首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 608 毫秒
1.
Interstitial manganese in silicon can exist in four charge states which imply single acceptor and double donor behaviour. The corresponding level scheme with the acceptor level (Mn?0) at Ec-0.13eV, the first donor level (Mn0+) at Ec?0.45eV and the second donor level (Mn+/++) at Ev+0.30eV is established through EPR-controlled Hall measurements. Another deep donor level at Ec?0.54eV is produced by the donor acceptor pair (MnB) whereas a more shallow one around Ec-0.28eV was already attributed to a Mn4-cluster.  相似文献   

2.
α-spectrometry using Si(Au) detectors has been performed with thin samples of 237Np; αγ bi-parametric coincidences have permitted an analysis and unfolding of the spectrum and give data about the level scheme. Direct and α-coincident γ-spectra have been measured using Ge(Li) and Si(Li) detectors, obtaining the characteristic electromagnetic transitions in 233Pa. Nine new γ-transitions are found, relative to the most recent compilation made by Ellis. In the level scheme, the existence of a level at 306.1 keV is confirmed. A level at 257.1 keV, previously suggested, is evidenced. The level at 300.5 keV is proposed as the 72? component of the 52(523) band, hence proposing the 306.1 keV level as the 72+ term of the 52(642) band.  相似文献   

3.
The 52S12 ground state of Cd+ ions has been oriented by Schearer's technique. The hyperfine structure constant for this level has been determined as ¦A¦ = 14700 ± 700 MHz for the odd isotopes 111 and 113.  相似文献   

4.
Transient field precession measurements have been performed on the first excited Jπ = 2+ states of 28Si and 30Si with the IMPAC technique on recoil in magnetized iron. The results were analyzed with empirically adjusted Lindhard-Winther predictions. This yields g-factors of g = +0.56 ± 0.09 and g = +0.56 ± 0.16 for28Si and 30Si, respectively. In the present cases the influence of static hyperfine fields is negligible due to the very short mean lives for 28Si and 30Si of 0.68 and 0.35 ps, respectively. The results are compared with theoretical calculations. Previous results for 26Mg(21+) were reanalyzed with the more recent lifetime of τm = 0.72 ± 0.03 ps. The value of the g-factor becomes g = +0.82 ± 0.16.  相似文献   

5.
A new EPR spectrum has been observed in semi-insulating GaAs with a submillimeter laser magnetic resonance spectrometer. The spectrum is isotropic with g = 2.04 ± 0.01 at υ? = 11.236 cm-I. The hyperfine interaction parameter | A | ([ = 32) is 0.090 ± 0.001 cm-1. The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP.  相似文献   

6.
A centre, characterised by an isotropie singlet at g = 2.000 and satellite lines having the correct relative intensity for 29Si hyperfine features, has been detected in natural diamond. The form of the 29Si hyperfine tensor suggests that the electronic structure of this silicon centre is similar to that of the common nitrogen centre. Although silicon is an expected impurity in diamond, paramagnetic centres containing it have not previously been reported. We have also detected the paramagnetic nitrogen centre previously reported, characterised by a hyperfine triplet with A6(14N) = 7.5G and A(14N) = 5.0 G. This centre was accompanied by the common nitrogen centre in only one case. Other naturally occurring centres, apparently comprising two weakly coupled electrons in triplet states, were too poorly defined to characterise fully.  相似文献   

7.
High resolution laser spectroscopy coupled to a sensitive method of detection via mass analysis of He+2 ions produced in He(5 3P) + He(1 1S) collisions, is used to obtain the fine and hyperfine spectra of the ultra-violet He 2 3S → 5 3P transition. A cw tunable UV radiation around 294.5 nm is generated by intracavity frequency doubling a Rhodamine 6G single mode ring dye laser using an ADA crystal. Both spectra enable fine and hyperfine structures to be determined within a few MHz. The magnetic dipole coupling constant A of the 5 3P term of 3He is found to be -4326 ± 9 MHz (-0.1443 ± 0.0003 cm-1).  相似文献   

8.
Angle-resolved ultraviolet photoelectron spectra have been measured for well defined Ag/Si(111) submonolayer interfaces of (1) Si(111)(3 × 3)R30°-Ag, (2) “Si(111)(6 × 1)-Ag”, and (3) Ag/Si(111) as deposited at room temperature. Non-dispersive and very narrow (FWHM ~ 0.4–0.5 eV) Ag 4d derived peaks are found at 5.6 and 6.5 eV below the Fermi level for surface (1) and at 5.3 and 6.0 eV for surface (2). Dispersions of sp “binding” states in the energy range between EF and Ag 4d states have been precisely determined for surface (1). Electronic structures similar to those of the Ag(111) surface, including the surface state near EF, have been observed for surface (3).  相似文献   

9.
The six lowest states, dissociating into the (2P)Al(4S)N and (2P)Al(2D)N atomic states, are calculated using a nonempirical pseudopotential for the representation of the atomic cores and an extensive CI. The ground state is assigned as 3Π, but the 1Σ+ and 3Σ? minima are less than 0.5 eV higher. The results are compared with the few experimental data.  相似文献   

10.
The hyperfine structure of the level N = 37, J = 3812 in the C4Σ?, v = 0 state of VO is anomalous as a result of an electronic perturbation. Because of the high nuclear spin of 51V (I = 72), the hyperfine pattern has a sufficient number of lines that it can be analyzed in detail just as if it were a rotational branch fragment containing an avoided crossing. It is shown how the coefficient of F(F + 1) in the hyperfine energy expression for the perturbing state and the perturbation matrix element can be obtained very accurately, though because the nature of the perturbing state is unknown it has not been possible to interpret the coefficient in terms of conventional hyperfine parameters in this case. The conditions for the appearance of perturbations of this type and the results to be obtained from them are discussed.  相似文献   

11.
(Dimethyldiphenylphosphonium)+(7,7,8,8-tetracyanoquinodimethanide)?2 is monoclinic, space group Cc, with a = 32.01(2), b = 6.56(1), c = 15.72(2)A?, β = 107.4(8)°. The TCNQ's stack plane-to-plane in columns parallel to b with (i) a mean interplanar spacing of 3.28 Å along the conducting chains and (ii) an exocyclic bond to quinonoid ring overlap of adjacent molecules. The conductivity along b, the needle axis, varies as σ = σ0exp (?EakT) where σ300 K = 0.05 S cm?1 and Ea = 0.20 eV (Diethyldiphenylphosphonium)+(7,7,8,8-tetracyanoquinodimethanide)?2 is similarly monoclinic, space group Cc, with a = 31.48(2), b = 6.51(1), c = 15.48(2) A?, β = 104.2(8)°. The conductivity at 300 K and activation energy, both determined along b, are 1–10 S cm?1 and 0.05 eV respectively. There is evidence of a lattice distortion in the dimethyl analogue only.  相似文献   

12.
Hydrogenated amorphous silicon surfaces, atomically clean and subsequently oxidized to up to 20 Å oxide thickness, were studied using AES and UPS. The oxidation was made in O2 in the pressure range 10?9 Torr to 5 atm and at 23 and 300°C. The oxidation rate at 23°C was found to be the same as that of crystalline silicon while at 300°C it was appreciably faster. Changes in the d N(E)dE AES Si LVV line shape near 80 eV upon oxidation could be correlated to changes in the silicon-oxygen bonding level observed in UPS. The detailed line shape of the AES Si LVV transition indicates that at 300°C a more homogeneous oxide is produced than at 23°C.  相似文献   

13.
Low energy electron diffraction (LEED), Auger electron spectroscopy (AES) and photoemission yield spectroscopy (PYS) measurements have been performed on a set of ultrahigh vacuum cleaved Si(111) surfaces with different bulk dopings as a function of Ga or In coverage θ. The metal layers are obtained by evaporation on the unheated substrate and θ varies from zero to several monolayers (ML). First, the 2×1 reconstruction of the clean substrate is replaced by a 3×3 R30° structure at 13 ML, meanwhile the dangling bond peak at 0.6 eV below the valence band edge Evs is replaced by a peak at 0.1 eV for Ga or 0.3 eV for In, below Evs. At the same time, the ionization energy decreases by 0.4 eV (Ga) or 0.6 eV (In), while the Fermi level pinning position gets closer to the valence band edge by about 0.1eV. Upon increasing θ, new LEED structures develop and the electronic properties keep on changing slightly before metallic islands start to grow beyond θ ~1 ML.  相似文献   

14.
E. Hagn  E. Zech 《Nuclear Physics A》1982,373(2):256-266
The magnetic hyperfine splitting vM=|gμNBHF/h| of 196mAu (jπ=12?; configuration ¦(π112(v132+)〉12?; T12 = 9.7 h) as dilute impurity in Ni has been determined with nuclear magnetic resonance on oriented nuclei as 96.0(2) MHz. With the known hyperfine field BHF = ?264.4(3.9) kG corrected for hyperfine anomalies the g-factor and magnetic moment of 196mAu are deduced to be |g| = 0.476(7) and |μ| = 5.72(8) μN. Taking into account the known magnetic properties of π12? and v132+ isomeric states in the neighbouring odd Pt, Au and Hg nuclei the structure of the 12? state is discussed.  相似文献   

15.
Energies and intensities of pionic and muonic X-rays in liquid 4He have been measured with a Si (Li) detector. The energy shift due to strong interaction effects of the pionic 1s level in 4He was determined to be ?75.7±2.0 eV. The natural line width of this level is 45±3 eV. These values are compared with different theoretical predictions. Cascade calculations, including external Auger effect and sliding transitions, have been performed to reproduce the yields of the muonic and pionic transitions. The pionic 2p level width is deduced: Γ2p = (1.1 ± 0.5) × 1012sec?1= (7.2±3.3) × 10?4eV.  相似文献   

16.
The hyperfine structure of the Γ6 electronic level in the cubic compound Cs2NaYbCl6 has been observed from the Mössbauer studies of 170Yb. The effective hyperfine coupling constant is found to be -10.9±0.1 mmsec.  相似文献   

17.
The energy levels of 97Ru have been studied through the decay of 31.1 min 97gRh and 44.3 min 97mRh using Ge(Li), Si(Li), Nal, plastic and anthracene detectors in singles and in coincidence experiments. A total of 139 γ-rays were observed. Ninety-eight γ-rays have been placed into the decay schemes involving 38 excited levels in 97Ru. The level energy of 97mRh was determined to be 258.6 keV. The spin and parity of 97gRh and 97mRh are assigned as 92+and12?, respectively. The fraction of decay of the isomer by the isomeric transition was measured with the Si(Li) detector, and αk values were determined for strong transitions. The half-life of the 188.6 keV, 32+ state in 97Ru was determined as 0.23 ± 0.02 ns by delayed e-γ coincidence measurements. The nuclear structure of low-lying levels is compared with similar levels in other odd-mass nuclei (N = 53) isotones and Ru isotopes).  相似文献   

18.
E.W. Weber 《Physics Reports》1977,32(3):123-167
Radiofrequency spectroscopy has been extended to positive ions with S ground states by means of optical pumping. The ions are stored in buffer gases or ion traps and are polarized directly by optical pumping or indirectly by spin exchange, change exchange, or Penning ionization with optically pumped atoms. The applied methods are described. The experiments can be divided into two categories:Collisional interactions of the polarized ions are investigated, like the exchange processes mentioned above, spin exchange with free electrons, spin depolarization and hyperfine density shifts in rare gases. For the two latter effects drastic differences are observed between atomic and ionic 2S12 states the explanations of which reveal the influence of the ionic charge on the interactions. The comparison of equivalent processes involving isoelectronic 2S or 2P configurations of atoms and ions provides a test of current collision theories.Precision rf spectroscopy of ionic ground states yields the 2S12 hyperfine structure splittings of 3He+ and group II ions with relative accuracies of up to 10?9, with further improvement possible. Direct and indirect optical pumping of 1S0 ions is used to determine nuclear magnetic moments, diamagnetic shielding coefficients, and chemical shifts. Applications and further developments of the present methods are discussed.  相似文献   

19.
Distributions of cross sections and analysing powers have been measured over the range ~ 14°–100° c.m. for the (3H, 3He), (3H, 4He), (3H, 2H) reactions at 33.4 MeV incident e using a ~ 95 % enriched 30Si target. Phenomenological optical-model analyses of the elastic-scattering data have been carried out. A DWBA analysis of the inelastic-scattering data for the 2.24 MeV (2+) and 5.49 MeV (3?) states of 30Si has yielded values of the deformation β2 and β3. The j-dependence of the analysing powers for the (3He, 4He) and (3He, 2H) reactions has identified the 6.71 MeV level of 29Si as a 52+ state, and a level near 9.5 MeV in 31P as a possible 72? state. Spectroscopic factors for ten states in 29Si and seven states in 31P have been deduced and are compared with other work. The extent to which the data defines the 3He spin-orbit potential is discussed.  相似文献   

20.
EPR studies of Mn2+ in ferroelectric lithium ammonium tartarate monohydrate (LAT) show that there are four Mn2+ complexes, which group themselves into two chemically different sets each containing two physically related sites at room temperature. It is inferred that Mn2+ enters into NH4+ site. The hyperfine separation of the central group (12 → ? 12) is found to be constant, which is not observed usually. It is suggested that the space group of LAT below Tc is P21.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号