Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Low-temperature STM/STS studies on boron-doped (1 1 1) diamond films

We have performed scanning tunneling microscopy/spectroscopy (STM/STS) experiments on (1 1 1)-oriented epitaxial films of heavily boron-doped diamond (T_c∼5.4 K). We present that tunneling conductance spectra show temperature-dependent spatial variations. In the low-temperature region (T=0.47 K), the tunneling spectra do not show strong spatial dependence and a superconducting energy gap is observed independent of the surface morphology. In the high-temperature region (T=4.2 K), on the other hand, the tunneling conductance spectra show significant spatial dependence, indicating the inhomogeneous distribution of the superconducting property due to the distribution of boron atoms.     

Scanning tunneling microscopy study on a BC3 covered NbB2(0 0 0 1) surface

We have investigated a BC₃ covered NbB₂(0 0 0 1) surface using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and low energy electron diffraction (LEED). The STM images reveal characteristic features of a Moiré pattern reflecting an incommensurate relation of the BC₃ sheet with the substrate: bright protrusions with the periodicity of the substrate lattice are modulated in intensity with the periodicity of the BC₃ lattice. As a result, the surface exhibits nm-scale patchy regions with either the √3 × √3 or the 1 × 1 structure of the substrate. The two-dimensional Fourier transformation pattern of the STM image is consistent with the LEED pattern proving the epitaxial and incommensurate relationship between BC₃ surface sheet and substrate. No feature of a predicted superconducting gap was found in STS spectra measured at 5 K.     

High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(1 1 1)-(6 × 6) substrate

The electronic structure of Si(1 1 1)-(6 × 6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb_(1 1 1) and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(1 1 1)-(6 × 6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.     

Investigation of STM tip influence on the recorded position of the Shockley surface state on Au(1 1 1)

Current imaging tunneling spectroscopy (CITS) carried out in UHV at room temperature was used to study the electronic structure of the Au(1 1 1) surface in the range of −1.0-1.0 eV. The CITS experiment showed the existence of the Shockley surface state (SS) located in range 0.3-0.7 eV below the Fermi level. A wide range of SS locations is explained by the influence of the electronic structure of the tip on the measurement of the tunneling current. This hypothesis is supported by a simple theoretical model. Finally, a new method of CITS analysis is suggested. The method is related to counting local maxima locations on each tunneling spectroscopy curve and building a histogram. This method of data analysis allows finding statistically the most frequently appearing maxima. Using the histogram method the location of the SS is estimated to 0.47 eV below the Fermi level.     

Investigation of the Shockley surface state on clean and air-exposed Au (1 1 1)

Scanning tunneling microscopy (STM) and spectroscopy (STS) carried out in vacuum and air were used to study the electronic structure of the Au (1 1 1) surface in the range of 0.0-0.7 eV below the Fermi level. The STS experiment carried out in UHV showed the existence of the Shockley surface state (SS) located 0.48 eV below the Fermi level. STS carried out in air showed strong local maximum located 0.35 eV below the Fermi level. This maximum was ascribed to the SS shifted toward lower energy due to carbon and oxygen overlayer. To confirm that the SS could exist on the sample exposed to air we did ultraviolet photoemission spectroscopy (UPS) experiment on air-treated and clean Au (1 1 1). Our results suggest that the SS position initially measured at 0.38 eV below the Fermi level was shifted to 0.27 eV after air treatment. Additionally, the level of contamination was measured using X-ray photoelectron spectroscopy (XPS).     

One-dimensional structural and electronic properties of magnetite Fe3O4(1 1 0)

We study the structure and the electronic properties of the (1 1 0) surfaces of magnetite Fe₃O₄ thin films by scanning tunneling microscopy (STM) and spectroscopy (STS). The STM images show a surface reconstruction consisting of ridges along the direction. Based on atomically resolved STM images we present a model for the observed ridge reconstruction of the surface, in agreement with a bulk-truncated layer containing both octahedral and tetrahedral iron ions. The metallic and semiconductor-like shapes of the measured current-voltage (I-V) curves indicate a non-uniform segregation of magnesium through the film. The weak contrast between the tops and valleys of ridges measured in the STS current maps is attributed to tetrahedral and octahedral coordination at the tops and the valleys, respectively. This attribution is in agreement with the proposed structure model. We observe a contrast enhancement at a tip change accompanied by a corrugation enhancement. This tip change is induced by picking up material from the sample, resulting in a magnetic tip. Thus, the contrast enhancement is attributed to detection of spin polarized current.     

Deposition and fabrication of alkanethiolate gold nanocluster films on TiO2(1 1 0) and the effects of plasma etching

Deposition and fabrication of films of Au nanoclusters protected by alkanethiolate ligands are attempted on a TiO₂(1 1 0) surface and the structures of films are observed by a scanning tunneling microscope (STM). Effects of oxygen and hydrogen-plasma etching in addition to UV irradiation on the structure and chemical composition of the films are also investigated by using STM and X-ray photoelectron spectroscopy. Alkanethiolate Au nanoclusters are produced using a modified Brust synthesis method and their LB films are dip-coated on TiO₂(1 1 0). Alkanethiolate Au nanoclusters are weakly bound to the substrate and can be manipulated with an STM tip. Net-like structures of alkanethiolate Au nanoclusters are formed by a strong blast of air. Oxygen-plasma etching removes alkanethiolate ligands and simultaneously oxidizes Au clusters. At room temperature, prolonged oxygen-plasma etching causes agglomeration of Au nanoclusters. UV irradiation removes ligands partly, which makes Au nanoclusters less mobile. The net-like structure of alkanethiolate Au clusters produced by a blast of air is retained after oxygen and hydrogen-plasma etching.     

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)

We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. The Si dangling bonds are created by the chemisorption of single hydrogen atoms forming a Si-Si-H hemihydride. At room temperature, the hemihydride induces static buckling on adjacent Si-Si dimers. In the STM measurements, we observe that the orientation of the static buckling pattern can be reversed with tip-sample bias and influenced by the substrate doping. Our DFT calculations yield a correlation between the electron occupancy of the hemihydride Si dangling bond and the buckling orientation around it.     

Vibration-induced structures in scanning tunneling microscope light emission spectra of Ni(1 1 0)-streaky (1 × 2)-H

We have measured the scanning tunneling microscope (STM) light emission spectra of Ni(1 1 0)-streaky (1 × 2) surfaces. When the tip was fixed over atomic hydrogen adsorbed on the surfaces, two types of vibration-induced structure were observed in the STM light emission spectra. One is the periodic fine structures that were already reported in our previous paper [Y. Uehara, S. Ushioda, Phys. Rev. Lett. 92 (2004) 066102] and the other newly found in the present experiments is a stepwise structure that is located at the vibrational energy of hydrogen below the cutoff energy of the STM light emission. They are ascribed to different excitation mechanisms of the vibration in the STM light emission process; the periodic fine structures appear when the vibrating motion is directly excited by the electrons injected from the tip. Conversely, the stepwise structure is observed when it is excited by the electromagnetic fields confined in the tip-sample gap, i.e., by localized surface plasmons.     

Growth and electronic properties of ultra-thin Ag films on Ni(1 1 1)

We studied the growth mode and electronic properties of ultra-thin silver films deposited on Ni(1 1 1) surface by means of scanning tunnelling microscopy (STM) and angle resolved photoemission spectroscopy (ARPES). The formation of the 4d-quantum well states (QWS) was analysed within the phase accumulation model (PAM). The electronic structure of the 1 ML film is consistent with the silver layer which very weakly interacts with the supporting surface. The line-shape analysis of Ag-4d_xz,yz QWS spectrum support the notion of strong localization of these states within the silver layer. The asymmetry of the photoemission peaks implies that the decay of the photo-hole appears to be influenced by the dynamics of the electrons in the supporting surface.     

A novel method for elimination of the gold-islands formed in the self-assembled monolayers of benzeneselenol on Au(1 1 1) surface

Molecular ordering of benzeneselenol (BSe) self-assembled monolayers (SAMs) on Au(1 1 1) substrates have been investigated by scanning tunnelling microscopy (STM) [1]. After short immersion time (10 min), elevated islands with height of 2.4 Å were found to cover the entire gold surface. On and among the islands, the STM results exhibited the formation of a highly ordered phase (α-phase) by BSe species. In the present study, a novel method is presented to completely eradicate the elevated gold-islands. The method depends on a repetitive STM scanning over the same part of the SAM at restricted tunnelling conditions. After almost 6 h of successive scanning, the surface becomes clean and free of the elevated islands. Moreover, this method was found to induce phase transformation into β-phase. The size of the ordered domains of the β-phase was found to exceed five times that of α-phase. Such a long-range ordering of the β-phase at room temperature has not been previously observed for any system on Au(1 1 1). After detailed analyses, the β-phase was found to have a 33.5% of lower packing density than that of α-phase.     

Au/TiO2/Ru(0 0 0 1) model catalysts and their interaction with CO

Au/TiO₂/Ru(0 0 0 1) model catalysts and their interaction with CO were investigated by scanning tunneling microscopy and different surface spectroscopies. Thin titanium oxide films were prepared by Ti deposition on Ru(0 0 0 1) in an O₂ atmosphere and subsequent annealing in O₂. By optimizing the conditions for deposition and post-treatment, smooth films were obtained either as fully oxidized TiO₂ or as partly reduced TiO_x, depending on the preparation conditions. CO adsorbed molecularly on both oxidized and reduced TiO₂, with slightly stronger bonding on the reduced films. Model catalyst surfaces were prepared by depositing submonolayer quantities of Au on the films and characterized by X-ray photoelectron spectroscopy and scanning tunneling microscopy. From X-ray photoelectron spectroscopy, a weak interaction between the Au and the TiO₂ substrate was found. At 100 K CO adsorption occurred on both the TiO₂ film and on the Au nanoparticles. CO desorbed from the Au particles with activation energies between 53 and 65 kJ/mol, depending on the Au coverage. If the Au deposit was annealed to 770 K prior to CO exposure, the CO adsorption energy decreased significantly. STM measurements revealed that the Au particles grow upon annealing, but are not encapsulated by TiO_x suboxides. The higher CO adsorption energy observed for smaller Au coverages and before annealing is attributed to a significantly stronger interaction of CO with mono- and bilayer Au islands, while for higher particles, the adsorption energy becomes more bulk-like. The implications of these effects on the known particle size effects in CO oxidation over supported Au/TiO₂ catalysts are discussed.     

On the preparation and electronic properties of clean W(1 1 0) surfaces

We have studied the influence of oxygen pressure during the cyclic annealing used for the cleaning of W(1 1 0) surfaces. For this purpose the surface morphology and electronic properties are measured by means of scanning tunneling microscopy (STM) and spectroscopy (STS), respectively. It is found that the surfaces with impurity atom densities as low as 2 × 10⁻³ can be obtained by gradually reducing the oxygen pressure between subsequent annealing cycles down to about 2 × 10⁻⁸ mbar in the final cycle. Only on the clean surface a bias-dependent spatial modulation of the local density of states (LDOS) is observed at step edges and around impurity sites by STS. In addition, we find a pronounced peak in the occupied states. In combination with density functional theory calculations these features can be traced back to a dispersive p_z-d_xz-type surface resonance band and the lower band edge of a surface state, respectively.     

Hydroxylation-induced modifications of the Al2O3/NiAl(0 0 1) surface at low water vapour pressure

STM, STS, LEED and XPS data for crystalline θ-Al₂O₃ and non-crystalline Al₂O₃ ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10⁻⁷-1 × 10⁻⁵ mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O_1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al³⁺ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlO_xOH_y with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H₂O) = 1 × 10⁻⁷ mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified.     

Morphology and electronic structure of bcc Co(1 1 0) and fcc/hcp Co(1 1 1) on Fe(1 1 0) investigated by STM and STS

We report on the growth of ultrathin epitaxial Co films on Fe(1 1 0) examined by scanning tunneling microscopy and spectroscopy (STM and STS). At room temperature Co forms pseudomorphic, ideally ordered body-centered cubic (bcc) layers for the first two monolayers as confirmed by atomically resolved STM images. This is in contrast to the related case of Co/Cr(1 1 0) where a superstructure occurs in the second layer. The third monolayer forms a close-packed structure and causes a transformation of the buried second monolayer into a close-packed structure. The Fe(1 1 0) substrate strongly influences the electronic structure of the first Co monolayer as concluded from the dI/dU spectra. This influence is less important for the second monolayer. The measured local density-of-states function for the bcc Co double layer is in agreement with theoretical predictions for bcc Co.     

Phosphorus and hydrogen atoms on the (0 0 1) surface of silicon: A comparative scanning tunnelling microscopy study of surface species with a single dangling bond

We present a comparative scanning tunnelling microscopy (STM) study of two features on the Si(0 0 1) surface with a single dangling bond. One feature is the Si-P heterodimer—a single surface phosphorus atom substituted for one Si atom of a Si-Si dimer. The other feature is the Si-Si-H hemihydride—a single hydrogen atom adsorbed to one Si atom of a Si-Si dimer. Previous STM studies of both surface species have reported a nearly identical appearance in STM which has hampered an experimental distinction between them to date. Using voltage-dependent STM we are able to distinguish and identify both heterodimer and hemihydride on the Si(0 0 1) surface. This work is particularly relevant for the fabrication of atomic-scale Si:P devices by STM lithography on the hydrogen terminated Si(0 0 1):H surface, where it is important to monitor the distribution of single P dopants in the surface. Based on the experimental identification, we study the lateral P diffusion out of nanoscale reservoirs prepared by STM lithography.     

Non-contact atomic force microscopy studies of (2 × 4) InP(0 0 1) surface

A sputter-cleaned indium-rich (2 × 4) InP(0 0 1) surface was investigated by non-contact scanning atomic force microscopy (NCAFM). Atomically-resolved images of the surface exhibit two different patterns. The patterns can be interpreted within the mixed dimer model of (2 × 4) reconstructed InP(0 0 1) surface. It is shown that due to contrast formation mechanism in NCAFM the features resolved are in close correspondence to scanning tunnelling microscopy (STM) data. Due to chemical interaction a P-terminated tip gives the image similar to an empty-state STM image, whereas an In-terminated tip gives the image resembling a filled-state STM one. Moreover, it is shown that due to dipole-dipole interaction, NCAFM can be sensitive to orientation of In-P dimers.     

Step flow observed on top of oxidized CoAl(1 0 0) surface

Clean and oxidized surfaces of CoAl(1 0 0) were investigated by Auger electron spectroscopy (AES), low energy electron diffraction (LEED), high resolution electron energy loss spectroscopy (HREELS), and scanning tunnelling microscopy (STM). The regrowth or step flow of terraces was observed at 1150 K. The correlation between the growth of oxide and the step flow on the CoAl(1 0 0) surface is discussed in this paper.