M?ssbauer study of FINEMET type nanocrystalline ribbons irradiated with swift heavy ions

As-quenched and stress field annealed FINEMET ribbons were irradiated with 246?MeV energy Kr, 470?MeV energy Xe and 720?MeV energy Bi ions and investigated by ⁵⁷Fe M?ssbauer spectroscopy and XRD methods. The change in relative areas of the 2nd and 5th lines in the M?ssbauer spectra indicated significant changes in the magnetic anisotropy of both as-quenched and stress annealed FINEMET due to irradiation with swift heavy ions. Differences were observed between the effect of irradiations with various ions having different energy and fluence. The effect of irradiation on the magnetic orientation in FINEMET was explained in terms of radiation induced defects. The swift heavy ion irradiation can be applied to produce FINEMET ribbons with more favorable soft magnetic properties for technological applications.     

Defects mediated diffusion in Pt/Co/Pt multilayers induced by dense electronic excitations

Present study compares the effects of 200 MeV Ag¹⁵⁺ and 100 MeV O⁷⁺ ion irradiations on the structural, interfacial mixing and magnetic properties of annealed Pt/Co/Pt layers fabricated by DC magnetron sputtering. X-ray diffraction analysis shows that ion irradiations coupled with post annealing results in the formation of the face centred tetragonal L1₀ CoPt phase. Irradiation using 200 MeV Ag¹⁵⁺ ions having higher ionizing energy transfer to the film was found to be more efficient in causing structural phase transition as compared with that using 100 MeV energy O⁷⁺ ions having lower ionizing energy transfer at similar fluence. Rutherford back scattering analysis reveals the role of defect mediated inter-atomic diffusion in tailoring the alloy composition of the film irradiated by different energetic ions. A broad magnetic switching field distribution for O⁷⁺ ion irradiated films compared to Ag¹⁵⁺ ion irradiation was evident from the magnetic measurements. The contribution of alloy composition to switching field distribution has been discussed in details. Above results showed that the electronic energy loss and fluence dependent defects, generated by irradiation, played an important role in tuning the structural, atomic diffusion and magnetic reversal properties of Pt/Co/Pt.     

Vacuum effects on the radiation chemical yields in PADC films exposed to gamma rays and heavy ions

In order to understand the vacuum effects on the sensitivity of PADC detectors from the viewpoint of molecule structural modification along nuclear tracks, a series of FT-IR spectrometric studies has been made for PADC films exposed to He and C ions at energies below 6 MeV/n, as well as to gamma rays from an intense Co-60 source, under the both conditions of in air and in vacuum. The radiation chemical yields for the losses of ether and carbonate ester bonds are hardly affected by the environmental conditions in the cases of He and C ion irradiations. For gamma ray, the yields are about half in vacuum compared to those in air. The formation of OH groups is fairly suppressed in vacuum in all cases. Recombination of free radicals resulted in modified polymeric network formation would be enhanced in heavy ion irradiations rather than in that of gamma irradiations.     

Thermal annealing of heavy ion tracks in muscovite mica

Abstract

Thermal annealing of latent tracks caused by the passage of heavy ions, viz. Pb²⁰⁸ (13.8 MeV/n) and Ni⁵⁸ (15.37 MeV/n), in muscovite mica is investigated. The activation energy for track annealing, determined using different annealing models, is compared. The effect of thermal annealing on size and energy resolution of heavy ions in mica, based on the track etch rate and track length reduction, is discussed.     

Study on the dynamic energy spectra of mev heavy ions penetrating biological sample

In order to study the probability for heavy ions to have a long projectile range in botanic sample, transmission energy spectra of 1.5 MeV F⁺, 3 MeV F²⁺ and 1.5 MeV H⁺ penetrating 100 µm seed cotyledon samples were measured as a function of ion dose. Results show that very fewer ions can penetrate through the samples, though their theoretical ranges are much shorter than sample thickness. Besides, the measured energy spectra of 1.5 MeV and 3.0 MeV F ions change dynamically while increasing the ion dose, they extend to the high energy direction and the count rates of the transmission ions increases quickly. These phenomena can be understood with the special composition and structure of the biological material.     

Heavy ion induced damage in MgAl2O4, an inert matrix candidate for the transmutation of minor actinides

Magnesium aluminum spinel (MgAl₂O₄) is a material selected as a possible matrix for transmutation of minor actinides by neutron capture or fission in nuclear reactors. To study the radiation stability of this inert matrix, especially against fission product impact, irradiations with heavy energetic ions or clusters have been performed. The high electronic energy losses of the heavy ions in this material led to the formation of visible tracks as evidenced by transmission electron microscopy for 30 MeV C₆₀-Buckminster fullerenes and for ions of energy close to or higher than fission energy (²⁰⁹Bi with 120 MeV and 2.38 GeV energy). The irradiations at high energies showed a pronounced degradation of the spinel. Additionally, MgAl₂O₄ exhibited a large swelling for irradiation at high fluences with fission products of fission energy (here I-ions of 72 MeV) and at temperatures ≤ 500 °C. These observations are discussed from the technological point of view in the frame of using MgAl₂O₄ as an inert matrix for the transmutation of minor actinides.     

离子微束技术及其多学科应用

通过微米孔准直或电磁聚焦技术可将加速器产生的MeV离子束形成微米尺寸的离子束斑(微束), 从而用来研究固体和生物样品的微米空间分辨的材料信息和辐照响应。 结合MeV离子微束的发展历史综述了微束技术和跨学科应用, 包括利用微束开展具有空间分辨的离子束分析、 单粒子效应、 微纳加工和细胞辐射响应等研究。 介绍了中国科学院近代物理研究所的高能重离子微束辐照装置, 该装置成功地将总能量为1 GeV的C离子在大气中聚焦为1 μm×2 μm的微米束斑。 Beam of MeV ions from particle accelerators can be confined by collimators or focused by electrical/magnetic quadruples into micrometer size, and this microbeam can be used to obtain spatial information or radiation effect in solids and biological samples. This paper reviews the technical developments and the multi disciplinary applications of microbeam, including ion beam analysis, single event effect in semiconductor devices, proton beam writing and cellular response to targeted particle irradiations. Finally, the high energy heavy ion microbeam facility at the Institute of Modern Physics of Chinese Academy of Sciences is introduced, which has successfully focused 1 GeV Carbon ions into a beam spot of 1 μm×2 μm in air.     

Recovery of low temperature electron irradiation-induced damage in n-type gaas

Undoped n-type GaAa was irradiated near 5 and 77 °K with electrons having incident energies between 0.46 and 1.30 MeV. The recovery of the electrical resistivity and the Hall coefficient upon annealing from 4 to 520 °K was monitored. Changes which occurred upon annealing below 200 °K could be reversed by ionizing radiation. A small amount of irreversible ionization-induced recovery was observed after irradiation near 5 °K. Major irreversible recovery stages were centered near 235 (stage I), 280 (stage II) and 520 °K (stage III). Recovery in stage I and II obeyed first order kinetics. The activation energies of stages I and II were determined as 0.72 and 0.83 eV, respectively. The carrier concentration changes per unit irradiation dose corresponding to the three recovery stages differed in their energy dependence indicating that the defects which are removed in stage III have the lowest threshold energy. The carrier concentration changes per unit irradiation dose corresponding to stages I and III were higher for irradiation near 5 °K than for irradiation near 77 °K.     

Effect of 30 Mev Li 3+ ion and 8 MeV electron irradiation on n-channel MOSFETs

The effect of 30 v MeV Li 3+ ion and 8 v MeV electron irradiation on the threshold voltage ( V TH ), the voltage shift due to interface trapped charge ( j V Nit ), the voltage shift due to oxide trapped charge ( j V Not ), the density of interface trapped charge ( j N it ), the density of oxide trapped charge ( j N ot ) and the drain saturation current ( I D v Sat ) were studied as a function of fluence. Considerable increase in j N it and j N ot , and decrease in V TH and I D v Sat were observed in both types of irradiation. The observed difference in the properties of Li 3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 v MeV Li 3+ ion irradiation produce more damage when compared to the 8 v MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 v °C.     

Radiation damage by implanted ions in GaAs and GaP

Abstract

The production of lattice disorder in GaAs and GaP by Te ions up to 40 keV has been investigated. For GaAs the build up of damage with implanted ion dose is linear until a saturation level is reached. For Gap, two linear regions are evident; a slow build up of damage to ?15 per cent of the saturation level, followed by a faster rate of increase up to the final 100 per cent level. Radiation annealing, for GaP samples, both by the heavy ion beam during implantation and by the helium beam during back-scattering measurements has been observed. The annealing temperatures required for re-ordering the lattice depend on the percentage of damage present. Samples damaged up to the saturation level require annealing at ?500°C, whilst 300°C is sufficient for samples damaged to ?50 per cent of the saturation value.     

Neutron dose measurement in carbon ion radiation therapy at HIRFL (IMP)

For radiation protection purposes, the neutron dose in carbon ion radiation therapy at the HIRFL (Heavy Ion Research Facility in Lanzhou) was investigated. The neutron dose from primary 12C ions with a specific energy of 100 MeV/u delivered from SSC was roughly measured with a standard Anderson-Broun rem-meter using a polyethylene target at various distances. The result shows that a maximum neutron dose contribution of 19 mSv in a typically surface tumor treatment was obtained, which is less than 1% of the planed heavy ion dose and is in reasonable agreement with other reports. Also the γ-ray dose was measured in this experiment using a thermo luminescent detector.     

多量子阱激光二极管质子辐射效应及其退火特性

 研究5和2 MeV质子对法布里-珀罗（FP）腔结构及分布反馈（DFB）结构的多量子阱激光二极管的辐射效应,结果显示：在5×10¹²～5×10¹³ cm^-2质子注量范围内,随着注量的增大,激光二极管阈值电流逐渐增大,电流-电压特性的低压区电流渐渐增大。由60Coγ总剂量实验结果推断:质子对实验器件的损伤源于质子位移效应。采用Trim程序的模拟结果表明：在2 MeV质子射程以内,2 MeV质子要比5 MeV质子产生的空位数多。这使得相同辐照注量下,2 MeV质子要比5 MeV质子导致的阈值电流增大更多,损伤更为严重。激光二极管辐射损伤存在着正向偏置退火效应,FP和DFB结构的二极管具有相似的加电退火规律,均可拟合成指数衰减形式,退火曲线可以分成退火常数不同的几段进行拟合。正向偏置退火效应使得辐照期间,处于加电状态的激光二极管比处于短路状态的激光二极管退化程度有所减弱。     

Different shapes of tracks in phlogopite, biotite and soda lime glass

Etched track opening geometries in Biotite, Phlogopite and soda-lime glass irradiated with swift heavy ions [¹⁹⁷Au(11.64 MeV/n), ¹³⁶Xe(11.56 MeV/n), ⁵⁸Ni(11.56 MeV/n)] at different angle of incidence have been studied using appropriate chemical etching technique. Different geometries (Hexagonal, irregular polygon, triangular in case of Biotite and Phlogopite, and circular & elliptical in case of soda lime glass detector) of heavy ion tracks are reported in the present investigations using optical microscope. The different shapes of these heavy ions track geometries are found to be related with various target-projectile parameters (viz: type of projectiles, energy, stopping power, angle of incidence of the projectile, density of defects and its reactivity with etchant, etching conditions and chemical structure of the detectors). The dependence of different shapes of heavy ion tracks in isotropic and anisotropic medium on the variation of radiation damage densities along the ion trajectories have also been discussed in the present paper.      

The effects of high-energy ion irradiations on the I–V characteristics of silicon NPN transistors

The silicon NPN rf power transistors were irradiated with different linear energy transfer (LET) ions such as 50?MeV Li³⁺, 80?MeV C⁶⁺ and 150?MeV Ag¹²⁺ ions in the dose range of 1–100?Mrad. The SRIM simulation was used to understand the energy loss and range of these ions in the transistor structure. The different electrical parameters such as Gummel characteristics, excess base current (ΔI_B), DC current gain (h_FE), displacement damage factor (K) and output characteristics were systematically studied before and after irradiation. The ion irradiation results were compared with ⁶⁰Co-gamma irradiation result in the same dose range. A considerable increase in base current (I_B) and a decrease in h_FE and I_CSat were observed after irradiation. The degradation in the electrical parameters was comparably very high for Ag¹²⁺ ion-irradiated transistor when compared to other ion-irradiated transistors, whereas the degradation in the electrical parameters for Li³⁺ and C⁶⁺ ion-irradiated transistors was comparable with gamma-irradiated transistor. The isochronal annealing study was conducted on the 100?Mrad irradiated transistors up to 500°C to analyze the recovery in different electrical parameters. The h_FE and other electrical parameters of irradiated transistors were almost recovered after 500°C for 50?MeV Li³⁺, 80?MeV C⁶⁺ ion and ⁶⁰Co-gamma-irradiated transistors, whereas for 150?MeV Ag¹²⁺ ion-irradiated transistor, the recovery in electrical characteristics is not complete.     

Laser-triggered quasi-monoenergetic ion beams at a moderate intensity and pulse duration

Plasma produced by short laser pulses from thin homogeneous foils with light and heavy ions is capable of generating quasi-monoenergetic light ions. This happens for the tail of light ions near the front of heavy ions. It was found that this effect is well pronounced for a moderate laser intensity (～10¹⁸ W/cm²) and pulse duration (～1 ps) by using a 2D particle-in-cell simulation of the laser interaction with thin CD₂ foils. Quasi-monoenergetic deuterons form a jet from the rear side of the foil with the energy ～1 MeV. The conversion efficiency to these quasi-monoenergetic ions is 10^?3.     

Swift heavy ion irradiation induced modification of BiFeO3 thin films prepared by sol-gel method

We report the preparation of multiferroic BiFeO₃ thin films on ITO coated glass substrates through sol-gel spin coating method followed by thermal annealing and their modification by swift heavy ion (SHI) irradiation. X-ray diffraction and Raman spectroscopy studies revealed amorphous nature of the as deposited films. Rhombohedral crystalline phase of BiFeO₃ evolved on annealing the films at 550°C. Both XRD and Raman studies indicated that SHI irradiation by 200 MeV Au ions result in fragmentation of particles and progressive amorphization with increasing irradiation fluence. The average crystallite size estimated from the XRD line width decreased from 38 nm in pristine sample annealed at 550°C to 29 nm on irradiating these films by 200 MeV Au ions at 1 × 10¹¹ ions cm⁻². Complete amorphization of the rhombohedral BiFeO₃ phase occurs at a fluence of 1 × 10¹² ions.cm⁻². Irradiation by another ion (200 MeV Ag) had the similar effect. For both the ions, the electronic energy loss exceeds the threshold electronic energy loss for creation of amorphized latent tracks in BiFeO₃.     

Conductivity of irradiated Kapton in relation to energy loss of ions and electrons

Abstract

We have studied the effects of 2.5 MeV electron irradiation and ion (C, N, F, Si and Kr) bombardment on the electrical conductivity of a polyimide (Kapton-H) with ion energies ranging between 320 keV (N) and 1.25 GeV (Kr). In this wide range of situations we have tried to sort out the respective effects of nuclear and electronic excitation energy losses.

For all ion irradiation the conductivity is found to scale with the electronic excitation absorbed dose: i.e. a power law of conductivity versus absorbed dose with an exponent around 9 is observed. At a given absorbed dose (in Gray units) the efficiency of each ion to enhance conductivity is found to be proportional to the electronic energy loss; electrons are much less efficient than ions and thus collective excitations are required to achieve this process.

The nuclear energy loss can perhaps play some role at conductivities higher than 100 Ω^?1 m^?1, but its effects are negligible in the range explored here.     

Monitoring by Raman spectroscopy of the damage induced in the wake of energetic ions

This article reports micro‐Raman experiments performed on cross sections of 6H‐SiC crystals irradiated with heavy ions of different energies. The results demonstrate that this technique is very powerful to quantify the damage created in the wake of energetic ions from the surface of samples down to the ion resting position. For slow ions (900‐keV I), ballistic collisions lead to the amorphization of the surface region of samples. For swift ions (36‐MeV W), the surface region remains crystalline and amorphization occurs around the end of the ion path. Moreover, synergistic effects between electronic and nuclear slowing down processes are put forward. The methodology used in this work may be adapted to other materials where radiation effects need to be investigated, provided that the damage created by irradiation is detectable by Raman spectroscopy. Copyright © 2014 John Wiley & Sons, Ltd.     

IC-100 accelerator complex for scientific and applied research

Industrial production of nuclear filters has been implemented at the IC-100 cyclotron complex of the Laboratory of Nuclear Reactions at the Joint Institute for Nuclear Research. After the complete upgrade, the cyclotron was equipped with the superconducting ECR ion source and the system of external axial beam injection. The implantation complex was equipped with the special transportation channel with the beam scanning system and the setup for irradiation of polymer films. Intense beams of heavy ions Ne, Ar, Fe, Kr, Xe, I, and W with an energy of ～1 MeV/nucleon were obtained. the properties of irradiated crystals were studied, different polymer films were irradiated, and several thousands of square meters of track membranes with pore densities varying in a wide range were produced. Other scientific and applied problems can be solved at the cyclotron complex.     

Structural phase diagram for ZnS nanocrystalline thin films under swift heavy ion irradiation

The synthesis of nanocrystalline ZnS thin films by pulsed laser deposition and their modification by swift heavy ions are presented. The irradiations with 150 MeV Ni ions at fluences of 1×10¹¹, 1×10¹² and 1×10¹³ ions/cm² have been used for these studies. Irradiation results in structural phase transformation and bandgap modification of these films are investigated by using X-ray diffraction and UV-visible absorption measurements, respectively. Since stoichiometry changes induced by irradiation can contribute to the modification of these properties, elastic recoil detection analysis has been performed on pristine and 150 MeV Ni ions irradiated ZnS thin films using a 120 MeV Ag ion beam. The stoichiometry of the films has been found to be similar for pristine and ion irradiated samples. A structural phase diagram based on thermal and pressure spikes has been constructed to explain the structural phase transformation.