Determination of depth profiling of metal trace impurities on Si surface using total reflection X-ray fluorescence

Summary Total reflection X-ray fluorescence (TXRF) is used for non-destructive determination of depth profiling. A numerical processing is presented as impurity quantification in the continuum excitation TXRF without using standards. Dependences of concentration of impurities on depths ranging from a few tens to thousands Angströms are given for Fe and Cu on Si-wafer. The detection limits are in the range of 10¹⁰ atoms/cm². The method was checked with Secondary Ion Mass Spectrometry (SIMS) and the agreement is reasonably good.     

Multielement analysis of standard reference materials with total reflection X-ray fluorescence (TXRF)

Summary X-Ray fluorescence analysis with total-reflected exciting beam (TRXF) represents a comparatively new development among the multielement methods. The main application of this method is the analysis of liquid samples. Furthermore, the measurements of suspensions and dust samples are practicable. With regard to sample preparation, execution and results information in various applications is at present available. This report gives a survey of advantages and restrictions of TXRF in soil science. After the digestion of various reference materials in two different ways, measurements were performed by TXRF. The elements Ca, Ti, Cr, Mn, Fe, Ni, Cu, Zn, Rb, Sr, Ba and Pb were taken into consideration.

---

Multielement-Analyse von Standard-Referenzmaterialien mit der Totalreflexions-Röntgenfluorescenz (TRFA)

     

Quantitative determination of cadmium in polyethylene using total reflection X-ray fluorescence (TXRF) spectroscopy

A new application of total reflection X-ray fluorescence (TXRF) spectroscopy was tested for its use in the quantitative determination of element mass fractions (Z ≥ 12) in solid polyethylene samples. The experiments were conducted with four polyethylene reference materials from the Institute for Reference Materials and Measurements (IRMM) with cadmium mass fractions in the range from 40 to 400 mg/kg (VDA 001–004). Samples from each reference material were transferred as thin films straight onto quartz glass discs commonly used for TXRF analysis. Precision, accuracy and capability of the method are discussed on the basis of the current results and recent experiences with real samples. The method appears to be suitable for tasks in forensic science and polymer analysis.     

Analysis of nutrition-relevant trace elements in human blood and serum by means of total reflection X-ray fluorescence (TXRF) spectroscopy

In clinical service laboratories, one of the most common analytical tasks with regard to inorganic traces is the determination of the nutrition-relevant elements Fe, Cu, Zn, and Se.     

Analysis of low Z elements in various environmental samples with total reflection X-ray fluorescence (TXRF) spectrometry

Recently there is a growing interest in low Z elements such as carbon, oxygen up to sulphur and phosphorus in biological specimen. Total reflection X-ray fluorescence (TXRF) spectrometry is a suitable technique demanding only very small amounts of sample. On the other side, the detection of low Z elements is a critical point of this analytical technique. Besides other effects, self absorption may occur in the samples, because of the low energy of the fluorescence radiation. The calibration curves might be not linear any longer. To investigate this issue water samples and samples from human cerebrospinal fluid were used to examine absorption effects. The linearity of calibration curves in dependence of sample mass was investigated to verify the validity of the thin film approximation. The special requirements to the experimental setup for low Z energy dispersive fluorescence analysis were met by using the Atominstitute's TXRF vacuum chamber. This spectrometer is equipped with a Cr-anode X-ray tube, a multilayer monochromator and a SiLi detector with 30 mm² active area and with an ultrathin entrance window. Other object on this study are biofilms, living on all subaqueous surfaces, consisting of bacteria, algae and fungi embedded in their extracellular polymeric substances (EPS). Many trace elements from the water are bound in the biofilm. Thus, the biofilm is a useful indicator for polluting elements. For biomonitoring purposes not only the polluting elements but also the formation and growth rate of the biofilm are important. Biofilms were directly grown on TXRF reflectors. Their major elements and C-masses correlated to the cultivation time were investigated. These measured masses were related to the area seen by the detector, which was experimentally determined. Homogeneity of the biofilms was checked by measuring various sample positions on the reflectors.     

Determination of trace elements in planktonic microcrustaceans using total reflection X-ray fluorescence (TXRF): First results from two Chilean lakes

First results are described from the application of a recently developed dry method for determination of elements in single specimens of freshwater microcrustaceans, using total reflection X-ray fluorescence spectrometry (TXRF). This method is a powerful, non-destructive technique for quantifying the trace element content of minute biological samples with a dry weight of 3–50 g. Three different freshwater microcrustaceans were sampled, from the natural, uncontaminated Lake Laja and from the artificial Rapel reservoir which is slightly contaminated by drainage water from a copper mine. Single specimens of Daphnia pulex, Bosmina chilensis, and Ceriodaphnia dubia were prepared using a modification of the dry method and measured by TXRF. The results showed that both As, Mn, Fe, Ni, Zn, and Cu content and the bioaccumulation of these metals were usually significantly different between the microcrustaceans from the two lakes. The largest difference was found for Cu which was eight times more concentrated in the two microcrustaceans from Rapel reservoir than it was in D. pulex from Lake Laja.     

Si drift detector in comparison to Si(Li) detector for total reflection X-ray fluorescence analysis applications

TXRF is routinely used and suited to inspect Si wafer surfaces for possible impurities of metallic elements at the level of pg and below. Lightweight, compact sized, high-resolution Silicon drift detectors (FWHM=148 eV at 5.9 keV) electically cooled and with high throughput are ideally as the new spectrometer and for clean room application. A KETEK 5 mm² Si drift detector was compared with a NORAN 80 mm² SiLi in a previously commercially available ATOMIKA 8010 wafer analyzer. Results are presented and show that almost the same detection limits for both detector types were achieved analyzing a droplet sample containing 1 ng Ni on a Si wafer. Also, the performance to detect low Z elements like Na, excited with monochromatic Cr K radiation in a vacuum chamber was tested and detection limits of 600 pg obtained.     

Multielement analysis of a municipal landfill leachate with total reflection X-ray fluorescence (TXRF). A comparison with ICP-OES analytical results

A complete analysis of a landfill leachate coming from a landfill site of several years old was performed with a total reflection X-ray fluorescence (TXRF) spectrometer in comparison with an inductively coupled plasma optical emission spectroscopy (ICP-OES). The results of the two analytical techniques are compared and advantages and drawbacks emphasized. The TXRF analytical technique appears a reliable, economic, rapid and simpler technique for the everyday monitoring of the composition of the landfill leachate before the purification treatment and after the treatment to check the quality of the resulting purified water. The TXRF and the ICP-OES analytical techniques were also employed in the analysis of three groundwater samples.     

Determination of trace elements in small water samples by total reflexion X-ray fluorescence (TXRF) and by neutron activation analysis (NAA)

The problems encountered in the determination of trace elements in small sample volumes of the order of 1 to 10 l (e.g. in droplets of water) are discussed. Total reflexion X-ray fluorescence (TXRF) and neutron activation analysis (NAA) are applied for the determination of Na, Mg, K, Ca, Mn, Fe, Co, and Cu in concentrations of 0.01 to 10 mg/L in 1 to 10 L of water. The applied methods are described, the results are discussed and the advantages of TXRF are brought forward.     

Determination of trace elements in macrozoobenthos samples by total reflection X-ray fluorescence analysis

The paper describes the analysis of a set of metals in macrozoobenthos samples from a river in Western Austria by using total reflection X-ray fluorescence analysis (TXRF). Metal concentrations in aquatic insect larvae from an industrially contaminated site are significantly higher than in larvae from a reference site. Furthermore, species-specific differences in metal accumulation were found. TXRF allows multi-element analysis of very low metal concentrations in very small sample masses (e.g. single aquatic insect larvae with a dry weight of only a few milligrams). Due to its multi-element capability and high sensitivity total reflection X-ray fluorescence analysis is a valuable tool for biomonitoring studies of metal contamination in aquatic ecosystems.     

Applications of total reflection X-ray fluorescence spectrometry in trace element and surface analysis

Total reflection X-ray fluorescence spectrometry (TXRF) is presented as a genuine surface analytical technique. Its low information depth is shown to be the characteristic feature differentiating it from other energy dispersive X-ray fluorescence methods used for layer and surface analysis. The surface sensitivity of TXRF and its analytical capability together with the limitations of the technique are discussed here using typical applications including the contamination control of silicon wafers, thin layer analysis and trace element determination. For buried interfaces and implantation depth profiles in silicon a combination of TXRF and other techniques has been applied successfully. The TXRF method has the particular advantage of being calibrated without the need for standards. This feature is demonstrated for the example of the element arsenic.     

Detection limit calculations for the total reflection techniques of X-ray fluorescence analysis

In this work, theoretical calculations of detection limits for different total reflection techniques of X-ray fluorescence analysis are presented. Calculations include grazing incidence (TXRF) and gracing emission (GEXRF) conditions. These calculations are compared with detection limits calculated for conventional X-ray fluorescence (XRF). In order to compute detection limits, Shiraiwa and Fujino's model was used to calculate X-ray fluorescence intensities. This model makes certain assumptions and approximations to achieve the calculations, especially in the case of the geometrical conditions of the sample, and the incident and takeoff beams. Nevertheless, the calculated data of detection limits for conventional XRF and total-reflection XRF show a good agreement with previous results. The model proposed here allows us to analyze the different sources of background and the influence of the excitation geometry, which contribute to a better understanding of the physical processes involved in the XRF analysis by total reflection. Finally, a comparison between detection limits in total-reflection analysis at grazing incidence and at grazing emission is carried out. Here, a good agreement with the theoretical predictions of the Reciprocity Theorem is found, showing that, in theory, detection limits are similar for both techniques.     

Sweeping total reflection X-ray fluorescence optimisation to monitor the metallic contamination into IC manufacturing

Among the methods available on the market today to control as metallic contamination in integrated circuit manufacturing, Sweeping Total reflection X-ray Fluorescence mode appears a very good method, providing fast and entire wafer mapping. With the goal of a pertinent use of Sweeping Total reflection X-ray Fluorescence in advanced Integrated Circuit manufacturing this work discusses how acceptable levels of contamination specified by the production (low levels to be detected) can be taken into account.     

Trends in total reflection X-ray fluorescence spectrometry for metallic contamination control in semiconductor nanotechnology

The development of transistor manufacturing into the nanoscale regime is accompanied by a continuous awareness concern for contamination control. The ever-increasing demands for analysis sensitivity (in the sub-10⁹ at/cm² regime) combined with the introduction of new materials (i.e. non-silicon based) put severe challenges on the application of analytical techniques for atomic level contamination monitoring. Since many years, total reflection X-ray fluorescence spectrometry (TXRF) has developed as a preferred technique, ideally suitable due to the excellent reflectivity and flatness of the starting Si substrates. Driven by performance enhancement requirements, many new materials are being introduced at the substrate level (Ge, III/V compounds for higher mobility), gate stack (alternative dielectric materials and gate electrodes for capacitance scaling) and interconnect level (low-k and copper for faster switching). This paper reviews some recent developments in the state-of-the-art TXRF developments for semiconductor applications. Among the focus areas are the expansion of the elemental range (through multi-excitation line selection or multi-excitation source to excite low Z as well as high Z elements in one analysis sweep) and dynamic range (by pre-concentration techniques, synchrotron radiation analysis and detector developments). Further, emphasis is also focused towards quantification issues—whereby the three methodologies (micro-droplet, film and bulk type standards) are critically reviewed. Also, a recent development of sweeping TXRF, suitable for fast screening of large surface areas is being discussed. The applications of TXRF in a semiconductor environment are being reviewed. Finally, the performance of TXRF for the various semiconductor applications is assessed with respected to competitive techniques.     

Analysis of low Z elements on Si wafer surfaces with undulator radiation induced total reflection X-ray fluorescence at the PTB beamline at BESSY II

Synchrotron radiation induced TXRF allows the nondestructive investigation of low Z contaminations on Si wafer surfaces at trace levels required by the semiconductor industry. The PTB (Physikalisch Technische Bundesanstalt) U180 undulator beamline at BESSY II, equipped with a plane grating monochromator ensuring an energy resolving power E/ΔE between 500 and 5000, can be operated either in wiggler mode for photon energies up to 1.7 keV to excite Al, Mg and Na efficiently, or in undulator mode, i.e. using one of the first odd U180 harmonics, to obtain intensive low energy radiation below 0.7 keV to excite carbon, nitrogen and oxygen. The specific feature of the beamline is its high spectral purity that allows for fundamental investigations. The TXRF wafer chamber of the Atominstitut was used for the experiments with a sidelooking Si(Li) detector with the wafer arranged vertically to take advantage of the linear polarization for background reduction. The energy dependence of the resonant Raman scattering, which is a limiter for the determination of Al at ultra trace levels excited with energies just below the Si absorption edge was studied as well as the influence of the incidence angle on the Raman peak. Droplet samples containing boron were measured and the detection limit of 3 ng determined. A single Carbon layer (5 nm) and a C–Ni–C multilayer sample on a Si wafer were characterized and it was shown that the thickness and density of these layers could be determined.     

Determination of technetium by total reflection X-ray fluorescence

The measurement of technetium in inorganic solutions is reported for the first time using total reflection X-ray fluorescence (TXRF). Sodium pertechnetate solutions eluted from decayed ⁹⁹Mo generators were efficiently excited with a silver-anode X-ray tube in a standard configuration. The technique has been developed to aid establishing the extent of stoichiometric relations between Tc and a ligand in organo-metallic compounds synthesized with diagnostic purposes for nuclear medicine. The precision attained was 5% and the detection limit achieved for Tc in inorganic solutions by TXRF at 1000 s was 0.039 μg/ml.