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Photoelectron spectra of the valence bands of noble metals, europium chalcogenides, cuprous halides, transition metal halides and cadmium sulphide were measured in the exciting photon energy range 40–76 eV by the use of synchrotron radiation from a 1.3 GeV Tokyo Synchrotron. Overall energy resolution was about 0.4 eV. The results show that the radiation is very promising for high resolution photoelectron spectroscopy in XUV photon energy  相似文献   

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Photoemission normal to the (001) face of W was measured using polarized synchrotron radiation at normal incidence for 10 eV ?hv? 30 eV. All the major features observed agree very well with the predictions of three-dimensional, bulk band calculations for direct transitions along the line Δ, even for final energies well above EF. No surface resonances were observed with s-polarized radiation.  相似文献   

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The initial growth of Cu on polycrystalline manganese at room temperature has been investigated by Auger Spectroscopy and UV-synchrotron radiation photoemission spectroscopy, for copper coverages ranging from 1 to 18 Å. By monitoring the changes of the Cu3d level, a strong intermixing at the interface has been observed. The simultaneous growth of a copper phase which is lying on top of the intermixed region has also been detected. Analysis of the Auger data indicates that copper is most probably growing in a layer-by-layer mode, with a simultaneous diffusion into the substrate. Calculations for a layer-by-layer growth model are compared with the experimental data. They support our analysis.  相似文献   

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The silicon pixel sensor(SPS) is one of the key components of hybrid pixel single-photon-counting detectors for synchrotron radiation X-ray detection(SRD). In this paper, the design, fabrication, and characterization of SPSs for single beam X-ray photon detection is reported. The designed pixel sensor is a p+-in-n structure with guard-ring structures operated in full-depletion mode and is fabricated on 4-inch, N type, 320 μm thick, high-resistivity silicon wafers by a general Si planar process. To achieve high energy resolution of X-rays and obtain low dark current and high breakdown voltage as well as appropriate depletion voltage of the SPS, a series of technical optimizations of device structure and fabrication process are explored. With optimized device structure and fabrication process,excellent SPS characteristics with dark current of 2 n A/cm~2, full depletion voltage 50 V and breakdown voltage 150 V are achieved. The fabricated SPSs are wire bonded to ASIC circuits and tested for the performance of X-ray response to the 1W2 B synchrotron beam line of the Beijing Synchrotron Radiation Facility. The measured S-curves for SRD demonstrate a high discrimination for different energy X-rays. The extracted energy resolution is high( 20% for X-ray photon energy 10 keV) and the linear properties between input photo energy and the equivalent generator amplitude are well established. It confirmed that the fabricated SPSs have a good energy linearity and high count rate with the optimized technologies. The technology is expected to have a promising application in the development of a large scale SRD system for the Beijing Advanced Photon Source.  相似文献   

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Infrared (IR) spectroscopy of chemisorbed C60 on Ag (111), Au (110) and Cu (100) reveals that a non-IR-active mode becomes active upon adsorption, and that its frequency shifts proportionally with the charge transferred from the metal to the molecule by about 5 cm-1 per electron. The temperature dependence of the frequency and the width of this IR feature have also been followed for C60/Cu (100) and were found to agree well with a weak anharmonic coupling (dephasing) to a low-frequency mode, which we suggest to be the frustrated translational mode of the adsorbed molecules. Additionally, the adsorption is accompanied by a broadband reflectance change, which is interpreted as due to the scattering of conduction electrons of the metal surface by the adsorbate. The reflectance change allows determination of the friction coefficient of the C60 molecules, which results in rather small values (∼2×109 s-1 for Ag and Au, and ∼1.6×109 s-1for Cu), consistent with a marked metallic character of the adsorbed molecules. Pre-dosing of alkali atoms onto the metal substrates drastically changes the IR spectra recorded during subsequent C60 deposition: anti-absorption bands, as well as an increase of the broadband reflectance, occur and are interpreted as due to strong electron–phonon coupling with induced surface states. Received: 6 June 2001 / Accepted: 23 October 2001 / Published online: 3 April 2002  相似文献   

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In situ X-ray diffractometry with synchrotron radiation (SR) is used to study structural transformations in thin films of calcium-phosphate on the surfaces of medical implants made from alumina ceramics and oxidized titanium. The temperature limits of crystallization and structural composition of films on various substrates are found.  相似文献   

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W4f, Na2p photoelectron spectra and valence band spectra are reported for a series of cubic metallic NaxWO3 (0.4 < x < 0.85) bronzes in the 20–130 eV photon energy range. From a comparison of experimental and theoretical conduction band densities of states it is found that in the measured composition range the trends of the rigid band model behavior are respected.  相似文献   

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Droplets with colloidal biological suspensions evaporating on substrates with defined wetting properties generate confined environments for initiating aggregation and self-assembly processes. We describe smart micro- and nanostructured surfaces, optimized for probing single droplets and residues by synchrotron radiation micro- and nanobeam diffraction techniques. Applications are presented for Ac-IVD and β-amyloid (1–42) peptides capable of forming cross-β sheet structures. Complementary synchrotron radiation FTIR microspectroscopy addresses secondary structure formation. The high synchrotron radiation source brilliance enables fast raster-scan experiments.  相似文献   

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Submonolayers of C60 molecules have been deposited on different carbon substrates (pristine HOPG, argon-ion irradiated HOPG and amorphous carbon) and investigated by means of Ultraviolet Photoelectron Spectroscopy. The desorption behavior and spectral changes in the valence band were examined as a function of the sample temperature. Strong fullerene-substrate interaction (chemisorption) was observed on defect-rich surfaces (irradiated HOPG, a-C), indicated by binding energy shifts and broadening of C60 VB features. These chemisorbed species proved to be more resistant against temperature-induced desorption than usually observed for physisorbed molecules on pristine HOPG. The results presented here suggest that deposition of fullerenes on heated substrates might be a feasible method of surface nanostructuring by preferential chemisorption on defects.  相似文献   

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A model of rapid thermal oxidation of silicon in dry oxygen based on the reaction of volume oxidation is constructed. It is assumed that the coefficient of oxygen diffusion for silicon dioxide decreases because of internal compressive stress, which is at a maximum near the SiO2-Si interface; as the distance from the interface increases, this stress decreases according to the time-dependent exponential law because of viscoelastic relaxation from the value of the diffusion coefficient for strained oxide to that for fused quartz. The characteristic relaxation time of the coefficient of oxygen diffusion in silicon dioxide correlates with the relaxation time of internal stress in silicon dioxide films on silicon and with the relaxation time of the refraction index. Because the refraction index is related to the density of silicon dioxide, we arrive at the conclusion that the relaxation of the diffusion coefficient is related not only to the relaxation of internal mechanical stress, but also to the relaxation of the density of silicon dioxide.  相似文献   

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Functionalization of materials and laser patterning of chemisorbed layers play an increasing role in tailoring and structuring surface properties on the nanoscale. An attractive method of investigating organic functionalizations is laser-induced thermal desorption (LITD). The analysis of well-defined H- and D-terminated Si(1 1 1)-(1 × 1):H(D) surfaces was used to quantify the LITD technique. Moreover, oxidized silicon surfaces were functionalized with trimethylsilyl (TMS) and (3,3,3-trifluoropropyl)-dimethylsilyl (TFP) hydrophobic end groups. The samples were irradiated normal to the surface with focused XeCl laser pulses. The desorbed species were monitored at an oblique angle and their time-of-flight (TOF) distributions were measured with a quadrupole mass analyzer. The TOF temperatures of silicon were calibrated for different laser pulse energies by desorption of H2 and D2. In the LITD experiments, the desorption of trimethylsilanol groups was observed for TMS terminations, indicating that essentially the whole molecule desorbs from the surface. The TOF data could be fitted to Maxwellian distributions, providing the desorption yield of the emitted species, their mass, and temperature. On the other hand, several characteristic fragments were found for the TFP-terminated surface. The TOF distributions indicate that the fragments detected with the analyzer derived from different desorbed species.  相似文献   

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PbAl_3(PO_4)_2(OH,H_2O)_6,an important environmental mineral,is in-situ studied by synchrotron x-ray diffraction(XRD)and Raman scattering combined with diamond anvil cells(DACs)at pressures up to~11.0 GPa and room temperature.The XRD results indicate that plumbogummite does not undergo a phase transition between 0 GPa and 10.9 GPa.Moreover,the c axis is more compressible than the a axis,revealing its anisotropic behavior.The pressure-volume data are fitted to the third-order Birch-Murnaghan equation of state to yield the plumbogummite bulk modulus K_0 of 68(1)GPa and K'_0 of 6.1.The [PO_4]~(3-)and [HPO_4]~(2-) Raman vibrational modes exhibit scale nearly linearly as a function of pressure.The [PO4]~(3-) stretching modes are generally more sensitive to pressure than the bending modes.The Grüneisen parameters range from -0.07 to 1.19,with an arithmetic mean of approximately 0.39.  相似文献   

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