Ion diffusion-controlled thermally stimulated processes in X-ray irradiated halide crystals

The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF 2 , BaF 2 , LiBaF 3 and KBr crystals were investigated above 290 v K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF 2 , BaF 2 , LiBaF 3 and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal evidence that above 290 v K the TSR processes are initiated and controlled by the ionic defect thermal detrapping, migration and interaction with the localised electronic and ionic charges and colour centres. The ion diffusion-controlled TSR processes take place in the above halide crystals.     

Ionic,electronic and ion-diffusion controlled relaxation processes in CaF2, BaF2 and LiBaF3 crystals

Abstract

The ionic, electronic and anion-diffusion controlled thermally stimulated relaxation (TSR) processes at 80—700 K in CaF₂ BaF₂ and LiBaF₃ crystals (X-ray irradiated or non-irradiated) have been investigated by means of ionic conductivity, ionic thermally stimulated (TS) depolarization current (TSDC); as well as current (TSC), luminescence (TSL) and bleaching (TSB) techniques. Above 250—290 K broad and overlapping anion TSDC peaks and correlated TSB stages are detected. The TSB kinetics is initiated and controlled by anion detrapping and interaction with the localized charges, i.e., the anion-diffusion controlled TSR processes take place in fluorides. The TSL and TSC data for LiBaF₃ indicate that the lifetime and drift of electrons at 80—250 K is very small because of deep retrapping. The main TSL peaks at 132K, 170K and 220 K are caused by V_k center detrapping and hole-diffusion controlled tunnel recombination within pairs like {D_n e^?…V_k }.     

Ion diffusion-controlled thermally stimulated processes in x-ray irradiated halide crystals

The ionic and ion diffusion-controlled thermally stimulated relaxation (TSR) processes in CaF₂, BaF₂, LiBaF₃ and KBr crystals were investigated above 290 K by means of the ionic conductivity, ionic thermally stimulated depolarisation current (TSDC) and thermal bleaching techniques. Under a DC field the halide crystals store large ionic space charge. We were able to detect in CaF₂, BaF₂, LiBaF₃ and KBr in the extrinsic ionic conductivity region a series of the ionic defect (the interstitial anion and/or anion vacancies - in fluorides; the cation vacancies - in KBr) release stages: 3-6 wide and overlapping ionic TSDC peaks. The correlated data of the ionic TSDC and the F band thermal show that above 290 K the TSR processes are initiated and controlled by the ionic defect thermal detrapping, migration and interaction with the localised electronic and ionic charges and colour centres. The ion diffusion-controlled TSR processes take place in the above halide crystals.     

Dielectric relaxation properties of tysonite-type solid solutions La1−xBaxF3−x

Dielectric relaxation properties of solid solutions La_1?xBa_xF_3?x (x ? 0105) have been studied by thermally stimulated depolanzation current (TSDC)- and a c. dielectric loss (DL) techniques.For x < 30 × 10^?3 the dielectric spectra show a relaxation peak which is ascribed to a simple associate of a substitutional dopant ion and a fluoride ion vacancy (Ba_LaV_F)^x in nearest-neighbour position, the vacancy being confined to the B sublattice For x values of about 1.3 × 10^?2 a relaxation peak appears which is tentatively attributed to a similar type of defect associate with the vacancy now confined to the A sublattice of the tysonite anion array One broad relaxation peak dominates the TSDC and DL spectra over the whole concentration range This peak is due to the relaxation of macroscopic space charge, i e ionic conductivity The low-temperature ion conductivity has been determined for several solid solutions, and extrapolates to the high-temperature conductivity determined previously with impedance spectroscopy Below liquid-nitrogen temperature three relaxations are observed, and ascribed to electronic transitions in cenum impurities. A computer programme has been developed to analyse TSDC relaxation peaks, taking dipole-dipole interactions into account Relaxation parameters and dipole concentrations are presented.     

Electronic relaxations of radiative defects of the anion sublattice in caesium bromide crystals and exoemission of electrons

The thermostimulated exoelectron emission (TSEE) is applied for investigation of the processes of radiative defects recombination in the nearsurface layer. Results of TSEE studies of radiatively excited CsBr crystals are presented. Dose dependences of the decay kinetics, TSEE spectrum structure and exosums were studied. Concentration of exoemission-active centres (EAC) and TSEE kinetics parameters have been calculated on the base of the bulk thermoactivated anion sublattice defect recombination. The attained result correlate with the electron centres concentration for irradiated crystals. In the framework of the Auger-like anion defects recombinational bulk model of exoemission from irradiated wide-band-gap crystals, the energy spectra of the exoelectrons excited on the F-centres are attained.     

Thermally stimulated depolarization measurements on NaF:02-, NaCI:S2-.and KC1:S2-

In NaCl:S^2-, KC1:S² and NaF:0^2-(i) optical absorption and emission spectra and (ii) electric conductivity measurements show that after suitable heat treatment the bivalent anion impurities are paired with anion vacancies. Conventional dielectric absorption measurements and sensitive measurements of thermally stimulated depolarizing (t. s. d.) currents (ionic thermocurrent) have failed to detect the presence of bivalent anion-anion vacancy dipoles in these crystals. We suggest that derealization or sharing of the electron of the bivalent impurity ion, possibly with the vacancy, considerably reduces the dipole moment.     

Thermally stimulated depolarization currents and ionic conductivity of cubic lead fluoride containing small rare earth ions

Abstract

This work is concerned with thermally stimulated depolarization current (TSDC) and ionic conductivity studies in lead fluoride containing the small rare earths Dy, Ho, Er and Yb. The TSDC scans from 80 to 300 K show two peaks. For Pb_1?xEr_xF_2+x one is located at 106 K, and another, which is much stronger, occurs at about 160 K. The former is associated with a dipolar defect containing at least two rare earths and the latter is attributed to the development of F^? space charge during polarization of the sample. The activation energies obtained from both the high temperature TSDC peak and the ionic conductivity are the same, which corroborates the latter assignment. In addition, the ionic conductivity is shown to be independent of concentration. Those results can be understood of rare earth clustering, which is either absent or is unobservable dielectrically for large rare earths such as lanthanum, occurs extensively even at very low concentrations of the small rare earths. The explanation is that the majority of fluorine charge compensators are trapped by clusters.     

Relaxations and phase transitions phenomena in structurally related tyrosine-derived polyarylates

Abstract

A series of four tyrosine-derived polyarylates with different number of methylene groups in the backbone (y = 2, 4, 6 and 8) were studied by measuring thermally stimulated depolarization currents (TSDC). The low temperature TSDC spectra (80—240K) were analyzed at two different degrees of hydration to assess the effects of small amounts of water in the observed broad and complex β band. Higher temperature TSDC spectra (250 to 350 K) provided the α relaxation peaks associated with the glass transition temperature. The direct signal analysis (DSA) method allowed the decomposition of the complex peaks into elementary processes. The β_i components result from localized motions of molecular segments of variable length molecules whose identities were established in a prior study of polycarbonates. The changes observed in the low and high temperature polarization with the number of backbone methylene groups were interpreted as a combination of flexibility and entanglement phenomena.     

The role of alkali ions in the 190 K TSL peak in quartz

The role of alkali ions in the creation of the thermally stimulated luminescence (TSL) peak at 190 K in quartz has been investigated by wavelength resolved TSL and thermally stimulated current (TSC) measurements performed on synthetic crystals, both as grown and hydrogen swept, characterised by alkali content of about 1–3 and 0.1 ppm respectively. The 190 K peak has been efficiently produced in as-grown crystals by a double irradiation procedure consisting of a first x-ray irradiation at 90 K followed by heating in the 170–300 K temperature range and a second irradiation at 90 K; this effect has not been observed in the hydrogen swept crystal. Moreover, the study of the spectral composition of the emitted light has shown the existence of two emission bands, one peaking at 450 nm (T<150 K) and the second one evidenced for T>150 K and peaking at around 380 nm.

In as grown samples, TSC peaks at 205, 260 and at around 350 K (composite structure) have been detected: their intensities are much stronger in the as grown crystal and with the electric field oriented along the z-axis indicating that they have an ionic character. By taking into account the mechanism of formation of the [SiO₄/M⁺]⁰ (M⁺=Li⁺, Na⁺) traps (previously found to be responsible for the 190 K TSL peak), the 205 K TSC peak can be attributed to the radiation induced dissociation of alkalis from [AlO₄/M⁺]⁰ defect centres and subsequent migration near to Si sites; on the other hand, the 260 K TSC peak can be related to the subsequent disintegration of [SiO₄/M⁺]⁰ defects involving the migration of alkalis to different ionic traps.

PACS: 78.60.K–61.72.J–42.70.Ce     

Shallow energy levels induced by γ rays in standard and oxygenated floating zone silicon

Shallow defect levels in floating zone (FZ) and diffusion oxygenated FZ (DOFZ) silicon, before and after irradiation with a ⁶⁰Co γ-source up to 300 Mrad, have been studied by thermally stimulated currents (TSC) and deep level transient spectroscopy (DLTS) in the temperature range 4.2–110 K. Besides vacancy oxygen (VO) and interstitial-substitutional carbon (C_iC_s) emissions, several TSC peaks have been observed. A trap with an activation energy of 11 meV has been observed at 6 K only in irradiated DOFZ. Two hole traps at 80 meV and 95 meV have been observed both in irradiated FZ and DOFZ, while a trap at 100 meV, related to an interstitial-oxygen (IO₂) complex, has been revealed only in irradiated DOFZ. A TSC peak close to 24 K has been resolved into two components, whose concentrations are independent of irradiation fluence: a trap at 55 meV and a level which remains charged after emission at 80 meV. Our measurements confirm the formation, only in DOFZ, of a radiation induced donor at 230 meV. It appears to be responsible for the improved radiation hardness of oxygenated Si together with the suppression of deep acceptors, since no shallower radiation-induced donors have been detected in DOFZ samples. PACS 71.55.Cn; 29.40.Wk; 61.80.Hg; 61.82.Fk     

硝酸钾电解质溶液水化结构的分子动力学模拟

应用分子动力学方法对硝酸钾溶液中离子团簇的结构和离子的水化性质进行模拟研究．水分子采用简单点电荷模型，钾离子被看作带电硬球，硝酸根离子采用刚性四节点模型，同时考虑了节点间的库仑长程作用和L-J相互作用，库仑长程作用采用EWALD求和方法处理，得到了溶液中各种离子对的微观构型和径向分布函数，考察了溶液浓度对离子水化性质的影响．研究表明, 在KNO3溶液中存在一定程度的离子缔合，在高离子浓度情形，可以观察到二聚体、三聚体、溶剂分离阴阳离子对以及其它更复杂的离子团簇构型；离子水化数随离子浓度的升高而降低，对不同浓度的溶液得到的K+的水化数为5?7，NO3-的水化数为3.5?4.7，与蒙特卡罗模拟结果和飞行时间中子衍射实验的测量结果一致．     

Synthesis and Optical Properties of 1-Alkyl-3-Methylimidazolium Lauryl Sulfate Ionic Liquids

We report the synthesis of a new series of imidazolium-based halogen-free ionic liquids 1-alkyl-3-methylimidazolium lauryl sulfates. By reacting 1-methylimidazole (MIM) with butyl, hexyl, octyl, and decyl bromides and exchanging bromide ion with lauryl sulfate anion, a series of ionic liquids [RMIM][C₁₂H₂₅OSO₃] were produced. The high purity of these ionic liquids was verified with ¹H-NMR, ¹³C-NMR, FT-IR and mass spectrometry (MS), demonstrating the effectiveness of this synthetic approach. Solubility test of these ionic liquids showed that they are soluble in most organic solvents except nonpolar solvents such as hexane and cyclohexane. The optical properties of [BMIM]Br and [BMIM][C₁₂H₂₅OSO₃], where B refers to butyl, were examined. Both ionic liquids absorbed light in the UV region, yet essentially no absorption was recorded beyond 450 nm. Furthermore, both ionic liquids showed excitation wavelength-dependent fluorescence behavior. As an example, with an excitation wavelength of 360 nm, [BMIM][C₁₂H₂₅OSO₃] showed an emission band maximum at 447 nm. Increasing the excitation wavelength to 440 nm, the emission band maximum was shifted to ∼500 nm.     

Blue luminescence from the InGaN multiple quantum wells

We have fabricated very high-quality In_0.13Ga_0.87N/GaN multiple quantum wells with thickness as small as on (0 0 0 1) sapphire substrate using metal organic chemical vapour deposition (MOCVD). We have investigated these ultra-thin multiple quantum wells by continuous wave (cw) and time resolved spectroscopy in the picosecond time scales in a wide range of temperatures from 10 K to 290 K. In the luminescence spectrum at 10 K we observed a broad peak at 3.134 eV which was attributed to the quantum wells emission of InGaN. The full-width at half-maximum of this peak was 129 meV at 10 K and the broadening at low temperatures which was mostly inhomogeneous was thought to be due to compositional fluctuations and interfacial disorder in the alloy. The ultra narrow width of the quantum well was found to have a very profound effect in increasing the emission linewidth. We also observed an intense and narrow peak at 3.471 eV due to the GaN barrier. The temperature dependence of the luminescence was studied. The peak positions and intensities of the different peaks were obtained after a careful Lorentzian analysis. The activation energy of the InGaN quantum well emission peak was estimated as 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K. The results were explained by considering the localization of the excitons due to potential fluctuations. At higher temperatures the non-radiative recombination was found to be very dominant.     

Dipole defects in BeO

Thermally Stimulated Depolarization Currents (TSDC) technique was applied to study the effects of thermal treatments and gamma irradiation in the formation, aggregation and destruction processes of dipole defects in beryllium oxide (BeO). In this work, a TSDC dipole peak was observed at 350 K that was assigned to impurity-vacancy complexes. The TSDC peak presents a linear dependence with the Polarization Voltage (V_P), typical behaviour of defects with dipole origin. Thermal treatments of 1 h were performed between 400 and 900 °C and a decay in the peak intensity was observed. After the gamma irradiation of the thermal treated samples a restoration tendency of the TSDC peak was observed.     

Study of thermal currents in powder β-spodumene ceramics doped with Cuo, FeO and TiO2

Ternary-phase ceramic system of Li₂O Al₂O₃ 4SiO₂ doped with CuO, FeO and TiO₂ has been prepared and subjected to dc electrical conductivity and thermally stimulated depolarization current (TSDC) measurements as a function of temperature (30-250 °C) and field strength. The electrical conductivity results are explained by assuming both ionic and electronic conduction mechanisms coexist with different contributions over the whole temperature range of experiments. TSDC spectra have been found to be characterized by a broad intense relaxation peak, which can be attributed to an ionic charge polarization. The broad relaxation transitions are apparently a result of the nonuniform nature of this process. Activation energies are calculated for both dc electrical conductivity and TSDC according to Arrhenius equation and initial rise method, respectively.     

Influence of excitation light wavelength on the photoluminescence properties for ZnO films prepared by magnetron sputtering

Highly orientated polycrystalline ZnO films were deposited on sapphire, silicon and quartz substrates at room temperature by r.f. magnetron sputtering. Different photoluminescence (PL) spectra were observed when excited with different wavelength light. A UV emission peak (356 nm) and a blue peak (446 nm) were generated for the films on sapphire, silicon and quartz substrates, and only the 446 nm blue emission appeared for the films on glass substrates when the wavelength of the excitation light was 270 nm. With increasing the wavelength of the excitation light up to 300 and 320 nm, the UV emission disappeared for films on various substrates and the wavelength of the PL peaks increased up to 488 and 516 nm, respectively. When the wavelength of the excitation light increased to 398 nm, the PL spectrum becomes a wide band that is consistent with three emission peaks.     

注入Ar+的蓝宝石晶体退火前后光致发光谱的分析

对注入Ar⁺后不同晶面取向的蓝宝石晶体在不同退火条件下的光致发光谱进行了分析.分析结果表明:三种晶面取向的蓝宝石样品经Ar⁺注入后,其光致发光谱中均出现了新的位于506nm处的发光峰;真空和空气气氛下的退火均对样品在506nm处的发光有增强作用,不同晶面取向的样品发光增强程度不同,且发光增强至最大时的退火温度也不同,空气气氛下的退火使样品发光增强程度更为显著.由此可以看出,退火气氛、退火温度和晶面取向均对样品发光峰强度有影响. 关键词： 2O₃')" href="#">Al₂O₃ 离子注入 退火 光致发光谱     

纳米ZnO薄膜的光致发光性质

利用溶胶－凝胶法制备了纳米ZnO薄膜,室温下测量了样品的光致发光谱(PL)、吸收谱(ABS)、X射线衍射谱(XRD)．X射线衍射(XRD)的结果表明：纳米ZnO薄膜呈多晶状态,具有六角纤锌矿晶体结构和良好的C轴取向．观察到二个荧光发射带,中心波长分别位于395 nm的紫带、524 nm的绿带和450 nm附近的蓝带．证实了纳米ZnO薄膜绿光可见发射带来自氧空位(VO)形成的浅施主能级和锌空位(VZn)形成的浅受主能级之间的复合;450 nm附近的蓝带来自电子从VO的浅施主能级到价带顶或锌填隙(Zni) 到价带顶或导带底到VZn的浅受主能级的复合．     

Trap distribution changes in quenched KCl by heating or pressure

Pure Potassium chloride, when quenched rapidly from melt shows pronounced glow peak at 250°K. The intensity of the glow peak has been found to decrease by heating the specimen to around 450°K, or by subjecting it to pressure. A qualitative interpretation of these effects has been offered on the basis of quenched —in cation —anion vacancy pairs.     

Thermally stimulated luminescence properties of BaY 2 F 8 :Ce Crystals

Wavelength resolved thermally stimulated luminescence (TSL) measurements were performed on BaY 2 F 8 :1.8 v mol% Ce crystals after X-ray irradiation at 10 v K and at 300 v K, in order to obtain preliminary information about both trap levels and recombination centres. After irradiation at 10 v K, the TSL glow curve shows the presence of a strong peak at 50 v K, together with additional structures at approximately 20 and 170 v K. The TSL spectrum is dominated by the characteristic doublet emission due to transitions from the lowest energy level of the 5d configuration to the spin-orbit split 2 F ground state of Ce 3+ . Above RT, the glow curve exhibits a peak at 60 v C, whose spectrum is again dominated by Ce 3+ emission. The TSL emission is in accordance with radio-luminescence (RL) spectra performed in the 10-300 v K region. Moreover, RL spectra at temperatures lower than 200 v K display an additional weak high energy band at around 4.5 v eV assigned to host lattice transitions.