Lu5Ir4Si10 whiskers: Morphology,crystal structure,superconducting and charge density wave transition studies

Highly perfect single crystal whiskers of Lu₅Ir₄Si₁₀ were successfully grown out of the melt. Details of the surface and morphology of the whiskers are presented. X-ray diffraction data confirmed that the whisker structure has the same tetragonal P4/mbm space group symmetry as bulk single crystals with lattice parameters a=12.484(1) and c=4.190(2) Å. By means of field emission scanning electron microscopy, the morphology of the whiskers has been studied. Using a 4-circle X-ray diffractometer we found that whiskers grow along the c-axis direction and all side faces are oriented along the [1 1 0] direction. The mosaicity has been measured and is found to be almost perfect: below 0.15° along the c-axis. According to our transport measurements performed along the c-axis, the whiskers present a sharp superconducting transition at T_c=4.1 K and show a charge density wave (CDW) transition at 77 K. From the hysteresis of the temperature dependance of the electrical resistivity study, the CDW transition is found to be of first order.     

Large-size and high-quality Zn2TiO4 single crystal grown by the optical floating zone method

Crack-free and transparent Zn₂TiO₄ single crystals of 4–6 mm in diameter and 30 mm in length have been grown by the optical floating zone method. The powder X-ray diffraction (XRD) results show that the as-grown crystals have the spinel-type Zn₂TiO₄ structure. XRD² measurements on Zn₂TiO₄ wafers cut perpendicular to the growth direction display only one peak at 42.7°, which indicates that the Zn₂TiO₄ single crystals grow along the 〈4 0 0〉 direction (a-axis). The formation of bubble inclusions was effectively suppressed by lowering rotation rate. Transmission polarized-light microscopy results showed that as-grown crystals were free of low angle grain boundaries.     

Crystal growth of KInO2 from a hydroxide flux

Single crystals of KInO₂ were obtained from a reactive potassium hydroxide flux at 700 °C. KInO₂ crystallizes in the R-3m crystal system with a=3.2998(10) Å, c=18.322(10) Å and V=172.78(12) Å³. The crystal structure is isotypic with that of α-NaFeO₂ and consists of the (1 1 1) layers being occupied alternately by KO₆ and InO₆ octahedra. Three different AInO₂ structure types are discussed.     

Flux growth and characterizations of NdPO4 single crystals

Neodymium phosphate single crystals, NdPO₄, have been grown by a flux growth method using Li₂CO₃-2MoO₃ as a flux. The as-grown crystals were characterized by X-ray powder diffraction(XRPD), differential thermal analysis (DTA) and thermogravimetric analysis (TG) techniques. The results show that the as-grown crystals were well crystallized. The crystal was stable over the temperature range from 26 to 1200 °C in N₂. The specific heat of NdPO₄ crystal at room temperature was 0.41 J/g °C. The absorption and the fluorescence spectra of NdPO₄ crystal were also measured at room temperature.     

Crystal growth and characterization of K2B4O11H8

Single crystals of K₂B₄O₁₁H₈, a non-centrosymmetric borate material, have been prepared by slow evaporation of water solution at room temperature. The crystals were colorless and transparent with smooth faces. The single-crystal X-ray diffraction analysis showed that K₂B₄O₁₁H₈ crystallized in the orthorhombic space group P2₁2₁2₁ with a=6.8556(6) Å, b=11.7787(12) Å, c=12.8949(14) Å, Z=4, R₁=0.0188, and wR₂=0.0464. The powder X-ray diffractometry (PXRD), infrared spectrum, transmittance spectrum, TG–DTA curves and second harmonic generation properties of title compound have been determined.     

Crystal growth and luminescent properties of Pr-doped K(Y,Lu)3F10 single crystal for scintillator application

Pr1%:K(Y_1−xLu_x)₃F₁₀ (x=0, 0.2, 0.4) single crystals were grown by the μ-PD method. All the grown crystals were greenish and perfectly transparent without any inclusions or cracks. Radioluminescence spectra and decay kinetics of the Pr1%:K(Y,Lu)₃F₁₀ crystals were measured. Emission from the Pr³⁺ 5d–4f transition, peaking around 260 nm and of the decay time of around 22 ns were observed. The 5d–4f emission intensities of the Pr1%:K(Y,Lu)₃F₁₀ crystals were higher than that of the standard BGO scintillator.     

Submicron rectangular hollow tube crystals of rutile-type GeO2

Single crystals of rutile-type GeO₂ having a structure equivalent to that of TiO₂, a well-known photocatalyst, have been grown for the first time in supercritical oxygen at approximately 5 GPa and 3000 K. The obtained crystals exhibit a rectangular hollow tube structure with submicron size (cross section with sides of ∼500 nm, wall thickness of ∼20 nm, and longitudinal length of ∼5 μm). These single crystals were grown within 1 s and along the c-axis surrounded by the (1 1 0) faces. The crystal growth mechanism strongly depends on the growth mechanism of rutile-type oxides, and the extremely short growing time is an important factor in the formation of hollow tube crystals.     

Floating-zone growth of large high-quality CoAl2O4 single crystals

We report the first successful floating-zone growth of high-quality CoAl₂O₄ single crystals with volume up to 1 cm³ free from inclusions and sub-grains. The neutron rocking curves of the CoAl₂O₄ crystal have the width of about 0.30 degree proving the excellent quality of the grown samples. X-ray synchrotron experiments show that crystals have spinel structure with the lattice constant a₀=8.09853(1) Å. Magnetization measurements give the effective magnetic moment μ_eff=4.63 μ_B per Co⁺² ion in a good agreement with previous measurements on ceramic samples.     

Ammonothermal epitaxy of wurtzite GaN using an NH4I mineralizer

Purely wurtzite phase needle crystals and epitaxial layers of GaN were grown by the ammonothermal method using an NH₄I mineralizer. The inclusion of zincblende phase GaN was effectively eliminated by increasing the growth temperature higher than 500 °C. Accordingly, an approximately 20-μm-thick GaN epitaxial layer was achieved on the Ga-polar face of a c-plane GaN seed wafer at 520 °C. Although the characteristic deep state emission band dominated the room temperature photoluminescence spectrum, the near-band-edge emission of GaN was observed for both the needle crystals and the epitaxial layers. These results encourage one to grow better quality GaN crystals at a high growth rate under high-temperature growth conditions.     

Crystal growth, characterization and spectroscopic study of europium-doped NaY(PO3)4

Europium-doped NaY(PO₃)₄ single crystals have been synthesized by the flux method with sizes around 1 mm³. The unit cell parameters at room temperature refined by X-ray powder diffraction are a=7.1510(4) Å; b=13.0070(8) Å; c=9.6973(2) Å; β=90.606(3)°, Z=4 with the space group P2₁/n in monoclinic system. The present single crystals have a needle shape, they are elongated along the a crystallographic direction, and their size is in the 500 μm–1 mm range. The linear thermal expansion tensor parameters were determined, being the maximum value along the b direction, 16.1×10⁻⁶ K⁻¹ and the minimum along the a direction being 11.7×10⁻⁶ K⁻¹. The IR vibration modes attributed to the group P–O are consistent with the crystallographic data concerning the chain aspect of the phosphate anion. This material melts incongruently at 1141 K. Intense visible emissions attributed to Eu^{3+ 5}D₀→⁷F₁, ⁵D₀→⁷F₂ and ⁵D₀→⁷F₄, electronic transitions have been observed after pumping at 355 nm at room temperature.     

Crystal growth and spectroscopic properties of erbium doped Lu2SiO5

A high optical quality erbium doped Lu₂SiO₅ single crystal has been grown by the Czochralski method. The distribution coefficient of Er³⁺ was measured to be ∼0.926. The absorption and emission spectra as well as the fluorescence decay curve of the excited state ⁴I_13/2 were measured at room temperature. The spectroscopic parameters were calculated using the Judd–Ofelt theory, and the J–O parameters Ω₂, Ω₄ and Ω₆ were found to be 4.451×10^-20, 1.614×10^-20 and 1.158×10^-20 cm², respectively. The room-temperature fluorescence lifetime of the Er³⁺⁴I_13/2→⁴I_15/2 transition was measured to be 7.74 ms. The absorption and emission cross-section as well as the gain cross-section in the eye-safe regime of 1400–1700 nm were also determined and discussed.     

Growth of epitaxial TmFeCuO4 thin films by pulsed laser deposition

Epitaxial thin films of TmFeCuO₄ with a two-dimensional triangular lattice structure were successfully grown on yttria-stabilized-zirconia substrates by pulsed laser deposition and ex situ annealing in air. The films as-deposited below 500 °C showed no TmFeCuO₄ phase and the subsequent annealing resulted in the decomposition of film components. On the other hand, as-grown films deposited at 800 °C showed an amorphous nature. Thermal annealing converted the amorphous films into highly (0 0 1)-oriented epitaxial films. The results of scanning electron microscopic analysis suggest that the crystal growth process during thermal annealing is dominated by the regrowth of non-uniformly shaped islands to the distinct uniform islands of hexagonal base.     

Flux growth and morphology analysis of Na3VO2B6O11 crystals

Colorless and transparent Na₃VO₂B₆O₁₁ (NVB) crystal has been grown by the top seeded solution growth method using NaVO₃ as the flux at cooling rates of 0.8–1.5 °C/day, in the temperature range 610–650 °C. A well-developed morphology of the crystals was observed and analyzed. The grown crystals were characterized by powder X-ray diffraction (PXRD), infrared spectroscopy and second harmonic generation (SHG) test.     

Growth and characterization of the nonlinear optical single crystal: l-lysine acetate

Single crystals of l-lysine acetate, an organic nonlinear optical (NLO) material, were grown by the controlled evaporation of its aqueous solutions. Its solubility in aqueous solution was determined gravimetrically. The grown crystals were characterized by the single-crystal diffraction, X-ray powder diffraction, Fourier transform infrared and Raman spectra. The structure analysis reveals that it belongs to the monoclinic crystallographic system, space group P2₁, with cell parameters: a=5.420(2) Å, b=7.542(4) Å, c=12.653(1) Å, β=91.73(1)°, Z=2 and V=516.8 Å³. Experiments of thermogravimetric (TG) and differential thermal analysis (DTA) were carried out to study its thermal properties. The optical behaviours, including transmission spectrum and second harmonic generation (SHG), were investigated to study its linear and NLO properties.     

Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

CuPt-ordering and phase separation were directly investigated in In_1-xGa_xAs_yP_1-y with a low arsenic content grown by organometallic vapor phase epitaxy on GaAs substrates. CuPt-ordering and phase separation in samples grown at the substrate temperatures of 630 and 690 °C were characterized by transmission electron diffraction and transmission electron microscopy. Although the immiscibility of InGaAsP was enhanced at the lower substrate temperature, the sample grown at 630 °C showed less phase separation than the 690 °C-grown sample. The degree of CuPt-ordering was significantly enhanced in the sample grown at 630 °C. The results demonstrated that the CuPt-ordering originating from surface reconstruction of P(2×4) suppressed the phase separation even in the miscibility gap. The detailed characterization of the phase separation clearly revealed a vertical composition modulation (VCM) in InGaAsP for the first time. The mechanism of the VCM formation is discussed based on the modulated-strain field on the surface.     

Growth and optical properties of self-frequency-doubling laser crystal Yb:LuAl3(BO3)4

Single crystal of Yb:LuAl₃(BO₃)₄(Yb:LuAB) was grown by the flux method for the first time. The cell parameters of the grown crystal were estimated by X-ray diffraction analysis. The result indicates the symmetry of trigonal space group R32, with lattice parameters a=b=9.26372 Å, c=7.21405 Å, V=536.14 Å³, and Z=4. The absorption and emission spectra of Yb:LuAB crystal at room temperature has also been studied. The fluorescence lifetime for Yb:LuAB crystal is about 1.48 ms. The heat capacity was measured from 25 to 500 °C. Its second harmonic generation efficiency in LuAl₃(BO₃)₄ crystal is 3–4 times that of KDP crystal. These results show that Yb:LuAB crystal would be a potential self-frequency-doubling laser crystal.     

Ca3N2 as a flux for crystallization of GaN

In this work Ca₃N₂ was investigated as a potential flux for crystallization of GaN. Melting temperature of the potential flux at high N₂ pressure evaluated by thermal analysis as 1380 °C is in good agreement with the theoretical prediction. It is shown that Ca₃N₂ present in the liquid gallium in small amount (1 at%) dramatically accelerates synthesis of GaN from its constituents. On the other hand, it does not influence significantly the rate of GaN crystallization from solution in gallium in temperature gradient for both unseeded and seeded configurations. However the habit and color of the spontaneously grown GaN crystals change drastically. For 10 mol% Ca₃N₂ content in the liquid Ga it was found that the GaN thick layer and GaN crystals (identified by micro-Raman scattering measurements) were grown on the substrate. For growth from molten Ca₃N₂ (100%) with GaN source, the most important observations were (i) GaN source material was completely dissolved in the molten Ca₃N₂ flux and (ii) after experiment, GaN crystals were found on the sapphire substrate.     

A study on structural formation and optical property of wide band-gap Be0.2Zn0.8O layers grown by RF magnetron co-sputtering system

Wide band-gap BeZnO layers were grown on Al₂O₃ (0 0 0 1) substrate using radio-frequency magnetron co-sputtering. The rate of Be_xZn_1−xO crystallized as a hexagonal structure was x=0.2. From the X-ray photoelectron spectroscopy measurement, the O–Zn bonds relating the crystal structure and the Be–O bonds related to the deviation of the stoichiometry in the BeZnO layer were caught at 530.4 and 531.7 eV in the O 1s spectrum, respectively. Thus, the observance on the Be 1s peak of 113.2 eV associated with the bonding Be–O indicates that the sputtered Be atoms are substituted for the host-lattice site in ZnO. This Be–O bonding shows a relatively low intense and broadening spectrum caused by large fluctuation of Be content in the BeZnO layer. From the photoluminescence and transmittance measurement, the free exciton and the neutral donor-bound exciton (D⁰, X) emissions were observed at 3.7692 and 3.7313 eV, respectively, and an average transmittance rate over 95% was achieved in a wide ultraviolet (UV)–visible region. Also, the binding energy for the (D⁰, X) emission was extracted to be 37.9 meV. Through the wide band-gap material BeZnO, we may open some possibilities for fabricating a ZnO-based UV light-emitting diode to be utilized as a barrier layer comprised of the ZnO/BeZnO quantum well structure and/or an UV light emitting material itself.     

Characterization of bulk GaN crystals grown from solution at near atmospheric pressure

The properties of GaN crystals grown from solution at temperatures ranging from 780 to 810 °C and near atmospheric pressure ∼0.14 MPa, have been investigated using low temperature X-band (∼9.5 GHz) electron paramagnetic resonance spectroscopy, micro-Raman spectroscopy, photoluminescense spectroscopy, and photoluminescence imaging. Our samples are spontaneously nucleated thin platelets of approximate dimensions of 2×2×0.025 mm³, or samples grown on both polycrystalline and single crystal HVPE large-area (∼3×8×0.5 mm³) seeds. Electron paramagnetic resonance spectra consists of a single Lorentzian line with axial symmetry about the c-axis, with approximate g-values, g_∥=1.951 and g_⊥=1.948 and a peak-to-peak linewidth of∼4.0 G. This resonance has been previously assigned to shallow impurity donors/conduction electrons in GaN and attributed to Si- and/or O impurities. Room temperature photoluminescence and photoluminescence imaging data from both Ga- and N-faces show different dominant emission bands, suggesting different incorporation of impurities and/or native defects. Raman scattering and X-ray diffraction show moderate to good crystalline quality.     

Growth of (CH3)2NH2CuCl3 single crystals using evaporation method with different temperatures and solvents

The bulk single crystals of low-dimensional magnet (CH₃)₂NH₂CuCl₃ (DMACuCl₃ or MCCL) are grown by a slow evaporation method with different kinds of solvents, different degrees of super-saturation of solution and different temperatures of solution, respectively. Among three kinds of solvent, methanol, alcohol and water, alcohol is found to be the best one for growing MCCL crystals because of its structural similarity to the raw materials and suitable evaporation rate. The best growth temperature is in the vicinity of 35 °C. The problem of the crystals deliquescing in air has been solved through recrystallization process. The crystals are characterized by means of X-ray diffraction, specific heat and magnetic susceptibility.