Collective dynamics of supercritical water

Inelastic X-ray scattering experiments on sub- and supercritical water were performed to investigate collective dynamics of this unique solvent. Analysis within a generalized Langevin formalism shows that the positive dispersion of the sound velocity, as compared to the hydrodynamic value, first decreases (1.0<ρ<0.8 g cm⁻³) at all measured momentum transfers (1.3-10.7 nm⁻¹), and then increases (0.7<ρ<0.26 g cm⁻³) again only at higher momentum transfers. We suggest the initial decrease is due to approaching the percolation limit in the number of hydrogen bonds, and the subsequent increase is due to the formation of rigid dimers in sub- and supercritical water.     

Diffusion of Li ion in graphite cluster model at 800 K: a direct molecular orbital dynamics study

Using the hydrogen terminated planar cluster model, C₅₄H₁₈, the stabilization site of Li⁺ ion was determined by the unrestricted Hartree-Fock (UHF) AM1 energy gradient method. Six kinds of stabilization sites are considered, suggesting that the Li⁺ ion is rather stable at the two distinct sites in the bulk where the potential energy difference between them is 2.0 kcal/mol. For the Li⁺ ions stabilized at these two sites, the diffusion processes were simulated at 800 K through the direct molecular orbital dynamics procedure which was newly developed by one of the present authors. No jumping diffusion occurs with Li⁺ ions among the stabilization sites, but they diffuse along the outline of the cluster model with the fluctuations. It takes 2.0 ps for a Li⁺ ion to diffuse from the lower potential site to another equivalent site. On the other hand, it takes 0.7 ps to move from the higher potential site to the unstable circumference site composed of corner (armchair edge) carbon atoms. As the result, the diffusivity is approximated as 10⁻⁸-10⁻⁷ m²/s.     

Synthesis of amorphous boron carbide by single and multiple charged boron ions bombardment of fullerene thin films

In this paper, results of structural modification of fullerene thin films by single and multiple charged boron ions (B⁺, B³⁺) are presented. The applied ion energies were in the range of 15-45 keV. The characterization of as-deposited and irradiated specimens has been performed by atomic force microscopy, Raman and Fourier transform infrared spectroscopy and UV/vis spectrophotometry. The results of Raman analysis have shown the formation of amorphous layer after irradiation of fullerene thin films. Fourier transform infrared spectroscopy has confirmed the formation of new B-C bonds in irradiated films at higher fluences (2 × 10¹⁶ cm⁻²). The morphology of bombarded films has been changed significantly. The optical band gap was found to be reduced from 1.7 to 1.06 eV for irradiated films by B³⁺ ions and 0.7 eV for irradiated films by B⁺ ions.     

Microgravimetric and voltammetric study of Zn underpotential deposition on platinum in alkaline medium

The microgravimetric and voltammetric responses of a polycrystalline Pt electrode in 0.1 mol L⁻¹ NaOH solution in the presence and the absence of 1.6 × 10⁻⁴ Zn²⁺, at 0.1 V s⁻¹ were analyzed. During the positive potential sweep, the water molecules are progressively substituted by OH⁻ ions, prior to PtO formation. The voltammetric charges obtained under the Zn_ads dissolution peaks suggest that 0.7 monolayers are deposited, with each Zn ad-atom occupying one active site and transferring two electrons. The total loss of mass due to the dissolution of the Zn ad-layer was 136.6 ng cm⁻² and the mass increase due to PtO formation was found to be only 12 ng cm⁻² less than the theoretical ones, 157.5 and 37.4 ng cm⁻², respectively, indicating that both processes are overlapped. In this way it is proposed that an adsorbed by-layer of Zn and OH⁻ ions is formed.     

Influence of primary ion species on the secondary cluster ion emission process from SAMs of hexadecanethiol on gold

In order to investigate the secondary cluster ion emission process of organo-metallic compounds under keV ion bombardment, self-assembled monolayers (SAMs) of alkanethiols on gold are ideal model systems. In this experimental study, we focussed on the influence of the primary ion species on the emission processes of gold-alkanethiolate cluster ions from a hexadecanethiol SAM on gold. For this purpose, we carried out time-of-flight secondary ion mass spectrometry (TOF-SIMS) measurements using the following primary ion species and acceleration voltages: Ar⁺, Xe⁺, SF₅⁺ (10 kV), Bi⁺, Bi₃⁺(25 kV), Bi₃²⁺, Bi₅²⁺, Bi₇²⁺ (25 kV).It is well known that molecular ions M⁻ and gold-alkanethiolate cluster ions Au_xM_y⁻ with M = S-(CH₂)₁₅-CH₃, x − 3 ≤ y ≤ x + 1, x, y > 0, show intense peaks in negative mass spectra. We derived yields Y_SI exemplarily for the molecular ions M⁻ and the gold-hexadecanethiolate cluster ions Au_y+1M_y⁻ up to y = 8 and found an exponentially decreasing behaviour for increasing y-values for the cluster ions.In contrast to the well-known increase in secondary ion yield for molecular secondary ions when moving from lighter to heavier (e.g. Ar⁺ to Xe⁺) or from monoatomic to polyatomic (e.g. Xe⁺ to SF₅⁺) primary ions, we find a distinctly different behaviour for the secondary cluster ions. For polyatomic primary ions, there is a decrease in secondary ion yield for the gold-hexadecanethiolate clusters whereas the relative decrease of the secondary ion yield ξ_Y with increasing y remains almost constant for all investigated primary ions.     

Damage formation in Ge during Ar and He implantation at 15 K

Ar⁺ and He⁺ ions were implanted into Ge samples with (1 0 0), (1 1 0), (1 1 1) and (1 1 2) orientations at 15 K with fluences ranging from 1×10¹¹ to 1×10¹⁴ cm⁻² for the Ar⁺ ions and fluences ranging from 1×10¹² to 6×10¹⁵ cm⁻² for the He⁺ ions. The Rutherford backscattering (RBS) technique in the channelling orientation was used to study the damage built-up in situ. Implantation and RBS measurements were performed without changing the target temperature. The samples were mounted on a four axis goniometer cooled by a close cycle He cryostat. The implantations were performed with the surface being tilt 7° off the ion beam direction to prevent channelling effects. After each 300 keV Ar⁺ and 40 keV He⁺ implantation, RBS analysis was performed with 1.4 MeV He⁺ ions.For both the implantation ions, there is about no difference between the values found for the damage efficiency per ion for the four different orientations. This together with the high value (around 5 times higher than that found in Si), gives rise to the assumption of amorphous pocket formation per incident ion, i.e. direct impact amorphization, already at low implantation fluences. At higher fluences, when collision cascades overlap, there is a growth of the already amorphized regions.     

The influence of the cholesterol microenvironment in tissue sections on molecular ionization efficiencies and distributions in ToF-SIMS

High-resolution images of cholesterol were obtained from Lymnaea stagnalis nervous tissue using metal-assisted (MetA) time-of-flight secondary ion mass spectrometry (ToF-SIMS). The spatial distributions of different pseudomolecular ions of cholesterol [M − H]⁺, [M − OH]⁺ and [2M + Au]⁺, illustrate the influence of the tissue microenvironment on the ionization efficiencies of these ions. These biological matrix effects result in differences in localizations of molecular ions derived from the same molecular species.     

Primary ion fluence dependence in time-of-flight SIMS of self-assembled monolayer of alkyl thiol molecules on Au(1 1 1)—Discussion of static limit

The nondestructive nature of static secondary ion mass spectrometry (SIMS) in the context of studies of self-assembled monolayers (SAMs) of organic molecules has been examined by measuring the primary ion fluence dependence of secondary ion signals with two well-known SAMs, C₁₈H₃₇SH on Au(1 1 1) and C₁₈H₃₇PO₃H₂ on freshly cleaved mica. This SIMS analysis is challenging because the bonding nature is delicate and the areal molecular density is less than 10¹⁵ cm⁻². In SIMS, it is prevalently assumed that if the primary ion fluence is confined to not more than 1 × 10¹² cm⁻², all secondary ion signals should not change by more than 10% and the practically defined static condition is satisfied. Our results from time-of-flight SIMS with the common primary ions of Bi₃⁺, Bi⁺ and Ar⁺, indicate that this prevalent static assumption fails for both model SAMs. The SIMS results from the phosphyl case, which have been recently published, consistently display the evidence of bombardment-induced damage. In comparison, the thiol case presented here shows much more complex primary ion fluence dependence of SIMS signals. It is therefore concluded that practical static analysis should use primary ion fluence not more than 1 × 10¹¹ cm⁻² or should simply record and report the effects of primary ion fluence.     

Infrared spectra and stability of CO and H2O sorption over Ag-exchanged ZSM-5 zeolite: DFT study

The infrared spectra and stability of CO and H₂O sorption over Ag-exchanged ZSM-5 zeolite were investigated by using density function theory (DFT). The changes of NBO charge show that the electron transfers from CO molecule to the Ag⁺ cation to form an σ-bond, and it accompanies by the back donation of d-electrons from Ag⁺ cation to the CO (π*) orbital as one and two CO molecules are adsorbed on Ag-ZSM-5. The free energy changes ΔG, −5.55 kcal/mol and 6.52 kcal/mol for one and two CO molecules, illustrate that the Ag⁺(CO)₂ complex is unstable at the room temperature. The vibration frequency of C-O stretching of one CO molecule bonded to Ag⁺ ion at 2211 cm⁻¹ is in good agreement with the experimental results. The calculated C-O symmetric and antisymmetric stretching frequencies in the Ag⁺(CO)₂ complex shift to 2231 cm⁻¹ and 2205 cm⁻¹ when the second CO molecule is adsorbed. The calculated C-O stretching frequency in CO-Ag-ZSM-5-H₂O complex shifts to 2199 cm⁻¹, the symmetric and antisymmetric O-H stretching frequencies are 3390 cm⁻¹ and 3869 cm⁻¹, respectively. The Gibbs free energy change (ΔGH₂O) is −6.58 kcal/mol as a H₂O molecule is adsorbed on CO-Ag-ZSM-5 complex at 298 K. The results show that CO-Ag-ZSM-5-H₂O complex is more stable at room temperature.     

Towards XUV lasers with charge transfer pumping

Detailed studies of charge exchange pumping of ions in femtosecond laser-produced plasmas colliding with a pulsed gas jet are presented. Strong selective excitation of XUV ionic transitions in the reaction C⁴⁺ + H → C³⁺ + H⁺ is observed. Dependences of line intensities on various experimental parameters are reported which are in good agreement with the theory of charge transfer processes. Analyses of experimental data provide evidence that an efficient charge exchange pumping is realized at densities of reagents well in excess of 10¹⁶ cm⁻³, which is essential for the realization of XUV lasers. In preliminary investigations of the reaction C⁶⁺ + H → C⁵⁺ (n = 3, 4) + H⁺ a strong increase of line intensities at 13.5 and 18.2 nm is reported. Analysis of lasing in Na-like ions with an example for Chlorine promises even more efficient pumping as compared with the before analyzed hydrogen like ions.     

Determination of albumins by its quenching effect on the fluorescence of Tb-oxolinic acid complex in presence of sodium dodecyl sulphate

It is found that the fluorescence intensity of Tb³⁺-oxolinic acid (OA) complex can be greatly quenched by albumins in sodium dodecyl sulphate (SLS). Under optimum conditions, the quenched fluorescence intensity is in proportion to the concentration of proteins in the range of 5.0×10⁻⁸-1.0×10⁻⁵ g ml⁻¹ for bovine serum albumin (BSA), 1.0×10⁻⁷-1.0×10⁻⁵ g ml⁻¹ for human serum albumin (HSA) and 4.0×10⁻⁷-1.0×10⁻⁵ g ml⁻¹ for egg albumin (EA). Their detection limits (S/N=3) are 2.1×10⁻⁸, 2.5×10⁻⁸ and 5.0×10⁻⁸ g ml⁻¹, respectively. In addition, the interaction mechanism is also investigated.     

Polyethylene terephthalate (PET) bulk film analysis using C60, Au3, and Au primary ion beams

The damage characteristics of polyethylene terephthalate (PET) have been studied under bombardment by C₆₀⁺, Au₃⁺ and Au⁺ primary ions. The observed damage cross-sections for the three ion beams are not dramatically different. The secondary ion yields however were significantly enhanced by the polyatomic primary ions where the secondary ion yield of the [M + H]⁺ is on average 5× higher for C₆₀⁺ than Au₃⁺ and 8× higher for Au₃⁺ than Au⁺. Damage accumulates under Au⁺ and Au₃⁺ bombardment while C₆₀⁺ bombardment shows a lack of damage accumulation throughout the depth profile of the PET thick film up to an ion dose of ∼1 × 10¹⁵ ions cm⁻². These properties of C₆₀⁺ bombardment suggest that the primary ion will be a useful molecular depth profiling tool.     

Study of nitrogen ion implantation and diffusion phenomena on thin chromium layers followed by the atomic force microscopy and secondary ion mass spectroscopy techniques characterization

This research investigates the effect of ion implantation dosage level and further thermal treatment on the physical characteristics of chromium coatings on Si(1 1 1) substrates. Chromium films had been exposed to nitrogen ion fluencies of 1 × 10¹⁷, 3 × 10¹⁷, 6 × 10¹⁷ and 10 × 10¹⁷ N⁺ cm⁻² with a 15 keV energy level. Obtained samples had been heat treated at 450 °C at a pressure of 2 × 10⁻² Torr in an argon atmosphere for 30 h. Atomic force microscopy (AFM) images showed significant increase in surface roughness as a result of nitrogen ion fluence increase. Secondary ion mass spectroscopy (SIMS) studies revealed a clear increased accumulation of Cr₂N phase near the surface as a result of higher N⁺ fluence. XRD patterns showed preferred growth of [0 0 2] and [1 1 1] planes of Cr₂N phase as a result of higher ion implantation fluence. These results had been explained based on the nucleation-growth of Cr₂N phase and nitrogen atoms diffusion history during the thermal treatment process.     

Ar irradiation of Si nanocrystal-doped SiO2: Evolution of photoluminescence

We report the evolution of photoluminescence (PL) of Si nanocrystals (nc-Si) embedded in a matrix of SiO₂ during Ar⁺ ion bombardment. The integrated intensity of nc-Si PL falls down drastically before the Ar⁺ ion fluence of 10¹⁵ ions cm⁻², and then decreases slowly with the increasing ion fluence. At the meantime, the PL peak position blueshifts steadily before the fluence of 10¹⁵ ions cm⁻², and then changes in an oscillatory manner. Also it is found that the nc-Si PL of the Ar⁺-irradiated sample can be partly recovered after annealing at 800 °C in nitrogen, but can be almost totally recovered after annealing in oxygen. The results confirm that the ion irradiation-induced defects are made up of oxygen vacancies, which absorb light strongly. The oscillatory peak shift of nc-Si can be related to a size-distance distribution of nc-Si in SiO₂.     

Influence of Ni deposition and subsequent N ion implantation at different substrate temperatures on nano-structure and corrosion behaviour of type 316 and 304 stainless steels

Ni thin films of 250 nm thicknesses were coated on type 304 and 316 stainless steels and post N⁺ ion implanted at 15 keV energy with a fluence of 5 × 10¹⁷ N⁺ cm⁻² at different substrate temperatures. Surface nano-structure of the samples were analysed using X-ray diffraction (XRD), atomic force microscopy (AFM) before corrosion test and scanning electron microscopy (SEM) after corrosion test. Corrosion behaviour of the samples in 1.0 M H₂SO₄ solution was investigated by means of potentiodynamic technique. Nano-structure and crystallography of the films showed the development of Ni₃N(1 1 1) and Ni₄N(2 0 0) orientations with a minimum surface roughness and grain size at 400 K substrate temperature. The highest corrosion resistance with a corrosion current of 0.01 μA cm⁻² (for SS(316)) and 0.56 μA cm⁻² (for SS(304)) was achieved in case of samples which were N⁺ ion implanted at 400 K. Results for both types of stainless steels showed good agreement and the better performance of SS(316) was attributed to the 2% molybdenum contents in the alloy composition of this type of stainless steel, which enhances the effectiveness of nitrogen in retarding the corrosion process.     

Observation of fast sound in metal-nonmetal transition in liquid Hg

Liquid Hg undergoes the metal-nonmetal (M-NM) transition when it is expanded from 13.6 g cm⁻³ at ambient conditions to 9 g cm⁻³ at high temperature and high pressure. To investigate collective and single particle motions in expanded fluid Hg, we have made inelastic X-ray scattering experiments and obtained the dynamic structure factor, S(Q,ω), of fluid Hg. We analyzed S(Q,ω) within the framework of generalized hydrodynamics and found that the excitation energies of collective modes disperse three times as fast as the hydrodynamic sound velocity in the M-NM transition region at 9 g cm⁻³. The results indicate the existence of fast sound in expanded fluid Hg accompanying the metal-non-metal transition and strongly hint that fluctuations intrinsic to the M-NM transition are induced on atomic length scale and sub-picosecond time scale.     

Deposition and electrostatic removal of gaseous organic contaminants on substrate surfaces

The adhesion behavior of di-n-butyl phthalate (DBP) onto different substrates (quartz, glass, and silicon) used as wafer surfaces was studied by using an in situ UV spectrophotometric technique. The results from the closed cell experiments revealed that greatest extent of DBP adhesion occurred on the quartz chip (0.154 μg cm⁻²), followed in the order by the glass (0.054 μg cm⁻²) and silicon (0.039 μg cm⁻²). By means of the in situ spectrophotometric observation, application of an electrical field at 290 V cm⁻¹ in the cell proved to be effective in inducing charging of DBP aerosols, which were consequently attracted towards the electrodes. This method can be applied to wafer storage and transport equipments to prevent wafer contamination from material outgassing representative by DBP.     

Effect of Cr implantation on structural and optical properties of AlN thin films

Molecular beam epitaxy (MBE) grown AlN thin layer on sapphire substrates have been implanted with Cr⁺ ions for various dose from 10¹³ to 10¹⁵ cm⁻². The analyses were carried out by an X-ray diffractometer (XRD), Raman spectroscopy, a spectrophotometer and spectroscopic ellipsometry (SE) for structural and optical analyses. E₂(high) and A₁(LO) Raman modes of AlN layer have been observed and analyzed. The behavior of Raman shift and the variation in intensity and in peak width of Raman modes as a function of ions flux are explained on the basis of chromium substituting aluminum atom and implantation-induced lattice damage. Both Raman and X-ray analyses reveal that the incorporation of chromium atoms increases in the host lattice with the increasing of Cr ions fluence. The band gap energy was determined by using transmission spectra. It was found that the band gap energy decreases as the ion dose increases. The band gap of the unimplanted AlN is 6.02 eV and it decreases down to 5.92 eV for the Cr⁺-implanted AlN with a ion dose of 1×10¹⁵ cm⁻². Optical properties such as optical constants of the samples were examined by using a spectroscopic ellipsometer. It was observed that the refractive index (n) decreases with the increasing of ion dose.     

Interatomic potentials for the ground state X 0 and the two excited states 1, 0 of the intercombination cadmium line 326.1 nm broadened by Kr pressure

The temperature dependence of the Cd line absorption profile at 326.1 nm perturbed by Kr has been carefully studied over a spectral range extending from 800 cm⁻¹ in the blue wing to 1200 cm⁻¹ in the red wing using a high-resolution double-beam spectrometer. The atomic densities of krypton (N_Kr) and cadmium (N_Cd) were (2.015±0.07)×10¹⁹ and (3.62±0.05)×10¹⁸ cm⁻³, respectively. The temperature dependence of the studied line profile was analyzed in the framework of the quasi-static theory. The van der Waals coefficient differences between the ground ¹0⁺ state and the two excited states ³0⁺ and ³1 (ΔC₆⁰ and ΔC₆¹) were obtained from the near red wing profile using Kuhn's law. The values of ΔC₆⁰ and ΔC₆¹ are found to be equal to 37.8±2 and 58.5±3 eV Å⁶, respectively. The ground (X ¹0⁺), and the excited (³1, ³0⁺) state potentials at the internuclear separations from 3.2 to 6.3 Å were determined. The well depths with their positions for these states are respectively equal to 134±7 cm⁻¹, 3.95±0.2 Å; 72.3±4 cm⁻¹, 4.95±0.3 Å; and 471±12 cm⁻¹, 3.6 Å. The obtained well depths with their allowable errors are in good agreement with the values obtained before for the Cd-Kr system from some theoretical results and molecular beams experiments.     

Formation of nanodots on oblique ion sputtered InP surfaces

Using a field emission gun based scanning electron microscopy, we report the formation of nanodots on the InP surfaces after bombardment by 100 keV Ar⁺ ions under off-normal ion incidence (30° and 60° with respect to the surface normal) condition in the fluence range of 1 × 10¹⁶ to 1 × 10¹⁸ ions cm⁻². Nanodots start forming after a threshold fluence of about 1 × 10¹⁷ ions cm⁻². It is also seen that although the average dot diameter increases with fluence the average number of dots decreases with increasing fluence. Formation of such nanostructured features is attributed due to ion-beam sputtering. X-ray photoelectron spectroscopy analysis of the ion sputtered surface clearly shows In enrichment of the sputtered InP surface. The observation of growth of nanodots on the Ar⁺-ion sputtered InP surface under the present experimental condition matches well with the recent simulation results based on an atomistic model of sputter erosion.