 5 R1,R2) are utilized as an alternative, cheap and low‐toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long‐term stable stock solutions (>6 months) of P(OLA)3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA)3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530–620 nm and photoluminescence quantum yields (PL QYs) between 51–62 %. A proof‐of‐concept white light‐emitting diode (LED) applying the InP/ZnS QDs as a color‐conversion layer was built to demonstrate their applicability and processibility.  相似文献   

16.
We present a fully continuous chip microreactor‐based multistage platform for the synthesis of quantum dots with heterostructures. The use of custom‐designed chip reactors enables precise control of heating profiles and flow distribution across the microfluidic channels while conducting multistep reactions. The platform can be easily reconfigured by reconnecting the differently designed chip reactors allowing for screening of various reaction parameters during the synthesis of nanocrystals. III–V core/shell quantum dots are chosen as model reaction systems, including InP/ZnS, InP/ZnSe, InP/CdS and InAs/InP, which are prepared in flow using a maximum of six chip reactors in series.  相似文献   

17.
Quantum dots of InP:Mn are chemically prepared by following hot colloidal nanochemistry with starting precursors that obviate the need for external surfactant. These quantum dots are uniform spheres with 3-nm diameters; they are crystalline, photoluminescent, and magnetic. The crystallographic and optical properties are similar to those of undoped InP nanocrystallites, while the magnetism is consistent with the ferromagnetic response observed in a class of diluted magnetic semiconductors. Because of the ultrafine sizes, the sample shows superparamagnetic behavior, whereas ferromagnetic hysteresis loops are clearly seen below the blocking temperature. Structural characterization and analysis confirm that the magnetism in these quantum dots is not due to segregated binary MnP or MnO phases and that they truly represent a homogeneous dilute magnetic semiconductor.  相似文献   

18.
以磷化锌、氯化铟为原料,以十二烷胺为溶剂,在150~200℃下合成了InP量子点,通过相转移和紫外光照得到了巯基乙酸修饰的水溶性InP/ZnS量子点.利用X射线衍射仪、透射电镜、高分辨透射电镜、荧光光谱仪等分析了不同温度下合成的量子点的粒径、形貌、荧光性能及指纹显现效果.结果表明,合成的InP和InP/ZnS量子点为球...  相似文献   

19.
Nanocomposites based on nanocrystalline ZnO and CdSe and InP nanocrystals (quantum dots) have been synthesized by chemical precipitation and high-temperature colloidal synthesis. The microstructure parameters of the oxide matrix and the size of the CdSe and InP nanocrystals have been determined. A correlation was established between the spectral dependence of the photoconductivity of nanocomposites and the optical absorption spectra of quantum dots. The influence of CdSe and InP quantum dots on the interaction of ZnO with NO2 under visible light irradiation has been studied. It has been shown that the synthesized nanocomposites can be used to detect NO2 under illumination with green light without additional thermal heating.  相似文献   

20.
This work reports a new experimental methodology for the synthesis of ultra small zinc sulfide and iron doped zinc sulfide quantum dots in aqueous media. The nanoparticles were obtained using a simple procedure based on the precipitation of ZnS in aqueous solution in the presence of 2-mercaptoethanol as a capping agent, at room temperature. The effect of Fe(3+) ion concentration as dopant on the optical properties of ZnS was studied. The size of quantum dots was determined to be about 1nm, using scanning tunneling microscopy. The synthesized nanoparticles were characterized by X-ray diffraction, UV-Vis absorption and photoluminescence emission spectroscopies. The presence and amount of iron impurity in the structure of Zn((1-x))Fe(x)S nanocrystals were confirmed by atomic absorption spectrometry. A blue shift in band-gap of ZnS was observed upon increasing incorporation of Fe(3+) ion in the iron doped zinc sulfide quantum dots. The photoluminescence investigations showed that, in the case of iron doped ZnS nanoparticles, the emission band of pure ZnS nanoparticles at 427nm shifts to 442nm with appearance of a new sharp emission band around 532nm. The X-ray diffraction analysis indicated that the iron doped nanoparticles are crystalline, with cubic zinc blend structure, having particle diameters of 1.7±022nm. Finally, the interaction of the synthesized nanoparticles with bovine serum albumin was investigated at pH 7.2. The UV-Vis absorption and fluorescence spectroscopic methods were applied to compare the optical properties of pure and iron doped ZnS quantum dots upon interaction with BSA. It was proved that, in both cases, the fluorescence quenching of BSA by the quantum dots is mainly a result of the formation of QDs-BSA complex in solution. In the steady-state fluorescence studies, the interaction parameters including binding constants (K(a)), number of binding sites (n), quenching constants ( [Formula: see text] ), and bimolecular quenching rate constants (k(q)) were determined at three different temperatures and the results were then used to evaluate the corresponding thermodynamic parameters ΔH, ΔS and ΔG.  相似文献   

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