Vortex dynamics in two-dimensional Josephson junction arrays with asymmetrically bimodulated potential

On the basis of resistively-shunted junction dynamics, we study vortex dynamics in two-dimensional Josephson junction arrays with asymmetrically single and bimodulated periodic pinning potential for the full range of vortex density f. The ratchet effect occurring at a certain range of temperature, current, and f, is observed in our simulation. We explain the microscopic behavior behind this effect by analyzing the vortex distribution and interaction. The reversal of the ratchet effect can be observed at several f values for a small driven current. This effect is stronger when the asymmetric potential is simultaneously introduced in two directions.     

On possibility of the spontaneous magnetic flux in a Josephson junction containing magnetic impurities

The Josephson junction containing localized magnetic moments in a dielectric layer between two superconductors is considered. Conditions are studied under which the phase difference between superconductors in the state with energy minimum is equal to π (such a junction we call π-junction). In addition we consider “one-dimensional” Josephson junction one part (2) of which is π-junction, the other (1) being the usual Josephson junction ( 0 - junction). Conditions are found under which in such a system there is a spontaneous vortex with the centre at the boundary between the parts 1 and 2 and magnetic flux associated with this vortex. The vortex appears by second order phase transition as temperature decreases for T_c.     

Josephson current through a ferromagnetic semiconductor/semiconductor/ferromagnetic semiconductor structure

We theoretically calculate the Josephson current for two superconductor/ferromagnetic semiconductor (SC/FS) bilayers separated by a semiconductor (SM) layer. It is found that the critical Josephson current I_C in the junction is strongly determined by not only the relative orientations of the effective exchange field of the two bilayers and scattering potential strengths at the interfaces but also the kinds of holes (the heavy or light) in the two FS layers. Furthermore, a robust approach to measuring the spin polarization P for the heavy and light holes is presented.     

A new scheme for measuring itinerant spin polarizations

An optical method for the measurement of itinerant electron spin polarization is proposed. It is based on the idea that when an itinerant electron is injected into a p-type semiconductor with a valence band spin orbit splitting ? kT, the polarization of the resulting recombination radiation is characteristic of the spin polarization. The feasibility and advantages of this technique are discussed.     

Anomalous pair currents in Josephson junction

An mechanism for the anomalous peak in the I–V characteristics of the Josephson junction is proposed which is due to the creation of quasiparticle pairs by the self-induced a.c. voltage.     

Dependence of the maximal superconducting current on the resonance frequency in a shunted Josephson junction

We have analyzed the phase dynamics and current–voltage characteristics of a Josephson junction shunted by an LC circuit. When the Josephson frequency ω _J becomes equal to the natural frequency ω_rc of the formed resonance circuit, the I–V curve acquires additional branches. We have studied the features of the rc branch and the superconducting circuit for different values of the resonance frequency. It is shown that the maximal superconducting current through the Josephson junction on the rc-branch depends on the resonance frequency and is determined by the closeness of the end point of the rc branch to the critical current. We have determined the dependence of the maximal superconducting current on the resonance frequency for different values of the dissipation parameters. The limiting value of the maximal superconducting current is independent (to within 1%) of the parameters of the system.     

Josephson current in ferromagnetic d-wave superconductor/ferromagnetic d-wave superconductor junction

We solve a self-consistent equation for the d-wave superconducting gap and the effective exchange field in the mean-field approximation, study the Zeeman effects on the d-wave superconducting gap and thermodynamic potential. The Josephson currents in the d-wave superconductor (S)/insulating layer (I)/d-wave S junction are calculated as a function of the temperature, exchange field, and insulating barrier strength under a Zeeman magnetic field on the two d-wave Ss. It is found that the Josephson critical currents in d-wave S/d-wave S junction depend to a great extent on the relative orientation of the effective exchange field of the two S electrodes, and the crystal orientation of the d-wave S. The exchange field can under certain conditions enhance the Josephson critical current in a d-wave S/I/d-wave S junction.     

Current-phase relation of double-barrier Josephson junctions with a two-gap superconductor as intermediate electrode

The current-phase (I-?) relation of a double-barrier Josephson junction with a two-gap superconductor as intermediate electrode is derived by means of a simplified version of Ohta’s model. As in conventional double-barrier Josephson junctions, a marked skewness in the I-? curves is present. Moreover, as in heterotic Josephson devices, a reduction of the maximum Josephson current is predicted. An appropriate experiment to verify the rich behavior of this type of Josephson device is suggested.     

Tunable supercurrent in superconductor/normal metal/superconductor Josephson junctions

When two superconductors are connected by a weak link a supercurrent flows determined by the difference in the macroscopic quantum phases of the superconductors. Originally, this phenomenon was discovered by Josephson for the case of a weak link formed by a thin tunnel barrier. The supercurrent I is related to the phase difference ϕ through the Josephson current–phase relation, I = I_csin ϕ, with I_c, the critical current, depending on the properties of the weak link. A similar relation holds for weak links consisting of a normal metal, a semiconductor or a constriction . In all cases, the phase differenceϕ =  0 when no supercurrent flows through the junction, and ϕ increases monotonically with increasing supercurrent until the critical current is reached. Using nanolithography techniques we have succeeded in making and studying a Josephson junction with a normal metal weak link, in which we have direct access to the microscopic current-carrying states inside the link. We find that the fundamental Josephson relation can be changed fromI = I_csin ϕ toI = I_csin(ϕ + π), i.e. to a π -junction, by suitably controlling the energy distribution of the current-carrying states in the normal metal. This fundamental change in the way these Josephson junctions behave has potential implications for their use in superconducting electronics as well as (quantum) logic circuits based on superconductors.     

Quantum efficiency for degenerate p-type photoluminescence and electroluminescence in GaAs crystals2

The radiative lifetime and the internal quantum efficiency for the degenerate p-type photoluminescence and the electroluminescence in GaAs crystals have been investigated with a simplified model of degenerate semiconductors in which the recombination constant B is approximately proportional to the ?$\text{5}\text{8}$power of the hole concentration. It is suggested that the radiative lifetime reaches a minimum at some hole concentration, in good agreement with the prediction of Dumke. At 77 K, the internal quantum efficiency exhibits a maximum, found to be 100% at 5 × 10¹⁸ cm^?3 for p-type GaAs crystals, in perfect agreement with experiments of Cusano, and for p-n GaAs junction crystals η_int, _max = 60% at 3 × 10¹⁸cm^?3. Finally, it is noted that in degenerate p-type GaAs crystals, the internal quantum efficiency increases linearly with increasing temperatures.     

Josephson effect in supercondutor/ferromagnetic semiconductor/superconductor junctions

Using a general expression for dc Josephson current, we study the Josephson effect in ballistic superconductor (SC)/ferromagnetic semiconductor (FS)/SC junctions, in which the mismatches of the effective mass and Fermi velocity between the FS and SC, spin polarization P in the FS, as well as strengths of potential scattering Z at the interfaces are included. It is shown that in the coherent regime, the oscillatory dependences of the maximum Josephson current on the FS layer thickness L and Josephson current on the macroscopic phase difference φ for the heavy and light holes, resulting from the spin splitting energy gained or lost by a quasiparticle Andreev-reflected at the FS/SC interface, are much different due to the different mismatches in the effective mass and Fermi velocity between the FS and the SC, which is related to the crossovers between positive (0) and negative (π) couplings or equivalently 0 and π junctions. Also, we find that, for the same reason, Z and P are required not to surpass different critical values for the Josephson currents of the heavy and light holes. Furthermore, it is found that, for the dependence of the Josephson current on φ, regardless of how L,Z, and P change, the Josephson junctions do not transit between 0 and π junctions for the light hole.     

Anomalous Josephson vortex solutions in Josephson junctions with multiple tunneling channels

We construct a theory for Josephson junction with multiple tunneling channels. We focus on two situations, i.e., a heterotic junction composed of two-gap-superconductor, insulator, and one-gap-superconductor, and a grain-boundary junction formed by two identical multi-gap superconductors. Then, we show that the magnetic field distribution of the Josephson vortex for ±s-wave superconductivity is much more enlarged than that for s-wave without sign change between the order parameters. We display such anomalous vortices and suggest how to evaluate the enlargement.     

Application of nano-scale Josephson junction as phase sensitive detector for analysis of vortex states in mesoscopic superconductors

We study phase shifts in a Josephson junction induced by vortices in superconducting mesoscopic electrodes. The position of the vortices are controlled by suitable geometry of a nano-scale Nb–Pt_1−xNi_x–Nb junction of the overlap type made by Focused Ion Beam (FIB) sculpturing. The vortex is kept outside the junction, parallel to the junction plane. From the measured Fraunhofer characteristics the entrance and exit of vortices are detected. By changing the bias current through the junction at constant magnetic field the vortices can be manipulated and the system can be switched between two consecutive vortex states which are characterized by different critical currents of the junction. A mesoscopic superconductor thus acts as a non-volatile memory cell in which the junction is used both for reading and writing information (vortex). Furthermore, we observe that the critical current density of Nb–Pt_1−xNi_x–Nb junctions decreases non-monotonously with increasing Ni concentration. It exhibits a minimum at ∼40 at.% Ni, which is an indication of switching into the π state.     

Thermoelectric ac Josephson effect in SNS junctions

It was experimentally evidenced, that Josephson radiation from an SNS junction exists, when a heat flow across the junction exceeds a critical value P_c. The ac component of the thermoelectric voltage was observed directly. The heat-flux-voltage characteristic of a TaCuTa junction showed steps of constant voltage, when the junction was irradiated by an external electromagnetic field at frequenct ～ 10² Hz.     

Temperature dependence of thermoelectric properties of Ni-doped CoSb3

Temperature dependences of the Hall coefficient, Hall mobility and thermoelectric properties of Ni-doped CoSb₃ have been characterized over the temperature range from 20 to 773 K. Ni-doped CoSb₃ is an n-type semiconductor and the conduction type changes from n-type to p-type at around 450 K. The temperature for the transition from n-type to p-type increased with increasing Ni content x. The Seebeck coefficient reaches a maximum value near the transition temperature. The electrical resistivity indicates that Co_1−xNi_xSb₃ is a typical semiconductor when x≤0.03 and a degenerate semiconductor when x>0.03. Thermal conductivity analyses show that the lattice component is predominant at lower temperatures and carrier and bipolar components become large at temperatures higher than the transition temperature. The thermoelectric figure of merit reaches a maximum value close to the transition temperature and the largest value, 4.67×10⁻⁴ K⁻¹ at 600 K, was obtained for x=0.05.     

Josephson junction with two superconducting current components

The properties of a Josephson junction with the 2π- and 4π-periodic superconducting current component have been analyzed. In the range of low voltages, such a junction exhibits the 4π periodicity of the phase difference for the Majorana current amplitude much smaller than the Josephson current, which makes it possible to observe Josephson current oscillations with a fractional period for small dissipation β < 1 in the hysteresis region. The effect the 4π-periodic Majorana current component is also manifested in a change in the sequence of steps in the ladder structure emerging on the current–voltage (I–V) characteristic of the junction. We have determined the interval of external electromagnetic radiation amplitudes, in which the manifestation of the fractional Josephson effect on the I–V characteristic is most significant.     

Superconducting vortex line in Josephson junction

The superconducting ring closed with the half infinite plane Josephson junction is considered. The external magnetic flux is introduced in the ring with the external source supplied solenoid.The conditions of stability are found for the superconducting vortex in the plane Josephson junction. The function φ(φ_x) is derived. Here φ is the total magnetic flux in the hole. This function differentiates from the same function in the case of the ring closed. with the point contact.     

Photoelectron characteristics of diode structures based on quantum-well GaAs/InGaAs heteronanostructures with a Mn δ-doped layer

A GaAs layer over Mn is found to acquire p-type conductivity in Au(Ni)/n-GaAs/InGaAs diode heteronanostructures due to laser δ-doping of Mn with a density of 0.15–1.5 monolayers, yielding the formation of a p-n junction in the Schottky barrier. The effect of the shunting of diode structures by the ohmic resistance of the Mn δ-doped layer and a p-n junction outside the Schottky electrode is revealed. This effect is found to disappear after the formation of mesadiodes. The current-voltage characteristics of the mesadiodes with Mn cannot be described by the mechanism of thermionic emission through the barrier, and the current in these mesadiodes flows with the participation of thermal-field and field emission. A compensated region in the n-GaAs buffer layer, adjacent to the δ-doped layer, formed due to the laser deposition of a coating layer is found. The length of this region decreases with reduction in the layer-production temperature. A substantial increase in the effective surface potential barrier in the semiconductor (up to 1.05 V) in structures with Mn was revealed, and the photoelectric activity and depth of Mn layer occurrence in the forbidden band of GaAs energies is revealed.     

SrTiO3基片上Tl-2212双晶约瑟夫森结的动态特性及噪声影响研究

在SrTiO₃（STO）基片上制作了Tl-2212双晶约瑟夫森结,并对其进行了微波辐照下的I-V特性测试,观察到了夏皮罗台阶,符合约瑟夫森电压-频率关系.利用数值仿真对约瑟夫森结建立了RCSJ模型,仿真结果与实验数据符合较好,利用此模型深入研究了噪声对结动态特性的影响,解释了噪声影响下结的微波感应台阶幅度减小和极小值展宽现象,提出了有效噪声温度为工作温度和外部噪声的等效温度之和. 关键词： RCSJ模型 噪声 Tl-2212双晶约瑟夫森结