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1.
《Current Applied Physics》2015,15(6):722-726
The electron transport through ferromagnetic/normal/ferromagnetic silicene junction with an induced energy gap is investigated in this work. The energy gap can be tuned by applying electric field or exchange fields due to the buckled structure of silicene. We analyze the local electric field, exchange field, length of normal region-dependence transmission probabilities of four groups and valley conductance. These transmission probabilities and valley conductance can be turned on or off by adjusting the local electric field and exchange field. In particular, a fully valley polarized conductance with 80% transmission is found in this junction, which can be caused by the interplay of valley-dependent massive Dirac electron, the exchange potential and the on-site potential difference of sublattices. Our findings will benefit applications in silicene-based high performance nano-electronics.  相似文献   

2.
The feasibility of generating polarized and unpolarized current in silicene by means of quantum pumping is discussed within the framework of Floquet scattering matrix. Charge pumping current is induced at zero magnetization splitting whereas spin and valley pumping current emerge when the symmetry between Dirac points K and K′ is broken. The intensity and direction of pumped current are shown to be dependent on pumping amplitude, phase between barriers, exchange energy and electric field. By careful control of external parameters, it is demonstrated that the ferromagnetic-silicene junction could be operated as a pump device that generates pure spin and valley pumping current.  相似文献   

3.
We propose two possible spin valves based on a zigzag silicene nanoribbon(ZSR) ferromagnetic junction. By using the Landauer–B u¨tikker formula, we calculate the spin-resolved conductance spectrum of the system and find that the spin transport is crucially dependent on the band structure of the ZSR tuned by a perpendicular electric field. When the ZSR is in the topological insulator phase under a zero electric field, the low-energy spin transport and its ON and OFF states in the tunneling junction mainly rely on the valley valve effect and the edge state of the energy band, which can be electrically modulated by the Fermi level, the spin–orbit coupling, and the local magnetization. When a nonzero perpendicular electric field is applied, the ZSR is a band insulator with a finite energy gap, the spin switch phenomenon is still preserved in the device and it does not come from the valley valve effect, but from the energy gap opened by the perpendicular electric field. The proposed device might be designed as electrical tunable spin valves to manipulate the spin degree of freedom of electrons in silicene.  相似文献   

4.
邵怀华  郭丹  周本良  周光辉 《中国物理 B》2016,25(3):37309-037309
We address velocity-modulation control of electron wave propagation in a normal/ferromagnetic/normal silicene junc tion with local variation of Fermi velocity, where the properties of charge, valley, and spin transport through the junction ar investigated. By matching the wavefunctions at the normal-ferromagnetic interfaces, it is demonstrated that the variation of Fermi velocity in a small range can largely enhance the total conductance while keeping the current nearly fully valley and spin-polarized. Further, the variation of Fermi velocity in ferromagnetic silicene has significant influence on the valley and spin polarization, especially in the low-energy regime. It may drastically reduce the high polarizations, which can b realized by adjusting the local application of a gate voltage and exchange field on the junction.  相似文献   

5.
We investigate the electronic transport in a silicene-based ferromagnetic metal/ferromagnetic insulator/ferromagnetic metal tunnel junction. The results show that the valley and spin transports are strongly dependent on local application of a vertical electric field and effective magnetization configurations of the ferromagnetic layers. In particular, it is found that the fully valley and spin polarized currents can be realized by tuning the external electric field. Furthermore, we also demonstrate that the tunneling magnetoresistance ratio in such a full magnetic junction of silicene is very sensitive to the electric field modulation.  相似文献   

6.
《中国物理 B》2021,30(10):107302-107302
We study the Goos–H?nchen-like shift of single silicene barrier under the external perpendicular electric field, offresonant circularly polarized light and the exchange field modulation using the stationary-phase method. The results show that the Goos–H?nchen-like shift of silicene resulting from the external perpendicular electric field does not have the characteristics of spin or valley polarization, while that from off-resonant circularly polarized light or the exchange field is spin-polarized. More importantly, the combined effect of the external perpendicular electric field and the exchange field or off-resonant circularly polarized light can cause the Goos–H?nchen-like shift of the system to be spin and valley polarized.It is particularly worth noting that when the three modulations are considered at the same time, as the exchange field changes, the system will have a positive or negative Goos–H?nchen-like shift.  相似文献   

7.
8.
The spin transparency at the normal/ferromagnetic metal(NM/FM) interface was studied in Pt/YIG/Cu/FM multilayers. The spin current generated by the spin Hall effect(SHE) in Pt flows into Cu/FM due to magnetic insulator YIG blocking charge current and transmitting spin current via the magnon current. Therefore, the nonlocal voltage induced by an inverse spin Hall effect(ISHE) in FM can be detected. With the magnetization of FM parallel or antiparallel to the spin polarization of pure spin currents(σ(sc)), the spin-independent nonlocal voltage is induced. This indicates that the spin transparency at the Cu/FM interface is spin-independent, which demonstrates that the influence of spin-dependent electrochemical potential due to spin accumulation on the interfacial spin transparency is negligible. Furthermore, a larger spin Hall angle of Fe_(20)Ni_(80) (Py) than that of Ni is obtained from the nonlocal voltage measurements.  相似文献   

9.
《Physics letters. A》2006,355(1):77-80
In this Letter, we calculate the magnetostatic modes of a semi-infinite lateral ferromagnetic/ferromagnetic superlattice with the effective-medium theory and present the general features of the modes. The numerical calculations for Co/Ni superlattice show some interesting properties which different from the lateral ferromagnetic/nonmagnetic superlattice. Two branches of the surface modes appear for the superlattice. Comparing with the surface magnetostatic modes of bulk Ni, one branch of the mode is of high frequency; the other branch of mode is of low frequency.  相似文献   

10.
侯海燕  姚慧  李志坚  聂一行 《物理学报》2018,67(8):86801-086801
研究了基于硅烯的静电势超晶格、铁磁超晶格、反铁磁超晶格中谷极化、自旋极化以及赝自旋极化的输运性质,分析了铁磁交换场、反铁磁交换场以及化学势对输运性质的影响,讨论了电场对谷极化、自旋极化以及赝自旋极化的调控作用.结果表明:当3种超晶格的晶格数达到10以上时,在硅烯超晶格中很容易实现100%的谷极化、自旋极化和赝自旋极化,而且通过调节超晶格上的外加电场可以使极化方向发生翻转,从而在硅烯超晶格中实现外电场对谷自由度、自旋自由度以及赝自旋自由度的操控.  相似文献   

11.
王辉  胡贵超  任俊峰 《物理学报》2011,60(12):127201-127201
基于紧束缚模型和格林函数方法,研究了有机磁体晶格扰动和侧基自旋取向扰动对金属/有机磁体/金属三明治结构有机自旋器件自旋极化输运特性的影响.计算结果表明:晶格扰动的存在降低了器件的起始偏压,减小了导通电流,并使得电流-电压曲线的量子台阶效应不再显著,扰动不太强时电流仍呈现较高的自旋极化率;而侧基自旋取向扰动减小了体系的自旋劈裂,增加了器件的起始偏压,低偏压下随着扰动的增强器件电流及其自旋极化率明显降低.进一步模拟了温度对器件自旋极化输运的影响. 关键词: 有机自旋电子学 有机磁体 自旋极化输运 自旋过滤  相似文献   

12.
田宏玉  汪军 《中国物理 B》2012,21(1):17203-017203
We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions. The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon. It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived, the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG, while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect, in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations. Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.  相似文献   

13.
We investigate the spin-dependent electron transport in single and double normal/ferromagnetic/normal zigzag graphene nanoribbon (NG/FG/NG) junctions.The ferromagnetism in the FG region originates from the spontaneous magnetization of the zigzag graphene nanoribbon.It is shown that when the zigzag-chain number of the ribbon is even and only a single transverse mode is actived,the single NG/FG/NG junction can act as a spin polarizer and/or a spin analyzer because of the valley selection rule and the spin-exchange field in the FG,while the double NG/FG/NG/FG/NG junction exhibits a quantum switching effect,in which the on and the off states switch rapidly by varying the cross angle between two FG magnetizations.Our findings may shed light on the application of magnetized graphene nanoribbons to spintronics devices.  相似文献   

14.
We theoretically calculate the Josephson current for two superconductor/ferromagnetic semiconductor (SC/FS) bilayers separated by a semiconductor (SM) layer. It is found that the critical Josephson current IC in the junction is strongly determined by not only the relative orientations of the effective exchange field of the two bilayers and scattering potential strengths at the interfaces but also the kinds of holes (the heavy or light) in the two FS layers. Furthermore, a robust approach to measuring the spin polarization P for the heavy and light holes is presented.  相似文献   

15.
We study magnetic proximity effect induced low-energy spin transport in the normal/ferromagnetic junction of a semi-infinite zigzag graphene nanoribbon. Due to the absence of a spin flip in a single interface, the spin transfer in this model can be described by the two-spin channel model. We identify each spin channel as either a perfect conducting or a non-conducting channel. This feature leads to spin filter in symmetric zigzag graphene nanoribbon and spin precession in antisymmetric zigzag graphene nanoribbon, and helps to directly determine the exchange-splitting intensity directly, even without an external auxiliary bias.  相似文献   

16.
刘艳芬  刘晶会  贾城 《物理学报》2008,57(3):1897-1901
用等效介质理论计算了半无限侧向铁磁/铁磁超晶格的推迟模式.且以Co/Ni体系超晶格为例具体计算了该超晶格的表面模式和体模式,展示出一些与磁性/非磁性超晶格不同的有趣性质.侧向磁性/磁性超晶格具有较复杂的推迟模式,这是一种具有高度一般性的体系,在改变构成超晶格的两种铁磁层的厚度的比值、外场时,可以调节两支表面模式的频率以及体模式的频带,这种调节作用是与两种铁磁层的饱和磁化值有关的.当饱和磁化值相差较大时,调制效果是很明显的.当第二种铁磁介质饱和磁化值趋于零时,该体系演变成熟知的磁性/非磁性超晶格.当取麦克斯 关键词: 铁磁/铁磁超晶格 推迟模式 等效介质理论 自旋波谱  相似文献   

17.
We solve a self-consistent equation for the d-wave superconducting gap and the effective exchange field in the mean-field approximation, study the Zeeman effects on the d-wave superconducting gap and thermodynamic potential. The Josephson currents in the d-wave superconductor (S)/insulating layer (I)/d-wave S junction are calculated as a function of the temperature, exchange field, and insulating barrier strength under a Zeeman magnetic field on the two d-wave Ss. It is found that the Josephson critical currents in d-wave S/d-wave S junction depend to a great extent on the relative orientation of the effective exchange field of the two S electrodes, and the crystal orientation of the d-wave S. The exchange field can under certain conditions enhance the Josephson critical current in a d-wave S/I/d-wave S junction.  相似文献   

18.
Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.  相似文献   

19.
We report spin transport through the silicon in novel magnetic junction with half metallic as free layer and metallic as pinned layer. We used La0.7Sr0.3MnO3 as free layer, FeCo as pinned layer and studied the magnetoresistance through silicon as spacer layer. We fabricated this magnetic tunnel junction using RF/DC sputtering technique over SrTiO3 substrate. Tunneling magnetoresistance (TMR) measurement for this junction at room temperature was found to be 1.1 %. At 2 K, we found a large magnetoresistance of 396 %. TMR found to be increased with decreasing temperature. The results are discussed.  相似文献   

20.
We consider a model for a single molecule with a large frozen spin sandwiched in between two BCS superconductors at equilibrium, and show that this system has a π junction behavior at low temperature. The π shift can be reversed by varying the other parameters of the system, e.g., temperature or the position of the quantum dot level, implying a controllable π junction with novel application as a Josephson current switch. We show that the mechanism leading to the π shift can be explained simply in terms of the contributions of the Andreev bound states and of the continuum of states above the superconducting gap. The free energy for certain configuration of parameters shows a bistable nature, which is a necessary pre-condition for achievement of a qubit.  相似文献   

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