Energy spectrum of holes in Sb<Subscript>2</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution according to the data on the transfer phenomena

The temperature dependence of the Hall coefficient of a single crystal of the p-Sb₂Te_2.9Se_0.1 solid solution grown by the Czochralski technique is studied in the temperature range 77–450 K. The data on the Hall coefficient of the p-Sb₂Te_2.9Se_0.1 are analyzed in combination with the data on the Seebeck and Nernst–Ettingshausen effects and the electrical conductivity with allowance for interband scattering. From an analysis of the temperature dependences of the four kinetic coefficients, it follows that, at T < 200 K, the experimental data are qualitatively and quantitatively described in terms of the one-band model. At higher temperatures, a complex structure of the valence band and the participation of the second-kind additional carriers (heavy holes) in the kinetic phenomena should be taken into account. It is shown that the calculations of the temperature dependences of the Seebeck and Hall coefficients performed in the two-band model agree with the experimental data with inclusion of the interband scattering when using the following parameters: effective masses of the density of states of light holes m_d1^*≈ 0.5m₀ (m₀ is the free electron mass) and heavy holes m_d2^*≈ 1.4m₀, the energy gap between the main and the additional extremes of the valence band ΔE_v ≈ 0.14 eV that is weakly dependent on temperature.     

Intrinsic superconducting transport properties of ultra-thin Fe<Subscript>1+<Emphasis Type="Italic">y</Emphasis></Subscript>Te<Subscript>0.6</Subscript>Se<Subscript>0.4</Subscript> microbridges

We investigated the superconducting properties of Fe_1+y Te_0.6Se_0.4 single-crystalline microbridges with a width of 4 μm and thicknesses ranging from 20.8 to 136.2 nm. The temperature-dependent in-plane resistance of the bridges exhibited a type of metal-insulator transition in the normal state. The critical current density (J _c) of the microbridge with a thickness of 136.2 nm was 82.3 kA/cm² at 3K and reached 105 kA/cm² after extrapolation to T = 0 K. The current versus voltage characteristics of the microbridges showed a Josephson-like behavior with an obvious hysteresis. These results demonstrate the potential application of ultra-thin Fe-based microbridges in superconducting electronic devices such as bolometric detectors.     

Conduction through localized states in a single crystal of the TlGa<Subscript>0.5</Subscript>Fe<Subscript>0.5</Subscript>Se<Subscript>2</Subscript> alloy

Layered single crystals of the TlGa_0.5Fe_0.5Se₂ alloy in a dc electric field at temperatures ranging from 128 to 178 K are found to possess variable-range-hopping conduction along natural crystal layers through states localized in the vicinity of the Fermi level. The parameters characterizing the electrical conduction in the TlGa_0.5Fe_0.5Se₂ crystals are estimated as follows: the density of states near the Fermi level N_F = 2.8 × 10¹⁷ eV^?1 cm^?3, the spread in energy of these states ΔE = 0.13 eV, the average hopping length R_av = 233 Å, and the concentration of deep-lying traps N _t = 3.6 × 10¹⁶ cm^?3.     

Relaxation phenomena in TlGa<Subscript>0.99</Subscript>Fe<Subscript>0.01</Subscript>Se<Subscript>2</Subscript> single crystals

The relaxation electronic phenomena occurring in TlGa_0.99Fe_0.01Se₂ single crystals in an external dc electric field are investigated. It is established that these phenomena are caused by electric charges accumulated in the single crystals. The charge relaxation at different electric field strengths and temperatures, the hysteresis of the current-voltage characteristic, and the electric charge accumulated in the TlGa_0.99Fe_0.01Se₂ single crystals are consistent with the relay-race mechanism of transfer of a charge generated at deep-lying energy levels in the band gap due to the injection of charge carriers from the electric contact into the crystal. The parameters characterizing the electronic phenomena observed in the TlGa_0.99Fe_0.01Se₂ single crystals are determined to be as follows: the effective mobility of charge carriers transferred by deep-lying centers μ_f=5.6×10^?2 cm²/(V s) at 300 K and the activation energy of charge transfer ΔE=0.54 eV, the contact capacitance of the sample C _c =5×10^?8 F, the localization length of charge carriers in the crystal d _c =1.17×10^?6 cm, the electric charge time constant of the contact τ=15 s, the time a charge carrier takes to travel through the sample t _t =1.8×10^?3 s, and the activation energy of traps responsible for charge relaxation ΔE _σ = ΔE _Q = 0.58 eV.     

Electrical switching studies on As<Subscript>40</Subscript>Te<Subscript>60-x</Subscript>Se<Subscript>x</Subscript> and As<Subscript>35</Subscript>Te<Subscript>65-x</Subscript>Se<Subscript>x</Subscript> glasses

The I–V characteristics of bulk As₄₀Te_60-xSe_x and As₃₅Te_65-xSe_x glasses have been studied with a current sweep of 0–18 mA-0, over a wide range of compositions (4≤x≤22). All the glasses studied showed a threshold electrical switching behaviour. The number of switching cycles withstood by the samples has been found to depend on the ON-state current. It is seen that the switching voltages increase with increase in selenium content. Further, the switching voltages are found to be almost independent of the thickness of the sample (d), in the range 0.18–0.3 mm. Also, the switching voltages and the number of switching cycles withstood by the samples are found to decrease with temperature. Received: 6 November 2002 / Accepted: 8 November 2002 / Published online: 29 January 2003 RID="*" ID="*"Corresponding author. Fax: +91-80/360-0135, E-mail: sasokan@isu.iisc.ernet.in     

Effect of heat treatment on the structure and the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> thin films and composites based on them

This work considers the effect of vacuum annealing on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 thin film and Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites with various carbon contents produced by ion-beam deposition in an argon atmosphere. The electrical resistivity and the thermopower of Sb_0.9Bi_1.1Te_2.9Se_0.1–C nanocomposites are found to be dependent on not only the carbon concentration but also the type and the concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution, which determine the type of conductivity of Sb_0.9Bi_1.1Te_2.9Se_0.1 granules. The power factors are estimated for films of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution and films of Sb_0.9Bi_1.1Te_2.9Se_0.1–C composites and found to have values comparable with the values for nanostructured materials on the basis of (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Magnetic Resonance Study of the Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> Doped with Manganese

Crystals of 3D topological insulators, bismuth telluride Bi₂Te₃, doped with manganese were studied using electron spin resonance (ESR) spectroscopy together with the SQUID magnetometry, transport measurements, and X-ray characterization. The obtained ESR data, such as the temperature and the angular dependence of the resonance field, reveal the specific critical behavior and confirm the ferromagnetic ordering of Mn spins even at modest doping. In addition to the studies of the critical behavior of diluted ferromagnet Bi_2?x Mn _x Te_3, we also discuss the effects of the limited solubility of Mn ions giving rise to microscopic inclusions of the spurious magnetic phases which were revealed using ESR technique.     

Colossal magnetoresistance of the inhomogeneous ferromagnetic semiconductor HgCr<Subscript>2</Subscript>Se<Subscript>4</Subscript>

A new method is described for attaining high magnetoresistance in inhomogeneous magnetic materials, which makes use of the formation of a depleted layer and a contact potential difference at the interface separating two semiconductors with different Fermi levels and the magnetic-field-induced variation in the contact potential difference and thickness of the interface layer. The proposed model of the magnetoresistive structure is realized on the basis of the HgCr₂Se₄ magnetic semiconductor. Layers of n-HgCr₂Se₄ up to a few tens of microns thick were prepared on the surface of p-HgCr₂Se₄ bulk single crystals by the diffusion technique. Application of a magnetic field stimulated in the structures a strong (by a factor of more than 200) increase of the current flowing through the n-layer.     

Specific features of the electronic,spin, and atomic structures of a topological insulator Bi<Subscript>2</Subscript>Te<Subscript>2.4</Subscript>Se<Subscript>0.6</Subscript>

The specific features of the electronic and spin structures of a triple topological insulator Bi₂Te_2.4Se_0.6, which is characterized by high-efficiency thermoelectric properties, have been studied with the use of angular- and spin-resolved photoelectron spectroscopy and compared with theoretical calculations in the framework of the density functional theory. It has been shown that the Fermi level for Bi₂Te_2.4Se_0.6 falls outside the band gap and traverses the topological surface state (the Dirac cone). Theoretical calculations of the electronic structure of the surface have demonstrated that the character of distribution of Se atoms on the Te–Se sublattice practically does not influence the dispersion of the surface topological electronic state. The spin structure of this state is characterized by helical spin polarization. Analysis of the Bi₂Te_2.4Se_0.6 surface by scanning tunnel microscopy has revealed atomic smoothness of the surface of a sample cleaved in an ultrahigh vacuum, with a lattice constant of ~4.23 Å. Stability of the Dirac cone of the Bi₂Te_2.4Se_0.6 compound to deposition of a Pt monolayer on the surface is shown.     

Physical properties of FeSe<Subscript>0.5</Subscript>Te<Subscript>0.5</Subscript> single crystals grown under different conditions

We report on structural, magnetic, conductivity, and thermodynamic studies of FeSe_0.5Te_0.5 single crystals grown by self-flux and Bridgman methods. The lowest values of the susceptibility in thenormal state, the highest transition temperature T _c of 14.4 K, and the largest heat-capacity anomaly at T _c were obtained for pure (oxygen-free) samples. The criticalcurrent density j _c of 8.6 × 10⁴A/cm² (at 2 K) achieved in pure samples is attributed to intrinsic inhomogeneity due to disorder at the anion sites. The samples containing an impurity phase of Fe₃O₄ show increased j _c up to2.3 × 10⁵A/cm² due to additional pinning centers. The upper critical field\(H_{c2}\)of ~500 kOe is estimated from the resistivity studyin magnetic fields parallel to the c-axis using a criterion of a 50%drop of the normal state resistivity R _n . The anisotropy ofthe upper critical fieldγ _{H c2} =H ^ab _c2/H _c2 ^c reaches a value ~6 at\(T\longrightarrow T_c\). Extremely low values of the residualSommerfeld coefficient \(\gamma_r\) of about 1 mJ/mol K²,compared to the normal state Sommerfeld coefficient γ _n = 25mJ/mol K² for pure samples indicate a high volume fraction of thesuperconducting phase (up to 97%). The electronic contribution to the specific heat in thesuperconducting state is well described within a single-band BCS model with a temperature dependent gapΔ(0 K) = 27(1) K. A broad cusp-like anomaly in the electronic specific heat observed at low temperatures in samples with suppressed bulk superconductivity is ascribed to a splitting of the ground state of the Fe²⁺ ions at the 2c sites. This contribution is fully suppressed in the ordered state in samples with bulk superconductivity.     

Effect of thermal treatment on the thermoelectric properties of Sb<Subscript>0.9</Subscript>Bi<Subscript>1.1</Subscript>Te<Subscript>2.9</Subscript>Se<Subscript>0.1</Subscript> solid solution thin films

The effect thermal treatment in a vacuum has on the thermoelectric properties of Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution thin films obtained via ion-beam sputtering in an argon atmosphere is considered. It is established that the specific resistance and thermopower are determined by the type and concentration of intrinsic point defects of the Sb_0.9Bi_1.1Te_2.9Se_0.1 solid solution. The power factor values are found to be comparable to those of nanostructured materials based on (Bi,Sb)₂(Te,Se)₃ solid solutions.     

Electrophysical parameters of <Emphasis Type="Italic">c</Emphasis>-oriented Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> films with a low concentration of antistructural defects

Epitaxial c-oriented Bi₂Te₃ films 1.2 μm in thickness are grown by the hot wall method for a low supersaturation of the vapor phase over the surface of mica substrates. The hexagonal unit cell parameters a = 4.386 Å and c = 30.452 Å of the grown films almost coincide with the corresponding parameters of stoichiometric bulk Bi₂Te₃ crystals. At T = 100 K, the Hall concentration of electrons in the films is on the order of 8 × 10¹⁸ cm^?3, while the highest values of the thermoelectric coefficient (α ≈ 280 μV K^?1) are observed at temperatures on the order of 260 K. Under impurity conduction conditions, conductivity σ of the films increases upon cooling in inverse proportion to the squared temperature. In the temperature range 100–200 K, thermoelectric power parameter α²σ of Bi₂Te₃ films has values of 80–90 μW cm^?1 K^?2.     

Effect of charge carriers on the magnetic properties of the CdCr<Subscript>2</Subscript>Se<Subscript>4</Subscript> ferromagnetic semiconductor

The results of an investigation into how the composition of annealing mixtures influences the Curie temperature of single crystals of the CdCr₂Se₄ ferromagnetic semiconductor are reported. The mechanism of doping of single crystals is analyzed, and the role played by each of the components of the annealing batch is established. It is concluded that the indirect exchange involving n-type carriers near impurity gallium ions leads to a sharp increase in the phase transition temperature (from 130 to 172 K) of the samples. The dependences of the magnetization of samples with different phase transition temperatures on the temperature and magnetic field are compared.     

The structural,electronic and optical properties of CuGa (Se<Subscript>x</Subscript>S<Subscript>1-x</Subscript>)<Subscript>2</Subscript> compounds from first-principle calculations

The structural, electronic and optical properties of theCuGa (Se _x S_1-x )₂alloy system have been performed systematic within generalized gradient approximation(GGA) of Perdew-Burke-Ernzerhof (PBE) implemented in the Cambridge serial total energypackage (CASTEP) code. We calculate the lattice parameters and axial ratio, which agreewith the experimental values quite well. The anion position parameters uare also predicted using the model of Abrahams and Bernstein and the results seem to betrustworthy as compared to the experimental and theoretical values. The total and partdensity of states are discussed which follow the common rule of the conventionalsemiconductors. The static dielectric tenser and refractive index are summarized comparedwith available experimental and theoretical values. Also the spectra of the dielectricfunctions, refractive index, reflectance, absorption coefficient and real parts ofphotoconductivity are discussed in details.     

On the hole scattering anisotropy in the PbSb<Subscript>2</Subscript>Te<Subscript>4</Subscript> layered compound from data on the Nernst-Ettingshausen coefficient

Three independent components of the Nernst-Ettingshausen coefficient tensor Q _ikl are experimentally measured for an anisotropic single crystal of the p-PbSb₂Te₄ layered compound. The components Q ₁₂₃ and Q ₁₃₂ are found to be negative, whereas the component Q ₃₂₁ is positive. The experimental data on the anisotropy of the Nernst-Ettingshausen coefficient are discussed together with the available data on the thermopower, the Hall effect, and the electrical conductivity. The analysis demonstrates that the experimental data on the transport effects in p-PbSb₂Te₄ can be explained within a one-band model of the band spectrum and a mixed mechanism of hole scattering under the assumption that scattering from acoustic phonons and scattering from impurity ions are dominant in the cleavage plane and along the c ₃ trigonal axis, respectively.     

Superconductivity with two-fold symmetry in topological superconductor Sr<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript>

Topological superconductivity is the quantum condensate of paired electrons with an odd parity of the pairing function. By using a Corbino-shape like electrode configuration, we measure the c-axis resistivity of the recently discovered superconductor Sr _x Bi₂Se₃ with the magnetic field rotating within the basal planes, and find clear evidence of two-fold superconductivity. The Laue diffraction measurements on these samples show that the maximum gap direction is either parallel or perpendicular to the main crystallographic axis. This observation is consistent with the theoretical prediction and strongly suggests that Sr _x Bi₂Se₃ is a topological superconductor.     

Response of the capacitance and dielectric loss of the SrRuO<Subscript>3</Subscript>/SrTiO<Subscript>3</Subscript>/SrRuO<Subscript>3</Subscript> film heterostructures to variations in temperature and electric field

Three-layer epitaxial heterostructures with a 750-nm-thick intermediate strontium titanate layer between two strontium ruthenate conductive thin-film electrodes have been grown by laser deposition. Photolithography and ion etching have been used to form film parallel-plate capacitors based on the grown heterostructures. The capacitance (C) and dielectric loss tangent (tanδ) of the parallel-plate capacitors have been measured in the temperature range T = 4.2–300 K at an applied bias voltage of up to ±2.5 V and without it. At T > 100 K, the temperature dependence of the dielectric permittivity (ε) of the SrTiO₃ intermediate layer is well approximated by the Curie–Weiss law taking into account the capacitance induced by the penetration of an electric field into the oxide electrodes. At T ≈ 20 K, the dielectric permittivity ε of the SrTiO₃ intermediate layer decreases by approximately 20% in an electric field of 25 kV/cm. The dielectric loss tangent of the film capacitor heterostructures decreases monotonically with a decrease in the temperature in the range from 300 to 80 K and almost does not depend on the electric field strength. However, in the range from 80 to 4.2 K, the dielectric loss tangent increases nonmonotonically (abruptly) with a decrease in the temperature and decreases significantly in an applied electric field.     

Features of low-temperature thermal expansion of n-type Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> single crystals in magnetic field

Tensometric study of n-type Bi₂Se₃ single crystals in dc magnetic fields to 6 T in a temperature range of 7–23 K detected a weak negative thermal expansion (NTE) in the basal plane. The NTE increases with the field strength and depends on its orientation with respect to the trigonal c axis. In a magnetic field of 6 T, parallel to the c axis, the linear NTE coefficient reaches ?7 · 10^?7 K^?1, and a minimum sample length is reached at a temperature of 13 K, where a Hall carrier concentration maximum is also detected. The found magnetoelastic anomaly can be associated with the topological insulator state.     

Impact of Ultrathin Pb Films on the Topological Surface and Quantum-Well States of Bi<Subscript>2</Subscript>Se<Subscript>3</Subscript> and Sb<Subscript>2</Subscript>Te<Subscript>3</Subscript> Topological Insulators

The effect of an ultrathin Pb film deposited on the surface of Bi₂Se₃ and Sb₂Te₃ compounds on the electronic state structure of topological insulators is studied experimentally by the angle-resolved photoemission spectroscopy (ARPES) technique. The following features are revealed: formation of two-dimensional quantum-well states in the near-surface region, an increase in the binding energy of the Dirac cone and the core levels, and a simultaneous electronic states intensity redistribution in the system in photoemission spectra. The results obtained show that topological states may coexist at the interface between studied materials and a superconductor, which seems to be promising for application in quantum computers.     

Weak antilocalization in thin films of the Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.