High efficiency antireflection coating in MWIR region (3.6–4.9 μm) simultaneously effective for Germanium and Silicon optics

Antireflection coatings have critical importance in thermal imaging system working in MWIR region (3–5 μm) since optics of high refractive index materials are used. Germanium (Ge) and Silicon (Si) optics are used extensively in the MWIR thermal systems. In this paper a study has been carried out on the design and fabrication of multi-substrate antireflection coating effective for Germanium and Silicon optics in MWIR (3.6–4.9 μm) region. The wave band 3.6–4.9 μm is chosen for the reported work because detector system used in MWIR region has a band selection filter effective in the same wavelength region and atmospheric transmission window in MWIR region is effective in 3–5 μm spectral band. Comprehensive search method was used to design the multilayer stack on the substrate. The coating materials used in the design were Germanium (Ge), Hafnium oxide (HfO₂) and Y-Ba-Fluoride (IR-F625). The fabrication of coating was made in a coating plant fitted with Cryo pump system and residual gas analyzer (RGA). The evaporation was carried out at high vacuum (2–6 × 10^?6 mbar) with the help of electron beam gun system and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 98.5% average transmission in 3.6–4.9 μm band for Germanium and Silicon optics. This work will be helpful in reducing the plant operation time, material and power consumption, as two different kinds of optics are simultaneously coated in a single coating cycle.     

Multi-spectral antireflection coating on zinc sulphide simultaneously effective in visible,eye safe laser wave length and MWIR region

In recent years multi-spectral device is steadily growing popularity. Multi-spectral antireflection coating effective in visible region for sighting system, laser wavelength for ranging and MWIR region for thermal system can use common objective/receiver optics highly useful for state of art thermal instrumentation. In this paper, design and fabrication of antireflection coating simultaneously effective in visible region (450–650 nm), Eye safe laser wave length (1540 nm) and MWIR region (3.6–4.9 μm) has been reported. Comprehensive search method of design was used and the number of layers in the design was optimised with lowest evaluated merit function studied with respect to various layers. Finally eight-layer design stack was established using hafnium oxide as high index layer and silicon-di-oxide as low index coating material combination. The multilayer stack had been fabricated by using electron beam gun evaporation system in Symphony 9 vacuum coating unit. During layer deposition the substrate was irradiated with End-Hall ion gun. The evaporation was carried out in presence of oxygen and layer thicknesses were measured with crystal monitor. The result achieved for the antireflection coating was 85% average transmission from 450 to 650 nm in visible region, 95% transmission at 1540 nm and 96% average transmission from 3.6 to 4.9 μm in MWIR region.     

Marine environment compatible antireflection coating with nanotop layer on silicon optics

Antireflection coating on silicon optics have crucial importance in thermal device working in 3.6–4.9 μm wavelength region. When the thermal device is used in marine environment, the optics face harsh saline weather condition compared to normal field environment. This deteriorates coated optics and to improve mechanical strength of the coating, a nanotop layer on the antireflection coating has been developed. In this paper a study has been carried out to improve marine environment compatibility by employing a nanolayer on the top of antireflection coating on silicon optics. Optimac synthesis method was used to design the multilayer stack on the substrate with germanium and IR-F625 as high/low refractive index respectively and the layer number was restricted to four layers. The top nanolayer was 60 ± 2 nm thick hafnium dioxide layer developed with ion assisted deposition (End–Hall) on the optics during coating process. The deposition of multilayer coating was carried out inside the coating plant fitted with cryo pump and residual gas analyzer. The evaporation was carried out at high vacuum (2–6 × 10⁻⁶ mbar) using electron beam gun and layer thicknesses were measured with crystal monitor. The average transmission achieved was 97% in the spectral band of 3.6–4.9 μm with a hardness of 9.7 GPa on the coated optics.     

Large format voltage tunable dual-band QWIP FPAs

Third generation thermal imagers with dual/multi-band operation capability are the prominent focus of the current research in the field of infrared detection. Dual band quantum-well infrared photodetector (QWIP) focal plane arrays (FPAs) based on various detection and fabrication approaches have been reported. One of these approaches is the three-contact design allowing simultaneous integration of the signals in both bands. However, this approach requires three In bumps on each pixel leading to a complicated fabrication process and lower fill factor.If the spectral response of a two-stack QWIP structure can effectively be shifted between two spectral bands with the applied bias, dual band sensors can be implemented with the conventional FPA fabrication process requiring only one In bump on each pixel making it possible to fabricate large format dual band FPAs at the cost and yield of single band detectors. While some disadvantages of this technique have been discussed in the literature, the detailed assessment of this approach has not been performed at the FPA level yet. We report the characteristics of a large format (640 × 512) voltage tunable dual-band QWIP FPA constructed through series connection of MWIR AlGaAs–InGaAs and LWIR AlGaAs–GaAs multi-quantum well stacks, and provide a detailed assessment of the potential of this approach at both pixel and FPA levels. The dual band FPA having MWIR and LWIR cut-off wavelengths of 5.1 and 8.9 μm provided noise equivalent temperature differences as low as 14 and 31 mK (f/1.5) with switching voltages within the limits applicable by commercial read-out integrated circuits. The results demonstrate the promise of the approach for achieving large format low cost dual band FPAs.     

Absolute line intensities measurements and calculations for the 5.7 and 3.6 μm bands of formaldehyde

The goal of this study is to achieve absolute line intensities for the strong 5.7 and 3.6 μm bands of formaldehyde and to generate, for both spectral regions, an accurate list of line positions and intensities. Both bands are now used for the infrared measurements of this molecule in the atmosphere. However, in the common access spectroscopic databases there exists, up to now, no line parameters for the 5.7 μm region, while, at 3.6 μm, the quality of the line parameters is quite unsatisfactory. High-resolution Fourier transform spectra were recorded for the whole 1600–3200 cm^?1 spectral range and for different path-length-pressure products conditions. Using these spectra, a large set of H₂CO individual line intensities was measured simultaneously in both the 5.7 and 3.6 μm spectral regions. From this set of experimental line strength which involve, at 5.7 μm the ν₂ band and, at 3.6 μm, the ν₁ and ν₅ bands together with nine dark bands, it has been possible to derive a consistent set of line intensity parameters for both the 5.7 and 3.6 μm spectral regions. These parameters were used to generate a line list in both regions. For this task, we used the line positions generated in [Margulés L, Perrin A, Janeckovà R, Bailleux S, Endres CP, Giesen TF, et al. Can J Phys, accepted] and [Perrin A, Valentin A, Daumont L, J Mol Struct 2006;780–782:28–42] for the 5.7 and 3.6 μm, respectively. The calculated band intensities derived for the 5.7 and 3.6 μm bands are in excellent agreement with the values achieved recently by medium resolution band intensity measurements. It has to be mentioned that intensities in the 3.6 μm achieved in this work are on the average about 28% stronger than those quoted in the HITRAN or GEISA databases. Finally, at 3.6 μm the quality of the intensities was significantly improved even on the relative scale, as compared to our previous study performed in 2006.     

QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

1024 × 1024 Format pixel co-located simultaneously readable dual-band QWIP focal plane

This paper reports the first demonstration of the megapixel-simultaneously-readable and pixel-co-registered dual-band quantum well infrared photodetector (QWIP) focal plane array (FPA). The dual-band QWIP device was developed by stacking two multi-quantum-well stacks tuned to absorb two different infrared wavelengths. The full width at half maximum (FWHM) of the mid-wave infrared (MWIR) band extends from 4.4 to 5.1 μm and the FWHM of a long-wave infrared (LWIR) band extends from 7.8 to 8.8 μm. Dual-band QWIP detector arrays were hybridized with custom fabricated direct injection read out integrated circuits (ROICs) using the indium bump hybridization technique. The initial dual-band megapixel QWIP FPAs were cooled to 70 K operating temperature. The preliminary data taken from the first megapixel QWIP FPA has shown system NEΔT of 27 and 40 mK for MWIR and LWIR bands, respectively.     

Bias-selectable mid-/long-wave dual band infrared focal plane array based on Type-II InAs/GaSb superlattice

In this paper, a mid-/long-wave dual-band detector which combined PπMN structure and unipolar barrier was developed based on type-II InAs/GaSb superlattice. A relevant 320 × 256 focal plane array (FPA) was fabricated. Unipolar barrier and PπMN structure in our dual band detector structure were used to suppress cross-talk and dark current, respectively. The two channels, with respective 50% cut-off wavelength at 4.5 μm and 10 μm were obtained. The peak quantum efficiency (QE) of mid wavelength infrared (MWIR) band and long wavelength infrared (LWIR) band are 53% at 3.2 μm under no bias voltage and 40% at 6.4 μm under bias voltage of −170 mV, respectively. And the dark current density under 0 and −170 mV of applied bias are 1.076 × 10⁻⁵ A/cm² and 2.16 × 10⁻⁴ A/cm². The specific detectivity of MWIR band and LWIR band are 2.15 × 10¹² cm·Hz^1/2/W at 3.2 μm and 2.31 × 10¹⁰ cm·Hz^1/2/W at 6.4 μm, respectively, at 77 K. The specific detectivity of LWIR band maintains above 10¹⁰ cm·Hz^1/2/W at the wavelength range from 4.3 μm to 10.2 μm under −170 mV. The cross-talk, selectivity parameter at 3.0 μm, about 0.14 was achieved under bias of −170 mV. Finally, the thermal images were taken by the fabricated FPA at 77 K.     

Design and fabrication of multi-layers infrared antireflection coating consisting of ZnS and Ge on ZnS substrate

We have designed, fabricated and characterized a multi-layers antireflection coating on multispectral ZnS substrate, suitable for the infrared range of 8–12 μm. The 4-layers coating (Ge/ZnS/Ge/ZnS) with optimized thicknesses was fabricated by PVD technique and studied by FTIR, nanoindentation and AFM. From FTIR spectroscopy it was found that, in the wavelength range of 8–12 μm, the average transmittance of the double-side coated sample increases by about 26% and its maximum reaches about 98%. To improve the mechanical hardness, a bilayer of Y₂O₃/carbon was deposited on the coating. Nanoindentation test shows that the coating enhances the mechanical properties. The final coating have successfully passed durability and environmental tests.     

Electrical and optical properties of the GaInAsSb-based heterojunctions for infrared photodiode and thermophotovoltaic cell application

The electrical end optical characteristics of a type II double heterojunction (DH) in the GaSb/GaInAsSb/GaAlAsSb system with staggered band alignment were studied. An analysis of the photodiodes performance through the investigation into electrical and optical characteristics was carried out. The dark current mechanisms in the heterostructures were investigated at several temperatures. The experimental results show that at the low temperature region, the tunneling mechanism of the current flow dominates in both forward and reverse biases. At high temperatures region and in the range of voltage from 0.1 V to 1 V, the reverse current was defined by generation of carriers in the depletion region. Have been estimated the temperature coefficient of the shift of the long-wavelength edge of the spectral sensitivity at half-maximum as Δλ/ΔT = 1.6 nm/K. Quantum efficiency of 0.6–0.7 for the investigated photodiodes was reached without any antireflection coating. For GaSb/GaInAsSb/GaAlAsSb TPV cells, the internal quantum efficiency of 90% was achieved at wavelengths between 1.2 and 1.6 μm.     

Performance of mid-wave T2SL detectors with heterojunction barriers

A heterojunction T2SL barrier detector which effectively blocks majority carrier leakage over the pn-junction was designed and fabricated for the mid-wave infrared (MWIR) atmospheric transmission window. The layers in the barrier region comprised AlSb, GaSb and InAs, and the thicknesses were selected by using k · P-based energy band modeling to achieve maximum valence band offset, while maintaining close to zero conduction band discontinuity in a way similar to the work of Abdollahi Pour et al. [1] The barrier-structure has a 50% cutoff at 4.75 μm and 40% quantum efficiency and shows a dark current density of 6 × 10⁻⁶ A/cm² at −0.05 V bias and 120 K. This is one order of magnitude lower than for comparable T2SL-structures without the barrier. Further improvement of the (non-surface related) bulk dark current can be expected with optimized doping of the absorber and barrier, and by fine tuning of the barrier layer design. We discuss the effect of barrier doping on dark current based on simulations. A T2SL focal plane array with 320 × 256 pixels, 30 μm pitch and 90% fill factor was processed in house using a conventional homojunction p–i–n photodiode architecture and the ISC9705 readout circuit. High-quality imaging up to 110 K was demonstrated with the substrate fully removed.     

Design of an omnidirectional mirror using one dimensional photonic crystal with graded geometric layers thicknesses

We propose a flexible design for one-dimensional photonic crystals (1D-PCs) with a controllable omnidirectional band gap covering the optical telecommunication wavelengths which are 0.85 μm, 1.3 μm and 1.55 μm. We used for this design the chirped grating. Chirping is applied to geometric thicknesses of layers. It takes two forms, one is linear and the other is exponential. We exploit this technique to have the suitable omnidirectional band gap covering the maximum of optical telecommunication wavelengths. With a quarter wave structure, we can have an omnidirectional band gap generating only one of these wavelengths. With graded structure, we obtain, as is reported in this paper, an omnidirectional band gap which covers the wavelengths 1.3 μm and 1.55 μm at the same time with a large bandwidth. We also achieve an omnidirectional band gap containing the wavelength 0.85 μm and which is obviously larger than that of the quarter wave stack.     

Recent progress for HGCDTE quantum detection in France

Due to its tuneable narrow band gap, HgCdTe (MCT) is a material of choice for high complexity IR focal plane arrays (FPAs). Being a strategic defence technology, MCT detector developments is totally mastered at every stage of fabrication at LETI and Sofradir, from the lattice matched CZT substrate growth, the active layer MCT growth, to PV technology, silicon ROIC design and flip chip hybridization. Within the last few years, MCT devices have considerably evolved in terms of device complexity, performances, and field of action. n/p standard technology has been developed in all spectral ranges, from VLWIR (20 μm) down SWIR (1.7 μm). MCT photodiode sensibility goes even lower, down to visible and even UV with a constant quantum efficiency. Moreover, MCT material provides us with high and noiseless avalanche gains inside the photodiode itself, which we are now fully able to use for the optimization of FPA performances. Besides, p/n diode structure is a new emerging process which improves detector performances by several orders of magnitude in terms of dark current, by comparison with the n/p historical structure. This technology has been successfully demonstrated from VLWIR (15 μm cut off) down to the SWIR range (2 μm cut off) where ultra low dark currents are recorded at low temperatures (0.4 e/s). In the same time, first dual band FPAs are delivered, which are expected to be the 3rd generation of IR detectors. At last, considerable efforts are made in order to increase the operational temperature, going from 100 K to 150 K for MWIR FPAs at constant performances, optimizing all technological steps, especially growth issues. Going at even higher operating temperatures (HOTs) is also under active study.     

High energy femtosecond OPA pumped by 1030 nm Yb:KGW laser.

We present a traveling-wave-type optical parametric amplifier (OPA) pumped at 1.03 μm by a Yb:KGW laser that produces tunable high-energy pulses of 6.5–4 μJ in the mid-infrared (mid-IR) region from 3.6 to 7 μm. Pumping with negatively chirped pulses generates nearly transform-limited (TL) mid-IR pulses of 300–330 fs length. Pumping with TL pulses of 200 fs not only decreases the output energy by a factor of 1.5, but also decreases the mid-IR pulse-length to 160 fs after additional compression. The compact and simple OPA setup is ideal for femtosecond infrared experiments in the fingerprint region.     

InAs/GaSb superlattices for advanced infrared focal plane arrays

We report on the development of high performance focal plane arrays for the mid-wavelength infrared spectral range from 3–5 μm (MWIR) on the basis of InAs/GaSb superlattice photodiodes. An investigation on the minority electron diffusion length with a set of six sample ranging from 190 to 1000 superlattice periods confirms that InAs/GaSb superlattice focal plane arrays achieve very high external quantum efficiency. This enabled the fabrication of a range of monospectral MWIR imagers with high spatial and excellent thermal resolution at short integration times. Furthermore, novel dual-color imagers have been developed, which offer advanced functionality due to a simultaneous, pixel-registered detection of two separate spectral channels in the MWIR.     

Demonstration of large format mid-wavelength infrared focal plane arrays based on superlattice and BIRD detector structures

We have demonstrated the use of bulk antimonide based materials and type-II antimonide based superlattices in the development of large area mid-wavelength infrared (MWIR) focal plane arrays (FPAs). Barrier infrared photodetectors (BIRDs) and superlattice-based infrared photodetectors are expected to outperform traditional III–V MWIR and LWIR imaging technologies and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow InAs/GaSb superlattice pin photodiodes and bulk InAsSb structures on GaSb substrates. The coupled quantum well superlattice device offers additional control in wavelength tuning via quantum well sizes and interface composition, while the BIRD structure allows for device fabrication without additional passivation. As a demonstration of the large area imaging capabilities of this technology, we have fabricated mid-wavelength 1024 × 1024 pixels superlattice imaging FPAs and 640 × 512 MWIR arrays based on the BIRD concept. These initial FPA have produced excellent infrared imagery.     

QWIP Status at THALES

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III–V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory).In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III–V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multi-spectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (<5 μm) and VLWIR (>15 μm) arrays.As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our 320 × 256 SWIR module with InGaAs photodiodes.     

Influence of the antireflection,window, and active layers on optical properties of exponential-doping transmission-mode GaAs photocathode modules

In order to well study the influence of the thickness and doping concentration on optical properties of transmission-mode GaAs photocathode, three exponential-doping and one uniform-doping photocathode modules were prepared by molecular beam epitaxy with a structure of glass/Si₃N₄/Ga_1 ? xAl_xAs/GaAs. By use of the spectrophotometer, the optical properties were separately measured including the reflectivity and transmissivity curves. Based on thin film optical principles, the optical properties and their integral values are calculated by matrix formula for the four-layer photocathode module. The result shows that the antireflection and window layers affect the peak and valley of the optical property curves and the active layer influences the absorptivity values of the transmission-mode cathode modules. The photocathode module has high absorptivity within the response waveband when the optimal module has the Si₃N₄ antireflection layer of 0.1 μm, the Ga_1 ? xAl_xAs window layer of more than 0.4 μm, and the GaAs active layer of 1.5 μm–2 μm and low average doping concentration.     

Single-mode fiber design proposal using evolutionary technique with ultra low bending-loss appropriate in FTTH application

A proposal for the new single mode optical fiber containing four cladding layer with ultra low bending loss is presented. The suggested design method is based on the Genetic Algorithm optimization technique. Compared to the work reported in [1], our designed structure exhibits very small bending loss over the wide communication band (1.3–1.65 μm). Simulation results show bending loss of 6.78e?14 dB/turn at 1.55 μm for single turn of 5 mm radius. The best value reported in [1] was 2e?3 dB/turn for the same wavelength and radius of curvature.     

Device-level vacuum packaged uncooled microbolometer on a polyimide substrate

Uncooled infrared detectors (IR) on a polyimide substrate have been demonstrated where amorphous silicon (a-Si) was used as the thermometer material. New concepts in uncooled microbolometers were implemented during the design and fabrication, such as the integration of a germanium long-pass optical filter with the device-level vacuum package and a double layer absorber structure. Polyimide was used for this preliminary work towards vacuum-packaged flexible microbolometers. The detectors were fabricated utilizing a carrier wafer and low adhesion strength release layer to hold the flexible polyimide substrate during fabrication in order to increase the release yield. The IR detectors showed a maximum detectivity of 4.54 × 10⁶ cm Hz^1/2/W at a 4 Hz chopper frequency and a minimum noise equivalent power (NEP) of 7.72 × 10⁻¹⁰ W/Hz^1/2 at a biasing power of 5.71 pW measured over the infrared wavelength range of 8–14 μm for a 35 μm × 35 μm detector. These values are comparable to other flexible microbolometers with device-level vacuum packaging which are found in literature.