Influence of alloying elements on structure and some physical properties of quenched Sn–Sb alloy

We study the influence of ternary and quaternary alloying elements (Pb, Cd, Cu or Cu–Pb and Cu–Cd) on structural, electrical, hardness and other mechanical properties of Sn–Sb alloys (using an X-ray diffractometer and optical microscope, the double bridge method, Vickers hardness tester and the dynamic resonance method) to produce the best alloy for bearing applications. Adding Cu or Pb to Sn–Sb alloys improves their bearing properties, such as the mechanical properties (elastic modulus, internal friction, hardness and fracture strain) and thermal conductivity. Also, adding Cu, Pb or Cu–Pb to Sn–Sb alloys makes them excellent in their bearing applications and environmental hazards when compared with the Pb ₈₈Sn ₁₀Cu ₂ alloy for automotive applications (FIAT Normalizzazione) and the lead-based Babbitt bearing alloy.     

Effect of lead on microstructure and some physical properties of Sn–Zn–Cd alloy

The effect of lead on the structure, electrical resistivity, internal friction, elastic modulus and thermal properties of Sn₈₁Zn₉Cd₁₀ ternary alloys have been investigated using different experimental techniques with their analysis. In addition, properties of this alloy were compared with other Sn–Zn or Sn–Zn–Cd alloys and commercial solder alloys. It has a higher electrical resistivity, internal friction and lower elastic modulus when compared with Sn–Zn or Sn–Zn alloys with other additions such as Cd, Bi or In. The Sn₆₁Zn₉Cd₁₀Pb₂₀ alloy has a lower melting point, electrical resistivity and internal friction when compared with the commercial Pb–Sn solder alloy, but it has a similar elastic modulus.     

A study of Bi–Pb–Sn–Cd–Sb penta-alloys rapidly quenched from melt

Optical microscopy, X-ray diffractometry, the double bridge method, the Vickers microhardness testing and dynamic resonance techniques have been used to investigate structure, electrical resistivity, hardness, internal friction and elastic modulus of quenched Bi–Pb–Sn–Cd–Sb penta-alloys. The properties of these penta-alloys are greatly affected by rapid quenching. The intermetallic compound χ(Pb–Bi) or Bi₃Pb₇ is obtained after rapid quenching using the melt-spinning technique, and this is in agreement with reports by other authors [Marshall, T. J., Mott, G. T. and Grieverson, M. H. (1975). Br. J. Radiol., 48, 924; Kamal, M., El-Bediwi, A. B. and Karman, M. B. (1998). Structure, mechanical properties and electrical resistivity of rapidly solidified Pb–Sn–Cd and Pb–Bi–Sn–Cd alloys. J. Mater. Sci.: Mater. Electron., 9, 425; Borromêe-Gautier, C., Giessen, B. C. and Grrant, N. J. (1968). J. Chem. Phys., 48, 1905; Moon, K.-W., Boettinger, W. J., Kattner, U. R., Handwerker, C. A. and Lee, D.-J. (2001). The effect of Pb contamination on the solidification behavior of Sn–Bi solders. J. Electron. Mater., 30, 45.]. The quenched Bi_43.5Pb_44.5Cd₅Sn₂Sb₅ alloy has important properties for safety devices in fire detection and extinguishing systems.     

Modifications induced by swift heavy ions in rapidly solidified Sn–8.5Sb–5.5Cu alloy

Alloys of composition Sn–8.5Sb–5.5Cu (in atomic percent) were rapidly solidified by a melt-spinning technique. The samples were irradiated at room temperature with GeV uranium ions of fluences between 9×10⁸ and 9×10¹¹ ions cm^?2. X-ray diffraction analysis revealed the formation of a new-phase Cu₁₁Sb₃ as well as a reduction in the axial ratio (c/a) of the matrix (β -Sn) indicating the regular re-arrangement of atoms. Scanning force microscopy showed no surface topographic changes with the ion fluence. The mechanical properties (Young's modulus and hardness) of the irradiated alloys were studied as a function of ion fluence. The radiation-annealing process is discussed in terms of the evolution of both resistivity and hardness as a function of ion fluence.     

Characterization of bismuth–tin–lead and bismuth–tin–lead–cadmium fusible alloys

Microstructure, electrical, mechanical and thermal properties of quenched bismuth–tin eutectic, Rose (Bi₅₀Sn_22.9Pb_27.1) and Wood’s (Bi₅₀Sn_12.5Pb₂₅Cd_12.5) alloys have been investigated using scanning electron microscopy, X-ray diffraction analysis, the double bridge method, the dynamic resonance method, Vickers hardness measurement and thermal analysis. Wood’s alloy (Bi–Pb–Sn–Cd) has low electrical resistivity and melting point but a high elastic modulus and internal friction when compared with the Rose (Bi–Pb–Sn) alloy. The presence of cadmium in Wood’s alloy decreases its melting point and electrical resistivity with an increase in its elastic modulus, which improves the mechanical properties. Wood’s alloy (Bi–Pb–Sn–Cd) has better properties, which make it useful in various applications such as in protection shields for radiotherapy, locking of mechanical devices and welding at low temperature.     

Effect of copper addition on some properties of rapidly solidified lead-free Sn–-10 wt% Zn alloys

This study aimed at investigating the effect of adding copper (Cu) on some properties of the lead-free alloys which rapidly solidified from melt. X-ray analysis, hardness, elastic modulus, electrical conductivity and resistivity were studied. The results indicated that the alloy hardness and elastic modulus improved by increasing the copper (Cu) content and decreasing the zinc (Zn) content. The electrical conductivity ranged from 0.250 to 0.847?×?10⁷ ohm^?1 m^?1 for the alloy under study. The electrical resistivity increases linearly with temperature until the melting point is reached. The residual resistivity results from disturbances in the lattice rather than caused by thermal vibration and the most drastic increases in the residual resistivity are caused by foreign atoms in solid solution with matrix metal. The electrical resistivity values ranged from 11.8 to 40?×?10^?8 ohm m, when the copper content changed from 0.0 to 2.0 wt% and zinc changed from 8.0 to 10.0 wt%.     

Correlation study of structural,electrical and mechanical properties of quenched tin–zinc–cadmium solder alloys

It is important, for electronic application, to decrease the melting point of SnZn₉ solder alloy because it is too high as compared with the most popular eutectic Pb–Sn solder alloy. Adding Cd causes structural changes such as phase transformations, dissolution of atoms and formation of Cd crystals in the quenched SnZn₉ alloy, and its physical properties are affected by this change. For example, the melting point is decreased towards the melting point of the Pb–Sn eutectic alloy, or even much less. The structure, electrical and mechanical properties of quenched Sn_{91? x} Zn₉Cd _x (x?=?0 or x?≥?5) alloys have been investigated. Adding Cd to a quenched SnZn₉ alloy increases its electrical resistivity and decreases its elastic modulus and internal friction. The Sn₇₁Zn₉Cd₂₀ alloy has the lowest melting point (162 °C) and electrical and internal frictions as compared with commercial Pb–Sn solder alloys.     

The large low-field magnetic entropy changes in Ni43Mn46Sn11−xSbx alloys

A series of Ni₄₃Mn₄₆Sn_11−xSb_x (x=0, 1, and 3) alloys were prepared by an arc melting method. The martensitic transition shifts to higher temperature with the increasing Sb content. The isothermal magnetization curves and Arrott plots around martensitic transition temperatures show a typical metamagnetic behavior. Under a low applied magnetic field of 10 kOe, large magnetic entropy changes around the martensitic transition temperature are 10.4, 8.9, and 7.3 J/kg K, for x=0, 1, and 3, respectively. The origin of the large magnetic entropy changes and potential application for Ni₄₃Mn₄₆Sn_11−xSb_x alloys as working substances in magnetic refrigeration are discussed.     

X-ray photoemission spectra measurements of CeNi2Sb2 and CeCu2Sb2

X-ray photoemission spectra, resistivity and susceptibility of CeNi₂Sb₂ and CeCu₂Sb₂ were measured and are discussed. The results indicate that these alloys are Kondo systems. For comparison of the valence band properties, the spectra of the isostructural alloys of RT₂X₂-type with R = La, Gd, T = Cu, Ni and X = Sn, Sb were investigated, too.     

Structural studies of nanocrystalline SnO2 doped with antimony: XRD and Mössbauer spectroscopy

A series of Sb-doped SnO₂ samples, with doping levels 0, 3.1, 6.2, 11.9 and 14.0 at% Sb, has been hydrothermally prepared and characterized by X-ray powder diffraction. Diffraction lines were broadened, the line broadening being anisotropic. Both the line broadening and line anisotropy were dependent on the Sb doping level. The samples are tetragonal, space group P4₂/mnm and isostructural with TiO₂(rutile). Sb doping of SnO₂ causes the increase of unit-cell parameters. The structure of pure SnO₂ and of samples containing 6.2 and 11.9 at% Sb has been refined by the Rietveld method. Crystal structure indicated that both Sb³⁺ and Sb⁵⁺ are substituted for Sn⁴⁺ in the SnO₂ structure, Sb³⁺ being dominant for the investigated doped samples. The samples were also examined by ¹¹⁹Sn- and ¹²¹Sb-Mössbauer spectroscopy. Mössbauer spectroscopy confirmed the XRD results. Also, the values of the isomer shifts and quadrupole coupling constants indicated that the configuration around the Sb³⁺ site includes the presence of the stereochemically active lone pair electrons.     

A Subnanoscale Investigation of Sb Segregation at MnO/Ag Ceramic/Metal Interfaces

We have studied Sb segregation at MnO/Ag(Sb) ceramic/metal heterophase interfaces employing three-dimensional atom-probe (3DAP) microscopy. Specimens are prepared by the internal oxidation of Ag(Mn) alloys, leading to the formation of nanometer-size MnO precipitates within a Ag(Mn) matrix. Sb is introduced into the internally oxidized specimens with a vapor diffusion treatment. Appreciable Sb segregation is observed only after a subsequent segregation anneal is performed, and the measured interfacial excess of Sb at the MnO/Ag(Sb) interfaces, _Sb ^MnO/Ag, is determined directly. The temporal evolution of the MnO precipitates is followed for the different processing steps employed. It is shown that the concentration of silver within the MnO precipitates decreases from an initial value of 45–50 at.% Ag to less than 5 at.% Ag with increasing annealing time at the different processing temperatures. Thus the MnO precipitates form under paraequilibrium conditions and the precipitates inherit Ag from the matrix. With increasing aging time orthoequilibrium conditions prevail and the MnO precipitates reject the silver atoms they inherited from the matrix.     

Search for localized phonon modes inlead-based alloys by superconducting tunneling

To investigate the appearance of localized phonon modes, superconductive tunneling was performed into films of Pb_0·9M_0·1 (M = Ag, Cd, Ga, Ge, In, Mg, Mg, Sb, Sn, Te, Zn) and Pb_0·97Sn_0·03. The films were quench-condensed and later annealed at 30, 100 and 300°K. Structure in tunneling curves resulting from localized phonons was observed only for a well annealed In alloy film. For most of the impurities an absence of observable local phonon modes could be explained as due to a lack of solid solubility or of sufficient structural order in the film. For Na and Sn alloys, however, these arguments cannot be used. No modes could be seen for such alloys even in films condensed at room temperature, heat-treated slightly, and quenched directly into liquid helium.     

Dendritic growth and solute trapping in rapidly solidified Cu-based alloys

Rapid solidification of binary Cu-22%Sn peritectic alloys and Cu-5%Sn-5%Ni-5%Ag quaternary alloys was accomplished by glass fluxing, drop tube and melt spinning methods. The undercooled, by glass fluxing method, Cu-22%Sn peritectic alloy was composed of α(Cu) and δ(Cu41Sn11) phases. If rapidly solidified in a drop tube, the alloy phase constitution changed from α(Cu) and δ(Cu41Sn11) phases into a single supersaturated (Cu) phase with the reducing of droplet diameter, and the maximum solubility of Sn in (Cu)...     

Hyperfine magnetic fields on Cd impurity in the Pd2MnIn1-xSnx and Pd2MnSn1-ySby heusler alloys

The TDPAC technique was used to measure the magnetic hyperfine field (mhf) acting on Cd impurity in the Heusler alloys Pd₂MnIn_1-xSn_x and Pd₂MnSn_1-ySb_y for various values of x and y in the range 0 ? x, y ? 1. The alloys of Pd₂MnIn_1-xSn_x are antiferromagnetic at the In-rich end and ferromagnetic at the Sn-rich end, with a transition region x ≈ 0.5?0.7 where both phases coexist; the alloys containing Sn/Sb are ferromagnetic for all values of y. The mhf on the Cd impurity in the antiferromagnetic, transition and ferromagnetic regions of Pd₂MnIn_1-xSn_x are respectively zero, -150 and -200 kOe. For the Sn/Sb alloys the field changes from -200 at the Sn-rich end to -235 kOe at the Sb-rich end. The values of the field very closely follow the trend of the ferromagnetic Curie temperatures for the same alloys as a function of the s-p electron concentration. The observed large distribution of field intensities (～20%) and the lower values of the field in the region x = 0.5?0.6 are attributed mainly to the effect of antiferromagnetic domains. The results are compared with previous Mössbauer mhf measurements at the sites of Sn and Sb in the same alloys as well as with measurements in other Heusler alloys.     

Microstructures and thermoelectric properties of GeSbTe based layered compounds

Microstructures and thermoelectric properties of Ge₁Sb₂Te₄ and Ge₂Sb₂Te₅ chalcogenide semiconductors have been investigated to explore the possibility of their thermoelectric applications. The phase transformation from the face-centered cubic to hexagonal structure was observed in Ge₂Sb₂Te₅ compounds prepared by the melt spinning technique. The Seebeck coefficient and electrical resistivity of the alloys were increased due to the enhanced scattering of charge carriers at grain boundaries. The maximum power factors of the rapidly solidified Ge₁Sb₂Te₄ and Ge₂Sb₂Te₅ attained 0.975×10^-3 W m^-1K^-2 at 750 K and 0.767×10^-3 W m^-1K^-2 at 643 K respectively, higher than those of water quenched counterparts, implying that thermoelectric properties of GeSbTe based layered compounds can be improved by grain refinement. The present results show this class of chalcogenide semiconductors is promising for thermoelectric applications. PACS  84.60.Rb; 81.05.Hd; 72.20.Pa; 64.70.Kb; 61.66.Fn     

Growth of tertiary dendritic arms during the transient directional solidification of hypoeutectic Pb–Sb alloys

Despite the importance of a complete characterization of dendritic patterns in castings, the availability of studies on the development of tertiary dendrite arms is scarce in the literature. In the present study, the tip cooling rate, local solidification time, primary and tertiary dendrite arm spacings have been determined in Pb–Sb alloys castings directionally solidified under unsteady-state heat flow conditions. The alloys compositions experimentally examined are widely used in the as-cast condition for the manufacture of positive and negative grids of lead-acid batteries. The initial growth of tertiary dendritic arms from the secondary branches was found to occur only for a Pb–3.5 wt% Sb alloy at cooling rates in the range 0.4–0.2?K/s, with no evidence of this spacing pattern for Pb–Sb alloys having lower solute content. Tertiary dendritic branches have been observed along the entire casting lengths for alloys of the Pb–Sb hypoeutectic range having compositions higher than 4.0 wt% Sb. It is shown that a power function experimental law with a characteristic ?0.55 exponent is able to characterize the tertiary spacing evolution with the solidification cooling rate for alloys compositions ≥4.0 wt% Sb. The only exception was the Pb–3.5 wt% Sb alloy for which λ ₃ exhibited significant lower values when compared with the experimental values obtained for the other Pb–Sb alloys for a same solidification cooling rate.     

First-principle study of electronic structure and stability of Sn0.5Sb0.5O2

A theoretical study on Sb-doped SnO₂ has been carried out by means of periodic density functional theory (DFT) at generalized gradient approximation (GGA) level. Stability and conductivity analyses were performed based on the formation energy and electronic structures. The results show that Sn_0.5Sb_0.5O₂ solid solution is stable because the formation energy of Sn_0.5Sb_0.5O₂ is −0.06 eV. The calculated energy band structure and density of states showed that the band gap of SnO₂ narrowed due to the presence of the Sb impurity energy levels in the bottom of the conduction band, namely there is Sb 5s distribution of electronic states from the Fermi level to the bottom of conduction band after the doping of antimony. The studies provide a theoretical basis to the development and application of Sn_1−xSb_xO₂ solid solution electrode.     

Effects of annealing and additions on dynamic mechanical properties of SnSb quenched alloy

The elastic modulus, internal friction and stiffness values of quenched SnSb bearing alloy have been evaluated using the dynamic resonance technique. Annealing for 2 and 4 h at 120, 140 and 160 °C caused variations in the elastic modulus, internal friction and stiffness values. This is due to structural changes in the SnSb matrix during isothermal annealing such as coarsening in the phases (Sn, Sb or intermetallic compounds), recrystallization and stress relief. In addition, adding a small amount (1 wt.%) of Cu or Ag improved the bearing mechanical properties of the SnSb bearing alloy. The SnSbCu₁ alloy has the best bearing mechanical properties with thermo-mechanical stability for long time at high temperature.     

Effects of nitrogen doping on the properties of Ge15Sb85 phase-change thin film

The effects of nitrogen doping on the chemical bonding state, microstructure, electrical property and thermal stability of Ge₁₅Sb₈₅ film were investigated in detail. The doped N atoms tend to bond with Ge to form Ge₃N₄, as proved by X-ray photoelectron spectroscopy analyses. X-ray diffraction patterns showed that both undoped and N-doped Ge₁₅Sb₈₅ films crystallize into a hexagonal phase very similar to Sb. The thickness reduction upon crystallization for undoped and N-doped Ge₁₅Sb₈₅ films is less than 5%. The crystalline resistivity, crystallization temperature, and thermal stability of amorphous state all increase after nitrogen doping, while the grain size decreases. By adding 7.0 at.% N into the Ge₁₅Sb₈₅ film, the crystalline resistivity increases twelve times and the crystallization temperature increases about 50 °C. The maximum temperature for 10-year retention of amorphous Ge₁₅Sb₈₅ film is estimated to be 147 °C and that of N-doped films is even higher, which will promise better data retention of phase-change random access memory especially in the high-temperature application.     

Pressure dependence of the electric field gradient in Sb and Sb1−x M x (M=ln,Zn, Ge,Pb, Cd,Sn) at the site of111Cd

Using the¹¹¹Cd-TDPAC (time differential perturbated angular correlation) method, the pressure dependence of the electric field gradient (EFG) in Sb and Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn) was investigated. The application of a phenomenological ansatz for the parametrisation of the pressure and temperature dependence of the EFG made it possible to combine temperature data gained in former studies [1], [2] with the pressure dependent data presented in this paper. The resulting pressure dependence of –2±0.2 MHz/kbar is shown to be independent of concentration and element of admixture. Results for the volume and explicit temperature dependence agree with existing information on the mixed system Sb_1–x M _x (M=ln, Zn, Ge, Pb, Cd, Sn); the investigation of the EFG in Sb_1–x–y M _x Pb _y showed that the resulting EFG may be interpreted as the weighted sum of the individual contributions of the two metals.This paper is dedicated to Prof. Dr. W. Kreische on the occasion of his 60th aniversary on 02.02.1995