拉曼光谱研究n型4H-和6H-SiC晶体的载流子浓度

半导体材料的纵光学声子与等离子体激元耦合模(LOPC模)能够提供材料电学方面的相关信息。本文在室温下测得了n型4H-和6H-SiC的拉曼光谱,分析了掺入的杂质对于SiC晶体拉曼光谱的影响,通过拟合n型4H-和6H-SiC晶体的LOPC模的线型得到等离子体频率,并由此从理论上计算了载流子浓度。载流子浓度的理论计算值与霍尔测量的结果符合得很好。研究结果进一步证实了对于n型4H-和6H-SiC晶体,可以通过分析LOPC模的线形来较准确地给出相关材料的载流子浓度。     

4H-SiC MOSFET的温度特性研究

对4HSiCMOSFET的器件结构和温度特性进行了研究,总结了器件的结构参数对特性的影响,比较了不同温度下的输出特性以及饱和漏电流、阈值电压、跨导、导通电阻与温度的变化关系,模拟结果表明4HSiCMOSFET具有优异的温度特性,在800K下可以正常工作 关键词： 4H-SiC MOSFET     

Kr离子注入SiC的拉曼光谱研究

应用拉曼光谱研究了5 MeV Kr离子（注量分别为5×1013,2×1014,1×1015 ions/cm2）室温注入6H SiC单晶及其高温退火处理后结构的变化。 研究表明, 注入样品的拉曼光谱中不仅出现了Si—C振动的散射峰, 还产生了同核Si—Si键和C—C键散射峰。 Si—C散射峰强度随退火温度升高而增强, 当退火温度高达1000 ℃时, 已接近未辐照SiC的散射峰强度。晶体Si—Si键散射峰强度随退火温度变化不大, 而非晶Si—Si键散射峰强度随退火温度的增加逐渐消失。相对拉曼强度（Relative Raman Intensity, 简称RRI）随注量的增加逐渐减小并趋于饱和, 且不同退火温度样品的饱和注量不相同; RRI随退火温度的增加逐渐升高, 这在低注量样品中表现得尤为明显。 低、中、高3种注量样品的RRI随退火温度的增加从重合逐渐分离, 并且退火温度越高, 分离越大。 Raman spectroscopy was used to study the structure changes of 6H SiC single crystal implanted with 5 MeV Kr (Krypton) at room temperature and subsequently annealed at high temperature. The Raman spectrum of the implanted SiC displays not only Si—C bonds vibration peaks, but also homonuclear Si—Si and C—C bond vibration peaks. Si—C bond vibration peaks gradually strengthen with increasing temperature. When annealing at 1000 ℃, the peak intensity of Raman spectrum is close to that of virgin specimen. It is found that crystal Si—Si bond vibration peaks do not change when annealing, but amorphous Si—Si bond vibration peaks disappear with increasing annealing temperature. The Relative Raman Intensity (RRI) values decrease with increasing fluence and tend to saturate, but the saturation fluences is different for various anneal temperature. The RRI values increases with raising annealing temperature, which is more obvious in low implanted specimens. At the same time, the RRI values separate gradually with increasing temperature and this phenomenon is strengthened by annealing temperature.     

N型4H-SiC同质外延生长

利用水平式低压热壁CVD (LP-HW-CVD) 生长系统,台阶控制生长和衬底旋转等优化技术,在偏晶向的4H-SiC Si(0001) 晶面衬底上进行4H-SiC同质外延生长,生长温度和压力分别为1550℃和10⁴ Pa,用高纯N₂作为n型掺杂剂的4H-SiC原位掺杂技术,生长速率控制在5μm/h左右.采用扫描电镜(SEM)、原子力显微镜(AFM),傅里叶变换红外光谱(FTIR)和Hg/4H-SiC肖特基结构对同质外延表面形貌、厚度、掺杂浓度以及均匀性进行了测试.实验结果表明,4H-SiC同质外延在表面无明显缺陷,厚度均匀性1.74%, 1.99% 和1.32%(σ/mean),掺杂浓度均匀性为3.37%,2.39%和2.01%.同种工艺条件下,样品间的厚度和掺杂浓度误差为1.54%和3.63%,有很好的工艺可靠性. 关键词： 4H-SiC 同质外延生长 水平热壁CVD 均匀性     

CCl4的激光拉曼光谱研究

研究了4条CCl4斯托克斯激光拉曼光谱,通过对CCl4分子结构及振动模式对称性的分析,设计了一套测量拉曼光谱退偏度的实验方案,将实验结果和理论值进行了比较.     

n型6H-SiC拉曼散射光谱的温度特性（英文）

三片具有不同载流子浓度的n型6H-SiC体材料用于83K到673K的变温拉曼散射研究,能够得到变温的拉曼散射模。通过测量可以得到,随着温度的增长,不同的声子散射模的拉曼峰逐渐变小。运用声子频率的温度特性计算公式,对三片样品的三个声子模的峰位进行拟合能够得到很好的拟合结果。6H-SiC样品的纵光学声子模(LOPC)的拉曼位移像其他的拉曼模一样,随着温度的增加而变小。在较高的温度时所有的声子模明显展宽。     

Nd:LuVO_4晶体的拉曼光谱研究

采用不同的几何配置测量了Nd:LuVO4晶体的室温拉曼光谱,根据群论对称性分类计算了该晶体的红外和拉曼活性振动模并与实验结果做了比较,指认了测定的特征谱线。测量并分析了Nd:LuVO4晶体A1g全对称类的高温拉曼光谱,讨论了拉曼频移随温度变化的关系,认为晶体的热膨胀是引起拉曼频移变化的主要原因。     

液晶的付立叶变换拉曼光谱

测量了液晶的富立叶变换拉曼光谱，对所有拉曼模进行了指认。发现其相变序和侧向烷基链有关。讨论了铁电近晶Ｃ相形成的机制。     

He离子辐照6H-SiC引入缺陷的光谱研究

实验采用300 keV的He²⁺辐照6H-SiC,辐照温度分别为室温,450,600和750 ℃,辐照剂量范围为1×10¹⁵–1×10¹⁷ cm^-2,辐照完成后对样品进行拉曼散射和紫外可见透射光谱测试与研究. 这两种分析方法的实验结果表明,He离子辐照产生的缺陷以及缺陷的恢复与辐照剂量和辐照温度有着直接关系. 室温下辐照会使晶体出现非晶化,体现在拉曼特征峰消失,相对拉曼强度达到饱和(同时出现了较强的Si-Si峰);高温下辐照伴随着晶体缺陷的恢复过程,当氦泡未存在时,高温辐照很容易导致Frenkel对、缺陷团簇等缺陷恢复,当氦泡存在时,氦泡会抑制缺陷恢复,体现在相对拉曼强度和相对吸收系数曲线斜率的变化趋势上. 本文重点讨论了高温辐照情况下氦泡对缺陷聚集与恢复的影响,并与高温下硅离子辐照碳化硅结果进行了对比. 关键词： 6H-SiC 氦泡 拉曼散射光谱 紫外可见透射光谱     

近场拉曼光谱技术的发展

将近场光学技术与拉曼光谱相结合,发展出近场拉曼光谱术。综述了近场拉曼光谱探测技术的发展现状,讨论了近场拉曼光谱术的优点和纳米局域光谱分析能力。对两种常用的探测方法(常规近场光谱探测方法和近场增强拉曼光谱探测方法)进行了比较,并介绍了近场拉曼光谱技术在生物、化学、纳米材料等领域的一些应用。     

Determination of the transport properties in 4H-SiC wafers by Raman scattering measurement

The free carrier density and mobility in n-type 4H-SiC substrates and epilayers were determined by accurately analysing the frequency shift and the full-shape of the longitudinal optic phonon--plasmon coupled (LOPC) modes, and compared with those determined by Hall-effect measurement and that provided by the vendors. The transport properties of thick and thin 4H-SiC epilayers grown in both vertical and horizontal reactors were also studied. The free carrier density ranges between 2×10¹⁸ cm^-3 and 8×10¹⁸ cm^-3 with a carrier mobility of 30--55 cm²/(V·s) for n-type 4H-SiC substrates and 1×10¹⁶--3×10¹⁶ cm^-3 with mobility of 290--490 cm²/(V·s) for both thick and thin 4H-SiC epilayers grown in a horizontal reactor, while thick 4H-SiC epilayers grown in vertical reactor have a slightly higher carrier concentration of around 8.1×10¹⁶ cm^-3 with mobility of 380 cm²/(V·s). It was shown that Raman spectroscopy is a potential technique for determining the transport properties of 4H-SiC wafers with the advantage of being able to probe very small volumes and also being non-destructive. This is especially useful for future mass production of 4H-SiC epi-wafers.     

6H-SiC的A_1(LO)拉曼峰低温温度特性研究

对6H-SiC单品体材料进行了从80到320 K的低温变温拉曼光谱测量,从实验得到的谱图上指认了部分6H-SiC的折叠拉曼峰,重点利用三声子模型和四声子模型分析了A1(LO)光学声子模峰位和线宽在低温下随温度的变化特性.实验发现,随着温度降低,LO声子模谱峰中心向高波数移动,线宽减小;同时发现当温度低于160 K时,无论足谱峰中心位置还是线宽的变化都趋于平缓,这是在常温和高温下观察不到的,说明在160 K以下时A1(LO)谱线线宽是由声子本身的性质决定,温度对线宽的影响几乎可忽略;理论拟合表明,四声子模型更能与实验数据相符,三次、四次非谐振动共同作用,前者是主要过程;温度越低,A1(LO)光学声子寿命越长,这是由于原子热运动的剧烈程度随温度降低而下降,声子弛豫减弱.     

One phonon resonant Raman scattering in a quantized spherical film

We have presented a theoretical calculation of the differential cross section (DCS) for the electron Raman scattering (ERS) process associated with surface optical (SO) phonon modes in a semiconductor quantized spherical film. We consider the Fröhlich electron–phonon interaction in the framework of the dielectric continuum approach. We study the selection rules for the processes. Singularities are found to be size-dependent and by varying the size of the QDs, it is possible to control the frequency shift in the Raman spectrum. A discussion of the phonon behavior for the films with large and small size is presented. The numerical results are also compared with that of experiments.     

Nitridation of the SiO2/4H-SiC interface studied by surface-enhanced Raman spectroscopy

We employ surface-enhanced Raman spectroscopy (SERS) to investigate the effect of nitridation on interfacial carbon at the SiO₂/4H-SiC interface. These results demonstrate that the interfacial carbon clusters are strongly modified by post-nitridation process and the nitrogen take-up correlates with the reduction in the interface state density.     

双外延基区4H-SiC BJTs的建模与仿真

基于4H-SiC的材料特性,对具有双外延基区结构的4H-SiC双极晶体管进行研究.通过分析该结构在基区内部形成的自建电场以及基区渡越时间,利用正交试验的方法,基于各种器件二维模型,对该器件结构进行数值计算,并进行平均极差分析.计算结果表明,该器件的共发射结电流增益最高可达72,具有负温度系数,并且在一个很宽的集电极电流范围内该特性保持不变.     

XRD法计算4H-SiC外延单晶中的位错密度

对用X射线衍射法计算4H-SiC外延中的位错密度方法进行了理论和实验研究。材料中的位错密度大于106 cm-2会给材料位错密度的测试会带来一定的困难。首先从理论上分析了位错密度对X射线衍射结果的影响,得出位错密度和峰宽FWHM展宽的关系。然后对4H-SiC样品进行了X射线三轴晶ω-2θ测试,采用不同晶面衍射峰,计算出样品的位错密度。分析了外延中位错产生的原因,并提出了相应的解决办法。     

4H-SiC材料在紫外波段吸收系数的分析研究

基于已报道的4H-SiC材料在紫外波段(325—390nm)吸收系数的测定,结合经验公式,采用外推和多项式拟合方法分析4H-SiC材料在200—400nm紫外波段的吸收系数,并得到4H-SiC材料的吸收系数与波长的关系式。对4H-SiC吸收系数的分析研究将作为4H-SiC光电探测器结构设计的一个重要依据。     

ZnO晶体的偏振拉曼散射的深入研究

利用拉曼选择定则,设计了ZnO单晶的直角偏振几何配置。在室温下测量了ZnO单晶的各种振动模式的偏振拉曼散射光谱。与原先的文献相比较,初步讨论了各种振动模式的线宽和强度的变化原因。除ZnO晶体中包括非极性和极性拉曼基频振动,准横光学和准纵光学模式和振动属性被指认外,它们的高阶拉曼散射模式首先被确定。本研究结果为深入了解ZnO晶体和薄膜的宏观性质和微观结构提供了依据。     

Ultraviolet Raman scattering in ZnO nanowires: quasimode mixing and temperature effects

We use near‐resonance Raman scattering to investigate zinc oxide (ZnO) nanowires grown by chemical vapor deposition on Si substrates. We discuss the role of quasimode mixing on the wavenumber of the longitudinal optical (LO) bands, and we perform Raman measurements with different excitation powers to investigate possible laser heating effects. We find that in the Raman spectra of as‐deposited nanowires grown along the c‐axis of wurtzite, the LO bands are located slightly below the E₁(LO) mode of bulk ZnO. We perform a calculation of the expected LO wavenumber in an ensemble of randomly oriented nanowires. Our analysis shows that light refraction, together with the orientation‐dependent cross‐section of the nanowires for the incoming light, counterbalances quasimode mixing effects in the as‐grown product, giving rise to LO bands that are barely redshifted relative to the E₁(LO) mode. In the case of ZnO nanowires that have been mechanically removed (scratched) and subsequently deposited onto separate Si substrates, we observe clear laser‐induced heating. Temperature effects account well for the Raman wavenumber shifts displayed by the LO bands in the Raman spectra of the scratched nanowires. Copyright © 2010 John Wiley & Sons, Ltd.