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1.
Large-scale silicon isotope separation based on the IRMPD of natural Si2F6 has been carried out using a commercially available high power CO2 TEA laser and a flow reaction system. The decomposition product SiF4 containing 19–33% of 30Si was obtained at a production rate of 1.5×10–2–2.6×10–2 mol·h–1, depending on experimental parameters such as laser wavelength, laser fluence, pressure, and flow rate. SiF4 containing 12% of 29Si was obtained under slightly different conditions, i.e., at a shorter wavelength than that for 30Si. When 39% of Si2F6 was decomposed at a slow flow rate, residual Si2F6 was found to have 99.7% of 28Si. The production rate was 4.2×10–2 mol·h–1.  相似文献   

2.
The charge state dependence of positron lifetime and trapping at divacancy (V2) in Si doped with phosphorus or boron has been studied after 15 McV electron irradiation up to a fluence of 8.0×1017 e/cm2. The positron trapping cross sections for V 2 2– , V 2 and V 2 0 at 300 K were about 6×10–14, 3×10–14 and 0.1–3×10–14 cm2, respectively. For V 2 + , however, no positron trapping was observed. The marked difference in the cross sections comes from Coulomb interaction between the positron and the charged divacancy. The trapping rates for V 2 0 and V 2 2– have been found to increase with decreasing temperature in the temperature range of 10–300 K. These results are well interpreted by a two-stage trapping model having shallow levels with energy of 9 meV (V 2 0 ) and 21 meV (V 2 2– ). The appearance of a shallow level for V 2 0 can not be explained by a conventional Rydberg state model. The lifetime (290–300 ps) in V 2 0 is nearly constant in the temperature range from 10 to 300 K, while that in V 2 2– increases from 260 ps at 10 K to 320 ps at 300 K. The lifetime (260 ps) in V 2 2– is shorter than that in V 2 0 at low temperature, which is due to the excess electron density in V 2 2– . At high temperature, however, the longer lifetime of V 2 2– than that of V 2 0 is attributed to lattice relaxation around V 2 2– .  相似文献   

3.
Tritium isotope separation by CO2-laser induced multiphoton dissociation of CTF3 is investigated. For the optimization of the performance of this working substance, trifluoromethane, the conditions to yield high-selectivity at high-operating pressure and low-critical fluence for complete dissociation are studied using our deconvolution procedure. The irradiation conditions are varied over the following ranges; wavenumber: 1052–1087 cm–1, gas temperature: 25°C to –78°C, CHF3 pressure: 5–205 Torr. The selectivities exceeding 104 are observed for 85–205 Torr CHF3 at –78°C by the irradiation at 1057 cm–1.  相似文献   

4.
We examined the attenuation and dispersion of sound during phase transitions with an overdamped soft mode at low temperatures. The obtained temperature and frequency dependences differ from results known at the high-temperature asymptote. The temperature anomalies are sharper. At low frequencies, the attenuation behaves like (T – Tc)–5/2 for a critical phonon spectrum isotropic in k, and like (T–Tc)–2 for uniaxial ferroelectrics. The presence of a temperature anomaly is characteristic also for high-frequency attenuation, behaving like (T–Tc)–1/2 and ln(T–Tc)., respectively. We discuss briefly the results obtained from an experimental test.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 70–74, January, 1989.  相似文献   

5.
Results are reported for association with the anions Cl, Br, I, NO 3 , ClO 4 , GaCl 4 , and InBr 4 , as regards the IR absorption of free and bound N-H modes. The bound N-H mode is found to be characteristic of the anion and to be due to association of ion pairs joined via hydrogen bonds.  相似文献   

6.
Absorption spectra of the gases SiH4, NH3, C2H2 and of SiH4/Ar and SiH4/B2H6 mixtures have been measured in the spectral range of the CO2 laser from 9.2 to 10.8 µm. In agreement with literature, silane shows the highest absorption (absorption coefficient = 3.3 × 10–2 Pa–1 m–1). The deviation of the measured absorption behaviour of silane from literature, as far as the pressure dependence is concerned, can be explained by the enhanced spectral energy density in our experiment. This is confirmed by a rate-equation model involving the basic mechanisms of V-V and V-T energy transfer between vibrationally excited silane molecules. In contrast to silane, the absorption coefficient of NH3 at the 10P(20) laser line is 4.5 × 10–4 Pa–1 m–1 atp = 20 kPa and has its maximum of 4.5 × 10–3 Pa–1 m–1 at the 10R(6) laser line. For C2H2 and B2H6, is even less ( 2.1 Ò 10–5 Pa–1 m–1 for C2H2).  相似文献   

7.
We have investigated the luminescence of uranyl nitrate molecules on the surface of powdery SiO2 upon excitation by UV light (PhL) and hydrogen atoms (radical-recombination luminescence (RRL)). It has been found that the PhL and RRL spectra have a clearly defined vibrational structure. The luminescence peaks of the adsorbed UO2 2– ion are characterized by a systematic longwave shift from the same peaks of crystalline uranyl nitrate (by 230–430 cm–1 at 130 K). Moreover, in the adsorption centers the vibration frequencies of UO2 2– are 20–80 cm smaller than in crystalline salt and the RRL bands are 150–350 cm–1 (130 K) wider than the corresponding PhL bands.  相似文献   

8.
Ultraviolet emission spectra of the TiF radical in the 407 nm region have been observed at a resolution of 0.04 cm−1 using a Fourier transform spectrometer. A new electronic assignment of 4Γ–X4Φ has been proposed. Rotational analysis has been obtained for the 0–0 and 1–1 vibrational bands of the 4Γ5/2X4Φ3/2, 4Γ9/2X4Φ7/2, and 4Γ11/2X4Φ9/2 subbands and the 0–0 band of 4Γ7/2X4Φ5/2. The lower state rotational and centrifugal distortion constants are consistent with the previous results [J. Mol. Spectrosc. 184 (1997) 186; J. Chem. Phys. 119 (2003) 9496], to the conformation that the lower state of the 407 nm band is the 4Φ ground electronic state. Rough estimates of the vibrational interval ΔG(1/2) and the spin–orbit coupling constant A in the 4Γ state were also obtained.  相似文献   

9.
10.
Summary We described a13CH3F Raman laser pumped by a grating tuned 20 atmospheres CO2 laser. The emission characteristics of the13CH3F laser extends from 14 cm–1–35 cm–1 and from 49 cm–1–72 cm–1; about 65% of these frequency ranges can be covered with tunable radiation. The characteristics shows a strong dependence on the rotaional quantum numbers of the states involved in the Raman laser transitions and, within each tuning interval, on the frequency offset with respect to the frequencies of resonant transitions. We obtained, at 51 cm–1, a maximum FIR laser pulse energy of about 800 J (at a pump energy of 200 mJ), corresponding to a photon conversion of about 8%. In some cases we have observed simultaneous emission at a Raman and a cascade frequency. In addition, FIR emission power dependence on13CH3F gas pressure and pump pulse power were investigated for different J quantum numbers.  相似文献   

11.
Magnetotransport at fields up to 500 mT and LF-noise characteristics are reported for miniature magnetoresistors with ferrite concentrators based on Sn-doped n-InSb/i-GaAs heterostructures grown by MBE. The thickness of the InSb epilayers lie in the range 0.55–1.5 μm giving room temperature mobilities of 2.5–5.5 m2 V−1 s−1 with carrier densities of (0.5–1.5)×1017 cm−3. The room temperature magnetoresistance (MR) for our two terminal devices could be as high as 115% at 50 mT which is comparable to the extraordinary MR (ExMR) recently reported in microscopic composite van der Pauw disks four terminal devices [Science 289 (2000) 1530]. In addition, a high signal-to-noise ratio and a good temperature stability of R(B)/R0=0.5–0.83% K−1 was observed for B<60 mT (below the saturation field Bsat for ferrite). Device resistance stability R0(T) was equal to 0.27–0.66% K−1 in zero field with a nominal device resistance R0=197–224 Ω for DC currents in the range I=0.01–1.0 mA. The minimum detectable magnetic field is estimated from the reduced differential MR (∂R/∂B)/R=2000% T−1 at B=31 mT and normalised 1/f current noise power spectral density measured at the same field. The resolution limit Bmin=2.6 nT at 102 Hz and Bmin=0.82 nT at 103 Hz. These resolution limits are seven times better than those recently reported for the same material n-InSb/i-GaAs and ferrite fabricated Hall sensors [Magnetotransport and Raman characterization of n-InSb/i-GaAs epilayers, for Hall sensors applications over extremely wide ranges of temperature and magnetic field, Proceedings NGS 10, IPAP Conference Series 2, IPAP, Tokyo, 2001, pp. 151–154].  相似文献   

12.
We report both Raman and infrared reflectivity spectra of M2Cu2O5 (M=Y, Ho) at room temperature in the spectral range of 30–1000 cm–1.37 (31) ir and 18 (15) Raman active modes of Y2Cu2O5 (Ho2Cu2O5) are observed. A factor group analysis has been performed to identify the symmetries of the observed modes. Comparing the vibrational spectra of these compounds we conclude that the phonons above 300 cm–1 originate from the Cu–O vibrations and those under 300 cm–1 from M–O vibrations.Alexander von Humboldt Foundation fellow  相似文献   

13.
It is shown that the structures of erbium-doped titanium oxide xerogel/porous anodic alumina manifest strong photoluminescence at 1.53 µm due to the 4I13/24I15/2 transition of Er3+ ions in the xerogel. In the titanium oxide xerogel, two phases — anatase and rutile — have been detected by the x-ray analysis method. The luminescence excitation spectrum of erbium at 1.53 µm consists of a set of lines that correspond to the intracenter transitions of Er3+ ions with a maximum band at 524 nm caused by the 4I15/22H11/2 transition. The lifetime of erbium in such structures is 1.8 msec.__________Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 72, No. 1, pp. 94–98, January–February, 2005.  相似文献   

14.
The electrical properties of the SiO2/n-type Si(100) interface, where the silicon-oxide layer was grown by an electrodeless rf oxygen-plasma-cathodization technique, were investigated usingC-V and DLTS methods. Interface traps with high density in the range of 1012 eV–1 cm–2 and a capture cross section as large as 10–18 cm2 were found in the upper region of the silicon forbidden gap. After a post-annealing process, typically at 400°C for 30 min in dry N2 atmosphere, their densities and capture cross sections were reduced to the range of 1–2 × 1011 eV–1 cm–2 and 10–19 cm–2, respectively. Apparant differences in DLTS curves before and after thermal annealing were also observed. Results are qualitatively explained by considering the specific oxidation and annealing mechanism of this low-temperature silicon-oxidation technique.  相似文献   

15.
The preparation of GdVO4:Bi3+ ceramics is indicated. Bismuth shows a strong tendency to evaporate during the sintering process. Time-resolved emission spectroscopy shows for sufficiently low Bi3+ concentrations subsequently: blue VO 4 3– emission with a decay time corresponding to the transfer rate (106 s–1), yellow VO 4 3– –Bi3+ emission, rare-earth impurity emission and VO 4 3– –Bi3+ afterglow.  相似文献   

16.
Self-diffusion coefficients of Li+ DLi+, PF6 DPF6 and solvent propylene carbonate (PC) DPC in LiPF6−PC solutions were determined at 298 K by the pulse gradient spin echo (PGSE) NMR technique over the salt concentration range of 0.1–3.0 M (M = mol dm– 3). The order of the diffusion coefficients was found to be DLi+ < DPF6 < DPC over the concentration range examined, and they were monotonically decreased with increasing the salt concentration. Haven ratio Λ/ΛNMR, where Λ and ΛNMR represent the ionic conductivity measured electrochemically and that estimated via the Nernst-Einstein equation using the diffusion coefficient, respectively, was evaluated as the measure of the ion–ion interaction in the LiPF6–PC solutions. Though Λ/ΛNMR values for LiPF6-solutions decrease with increasing the salt concentration, they were greater than those for LiBF4–PC solutions over the whole concentration range examined, which indicates that the ion pair formation ability of PF6 ion is weaker than that of the BF4 ion. The smaller value of the ionic conductivity for the highly concentrated LiPF6–PC solution (above 2.0 M) than that of the LiBF4-solutions can be attributed to the more rapidly increased viscosity relative to the LiBF4-solution. Classic molecular dynamics (MD) simulations for the respective LiPF6 and LiBF4-solution of 0.5 and 1.0 M were also carried out based on the effective pair potentials. Diffusion coefficients, ionic conductivity and Haven ratio for these solutions were calculated from MD trajectories, and they qualitatively agree with those evaluated by experiments. Pair correlation functions gLiO(r) (for Li+–O (PC) pair) and gLiPF6(r) (for Li+–PF6 pair) or gLiBF4(r) (for Li+–BF4 pair) revealed that the lithium ion weakly forms the contact ion pairs with PF6, whilst strongly with BF4, which supports the present experimental results. Moreover, the simulation results show that both anions in the contact ion pairs predominantly take the monodentate form, which is in contrast to the multidentate coordination predicted by ab initio calculation in gas phase.  相似文献   

17.
Breakdown delay times (tdel) for films of managanese-doped zinc sulfide (ZnS:Mn) were measured in the range 10–6–10–1 s. The maximum value was tdel=10–3–10–2 s. The electrical strength (Ebr) was found to increase as the voltage pulse duration was reduced, the more so the thinner the ZnS:Mn film. The temperature dependence of Ebr exhibited a weak reduction in Ebr as the temperature was raised to roughly 80°C and a sharp reduction in Ebr for T>130°C. A maximum in Ebr was observed at T130°C which is presumably explained by a structural modification of the ZnS:Mn film. The experimental results obtained are explained in terms of a combined electronic and thermal breakdown mechanism.State Academy of Control Systems and Radioelectronics, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 3–6, April, 1994.  相似文献   

18.
The laser-induced fluorescence excitation spectrum of jet-cooled CoF molecules has been studied in the range of 18 800–22 000 cm−1. Ten observed vibronic bands have been classified into three transitions with the 0–0 band at 18 909, 19 236, and 20 654 cm−1, assigned as the [18.8]3Φ4X3Φ4, [19.2]3Φ4X3Φ4, and [20.6]3Γ5X3Φ4 transition, respectively, the two 3Φ states, [18.8]3Φ and [19.2]3Φ, are consistent with Adam’s results (10). The previously unanalyzed [20.6] state is identified in the current work. A rotational analysis of [20.6]3Γ5X3Φ4 transition has been performed and effective equilibrium molecular constants have been determined for the first time. In addition, lifetime measurements of the three electronic transitions were carried out under the collision-free condition. From the lifetime analysis, we consider that the V=1, 2, and 3 vibrational levels of [18.8]3Φ state are perturbed by another state.  相似文献   

19.
The Ag2O–TiO2–SiO2 glasses were prepared by Ag+/Na+ ion-exchange method from Na2O–TiO2–SiO2 glasses at 380–450 °C below their glass transition temperatures (Tg), and their electrical conductivities were investigated as functions of TiO2 content and the ion-exchange ratio (Ag/(Ag+Na)). In a series of glasses 20R2xTiO2·(80−x)SiO2 with x=10, 20, 30 and 40 in mol%, the electrical conductivities at 200 °C of the fully ion-exchanged glasses of R=Ag were in the order of 10−5 or 10−4 S cm−1 and were 1 or 2 orders of magnitude higher than those of the initial glasses of R=Na. The glass of x=30 exhibited the highest increase of conductivity from 3.8×10−7 to 1.3×10−4 S cm−1 at 200 °C by Ag+/Na+ ion exchange among them. When the ion-exchange ratio was changed in 20R2O·30TiO2·50SiO2 system, the electrical conductivity at 200 °C exhibited a minimum value of 7.6×10−8 S cm−1 around Ag/(Ag+Na)=0.3 and increased steeply in the region of Ag/(Ag+Na)=0.5–1.0. When the ion-exchange temperature was changed from 450 to 400 °C, the conductivity of the ion-exchanged glass of x=30 decreased. The infrared spectroscopy measurement revealed that the ion-exchange temperature of 450 °C induced a structural change in the glass of x=30. The Tg of the fully ion-exchanged glass of x=30 was 498 °C. It was suggested that the incorporated silver ions changed the average coordination number of titanium ions to form higher ion-conducting pathway and resulted in high conductivity in the titanosilicate glasses.  相似文献   

20.
A systematic study of the doping of the Mn-sites by cobalt in three series of manganites — La0.76Ba0.24(Mn1−xCox)O3 single crystals, La2/3Ba1/3(Mn1−xCox)O3 and La(Mn1−xCox)O3 ceramics has been performed. It was found that La(Mn1−xCox)O3 annealed at 800°C in the range 0.4x0.9 is a mixture of ferromagnetic domains with ordered Mn and Co ions and ionically disordered spin-glass domains. In the quenched samples the fraction of spin-glass-type component increases strongly. The La2/3Ba1/3(Mn1−xCox)O3 solid solutions exhibit also an evidence for phase separation in the range 0.5x0.8. All the La(Mn1−xCox)O3 samples show an insulating behavior, however, magnetoresistance reduces strongly when the cobalt content rises to x=0.5. The La0.76Ba0.24(Mn1−xCox)O3 single crystals show first-order phase transition below their Curie points associated with a change of ground state of the Co2+ ions. The magnetic phase diagrams are depicted. The results are discussed in terms of positive Mn3+–O–Mn4+, Mn3+–O–Mn3+, Mn4+–O–Co2+ and negative Mn4+–O–Mn4+, Co2+–O–Co2+, Co2+–O–Mn3+ superexchange interactions as well as Co2+ and Mn4+ ionic ordering.  相似文献   

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