Transient field measurements on light and heavy ions in amorphous iron-boron compounds

Measurements of transient magnetic fields (TF) were performed for the first time in the amorphous compounds of Fe₈₀B₂₀ and Fe₈₅B₁₅ for ²⁴Mg(2⁺), ²⁸Si(2⁺), ⁴⁸Ti(2⁺) and ⁵⁶Fe(2⁺) probe ions employing light and heavy ion beams. The motivation for these experiments was to investigate whether ion beam induced attenuations of TF are substantially weaker in these materials than in crystalline Fe. This expectation was indeed satisfied. The attenuations observed were found to be smaller at least by a factor of 2.     

Nuclear deorientation of W,Os and Pt recoiling in vacuum at 0.02c

The attenuations of γ-ray angular correlations have been measured for some 2⁺ and 4⁺ nuclear states in W. Os and Pt ions recoiling in vacuum with a velocity of 0.02c. The states were Coulomb excited by beams of 100 MeV³²S ions and the recoil-distance method was used to measure the time-dependence of the attenuations during the first 70 ps of the flight time. A simple parametrization was found to fit all the data and was used in a re-analysis of a published recoil-in-vacuum experiment on^{204, 206}Pb to give upper limits on theg factors of the 2 ₁ ⁺ states of |g(204)|<0.01 and |g(206)|<0.015.     

In-beam magnetization measurements of thin Fe foils and simultaneous observation of the transient magnetic field at Pd ions

The well established phenomenon of heavy ion beam induced attenuations of transient magnetic fields (TF) was studied by measuring the in-beam magnetization of bombarded Fe foils employing the magneto-optical Kerr-effect. Whereas the macroscopic magnetization did not show any deterioration, the simultaneously measured TF of recoiling¹⁰⁸Pd(2⁺) ions was found to be substantially attenuated.Dedicated to Prof. Dr. P. Kienle on the occasion of his 60th birthday     

New aspect in transient magnetic fields using heavy ion beams

Transient field precessions have been measured with the first excited 2 ₁ ⁺ -state as probe for ions of²⁸Si traversing Fe at v_ion?1v₀ and 13v₀(v₀=c/137) and⁶²Ni being stopped in Fe. The degree of polarization deduced for the Si ions, p_1s=0.19(6), is consistent with low-velocity data. There is clear evidence that the field strength is attenuated by heavy ion beams. For the⁶²Ni(2 ₁ ⁺ ) state at 1.173 MeV a g-factor value of g=0.34(7) was obtained in good agreement with a previous result.     

Cluster SIMS using metal cluster complex ions

Metal cluster complexes are chemically synthesized organometallic compounds, which have a wide range of chemical compositions with high molecular weight. Using a metal cluster complex ion source, sputtering characteristics of silicon bombarded with normally incident Ir₄(CO)₇⁺ ions were investigated. Experimental results showed that the sputtering yield at 10 keV was 36, which is higher than that with Ar⁺ ions by a factor of 24. In addition, secondary ion mass spectrometry (SIMS) of boron-delta-doped silicon samples and organic films of poly(methyl methacrylate) (PMMA) was performed. Compared with conventional O₂⁺ ion beams, Ir₄(CO)₇⁺ ion beams improved depth resolution by a factor of 2.5 at the same irradiation conditions; the highest depth resolution of 0.9 nm was obtained at 5 keV, 45° with oxygen flooding of 1.3 × 10⁻⁴ Pa. Furthermore, it was confirmed that Ir₄(CO)₇⁺ ion beams significantly enhanced secondary ion intensity in high-mass region.     

Monoatomic and cluster beam effect on ToF-SIMS spectra of self-assembled monolayers on gold

Self-assembled monolayers represent well-defined systems that is a good model surface to study the effect of primary ion beams used in secondary ion mass spectrometry. The effect of polyatomic primary beams on both aliphatic and aromatic self-assembled monolayers has been studied. In particular, we analysed the variation of the relative secondary ion yield of both substrate metal-cluster (Au_n⁻) in comparison with the molecular ions (M⁻) and clusters (M_xAu_y⁻) by using Bi⁺, Bi₃⁺, Bi₅⁺ beams. Moreover, the differences in the secondary ion generation efficiency are discussed. The main effect of the cluster beams is related to an increased formation of low-mass fragments and to the enhancement of the substrate related gold-clusters. The results show that, at variance of many other cases, the static SIMS of self-assembled monolayers does not benefit of the use of polyatomic primary ions.     

Infrared multiple-photon dissociation of ion-molecules in a beam

First experiments on the infrared multiple-photon dissociation with ion molecules in beams have been carried out. A mass selected beam of SF⁺₅ parent ions is crossed with a focused pulsed CO₂ laser beam. Using mass spectroscopy for the detection, fragmentation into SF⁺₄ and SF⁺₃ has been observed. The relative yield and power dependence have been measured. Features of the MPD of ions in beams are discussed.     

Analysis of TOF-SIMS spectra from fullerene compounds

We analyzed TOF-SIMS spectra obtained from three different size of fullerenes (C₆₀, C₇₀ and C₈₄) by using Ga⁺, Au⁺ and Au₃⁺ primary ion beams and investigated the fragmentation patterns, the enhancement of secondary ion yields and the restraint of fragmentation by using cluster primary ion beams compared with monoatomic primary ion beams. In the TOS-SIMS spectra from C₇₀ and C₈₄, it was found that a fragment ion, identified as C₆₀⁺ (m/z = 720), showed a relatively high intensity compared with that of other fragment ions related to C₂ depletion. It was also found that the Au₃⁺ bombardment caused intensity enhancement of intact molecules (C₆₀⁺, C₇₀⁺ and C₈₄⁺) and restrained the fragmentation due to C₂ depletion.     

Molecular adsorbate detection using hyperthermal Cs+ surface scattering: chemisorbed water on Si(111)

Cs⁺ ion beams are scattered from an Si(111) surface chemisorbed with water. Scattering of Cs⁺ ions from the surface at the incidence energies of 10–;15 eV gives rise to reaction products CsOH⁺, CsOH⁺₂ and CsSiO⁺. We interpret that these cluster ions are formed by desorption of X (X = OH, H₂O and SiO), followed by Cs⁺X association and energy quenching near the surface. The Cs⁺ scattering method has potential advantages for adsorbate detection over desorption techniques, in particular for identification of molecular and thermally unstable species.     

Interplay of native defect-related photoluminescence response of ZnO nanosticks subjected to 80 keV Ar ion irradiation

We report on the effect of 80 keV Ar⁺ ion irradiation on the luminescence response of zinc oxide (ZnO) nanosticks synthesized using a simple microemulsion route. The formation of nanoscale rods was confirmed from the transmission electron microscopy, whereas the hexagonal wurtzite phase of the nanorods was detected in an X-ray diffraction pattern. The photoluminescence pattern of the nanorods was dominated by various native defect states of ZnO, which are responsible for the quenching of the typical band edge emission of ZnO. Under Ar⁺ ion irradiation at a fluence of 1×10¹³ ions/cm², the band edge emission was recovered owing to the suppression of oxygen vacancy defects. In addition, the formation of new zinc vacancy and ionized zinc interstitial defects were also evident. Conversely, the band edge emission was found to be quenched as a result of the creation of more oxygen vacancy (V_O) defects due to ion irradiation (fluence: 1×10¹⁵ ions/cm²). The nuclear energy loss of the Ar⁺ ions in ZnO is responsible for the formation of point (vacancy-related) defects, while relatively small amount of electronic energy loss of the Ar⁺ ion results in the ionization of the neutral zinc interstitial (Zn_i) defects. The energy deposition scheme of the energetic ions has been elaborated with the help of theoretical modeling that explains the observed features quite satisfactorily.     

On the possibility of a forecast for off-centre configuration of Ag+ and Cu+ in alkali halide crystals

Summary The simple cut criterion based on the accurate determination of the radii of the ions in alkali halides and previously introduced by the authors for forecasting off-centre configuration of Li⁺ and F⁻ has been extended to heavy ions (Ag⁺ and Cu⁺). It has been found that this criterion is valid for the Ag⁺ ion, whereas for Cu⁺ gives a less precise forecast because of the lack in knowledge of the effective partial charge on Cu⁺ ion. It has been evidenced that the critical value of the ratior ₊ ^* /r ₊ between impurity and host ion radius which allows off-centre configuration is dependent on the impurity ion mass. Work jointly supported by the Ministero della Pubblica Istruzione and by Consiglio Nazionale delle Ricerche, Gruppo Nazionale di Struttura della Materia.     

Polyethylene terephthalate (PET) bulk film analysis using C60, Au3, and Au primary ion beams

The damage characteristics of polyethylene terephthalate (PET) have been studied under bombardment by C₆₀⁺, Au₃⁺ and Au⁺ primary ions. The observed damage cross-sections for the three ion beams are not dramatically different. The secondary ion yields however were significantly enhanced by the polyatomic primary ions where the secondary ion yield of the [M + H]⁺ is on average 5× higher for C₆₀⁺ than Au₃⁺ and 8× higher for Au₃⁺ than Au⁺. Damage accumulates under Au⁺ and Au₃⁺ bombardment while C₆₀⁺ bombardment shows a lack of damage accumulation throughout the depth profile of the PET thick film up to an ion dose of ∼1 × 10¹⁵ ions cm⁻². These properties of C₆₀⁺ bombardment suggest that the primary ion will be a useful molecular depth profiling tool.     

Progress and upgrading of the Heidelberg high current injector

A specialized rf-accelerator system HSI consisting of two RFQ’s and 8 rf seven-gap cavities was built for injection of high intensities of singly charged heavy ions into the Heidelberg heavy ion storage ring TSR. With different ion sources, this system now is used to deliver positive or negative, atomic and molecular ion beams with energies between 150 keV/a.m.u. and 5.3 MeV/a.m.u. final energy. For a future replacement of the MP-tandem-postaccelerator-system the new HSI-accelerator is to be equipped with an ECR source for high intensities of highly charged ions. An advanced commercial ECR source with a 18 GHz rf klystron and an adjustable extraction system for adaption of a wide range of injection energies has been commissioned at the manufacturer and is delivered. Test bench operation presently is in preparation at Heidelberg. A stripper section with an achromatic charge state selector is under construction between injector and postaccelerator. Other ion sources, e.g., for ultra cold H ₃ ⁺ molecular ion beams are under development.     

On the nature of ion bombardment-induced phase transformations in films of transition metals

Abstract

Electron diffraction studies have been made of polycrystalline Ni films irradiated with well separated beams of ions of different nature, namely ions of inert (He⁺, Ne⁺, Ar⁺, Kr⁺, Xe⁺) and reactive (N⁺ and O⁺) gases. The Ni films were prepared under vacuum conditions (P? 3·10^?6Pa during evaporation) preventing an appreciable contamination of the films with impurities. The samples were irradiated at T? 300 K with ion beams of energies from 10 to 100 keV in the dose range between 5·10¹⁶ cm^?2 and the value leading to sample destruction.

Irradiation with noble gas ions revealed no phase transitions in the Ni films. A similar result was obtained in irradiation of Fe and Cr films with He⁺ ions. The bombardment of Ni films with reactive gas ions does cause changes in the lattice structure of the samples under study, depending on the nature of the bombarding ions. The N⁺ ion bombardment gives rise to the hcp phase with the lattice parameters typical of the Ni₃N compound, and the O⁺ ion bombardment results in the fcc phase with the NiO-type parameter.

The conclusion is drawn on the chemical origin of the phase transformations in the Ni films under ion bombardment. The necessity of revising the concept about the polymorphous nature of phase transformations induced in the films of transition metals by ion bombardment is substantiated.     

Laser-driven generation of fast particles

The great progress in high-peak-power laser technology has resulted recently in the production of ps and subps laser pulses of PW powers and relativistic intensities (up to 10²¹ W/cm²) and has laid the basis for the construction of multi-PW lasers generating ultrarelativistic laser intensities (above 10²³ W/cm²). The laser pulses of such extreme parameters make it possible to produce highly collimated beams of electrons or ions of MeV to GeV energies, of short time durations (down to subps) and of enormous currents and current densities, unattainable with conventional accelerators. Such particle beams have a potential to be applied in numerous fields of scientific research as well as in medicine and technology development. This paper is focused on laser-driven generation of fast ion beams and reviews recent progress in this field. The basic concepts and achievements in the generation of intense beams of protons, light ions, and multiply charged heavy ions are presented. Prospects for applications of laser-driven ion beams are briefly discussed.     

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

A note on the radiative energy loss from an ion-bombarded surface

It has recently been argued that the heat radiation from spikes, according to the Stefan-Boltzmann law, plays an important role in thermal behaviour of a copper target bombarded with 100keV Xe⁺ ions. In this work we have monitored the temperature evolution of a copper bar subjected to a 40 keV N⁺, Xe⁺, Sb₂ ⁺, and a 20 keV Sb⁺ ion bombardment. Our measurements have not revealed any substantial differences between light and heavy ion bombardment as well as between atomic and molecular implantation. Those results are in agreement with the time constant for radiation being long, of order 10⁻⁶s. They also agree with the calculations of the radiative energy loss from the spike, based upon both cylindrical and spherical spike models. In all reported cases, the energy lost from the spike via the heat radiation, although much different for different projectiles, is smaller than 1% of the ion deposited energy and its influence on the target temperature evolution lies within uncertainty of a typical ion current measurement. This work was carried out as a part of Research Project CPBP 01.09     

Secondary ion emission under the bombardment of Si by multiply charged Si q+ ions

The spectra of secondary ion emission under the bombardment of a B-doped Si target by multiply charged Si ^q+ ions (q = 1?C5) have been studied in the energy range of 1 to 10 keV per unit of charge. A multifold increase in the yield of secondary cluster Sk _n ⁺ ions, multiply charged Si ^q/+ ion (q = 1?C3), and H⁺, C⁺, B⁺, Si₂N⁺, Si₂O⁺ is observed as the charge of the multiply charged ions increases. The increase in the yield of secondary ions with increasing charge of the multiply charged-ion charge is most significant for ions with relatively high ionization potentials.     

Ion track effect on point defect production in SiC

Low-temperature (40 K) photoluminescence (PL) measurements were used to follow the defect formation induced in the 4H-SiC epitaxial layer by irradiation with 200 keV H⁺ and 800 keV C⁺ in the fluence range of 5×10⁹–3.5×10¹² ions/cm². After irradiation, the PL spectra show the formation of some sharp lines, called “alphabet lines”, located in the wavelength range of 425–443 nm, due to the recombination of excitons at structural defects induced by ion beams. The analysis of luminescence line intensity versus ion fluence allows us to mark two different groups of peaks, namely the P1 group (e, f and g lines) and the P2 group (a, b, c and d lines). The normalised yield of P1 group lines increases with ion fluence and reaches a maximum value, while the normalised yield of P2 group lines exhibits a threshold fluence and then increases until a saturation value is reached. These different trends indicate that, while the P1 group lines are related to the primary defects created by ion beams (interstitial defects, vacancies), the P2 group lines can be associated with some complex defects (divacancy, antisites). The trends are similar for irradiation with H⁺ and C⁺ ions; however, the defect formation occurs in the fluence range of 5×10⁹–10¹¹ ions/cm² for C⁺ irradiation and 10¹¹–4×10¹² ions/cm² for H⁺ irradiation. Taking into account the different values of energy deposited in elastic collision, a dependence on the ion type was found: the C⁺ ion results in being less effective in defect production as a higher defect recombination occurs inside its dense cascade.     

An improved radio frequency heavy ion source

Abstract

An improved r.f. heavy ion source, which can operate with gases, liquids and solids is described. The operating temperature of the ion source may reach 1000°C. It can therefore, generate ion beams of a considerable number of elements. including metallic ions. At present, ion beams of S⁺, Al⁺, As⁺. Zn⁺, Mg⁺, Cd⁺, Ag⁺, Sm⁺, Te⁺, Se⁺, Sn⁺, In⁺, Hg⁺, etc. have been extracted. The extracted total beam current ranges from several hundred microamperes to the order of milliampere. The useful fraction of ion in the total beam is 70–90%. Life span of the source ranges from 40 hours to more than 100 hours. The emittance of the source is 3 × 10^?6 cm rad. Structure and operating characteristics of this ion source are discussed.