Quantum states of hydrogen (H, D, T) atoms on Cu(1 0 0) and (1 1 0) surfaces

We investigate the quantum mechanical behavior of adsorbed hydrogen (H, D, T) on Cu(1 0 0) and (1 1 0) surfaces. We construct potential energy surfaces (PESs) for the motion of the hydrogen H atom on Cu(1 0 0) and (1 1 0) surfaces within the framework of density functional theory. The potential energy takes a minimum value on the hollow site of Cu(1 0 0) and on the short bridge site of Cu(1 1 0). Moreover, we calculate the quantum states of hydrogen atom motion on these calculated PESs. The ground state wave function of the hydrogen atom motion is strongly localized around the hollow site on the Cu(1 0 0) surface. On the other hand, the ground state wave function of the hydrogen atom motion on Cu(1 1 0) is distributed from the short bridge site to two neighboring pseudo-threefold sites. We finally show isotope effects on the quantum states of the motion of hydrogen on both surfaces.     

Diffusion of single adatom Cu on Cu (0 0 1) and (1 1 0) surfaces

With static relaxation, the surface diffusion activation energies of a single Cu adatom migrated by both atomic exchange and hopping mechanisms and the forces acted on the diffusing adatom from other atoms of Cu (0 0 1) or (1 1 0) surface are calculated by using the MAEAM. When adatom migrated on Cu (0 0 1) or (1 1 0) surface, the increment curves of the system energy by hopping mechanism are symmetrical and the saddle points are in the midpoints of the migration path, but the ones by the exchange mechanism are dissymmetrical and the saddle points are always close to the initial hole positions of the adatom and away from the initial equilibrium positions of the exchanged atom. From minimization of both the diffusion activation energy and the force acted on the diffusing adatom from other atoms, we found that, on Cu (0 0 1) surface the favorable diffusion mechanism is hopping mechanism, however, on Cu (1 1 0) surface, hopping via long bridge is easier than the exchange mechanism but the hopping via short bridge is more difficult than the exchange mechanism.     

The surface stress of the (1 1 0) and (1 0 0) surfaces of rutile and the effect of water adsorbents

The surface stress on clean TiO₂ (1 1 0) and (1 0 0) surfaces, and those with four types of adsorbent - (i) molecularly adsorbed water, (ii) dissociatively adsorbed water, (iii) dissociatively adsorbed water at an oxygen vacancy, and (iv) adsorbed hydrogen - was investigated in the framework of density functional theory using a slab model. The calculations were intended to rationalize the effect of the artificially introduced stress that occurs in experimentally photoinduced hydrophilicity. Tensile stress was observed for a clean (1 1 0) surface, and a mixture of tensile and compressive stress for a clean (1 0 0) surface. The adsorbate-induced surface stresses were analyzed in terms of the sixfold coordinated character of the surface titanium atoms, hydrogen bonds between the adsorbents and the bridging oxygen atoms, and the change in electron density in the vicinity of the surface.     

Sticking of atomic hydrogen on the tungsten (0 0 1) surface

The sticking of hydrogen atoms with kinetic energies in the range 0.003-10 eV on a clean (0 0 1) tungsten surface has been investigated using molecular dynamics simulations. The atoms are found to stick to the surface at 0 and 300 K, with a sticking coefficient smaller than 0.6 for kinetic energies higher than 3 meV. The adsorption sites for H on the W(0 0 1) surface are also presented. The dominant site is in perfect agreement with the experimentally found bridge site.     

Diffusions of small clusters on Pt(1 1 1) and Cu(1 1 1) surfaces

Diffusions of small cluster Pt₆ on Pt(1 1 1) surface and Cu₆ on Cu(1 1 1) are studied by molecular dynamics simulation, respectively. The atomic interaction is modeled by the semiempirical potential. The results show that the diffusion processes in the two systems are far different. For example, on Pt(1 1 1) surface, the hopping of single atom and the shearing of two atoms of hexamer only occur on the adatom(s) adsorbed at B-step, while on Cu(1 1 1) surface they can appear on the adatom(s) either at A-step or B-step. To the concerted translation of the parallelogram hexamer, the anisotropy in the diffusion path is observed in the two systems, the mechanisms and then the preferential paths, however, are completely different. The reasons for these diffusion characteristics and differences are discussed.     

Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Comparative study of H2 adsorption on W(1 0 0)-c(2 × 2)Cu and W(1 0 0): Surface alloying effects

The interactions of H and H₂ with W(1 0 0)-c(2 × 2)Cu and W(1 0 0) have been investigated through density functional theory (DFT) calculations to elucidate the effect of Cu atoms on the reactivity of the alloy. Cu atoms do not alter the attraction towards top-W sites felt by H₂ molecules approaching the W(1 0 0) surface but make dissociation more difficult due to the rise of late activation barriers. This is mainly due to the strong decrease in the stability of the atomic adsorbed state on bridge sites, the most favourable ones for H adsorption on W(1 0 0). Still, our results show unambiguously that H₂ dissociative adsorption on perfect terraces of the W(1 0 0)-c(2 × 2)Cu surface is a non-activated process which is consistent with the high sticking probability found in molecular beam experiments at low energies.     

First principle calculations of benzotriazole adsorption onto clean Cu(1 1 1)

The adsorption of benzotriazole (BTAH or C₆N₃H₅) on a Cu(1 1 1) surface is investigated by using first principle density functional theory calculations (VASP). It is found that BTAH can be physisorbed (<0.1 eV) or weakly chemisorbed (∼0.43 eV) onto Cu(1 1 1), and the chemical bond is formed through nitrogen sp² lone pairs. The weak chemisorption can be stabilized by reaction with neighboring protonphilic radicals, like OH⁻. Furthermore, the geometries and associated energies of intermolecular hydrogen bonds between adsorbates on Cu(1 1 1) are also calculated. A model of the first layer of BTAH/BTA⁻ on Cu(1 1 1) surface is developed based on a hydrogen bond network structure.     

Studies on scattering of fast H and He atoms from Fe films grown on Cu(0 0 1)

The structure of ultrathin epitaxial Fe films grown on Cu(0 0 1) at room temperature is investigated by grazing scattering of fast H and He atoms. By making use of ion beam triangulation, direct information on the atomic structure of the film and substrate surfaces are obtained. We discuss a new variant of this method based on the detection of the number of emitted electrons. The data is analyzed via computer simulations using classical mechanics which provides a quantitative analysis with respect to projectile trajectories.     

Coverage-dependent absorption of atomic hydrogen into the sub-surface of Cu(1 1 1) studied by density-functional-theory calculations

With density-functional-theory calculations, we have studied coverage-dependent absorption of H atoms into the sub-surface below a face-centered-cubic (fcc) hollow site of Cu(1 1 1). Both frozen and relaxed surface lattices were considered when the atomic H migrated from the surface to the sub-surface. The potential energy curve for the absorbing H shows that the surface site is in general favored over the sub-surface site, and this trend varies little with the H coverage (0.11-0.67 ML). If the hexagonal-close-packed (hcp) hollow sites immediately vicinal to the absorbing H are pre-adsorbed with other H atoms, the surface adsorption potential is greatly increased, because of the repulsive H-H interaction, to a value near, or even greater than, the sub-surface absorption potential; when two or three H atoms (on the hcp sites) are beside the absorbing H, the energy barrier for the sub-surface absorption is decreased, whereas that for diffusion from the sub-surface to the surface is enhanced. These results indicate that, on an H-saturated Cu(1 1 1) surface (0.67 ML), the sub-surface sites below the fcc sites with two or three neighboring H atoms can trap the sub-surface H.     

D abstraction by H at a D-saturated Ru(0 0 1) surface

D abstraction (ABS) by H at Ru(0 0 1) surfaces initially saturated with D adatoms has been investigated using in situ mass spectrometry. HD and D₂ desorption rates are measured at various surface temperatures T as a function of H exposure time. Yield of D₂ desorption increases with T, while that of HD is little affected. Analyzing the measured rate curves, HD and D₂ desorption orders are evaluated to be 1.7 ± 0.1 and 2.5 ± 0.1, respectively, with respect to D coverage θ_D. To pursue the origin of the derived non-integral reaction orders the rate curves are further analyzed with the rate equations constructed to involve several ABS channels. Consequently, we find that the HD desorption is mainly governed by a second-order rate law in θ_D rather than the conventional hot atom-mediated ABS reaction even when it is corrected to include an isotope effect on ABS. We argue that such second-order ABS kinetics becomes important when the H atoms in excited state of chemisorption have energetically relaxed to some extent, and thereby tend to reside at, e.g. hexagonal closed packed hollow sites, interacting with nearby adatoms. On the other hand, the D₂ rate curves can be fit with third-order kinetics, consistent with the Langmuir-Hinshelwood mechanism in a super-saturation state. The isotope effect plays an essential role in the ABS reaction of D abstraction by H which competes with H abstraction by H as D adatoms are replaced by H atoms.     

Energetics, structural and magnetic ordering of H/Fe/M(0 0 1), (M=Cu, Ag) systems

We performed density functional theory calculations using the full-potential linearized augmented plane wave method and generalized gradient approximation to investigate the interaction of hydrogen with Fe surface layers in the Fe/M(0 0 1) system, where M=Cu, Ag. The adsorption of hydrogen is found to be preferable at bridge sites in both H/Fe(0 0 1) and H/Fe/Ag(0 0 1), whereas the preferred sites are the fourfold site above the surface layer in the H/Fe/Cu(0 0 1) system. The adsorption energies are enhanced due to Cu and Ag substrates as compared to Fe(0 0 1) substrates. The local density of states at the Fermi level and the magnetic moments are reduced due to the presence of H for the different systems.     

Etching of silicon nanowires on Ag(1 1 0) by atomic hydrogen

Scanning Tunnelling Microscopy, High Resolution Electron Energy Loss Spectroscopy and High Resolution X-Ray Photoelectron Spectroscopy have been used to study the adsorption of atomic hydrogen onto Si nanowires grown on Ag(1 1 0). We demonstrate that the hydrogen strongly interacts with the Si nanowires modifying their structural and electronic properties. Hydrogen atoms etch the Si nanowires and eventually lead to their complete removal from the Ag(1 1 0) surface.     

The interaction of carbon with Si(1 1 1):As and Si(1 1 1):H surfaces, a theoretical study

Density functional theory calculations have been performed to determine the adsorption site of carbon at the Si(1 1 1):As and Si(1 1 1):H surfaces at different coverages. The As- and H-passivated surfaces were simulated by replacing the topmost Si layer by As or by saturating the Si dangling bonds with hydrogen atoms, respectively. Different high symmetry sites were considered. Carbon was placed successively in the fourfold (T₄) or threefold coordinated (H₃), the ontop (T₁) sites or substituted for a Si atom in the S₅ position located underneath the Si adatom in the T₄ site. We found that the preferred carbon adsorption site depends on the coverage of the passivated surfaces. At low coverages i.e. at 1/16 ML and 1/3 ML, it prefers a distorted T₄ position whereas at 1 ML, it occupies an H₃ site. This contrasts with the clean surface where the most energetically favored site is the S₅ at all coverages. Carbon adsorption induces a significant change in the structural geometry of the surface atoms, leading to a charge re-arrangement in the surface layers.     

Neutralization of Li ions scattered by the Cu (1 0 0) and (1 1 1) surfaces: A localized picture of the atom-surface interaction

Large and face dependent neutral fractions have been found recently in the scattering of Li⁺ by Cu(1 0 0) and Cu(1 1 1) surfaces. These results for high work function surfaces are unexpected within the ‘traditional’ picture of a Li⁺ ion departing from a jellium surface model. In the present work the Li⁺/Cu(1 0 0) and Li⁺/Cu(1 1 1) interacting systems are described by a previously developed bond-pair model based on the localized interactions between the projectile ion and the atoms of the surface, and on the extended features of the electronic band structure through the surface local density of states. By only including the resonant neutralization to the Li atom ground state we explained the face and energy dependences of the measured neutral fractions for large outgoing energy values. We found that the downward shift of the Li ionization level below the Fermi level caused by the short range chemical interactions, is the main responsible of a high neutralization by the resonant mechanism. The remaining differences between theory and experiment values can be explained in terms of the energy gaps and image potential states appearing in these surfaces. The calculated distance behaviours of the energy levels corresponding to the first excited (Li-1s²2p) and the negative (Li-1s²2s²) atomic configurations indicate that they can also participate in the ion-surface charge exchange process.     

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(1 1 1):H and GaAs(0 0 1) and corrosion of Cu3Au(1 1 1)

Electrochemical deposition of Cu and Co in monolayer amounts on hydrogen terminated Si(1 1 1) was studied ex situ and in situ by X-ray techniques. The X-ray beam was found to have a strong effect on the deposit causing desorption under the beam. Cu deposition on GaAs(0 0 1) from UHV is compared with electrodeposited Cu on the same surface, elucidating similarities and differences of electrochemical and UHV deposition. Roughening due to corrosion of Cu₃Au(1 1 1) is observed by crystal truncation scattering. The observed behaviour of passivation of this surface is explained by the formation of Au clusters, increasingly covering the surface at higher oxidation potential.     

Determination of a (4 × 4) structure formed on a Cu(0 0 1) surface by adsorption of calcium

The adsorption of calcium (Ca) atoms on a Cu(0 0 1) surface has been studied by low-energy electron diffraction (LEED) at 130, 300 and 400 K. It is found that a (4 × 4) was the only LEED pattern appeared at 400 K while a quasi-hexagonal structure was formed in a wide range of submonolayer coverage at 130 K. At 300 K, the (4 × 4) LEED spots were broad and weak. The (4 × 4) structure formed at 400 K was determined by a tensor LEED I-V analysis. It is a new-type of surface alloys consisting of five substitutional Ca atoms, nine surface Cu atoms, and two atomic vacancies in the unit cell. In spite of a quite large size-difference between Ca (3.94 Å) and Cu (2.55 Å) atoms, all Ca atoms are located at the substitutional sites. Among surface alloys so far reported, the atomic size ratio between Cu and Ca in the (4 × 4), 1.54, is the largest. Optimized structural parameters reveal that large lateral displacements of surface Cu atoms, being enabled by the appearance of the vacancies, allow the formation of the (4 × 4) structure.     

Dynamics of copper atoms on Si(1 1 1)-7 × 7 surfaces

This study investigated the dynamics of copper atoms adsorbed on Si(1 1 1)-7 × 7 surfaces between 300 K and 623 K using a variable-temperature scanning tunneling microscope (STM). The diffusion behavior of copper clusters containing up to ∼6 atoms into a particular half unit cell of the 7 × 7 reconstructed Si(1 1 1) surface was considered. The movements and the formation of copper clusters were tracked in detail. The activation energies and pre-exponential factors for various diffusion paths were estimated. Finally, the Cu-etching-Si process and the quasi-5 × 5 incommensurated phase of Cu/Si islands were discussed.     

Surface structures of atomic hydrogen adsorbed on Cu(1 1 1) surface studied by density-functional-theory calculations

The surface structures of atomic hydrogen adsorbed on Cu(1 1 1) surface have been studied theoretically by using density-functional-theory calculations. The results show that 0.67 ML hydrogen adsorbed on threefold hollow sites forming (3 × 1) superstructure and 0.5 ML hydrogen adsorbed on threefold hollow sites forming (2 × 2)-2H superstructure with central H at trigonal sites induce most significant substrate reconstructions and that fits best the observed (3 × 3) and (2 × 2) LEED patterns, respectively. The potential energies for the hydrogen in these two models are also lower than those in other competing models. Accordingly, these two models are the most preferable structures for 0.5-0.67 ML and 0.3-0.5 ML hydrogen adsorbed on the Cu(1 1 1) surface. In addition, the calculations also suggest that the lateral H-H interaction is not of simple repulsion and how the adsorbed hydrogen is arrayed is important in modifying the adsorption energy.