Band gap tuning in nanocomposite ZrO2–SnO2 thin film achieved through sol–gel co-deposition method

Transparent SnO₂, nanocomposite ZrO₂–SnO₂ and ZrO₂ thin films were prepared by sol–gel dip-coating technique. X-ray diffraction (XRD) spectra showed a mixture of three phases: tetragonal ZrO₂ and SnO₂ and orthorhombic ZrSnO₄. X-ray photoelectron spectroscopy (XPS) gave Zr 3d, Sn 3d and O 1s spectra of the nanocomposite ZrO₂–SnO₂ thin film which revealed the presence of oxygen vacancies in the nanocomposite ZrO₂–SnO₂ thin film. Scanning electron microscopy (SEM) observations showed that microstructure of the nanocomposite ZrO₂–SnO₂ thin film consists of uniform dispersion of isolated SnO₂ particles in ZrO₂ matrix. The band gap for the ZrO₂ was estimated to be 5.51 eV and that for the nanocomposite ZrO₂–SnO₂ film was 4.9 eV. These films demonstrated the tailoring of band gap values which can be directly employed in tuning the band gap by simply changing the relative concentration of zirconium and tin elements. Photoluminescence (PL) spectra revealed an intense emission peak at 424 nm in the nanocomposite ZrO₂–SnO₂ film which indicate the presence of oxygen vacancies in ZrSnO₄.     

Electrochemical characterization of praseodymium centers in Pr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zr<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O<Subscript>2</Subscript> zirconias using electrocatalysis and photoelectrocatalysis

The voltammetry of nanoparticles and scanning electrochemical microscopy are applied to characterize praseodymium centers in tetragonal and monoclinic zirconias, doped with praseodymium ions (Pr _x Zr_1−x O₂), prepared via sol–gel routes. Doped zirconia nanoparticles were synthesized by a sol–gel liquid-phase route and characterized by different techniques, including X-ray diffraction powder pattern, ultraviolet–visible diffuse reflectance spectroscopy, infrared spectroscopy, and transmission electron microscopy (TEM). Gels annealed at around 400 °C yielded tetragonal Pr _x Zr_1−x O₂ phases. The monoclinic forms of Pr-doped ZrO₂ were obtained by annealing at temperatures higher than 1,100 °C. TEM micrographs proved that the size of the nanoparticles produced was dependent on their crystalline form, around 15 and 60 nm for tetragonal and monoclinic, respectively. The electrochemical study confirmed that a relatively high content of praseodymium cation was in the chemical state (IV), i.e., as Pr⁴⁺, in both zirconia host lattices. The catalytic and photocatalytic effects of Pr⁴⁺ centers located in the monoclinic zirconia lattice on nitrite reduction and oxygen evolution reaction were studied.     

Microstructure and optical properties of Ag-doped ZrO2 thin films prepared by sol gel method

Ag doped ZrO₂ thin films were deposited on quartz substrates by sol–gel dip coating technique. The effect of Ag doping on tetragonal to monoclinic phase transformation of ZrO₂ at a lower temperature (500 °C) was investigated by X-ray diffraction. It is found that the Ag doping promotes the phase transformation. The phase transformation can be attributed to the increase in the tetragonal grain size and concentration of oxygen vacancies in the presence of the Ag dopant. Accumulation of the Ag atoms at the film surface and surface morphology changes in the films were observed by AFM as a function of varying Ag concentration. X-ray photoelectron spectroscopy gave Ag 3d and O 1s spectra on Ag doped thin film. The chemical states of Ag have been identified as the monovalent state of Ag⁺ ions in ZrO₂. The Ag doped ZrO₂ thin films demonstrated the tailoring of band gap values. It is also found that the intensity of room temperature photoluminescence spectra is suppressed with Ag doping.     

Formation and dielectric properties of anodic oxide films on Zr–Al alloys

Zr–Al alloys containing up to 26 at.% aluminum, prepared by magnetron sputtering, have been anodized in 0.1 mol dm⁻³ ammonium pentaborate electrolyte, and the structure and dielectric properties of the resultant anodic oxide films have been examined by grazing incidence X-ray diffraction, transmission electron microscopy, Rutherford backscattering spectroscopy, and AC impedance spectroscopy. The anodic oxide film formed on zirconium consists of monoclinic and tetragonal ZrO₂ with the former being a major phase. Two-layered anodic oxide films, comprising an outer thin amorphous layer and an inner main layer of crystalline tetragonal ZrO₂ phase, are formed on the Zr–Al alloys containing 5 to 16 at.% aluminum. Further increase in the aluminum content to 26 at.% results in the formation of amorphous oxide layer throughout the thickness. The anodic oxide films become thin with increasing aluminum content, while the relative permittivity of anodic oxide shows a maximum at the aluminum content of 11 at.%. Due to major contribution of permittivity enhancement, the maximum capacitance of the anodic oxide films is obtained on the Zr–11 at.% Al alloy, being 1.7 times than on zirconium at the formation voltage of 100 V.     

Preparation of CuAlO<Subscript>2</Subscript> thin films with high transparency and low resistivity using sol–gel method

CuAlO₂ thin films were deposited on quartz substrates by sol–gel process using copper acetate monohydrate and aluminum nitrate nanohydrate as starting materials and isopropyl alcohol as solvent. The influence of annealing temperature on the film structure and the phase evolution of CuAlO₂ films were investigated, so as to obtain CuAlO₂ films with superior performance. The phase compositions of the films were dependent on the annealing temperature. The films annealed at temperatures below 400 °C were amorphous while those annealed above 400 °C were polycrystalline. The phases of CuO and CuAl₂O₄ appeared gradually with the increase of annealing temperature. When the heat treatment temperature was elevated to 900 °C, the uniform and dense films with single phase of CuAlO₂ were obtained, with a resistivity of 15 Ωcm. The transmittance of the 310 nm-thick CuAlO₂ film is 79% at 780 nm and the direct optical band gap is 3.43 eV.     

Influence of oxygen atmosphere on the photoluminescence properties of sol–gel derived ZrO2 thin films

Homogeneous and transparent ZrO₂ thin films were prepared by sol?Cgel dip coating method. The prepared ZrO₂ thin films were annealed in air and O₂ atmosphere at 500, 700 and 900?°C for 1, 5 and 10?h. X-Ray diffraction (XRD) pattern showed the formation of tetragonal phase with a change of stress in the films. Scanning electron microscope (SEM) revealed the nucleation and particle growth on the films. An average transmittance of >80?% (in UV?CVis region) was observed for all samples. The refractive index and direct energy band gap were found to vary as functions of annealing atmosphere, temperature and time. Photoluminescence (PL) revealed an intense emission peak at 379?nm weak emission peaks at 294, 586 and 754?nm. An enhancement of PL intensity was observed in films annealed in O₂ atmosphere. This is due to reconstruction of zirconium nanocrystals interfaces, which help passivate the non-radiative defects. At 900?°C, oxygen atoms react with Zr easily at the interface and destroy the interface states acting as emission centres and quench the PL intensity of the film. The enhancement of the luminescence properties of ZrO₂ by the passivation of non radiative defects presents in the films make it suitable for gas sensors development, tuneable lasers and compact disc (CD) read-heads.     

Microstructure,dielectric properties and optical band gap control on the photoluminescence behavior of Ba[Zr<Subscript>0.25</Subscript>Ti<Subscript>0.75</Subscript>]O<Subscript>3</Subscript> thin films

Ba[Zr_0.25Ti_0.75]O₃ (BZT) thin films were synthesized by the complex polymerization method and heat treated at 400 °C for different times and at 700 °C for 2 h. These thin films were analyzed by X-ray diffraction (XRD), Fourier-transform infrared (FT-IR) spectroscopy, field emission gun-scanning electron microscopy (FEG-SEM) and atomic force microscopy (AFM), Ultraviolet–visible (UV–vis) absorption spectroscopy, electrical and photoluminescence (PL) measurements. FEG-SEM and AFM micrographs showed that the microstructure and thickness of BZT thin films can be influenced by the processing times. Dielectric constant and dielectric loss of BZT thin films heat treated at 700 °C were approximately 148 and 0.08 at 1 MHz, respectively. UV–vis absorption spectra suggested the presence of intermediary energy levels (shallow and deep holes) within the band gap of BZT thin films. PL behavior was explained through the optical band gap values associated to the visible light emission components.     

ITO films on glass substrate by sol–gel technique: synthesis,characterization and optical properties

The present paper extensively demonstrates synthesis, characterization and optical properties of semiconductor indium tin oxide (ITO) thin films on glass substrate using sol–gel technique for gas sensor applications. Turbidity, pH values, wettability and rheological properties of the prepared solutions were measured to determine solution characteristics by turbidimeter, pH meter, contact angle goniometer and rheometer machines prior to coating process. Thermal, structural, microstructural, mechanical and optical properties of the coatings were characterized by differential thermal analysis–thermogravimetry (DTA/TG), fourier transform infrarared, X-ray diffraction (XRD), scanning electron microscopy, scratch tester, refractometer and spectrophotometer. Four different solutions were prepared by changing solvent concentration. Turbidity, pH, contact angle and viscosity values of the solutions were convenient for coating process. Glass substrates were coated using the solutions of InCl₃, SnCl₂, methanol and glacial acetic acid. The obtained gel films were dried at 300 °C for 10 min and subsequently heat-treated at 500 °C for 10 min in air. The oxide thin films were annealed at 600 °C for 60 min in air. DTA/TG results revealed that endothermic and exothermic reactions are observed at temperature between 70 and 560 °C due to solvent removal, combustion of carbon based materials and oxidation of Sn and In. The spectrum of ITO precursor film annealed at 500–600 °C shows an absence of absorption bands corresponding to organics and hydroxyls. In₂Sn₂O_7−x phase was dominantly found as well as SnO₂ with low intensity from XRD patterns. It was found that surface morphologies of the film change from coating island with homogeneous structures to regular surface and thinner film structures with increasing solvent concentration. The films prepared from the solutions with 8 mL methanol have better adhesion strength to the glass substrate among other coatings. Refractive index, thickness and band gap of ITO thin films were determined to be 1.3171, 0.625 μm and 3.67, respectively.     

Influence of PEG additive and annealing temperature on structural and electrochromic properties of sol–gel derived WO<Subscript>3</Subscript> films

Sol–gel derived tungsten oxide (WO₃) films have been deposited by spin coating route using acetylated peroxotungstic acid (APTA) or a mixture of APTA and polyethylene glycol (PEG) dissolved in ethanol as the precursor solution, followed by thermal treatment in air. The influence of PEG additive and annealing temperature on the structural and electrochromic (EC) behavior of the films have been investigated. For films annealed at 300 °C, a porous nanocrystalline/amorphous microstructure was obtained in the WO₃-PEG film, while monoclinic microstructure was formed in the pure WO₃ film. Moreover, for the WO₃-PEG films, the film microstructure was found to depend on the annealing temperature. Electrochemical studies indicate that the WO₃-PEG film annealed at 300 °C (WP-300) exhibits superior EC properties, which produces faster switching speed (t _c = 19 s, t _b = 3 s),better reversibility (K = 0.97) as well as higher optical modulation (ΔT = 32% at 550 nm) and coloration efficiency (η = 22 cm²/C at 550 nm). Our results suggest that PEG addition in combination with an appropriate annealing treatment can benefit the EC properties, arising from the ease of ion diffusion within the EC material, as evident from the nanocrystallines embedded into the amorphous matrix with a porous character.     

Effect of crystalline modification of the support on the reduction and catalytic properties of Cu/ZrO<Subscript>2</Subscript> catalysts in the steam reforming of bioethanol

A study was carried out on the steam reforming of bioethanol (15 vol.% ethanol in water) at 250–500 °C on copper catalysts supported on ZrO₂ of the monoclinic (Z) and yttrium-stabilized tetragonal crystalline modifications (YSZ). Copper nanoparticles in such catalysts have similar reactivity regardless of the copper content and crystalline modification of the support. Cu/YSZ is highly selective relative to CO₂, which may be related to enhanced mobility of oxygen in the support in the presence of Y₂O₃ stabilizing additive.     

MnO x /ZrO2 gel-derived materials for hydrogen peroxide decomposition

Manganese-yttrium-zirconium mixed oxide nanocomposites with three different Mn loadings (5, 15 and 30 wt%) were prepared by sol–gel synthesis. Amorphous xerogels were obtained for each composition. Their structural evolution with the temperature and textural properties were examined by thermogravimetry/differential thermal analysis, X-ray diffraction, diffuse reflectance UV–vis spectroscopy and N₂ adsorption isotherms. Mesoporous materials with high surface area values (70–100 m² g⁻¹) were obtained by annealing in air at 550 °C. They are amorphous or contain nanocrystals of the tetragonal ZrO₂ phase (T-ZrO₂) depending on the Mn amount and exhibit Mn species with oxidation state higher than 2 as confirmed by temperature programmed reduction experiments. T-ZrO₂ is the only crystallizing phase at 700 °C while the monoclinic polymorph and Mn₃O₄ start to appear only after a prolonged annealing at 1,000 °C. The samples annealed at 550 °C were studied as catalysts for H₂O₂ decomposition in liquid phase. Their catalytic activity was higher than that of previously studied Mn/Zr oxide systems prepared by impregnation. Catalytic data were described by a rate equation of Langmuir type. The decrease of catalytic activity with time was related to dissolution of a limited fraction (up to 15%) of Mn into the H₂O₂/H₂O solution.     

Hydrothermal synthesis and phase stability of Pb stabilized ZrO2 nanoparticles

The Pb doped metastable tetragonal ZrO₂ (t-ZrO₂:Pb) nanoparticles have been successfully synthesized by hydrothermal method. Pb ion doping has great effects on the phases, crystallite sizes and optical band gaps. Systematic structural characterization revealed that the introduction of Pb ion results in lattice expansion. The as-prepared t-ZrO₂:Pb with ca 4–6 nm in size has high specific surface area (>150 m²/g) and narrow particle size distributions. The diffuse reflectance spectra investigated that the band gap shifts from ultraviolet (E_g = 5.19 eV) for pure ZrO₂ to the visible region for t-ZrO₂:Pb and the gap can be effectively adjusted with the content of Pb in nanocrystals. Through thermal treatment, Pb ion doped in ZrO₂ crystals was excluded with increasing temperature. At 800 °C, the three t-ZrO₂:Pb samples of ZPO-2, ZPO-3 and ZPO-4 still contained the pure tetragonal phase, in which Pb content were not reduced to zero, while the transformation from tetragonal to monoclinic phase occurred due to zero Pb content in ZPO-1. The reason to this transformation and stabilized mechanism of Pb ion in ZrO₂ were discussed.     

Correlation between structural and optical properties of TiO<Subscript>2</Subscript>:ZnO thin films prepared by sol–gel method

We have studied structural and optical properties of thin films of TiO₂, doped with 5% ZnO and deposited on glass substrate (by the sol–gel method). Dip-coated thin films have been examined at different annealing temperatures (350–450 °C) and for various layer thicknesses (89–289 nm). Refractive index, porosity and energy band gap were calculated from the measured transmittance spectrum. The values of the index of refraction are in the range of 1.97–2.44, the porosity is in the range of 0.07–0.46 and the energy band gap is in the range of 3.32–3.43. The coefficient of transmission varies from 50 to 90%. In the case of the powder of TiO₂, doped with 5% ZnO, and aged for 3 months in ambient temperature, we have noticed the formation of the anatase phase (tetragonal structure with 20.23 nm grains). However, the undoped TiO₂ exhibits an amorphous phase. After heat treatments of thin films, titanium oxide starts to crystallize at the annealing temperature 350 °C. The obtained structures are anatase and brookite. The calculated grain size, depending on the annealing temperature and the layer thickness, is in the range of 8.61–29.48 nm.     

Characteristics of SnO2 thin films prepared by SILAR

SnO₂ thin films were deposited on glass substrates by using Successive Ionic Layer Adsorption and Reaction (SILAR) method at room temperature. The film thickness effect on characteristic parameters such as structural, morphological, optical and electrical properties of the films was studied. Also, the films were annealed in oxygen atmosphere (400 °C, 30 min) and characteristic parameters of the films were investigated. The X-ray Diffraction (XRD) and Scanning Electron Microscopy (SEM) studies showed that all the films exhibited polycrystalline nature with tetragonal structure and were covered well on glass substrates. After the investigation of the crystalline and surface properties of the films, it was found that they were improving with increasing film thickness. Optical band gap decreased from 3.90 eV to 3.54 eV and electrical conductivity changed between 0.015–0.815 (Ω-cm)⁻¹ as the film thickness increased from 215 to 490 nm. The refractive index (n), optical static and high frequency dielectric constants (ɛ_o, ɛ_∞) values were calculated by using the optical band gap values as a function of the film thickness.     

Structural and optical properties of ZnO thin films by the spin coating Sol-Gel method

ZnO thin films were deposited onto glass subsrates by a Sol-gel spin coating method. The structural and optical properties of ZnO thin films were investigated. The molar ratios of the zinc acetate dihydrate to Monoethanolamine were maintained 1:1. The as-grown film was sintered 250 °C for 10 min, then annealed in air at 500 °C for 30 min. The XRD results indicate that ZnO films were strongly oriented to the c-axis of the hexagonal nature. Absorption measurements were carried out as a function of temperature with 10 K steps in the range 10–320 K. The band gap energy was measured 3.275 and 3.267 eV for 0.5 and 1.0 molarity (M) ZnO thin films at 300 K. The steepness parameters were observed between 10 and 320 K and their extrapolations converged at (E₀, α₀) = 3.65 eV, 172,819 cm⁻¹ and 3.70 eV, 653,436 cm⁻¹ for 0.5 and 1.0 M ZnO thin films, respectively.     

Preparation and phase transition characterization of VO2 thin film on single crystal Si (100) substrate by sol–gel process

Vanadium dioxide (VO₂) thin films were fabricated on single crystal Si (100) substrates by sol–gel method, including a process of annealing a vanadium pentoxide (V₂O₅) gel precursor at different temperatures. The crystalline structure and morphology of the films were investigated by XRD, FE-SEM and AFM, indicating that the films underwent the grain growth, agglomeration and grain refinement process with increased annealing temperatures. The film annealed at 500 °C exhibits the formation of VO₂ phase with a strong (011) preferred orientation and high crystallinity, the surface of the film is uniform and compact with a grain size of about 120 nm. Meanwhile, the film exhibits excellent phase transition properties, with a decrease of transmittance from 35.5 to 2.5% at λ = 25 μm and more than 3 orders of resistivity magnitude variation bellow and above the phase transition temperature. The phase transition temperature is evaluated at 60.4 °C in the heating transition and 55.8 °C in the cooling transition. Furthermore, the phase transition property of the VO₂ film appears to be able to remain stable over repetitive cycles 100 times.     

Structural, Vibrational, and Gasochromic Properties of Porous WO3 Films Templated with a Sol-Gel Organic–Inorganic Hybrid

 The structure and the gasochromic properties of sol-gel-derived WO₃ films with a monoclinic structure (m-WO₃) were studied by focusing attention on the size of the monoclinic grains. The size of the m-WO₃ grains is modified by the addition of an organic–inorganic hybrid to the initial peroxopolytungstic acid (W-PTA) sols which are based on chemically bonded poly-(propylene glycol) to triethoxysilane end-capping groups (ICS-PPG). The results obtained with scanning electron microscopy (SEM) and transmission electron microscopy (TEM) show that the heat treatment (500°C) of WO₃/ICS-PPG (0.5, 1, 2, 5, and 10 mol%) composite films results in a change of their morphology, and nanodimensional pores are formed between the grains. High-resolution TEM (HRTEM) analysis revealed the presence of an amorphous phase on the outside of the m-WO₃ grains, whereas energy-dispersive X-ray spectra (EDXS) showed that this amorphous phase contained W and Si. Impregnation of the WO₃/ICS-PPG film with H₂PtCl₆/i-propanol solution followed by heat treatment at 380°C gave the films their gasochromic properties. Infrared and Raman spectroscopic studies of the WO₃/ICS-PPG film confirmed the results of the corresponding HRTEM and EDXS analysis. In situ UV/Vis and in situ IR spectra of the films were measured in hydrogen and in air, and colouring/bleaching changes and the corresponding kinetics were assessed. The IR spectra of gasochromically coloured films showed that the mesoporous WO₃/ICS-PPG (1 mol%) film transforms to tetragonal H _x WO₃ bronze. The IR spectra of the H _x WO₃ bronze are discussed with the aim to establish the existence of the metal-OH vibrations of gasochromically formed oxyhydroxide tungsten bronze.     

Fabrications of Nb-doped TiO<Subscript>2</Subscript> (TNO) transparent conductive oxide polycrystalline films on glass substrates by sol–gel method

Anatase Ti_0.94Nb_0.06O₂ (TNO) films were fabricated on glass substrates by sol–gel method using a dip-coating technique. The annealing treatment was separated into two steps, first in air at 350–550 °C for 1 h and then in vacuum of 4.0 × 10⁻⁴ Pa at 550 °C for 1 h. The influence of vacuum annealing treatment to the electrical and optical properties was discussed. Especially, the role of air annealing treatment from 350 to 550 °C on the crystallization and the structure of the films was analyzed. It is proved that the films annealed at 550 °C in air and then 550 °C in vacuum exhibited the minimum resistivity of 19.3 Ω·cm and the average optical transmittance of about 75% in the visible range, indicating that the sol–gel method is a feasible and promising method to fabricate TNO films.     

Sol–gel Al2O3/ZrO2 duplex films for protection of a γ-TiAl based alloy against high temperature oxidation

Al₂O₃/ZrO₂ duplex films were deposited on a γ-TiAl based alloy by sol–gel processing starting from aluminum isopropoxide (Al(OC₃H₇)₃) and zirconium (IV) oxychloride octahydrate (ZrOCl₂ · 8H₂O) as raw materials. Isothermal oxidation at 900 and 1,000 °C in 0.1 MPa O₂ and cyclic oxidation at 1,000 °C in air of the coated and uncoated specimens were performed to investigate the effect of the duplex films on the oxidation behavior of the γ-TiAl alloy. The results of the isothermal oxidation tests indicated that the parabolic rate constants of the alloy were decreased due to the applied thin film. Additionally, the present film exhibited a beneficial effect on the cyclic oxidation resistance of the alloy in air. The duplex film could restrain the growth of TiO₂, causing an increase of the Al₂O₃ content in the oxide mixture and thus decreased the oxidation rate.     

Influence of the synthesis media in the properties of CuO obtained by microwave-assisted hydrothermal method

Copper monoxide (CuO) was successfully obtained by microwave-assisted hydrothermal method, using different conditions—in a solution without base, in a solution alkalinized with NaOH or with NH₄OH. The powders were analyzed by thermal analysis (TG/DTA), X-ray diffraction (XRD), infrared spectroscopy, UV–Visible spectroscopy, and scanning electronic microscopy. XRD results showed that CuO was obtained with monoclinic structure and without secondary phases. Thermal analysis and infrared spectra indicated the presence of acetate groups on the powder surface. TG curves also showed a mass gain assigned to the Cu(I) oxidation indicating that a reduction possibly occurred during synthesis. The high and broad absorption band in the UV–Vis spectroscopy from 250 to 750 nm indicated the coexistence of Cu(II) and Cu(I), confirming the Cu(II) reduction, inside the CuO lattice. It was also possible to confirm the Cu(II) reduction by a displacement of the Me–O vibration bands observed in the IR spectra at around 500 cm⁻¹.