Radiation from 39 and 45 MeV electrons channeled in Lithium Niobate

Abstract

Channeling radiation from 39 and 45 MeV electrons channeled along the <0001> axis, the (0110) plane and the (1210) plane of a 30 μm thick LiNbO ₃ crystal has been measured. Calculations of the planar crystal potentials were performed by means of the many-beam formalism. Good agreement between theory and experiment is obtained for the planar channeling radiation. Associated with channeling additional radiation lines have been observed, which may be explained by a periodic perturbation of the continuum potential.     

Electromagnetic radiation of MeV electrons in thick aligned single crystals

Abstract

Earlier published theoretical models for MeV electrons are generalized in this paper. Different theoretical predictions for planar channeling and accompanying electromagnetic radiation in thick crystals are presented. A comparative analysis of theoretical and experimental spectra of photon radiation is given. Thickness dependences of channeling quantum state populations, radiation line broadening and photon flux intensities are obtained. The existence of planar electron channeling at 54 MeV in a silicon single crystal with a thickness of several millimetres is shown.     

Ranges and profiles of distribution of low-energy ions channeling in metal and semiconductor single crystals

In the present work peculiarities of trajectories and energy losses, ranges and profiles of distribution of low-energy different-mass ions channeling in thin single crystals of metals and semiconductors have been thoroughly studied by computer simulation in binary collision approximation. The character of oscillations of channeled-ion trajectories depending on their energies, aiming points from the axis of a channel, kind of interaction potential, crystal lattice type and temperature has been determined. It has been found that, in the case of light ions even at low energy, the main contribution to energy loss is made by inelastic energy losses, whereas for heavy ions, already at E < 10 keV, elastic energy losses exceed inelastic ones. Profiles of the distribution of channeled ions have been calculated depending on crystal lattice type, kind of ions and their energy.     

Orbital angular momentum of channeling radiation from relativistic electrons in thin Si crystal

We propose to use channeling radiation (CR) from relativistic electrons as a source of high energy twisted photons in the MeV range. We calculate numerically the orbital angular momentum (OAM) of radiation produced by electrons with the energies $155÷2500$ MeV for the axial and planar channeling in the thin Si crystal. We obtain that the average OAM of CR in this case is approximately $1÷6?$ per photon with the photon energies about $1÷2$ MeV.     

A Search for the de Broglie Particle Internal Clock by Means of Electron Channeling

The particle internal clock conjectured by de Broglie in 1924 was investigated in a channeling experiment using a beam of ∼80 MeV electrons aligned along the 〈110〉 direction of a 1 μm thick silicon crystal. Some of the electrons undergo a rosette motion, in which they interact with a single atomic row. When the electron energy is finely varied, the rate of electron transmission at 0° shows a 8% dip within 0.5% of the resonance energy, 80.874 MeV, for which the frequency of atomic collisions matches the electron’s internal clock frequency. A model is presented to show the compatibility of our data with the de Broglie hypothesis.     

Bent crystal channeling of 255 MeV electrons

Charged particles channeled in a bent crystal plane are known to be deflected along the bent plane. Such studies have mainly been performed for high-energy positively-charged particles such as protons, and recently for electrons with energies from 855 MeV to 20.35 GeV. In this work, we present experimental results on the bent crystal channeling of electrons for a lower energy region (255 MeV), where the multiple scattering effect in a crystal is expected to be more dominant. Angular distributions of electrons transmitted through a bent Si crystal have been measured, which are in good agreement with the simulation results.     

Generation of X-ray radiation during planar channeling of relativistic electrons in crystals

A classical model of the emission of radiation by relativistic electrons in a crystal has been developed using the form of the potential maximally close to its actual form. The dynamics of electrons with energies 20–25 MeV performing channeling in crystals is simulated numerically. The generation of electromagnetic radiation that accompanies this motion has been considered. It has been shown that, in the given electron energy range, this radiation corresponds to the X-ray spectral band with characteristic photon energies of up to 40 keV. The radiation yield is estimated. The requirements to the electron beam parameters are formulated based on the results of the simulation. It has been shown that numerical simulation gives results that correlate with the analytic results obtained earlier and with the experimental data.     

The channeling of light ions in the cubic and tetragonal (ferroelectrically polarized) phases of BaTiO3

Abstract

The channeling properties of thin BaTiO₃ crystals at temperatures both above and below the ferroelectric Curie point (T _c ? 120°C)have been measured with 3.8 MeV protons. In the cubic phase (T > T _c ), values for critical angles and minimum yields, have been measured for the major crystal axes and planes by detecting backscattered and transmitted protons, and characteristic X-rays. These values are compared with those predicted by current theories of ion channeling. In the tetragonal phase (T < T _c ), measurements were made with single ferroelectric domains. The channeling characteristics of the (100) planes in BaTiO₃ are found to be strongly dependent on the relative orientations of the electric polarization vector P, the (100) planes, and the beam direction. For example, when P lies in the channeling plane, strong channeling occurs; but when P is normal to the plane, the incident beam is rapidly dechanneled. These effects are attributed to the relatively large ionic displacements, and the strong internal electric fields in the ferroelectrically polarized state.     

Theory of coherent bremsstrahlung

Abstract

We review the phenomenon of coherent bremsstrahlung (CB) of electrons in a crystal. This well-studied process in a new light after the realization by Andersen [J. U. Andersen, Nucl. Inst. and Methods 170, 1 (1980)] that CB and the phenomenon of channeling radiation (CR) are two aspects of the same physical process. These two types of radiation may be described in a unified framework by the use of Bloch functions for the electron in the crystal. The kinematics of CB is discussed from this viewpoint and a model calculation for CB in a strained-layer superlattice is presented.     

Channeling radiation: Past achievements and future prospects

Abstract

When a relativistic charged particle passes through a single crystal very nearly along a major crystalline plane or axis so that it is channeled in that direction, it undergoes periodic motion in the plane transverse to this direction and hence it can radiate. Quantum mechanically, this channeling radiation corresponds to a radiative transition between two eigenstates of the transverse crystalline potential; when the transition occurs between two bound states, a sharp spectral line is emitted. When there are only two bound states (for incident electrons), or when the interplaner potential is nearly harmonic (as for incident positrons), the emitted radiation is nearly monochromatic. Since the discovery of channeling radiation at the LLNL Electron-Positron Linear Accelerator, many of its properties have been delineated, both there and elsewhere. For example, channeling radiation is very intense, forward-directed, easily tunable, and for the planar case, linearly polarized. Channeling radiation has been used as a probe both of the interplanar potentials and other properties of perfect crystals and of the effects of impurities and defects in imperfect crystals. Finally, channeling radiation has great potential use as a photon source for numerous other applications in several fields of science and technology.

This paper is intended to keynote the first International Conference on Coherent Radiation Processes in Strong Fields by recalling some history of the discovery and exploitation to date of channeling radiation. Studies of channeling radiation, in addition to elucidating the physics of the process itself, its application to the determination of properties of perfect and imperfect crystals, and its potential application to a large variety of fields by its use as an intense, monochromatic, forward-directed, tunable, and polarized photon source, have spawned an entire industry of studies of other coherent radiation processes, all consisting of photon production from beams of relativistic charged particles traversing periodic structures, which constitute the principal subject matter of this Conference. This paper will be limited to the discussion of channeling radiation and some of its applications. It will be in the nature of an illustrative exposition, showing many of the features of channeling radiation and its applications in a qualitative way. Several detailed studies of channeling radiation will be presented later in the Conference.     

Complex structure of resonant coherent excitation peaks for heavy relativistic hydrogen-like ions under planar channeling

The computer model for the resonant coherent excitation of heavy relativistic ions under planar channeling in crystals taking into account the fine structure of the energy levels of the orbital electron and the ion ionization from both the ground and first excited state is presented. The model has been used to explain the experiments carried out under planar channeling of 390 MeV/n ¹⁷⁺Ar ions. Reasonably good agreement for the calculated and experimental data has been obtained.     

Angular distribution of the soft component of radiation from relativistic electrons near planar orientation in thick single crystals

The Tomsk synchrotron has been used to carry out an experimental study of the soft component (30 MeV) of the radiation from relativistic electrons in diamond, silicon, and tungsten single crystals. It is shown that a component of the radiation associated with channeling emission from electrons trapped inside the crystal can be distinguished because of angular selection. It is found that the linear density of the radiation from the electrons which must be trapped in planar channeling inside the crystal because of multiple scattering is substantially reduced in comparison with the linear density of the radiation from electrons trapped in this regime in the surface layer of the crystal. It is shown that the quasirefraction of an electron beam by the planar potential in thick single crystals leads to effective reflection of electrons.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 70–80, June, 1991.     

Laser induced single-crystal transition in polycrystalline silicon

Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 ? thick polycrystalline layer is about 70 MW/cm² (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm².     

ABNORMAL ENERGY DEPENDENCE OF AXIAL MINIMUM CHANNELING YIELDS IN GexSi1-x/Si(100) STRAINED

An energy dependence of the axial minimum channeling yield in Ge_xSi_1-x/Si(100) Strained-layer superlattice is observed in the energy range of impinging He⁺ ione from 1.2 to 3.0 MeV. For [100] axial channeling, the measurements ere in agreement with what have been known in a single crystal. However, for [110] axial channeling, it is found that the minimum channeling yields increase markedly with the increase of He⁺ ion energy, which is contrary to the general channeling behaviors in a single crystal. A tentative model is suggested to explain this aberrance.     

反比相关的双曲余弦平方势与电子的面沟道辐射

带电粒子在晶体沟道中的运动行为决定于粒子-晶体相互作用势.常用的粒子晶体相互作用势有Lindhard势、Moliere和正弦平方势.当超相对论电子沿着晶体的低晶面指数方向入射时,电子和晶体之间的相互作用势可用反比相关的双曲余弦平方势描写.在量子力学框架内,利用这一相互作用势成功地将系统的Schrodinger方程化为超几何方程,从而简化了系统本征值和本征态问题的计算和讨论.考虑到质量的相对论效应和频率的Doppler效应,导出了实验室坐标系中电子的能级分布和辐射谱分布.并以电子的Si(110)面沟道辐射为例,选定一组与入射粒子有关的参数和一组与晶体有关的参数,计算了能量为E=0.5GeV的电子在低位能级之间的跃迁,导出了电子面沟道辐射能量ΔE=49.1MeV,得到了与实验符合的结果.     

正电子面沟道辐射的非线性特征

经典物理学指出,在电磁场中作加速运动的带电粒子将不断向外辐射能量.在晶体沟道中运动的带电粒子也不例外,晶格场可以使带电粒子的辐射能量达到很高.对于10MeV的正电子,辐射能量可达keV量级.粒子在沟道中的运动行为决定于粒子晶体的相互作用势,常用的相互作用势有Lindhard势、Moliere势和正弦平方势.由于粒子在沟道中的运动行为十分类似于震荡器中运动的自由电子,可望把沟道辐射改造为Χ射线激光或γ射线激光.从Lindhard势出发,将其展开到四次项,在经典力学框架内,粒子的运动方程可以化为含立方项的二阶非线性微分方程,并利用Jacobian椭圆函数和第一类全椭圆积分解析地表示了系统的解和粒子运动周期,导出了正电子面沟道辐射的瞬时辐射强度、平均辐射强度和最大辐射频率,指出了利用沟道辐射作为γ激光的可能性.     

Conductivity of ionic crystals when they are irradiated by picosecond electron beams

This paper discusses the pulsed electron conductivity σ of KCl, KBr, and NaCl crystals when they are excited by an electron beam (0.2 MeV, 50 ps) with current densities in the interval j=(30–10⁴) A/cm². It is shown that the lifetime of the electrons in the conduction band is τ≪100 ps. To explain the experimental σ(j) dependences, a model is proposed that includes electron capture by structural defects and stable radiation defects at low excitation densities and electron capture predominantly by unstable radiation defects generated by the excitation pulse at high excitation densities. Fiz. Tverd. Tela (St. Petersburg) 41, 1200–1203 (July 1999)     

Features of the formation of radiation spectra at (111) planar channeling of relativistic electrons in a Si crystal

The spectral intensity of (111) channeling radiation from electrons is numerically calculated at the energy varying from 100 to 900 MeV and different electron incidence angles relative to the (111) planes in thin Si crystals. The calculation results show that the channeling radiation’s spectra have a more complicated structure, and the total channeling radiation’s yield is several times larger than that at (100) or (110) channeling.     

反比相关的双曲余弦平方势与相对论电子面沟道辐射的经典描述

在经典力学框架内,描述了带电粒子自发辐射谱分布与最大辐射频率;引入反比相关的双曲余弦平方势,讨论了超相对论电子的面沟道辐射,导出了电子能量E=5.0GeV时,一次谐波的最大辐射能量ε=57MeV,与其他工作比较基本一致.沟道辐射与自由电子激光十分类似,它的方向性极好,大都集中在粒子运动方向、角宽Δθ≈γ^-1/2范围内;且能量高、连续可调,偏振度也很好.指出了利用超晶格沟道辐射与超晶格的多层薄膜结构相互作用,可望把自发的沟道辐射改造为相干辐射,从而得到X激光或γ激光.     

Comparative results on collimation of the SPS beam of protons and Pb ions with bent crystals

New experiments on crystal assisted collimation have been carried out at the CERN SPS with stored beams of 120 GeV/c protons and Pb ions. Bent silicon crystals of 2 mm long with about 170 μrad bend angle and a small residual torsion were used as primary collimators. In channeling conditions, the beam loss rate induced by inelastic interactions of particles with the crystal nuclei is minimal. The loss reduction was about 6 for protons and about 3 for Pb ions. Lower reduction value for Pb ions can be explained by their considerably larger ionization losses in the crystal. In one of the crystals, the measured fraction of the Pb ion beam halo deflected in channeling conditions was 74%, a value very close to that for protons. The intensity of the off-momentum halo leaking out from the collimation station was measured in the first high dispersion area downstream. The particle population in the shadow of the secondary collimator-absorber was considerably smaller in channeling conditions than for amorphous orientations of the crystal. The corresponding reduction was in the range of 2-5 for both protons and Pb ions.