Infrared Optical Characterization of PLT Thin Films for Applications in Uncooled Infrared Detectors

Lanthanum-modified lead titanate (PLT) thin films have been grown directly on Pt/Ti/SiO₂/Si (100) and LaNiO₃/Si (100) substrates by a modified sol-gel method. X-ray diffraction analysis shows that the PLT thin films are polycrystalline. The infrared optical properties of the thin films were investigated using infrared spectroscopic ellipsometry (IRSE) in the spectral range of 2.5–12.5 m. By fitting the measured ellipsometric parameter (tan and cos) data with a three phase model (air/PLT/Pt) for the PLT thin films on Pt/Ti/SiO₂/Si (100) and a four phase model (air/PLT/LNO/Si) for the PLT thin films on LaNiO₃/Si (100) substrates, and a derived classical dispersion relation for the thin films, the optical constants and thicknesses of the thin films have been simultaneously obtained. The refractive index and extinction coefficient of the PLT thin films on Pt/Ti/SiO₂/Si (100) substrates are slightly larger than those on LaNiO₃/Si (100) substrates. Given the infrared semitransparent metal of Nickel currently used, the absorption of the Ni/PLT/Pt and Ni/PLT/LNO/Si multilayer thin films in this study is very large around 3.0 m and 5.7 m wavelength range and decrease to 15% or 20% in the 8–12.5 m wavelength region.     

The paramagnetic state (μ+e−) in silicon and tellurium at high temperature

The paramagnetic state (⁺e^–) in Si and Te was observed in a longitudinal magnetic field. The mean lifetimes of these states were obtained: _Si = 1.45(3) s, _Te = 12.5(8) s at 290 K, _Te = 12(2) s at 250 K.     

Towards slow μ− production via muon catalyzed fusion

Slow ^– production via dd-CF using a two-layer arrangement is investigated. To determine its feasibility, experimental measurements are now in progress using the muonic X-ray detection method. The following experimental steps are being considered: (1) measurement of the number of ^– stopped inside a solid H₂/D₂ layer by detecting p K X-rays, (2) hot d emission detection by placing a secondary target at a distance of 10–30 mm from the layer and by detecting specific delayed X-rays, (3) measurement of the disappearance of d emission as the added D₂ layer is increased, (4) dd-CF measurement by detecting fusion protons, and (5) slow ^– emission detection. Results of the initial test experiment are presented.     

Trilinear generally covariant equations

Field equations for n-frames h ^a that are possible in the theory of absolute parallelism are considered. It is shown that in three cases the equations can, after the substitution h ^a =H^pH ^a (H=det H ^a , p is an n-dependent constant), be written in a trilinear form that contains only the matrix H _a and its derivatives and not H ^a . It is shown that the equations are still regular for degenerate but finite matrices H _a if rank H _a 2.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 22–27, February, 1991.     

Feasibility of an experiment to determine the branching ratio for the emission of a heavy neutrino after muon capture in3He

The triton energy of the muon capture reaction ³He t+v, where ³ He is the ground state of muonic³He, has been measured in order to investigate a possible heavy v admixture into the flavour with high sensitivity. ³ He has been formed via the pd fusion reaction by stopping ^– in an ionization chamber (IC) filled with an H/D gas mixture of 3% D concentration at a pressure of 161 bar. In a first short experiment 650 triton events were observed yielding an upper limit for the -heavy v mixing strength of 2.3×10^–3 atE _0v=60 MeV.     

Magnetic moments of Gd nuclei

Low temperature nuclear orientation experiments down to 2 mK on¹⁴⁷GdFe,¹⁴⁹GdFe,¹⁴⁹GdGd and¹⁵³GdGd have yielded the magnetic hyperfine interaction strength. Bhf as 31.0(1.6) _NT, 28.3(2.0) _NT, 33.8(4.7) _NT and 13.3(2.1) _NT respectively. From these values the respective ground state magnetic moments ¦¦ of¹⁴⁷Gd,¹⁴⁹Gd and¹⁵⁹Gd were deduced as 1.12(20) _N, 1.01(16) _N and 0.40(8) _N.     

The formation of glassy alloys by irradiation with intense proton beams

Using a 50 ns pulse of an intense proton beam 1.5 J cm^–2 of energy was deposited in a 1 m thick surface layer of glass forming alloys. In Fe₈₀B₂₀, the formation of a glassy surface layer of 1.9 m thickness was observed by x-ray diffraction. Etching experiments performed with alloys containing phosphorus yielded similar results. Applying a mask technique amorphous and crystalline zones were structured with a resolution of better than 2 m.On leave from Central Electronics Engineering Research Institute, Pilani, Rajasthan, India     

On the Haar measure of the quantumSU(N) group

We prove that the Haar state associated to the compact matrix quantum groupSU (N) is faithful for ]–1,1[,0, and anyN2.     

Systematic study of muon transfer to sulphur dioxide

In a systematic study of the transfer process to sulphur dioxide, in seven different H₂ + SO₂ gas mixtures, the time spectra of the muonic sulphur X-rays yield muon transfer rates to the SO₂ molecule, deduced from the lifetimes of the p atoms, which agree all well with each other. The muonic oxygen time spectra show an additional structure as if p atoms of another kind were present. Reduced transfer rates_O are reproducible if one uses the model of ephemeral p atoms. The intensity ratios between the different kinds of p atoms are also discussed in the framework of this model and the one of black and white p atoms.     

High quality,high-<Emphasis Type="Italic">k</Emphasis> gate dielectric: amorphous LaAlO<Subscript>3</Subscript> thin films grown on Si(100) without Si interfacial layer

High-k dielectric amorphous LaAlO₃ thin films have been grown on n-type Si(100) substrates by laser molecular beam epitaxy. The interfacial characteristics of the LaAlO₃ films on Si were measured by high-resolution transmission electron micrography and X-ray photoemission spectroscopy. A sharp interface without a silica inter-layer between the LaAlO₃ film and Si substrate was observed. Atomic force microscopy measurements indicated that the root-mean-square surface roughness within a 2m×2m area of the LAO films was 0.12 nm. The flatband voltage and fixed charge density of the 8 nm thickness LaAlO₃ films were about 0.355 V and 1.8×10¹²/cm², respectively. The leakage currents of the LaAlO₃/Si(100) samples with different film thicknesses of 5, 8 and 12 nm were 0.45, 0.23 and 0.05 mA/cm², respectively, at a +1 V dc bias voltage. LaAlO₃ appears to be one of the most promising high dielectric constant materials for use in future ultra large scale integrated devices. PACS 77.55+f; 77.84.Bw; 73.40.Qv     

New cascade laser transitions in CH2F2 pumped with the 9R32 line of a cw CO2 laser

New cascade laser transitions of¹²CH₂F₂ at 172.50m, 208.83m, 220.44m, 223.99m and 250.61m are reported. A waveguide FIR laser was pumped with a quasi cw¹²C¹⁶O₂ laser operating on the 9R32 line. Together with the already known lines at 184.3m, 196.1m and 235.9m, the laser lines can be assigned to rotational transitions in the ₉ vibrational band of¹²CH₂F₂ and to refill transitions of the vibrational ground state ₀.     

Stochastic coupling and thermodynamic inequalities

Let ₁ and ₂ be thermodynamic Gibbs measures on ^m and ⁿ , respectively. Diffusions are constructed having ₁, and ₂ as invariant measures. These diffusions are then coupled; inequalities between expectations of certain random variables on the two spaces result.Partially supported by NSF-MCS 74-07313-A03     

High efficiency cw far infrared lasers at 119 μm and 127 μm

The optically pumped FIR laser lines at 119 m from CH₃OH and at 127 m from¹³CD₃OH are known to be the most powerful in the far infrared spectral region. We report on efficiency measurements for our waveguide laser system. The effect of various parameters was investigated, resulting in the highest efficiency ever reported for the 119 m line. The Stark effect and others parameters of the 127 m were measured, and a new¹³CD₃OH laser line at 175 m discovered, with the same pump transition. These measurements are helpful for completing the assignment already proposed for the 127 m line.     

Further investigations on ir pumping of CH3OD and CD3OD by a cw CO2 laser

Respectively, 41 and 36 new cw far-infrared lasing lines have been observed using a waveguide resonator in CH₃OD and CD₃OD pumped by a low-pressure CO₂ laser emitting in the 9.4, 10.4 m regular bands and in the 10.8 m hot band. The wavelength range was 46.6 m–1.67 mm in CH₃OD and 53.6 m–1 mm in CD₃OD.     

Fock representations of the affine Lie algebraA 1 (1)

The aim of this note is to show that the affine Lie algebraA ₁ ⁽¹⁾ has a natural family _, ,v of Fock representations on the spaceC[x _i,y _j;i andj ], parametrized by (,v) C ². By corresponding the highest weight _, of _, to each (,), the parameter spaceC ₂ forms a double cover of the weight spaceC₀C –₁ with singularities at linear forms of level –2; this number is (–1)-times the dual Coxeter number. Our results contain explicit realizations of irreducible non-integrable highest wieghtA ₁ ⁽¹⁾ -modules for generic (,v).     

An approximation method to solve Einstein's field equations on a curved background metric

An approximation method is developed to calculate the gravitational field of a matter sourceT moving on a curved background metric that is an exact solution of the field equations and deviates only weakly from flat space-time. The fieldh of the sourceT is supposed to be much smaller than the curved part of the background, so that in the series expansion ofh each order can be expanded in powers of the background.     

Algebraisch spezielle Einstein-Räume mit einer Bewegungsgruppe

In algebraically special Einstein spaces (R_v=0) with a hypersurfaceorthogonal spacelike Killing vector field _v, the trajectories of the multiple eigen null directions k lie — except one case — in the subspacesV ₃ orthogonal to _v (k=0) and are hypersurface-orthogonal. The solutions with vanishing expansion (k_,;=0, Kundt's class) can be determined explicitly.     

The Optimum Operation of an Unified Mini-Optically Pumped NH3 Submillimeter Wave Laser

An unified miniature optically pumped NH₃ submillimeter wave laser (OPSMMWL), including a mini TEA-CO₂ pump laser, was developed. It lased successfully with coherent emission at 67.2m, 90.4m and 151.5m. The optimum operation of the unified mini-OPSMMWL was studied experimentally and the relations among SMMW laser output power, operating gas pressure, length and coupling condition of the cavity were measured. It has been found that buffer gas N₂ has significant effect on 67.2m and 151.5m emissions and very wide band SMMW laser emission was a common feature of the mini-OPSMMW cavity laser.     

Determination of in-depth thermal strain distribution in Molecular Beam Epitaxy GaAs on Si

In-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress state at different distances to the interface GaAs/Si, layers of different thickness were prepared by chemical etching of the grown samples. We observe a non-uniform residual strain distribution through the GaAs on Si epilayer. Residual strain of thermal origin is larger in the highly defective region ( 0.4 m) near the GaAs/Si interface where we have found a non-elastic relation between measured in-plane (a ) and in growth direction (a ) lattice parameters. However, thermal strain is partially relaxed by formation of 10⁷ cm^–2 dislocations in the region of better crystalline quality near the external surface.     

Muonium in semiconductors: Recent experimental developments

Recent experiments covering a range of problems including the nuclear hyperfine structure of bond-centered muonium in diamond and GaP, charge-cycling reactions of muonium in Si at high temperatures, muonium state dynamics in Si probed by RF-SR, and endohedral muonium in semiconducting C₆₀ compounds, are discussed. These examples show that as traditionalSR techniques are continually being refined and new methods are being developed,SR is becoming an increasingly powerful tool to investigate the behavior of muonium and the in many respects analogous, and technologically relevant, hydrogen centers in semiconductors.