Controllable growth and characterizations of hybrid spiral-like atomically thin molybdenum disulfide

Monolayer MoS₂ is an emerging two-dimensional semiconductor with wide-ranging potential applications in novel electronic and optoelectronic devices. Here, we reported controlled vapor phase growth of hybrid spiral-like MoS₂ crystals investigated by multiple means of X-Ray photoemission spectroscopy, scanning electron microscopy, atomic force microscopy, kelvin probe force microscopy, Raman and Photoluminescence techniques. Morphological characterizations reveal an intriguing hybrid spiral-like MoS₂ feature whose lower planes are AB Bernal stacking and upper structure is spiral. We ascribe the hybrid spiral-like structure to a screw dislocation drive growth mechanism owing to lower supersaturation and layer-by-layer growth mode. In addition, the electrostatic properties of MoS₂ microflakes with hybrid spiral structures are obvious inhomogeneous and dependent on morphology manifested by kelvin probe force microscopy. Our work deepens the understanding of growth mechanisms of CVD-grown MoS₂, which is also adoptable to other TMDC materials.     

Manipulating the Exciton Dynamics in a MoS2/WS2 Heterobilayer with a Si/Au Nanocavity

Manipulating the exciton dynamics in a heterobilayer (HB) composed of two transition metal dichalcogenides (TMDCs) is important in the development of photonic/plasmonic devices based on TMDC HBs. Here, the realization of such a manipulation in a MoS₂/WS₂ HB is reported by using a Si/Au hybrid nanocavity composed of a Si nanoparticle and an Au film, which is manifested in the modification in the photoluminescence (PL) of the embedded MoS₂/WS₂ HB. It is shown that a transition from PL quenching to PL enhancement can be achieved by adjusting the diameter of the Si nanoparticle, which modifies the plasmon resonance supported by the Si/Au nanocavity. More interestingly, it is demonstrated that the enhancement factor can be manipulated by shifting the exciton/trion resonance close to or far away from the plasmon resonance by simply increasing the laser power. It is revealed that the manipulation is realized by effectively controlling the strain and Purcell effects induced by the Si/Au nanocavity. A PL enhancement factor as large as ≈187 in the MoS₂/WS₂ HB at a high laser power is observed. The findings suggest the potential applications of dielectric-metal hybrid nanocavities in the manipulation of the exciton dynamics in TMDC HBs and the development of novel plasmonic devices.     

Dzyaloshinskii–Moriya interactions and magnetic texture in Fe films deposited on transition‐metal dichalcogenides

The magnetic properties of materials based on two‐dimensional transition‐metal dichalcogenides (TMDC), namely bulk Fe_1/4TaS₂ compound as well as TMDC monolayers with deposited Fe films, have been investigated by means of first‐principles DFT calculations. Changing the structure and the composition of these two‐dimensional systems resulted in considerable variations of their physical properties. For the considered systems the Dzyaloshinskii– Moriya (DM) interaction has been determined and used for the subsequent investigation of their magnetic structure using Monte Carlo simulations. Rather strong DM interactions as well as large | D ₀₁|J₀₁ ratios have been obtained in some of these materials, which can lead to the formation of skyrmionic structures varying with the strength of the applied external magnetic field. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Enhanced Exfoliation Effect of Solid Auxiliary Agent On the Synthesis of Biofunctionalized MoS2 Using Grindstone Chemistry

Mass production and commercial availability are prerequisites for the viability and wide application of MoS₂. Here, we demonstrate enhanced grindstone chemistry for a one‐step synthesis of biofunctionalized MoS₂. By adding a SiO₂ auxiliary agent the exfoliation efficiency increases from 16.23% to 58.59% and a rapid and high‐yield exfoliation of MoS₂ is seen. SiO₂ exhibits a fragmentation effect, which reduces the lateral size and facilitates the exfoliation of MoS₂, thus inducing a high‐efficient paradigm in the top‐down fabrication of biofunctionalized MoS₂ nanosheets. The as‐prepared MoS₂‐chitosan (MoS₂‐CS) nanosheets display complete disaggregation and homogeneous dispersion, as well as a high content of chitosan (ca. 20 wt%). As a proof‐of‐concept application, the MoS₂‐CS nanosheets act as a biosorbent for Pb^II removal, exhibiting a good adsorption capacity and recyclability. This green and facile enhanced grindstone chemistry with minimal use of organic solvents and high‐throughput efficiency can be extended to the fabrication of other biocompatible inorganic 2D analogues for a variety of applications.     

Optically probing the interaction between monolayer MoS<Subscript>2</Subscript> and single-wall carbon nanotube

Owing to outstandingly tunable optoelectronic properties, hybrid materials consisting of atomic scale thickness of two dimensional (2D) transition metal dichalcogenides (TMDs) and one dimensional (1D) nanowires have been attracting steady interests over the last several years. In this research for the first time we report optically probing the interaction between monolayer MoS₂ and single-wall carbon nanotube (SWCNT). By using Raman and photoluminescence measurements, we found the charge transfer between MoS₂ and SWCNT is sensitive to the intensity of light field. We also demonstrate that SWCNT acts as p-type dopants at physical contact with monolayer MoS₂. Our study gives new insight into the interaction between monolayer MoS₂ and SWCNT, which may allow new phenomena and ideas for novel low dimensional hybrid materials.     

The origins of fast segmental dynamics in 2 nm thin confined polymer films

Molecular-Dynamics computer simulations were used to study 2 nm wide polystyrene films confined in slit pores, defined by inorganic crystalline surfaces. The simulated systems mimic experimentally studied hybrid materials, where polystyrene is intercalated between mica-type, atomically smooth, crystalline layers. A comparison between the experimental findings and the simulation results aims at revealing the molecular origins of the macroscopically observed behavior, and thus provide insight about polymers in severe/nanoscopic confinements, as well as polymers in the immediate vicinity of solid surfaces. Pronounced dynamic inhomogeneities are found across the 2 nm thin film, with fast relaxing moieties located in low local density regions throughout the film. The origins of this behavior are traced to the confinement-induced density inhomogeneities, which are stabilized over extended time scales by the solid surfaces. Received 9 August 2001 and Received in final form 7 January 2002     

Reduction of low‐frequency noise in multilayer MoS2 FETs using a Fermi‐level depinning layer

Two‐dimensional transition metal dichalcogenides (TMDCs) are potential candidate materials for future thin‐film field effect transistors (FETs). However, many aspects of this device must be optimized for practical applications. In addition, low‐frequency noise that limits the design window of electronic devices, in general, must be minimized for TMD‐based FETs. In this study, the low‐frequency noise characteristics of multilayer molybdenum disulphide (MoS₂) FETs were investigated in detail, with two different contact structures: titanium (Ti) metal–MoS₂ channel and Ti metal–TiO₂ interlayer–MoS₂ channel. The results showed that the noise level of the device with a TiO₂ interlayer reduced by one order of magnitude compared with the device without the TiO₂ interlayer. This substantial improvement in the noise characteristics could be explained using the carrier number of fluctuation model. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Robust Fabrication of Quantum Dots on Few‐Layer MoS2 by Soft Hydrogen Plasma and Post‐Annealing

Apart from unique properties of layered transition‐metal dichalcogenide nanosheets like MoS₂, quantum dots (QDs) from these layered materials promise novel science and applications due to their quantum confinement effect. However, the reported fabrication techniques for such QDs all involve the use of liquid organic solvents and the final material extraction from such liquid dispersions. Here a novel and convenient dry method for the synthesis of MoS₂ quantum dots interspersed on few‐layer MoS₂ using soft hydrogen plasma treatment followed by post‐annealing is demonstrated. The size of MoS₂ nanodots can be well controlled by adjusting the working pressure of hydrogen plasma and post‐thermal annealing. This method relies on the cumulative hydrogen ion bombardment effect which can destroy the hexagonal structure of the top MoS₂ layer and disintegrate the top layer into MoS₂ nanodots and even QDs. Post‐thermal annealing can further reduce the size. Such MoS₂ quantum dots interspersed on few‐layer MoS₂ exhibit two new photoluminescence peaks at around 575 nm because of the quantum confinement effect. This dry method is versatile, scalable, and compatible with the semiconductor manufacturing processes, and can be extended to other layered materials for applications in hydrogen evolution reaction, catalysis, and energy devices.     

Hydrogen on hybrid MoS2/graphene nanostructures

Transition metal dichalcogenides are rising candidates for the replacement of Pt catalysts in water splitting. In this theoretical study we focus on the hydrogen evolution reaction part of this process and on how hydrogen (H) interacts with MoS₂ nanostructures, free‐standing or positioned on a graphene substrate. Density functional theory calculations confirm the stability of such nanostructures and our results for H on several configurations, from 2D infinite monolayers to quasi‐1D MoS₂ ribbons and quasi‐0D MoS₂ flakes, are presented. We calculate the adsorption energy of H atoms on various sites of the MoS₂ nanostructures, notably at Mo and S active edges. Comparing free‐standing and MoS₂/graphene hybrid systems we find that the effect of the support on the adsorption of H on MoS₂ nanostructures is quite significant when the substrate induces strain. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Low‐temperature photoluminescence of oxide‐covered single‐layer MoS2

We present a photoluminescence study of single‐layer MoS₂ flakes on SiO₂ surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS₂, which varies by up to 25 meV between individual flakes, can be homogenized by annealing in vacuum. We use HfO₂ and Al₂O₃ layers prepared by atomic layer deposition to cover some of our flakes. In these flakes, we observe a suppression of the low‐energy luminescence peak which appears in asprepared flakes at low temperatures. We infer that this peak originates from excitons bound to surface adsorbates. We also observe different temperature‐induced shifts of the luminescence peaks for the oxide‐covered flakes. This effect stems from the different thermal expansion coefficients of the oxide layers and the MoS₂ flakes. It indicates that the single‐layer MoS₂ flakes strongly adhere to the oxide layers and are therefore strained. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Emission properties of sequentially deposited ultrathin CH3NH3PbI3/MoS2 heterostructures

Hybrid organic-inorganic perovskite materials have obtained considerable attention due to their exotic optoelectronic properties and extraordinarily high performance in photovoltaic devices. Herein, we successively converted the ultrathin PbI₂/MoS₂ into the CH₃NH₃PbI₃/MoS₂ heterostructures via CH₃NH₃I vapor processing. Atomic force microscopy (AFM)、Scanning electron microscopy (SEM) and X-ray photoemission spectroscopy (XPS) measurements prove the high-quality of the converted CH₃NH₃PbI₃/MoS₂. Both MoS₂ and CH₃NH₃PbI₃ related photoluminescence (PL) intensity quenching in CH₃NH₃PbI₃/MoS₂ implies a Type-II energy level alignment at the interface. Temperature-dependent PL measurements show that the emission peak position shifting trend of CH₃NH₃PbI₃ is opposite to that of MoS₂ (traditional semiconductors) due to the thermal expansion and electron-phonon coupling effects. The CH₃NH₃PbI₃/TMDC heterostructures are useful in fabricating innovative devices for wider optoelectronic applications.     

Growth of SrTiO3 on Si(001) by hybrid molecular beam epitaxy

We report the heteroepitaxial growth of SrTiO₃ thin films on Si(001) by hybrid molecular beam epitaxy (hMBE). Here, elemental strontium and the metal‐organic precursor titanium tetraisopropoxide (TTIP) were co‐supplied in the absence of additional oxygen. The carbonization of pristine Si surfaces during native oxide removal was avoided by freshly evaporating Sr into the hMBE reactor prior to loading samples. Nucleation, growth and crystallization behavior as well a structural properties and film surfaces were characterized for a series of 46‐nm‐thick SrTiO₃ films grown with varying Sr to TTIP fluxes to study the effect of non‐stoichiometric growth conditions on film lattice parameter and surface morphology. High quality SrTiO₃ thin films with epitaxial relationship (001)SrTiO₃ || (001)Si and [110]SrTiO₃ || [100]Si were demonstrated with an amorphous layer of around 4 nm thickness formed at the SrTiO₃/Si interface. The successful growth of high quality SrTiO₃ thin films with atomically smooth surfaces using a thin film technique with scalable growth rates provides a promising route towards heterogeneous integration of functional oxides on Si. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

MoO2@MoS2 Nanoarchitectures for High‐Loading Advanced Lithium‐Ion Battery Anodes

The capacity loading per unit area is of importance as specific capacity while evaluating the lithium‐ion battery anode. However, the low conductivity of several advanced anode materials (such as molybdenum sulfide, MoS₂) prohibits the wide application of materials. Nanostructural engineering becomes a key to overcome the obstacles. A one‐step in situ conversion reaction is employed to synthesize molybdenum oxide (MoO₂)–MoS₂ core–shell nanoarchitectures (MoO₂@MoS₂) by partially sulfiding MoO₂ into MoS₂ using sulfur. The MoO₂@MoS₂ displays a 3D architecture constructed by hundreds of MoS₂ ultrathin sheets with several layers arranged and fixed to an MoO₂ particle vertically with the size in the range of 200–500 nm. MoO₂ acts as the molybdenum source for the synthesis of MoS₂, as well as the conductive substrate. The designed 3D architectures with empty space between MoS₂ layers can prevent the damage originated from volume change of MoS₂ undergoing charge/discharge process. The lithium storage capacities of the MoO₂@MoS₂ 3D architectures are higher and the stability has been significantly improved compared to pure MoS₂. 4 mAh cm^?2 capacity loading of MoO₂@MoS₂ has been achieved with a specific capacity of more than 1000 mAh g^?1.     

Ab initio study of adsorption behaviors of molecular adsorbates on the surface and at the edge of MoS2

Two dimensional (2D) semiconducting materials such as MoS₂ have been actively investigated for their applications in nanodevices and gas sensors (or detectors). In this connection, we have investigated atomic and electronic structures of specific adsorbates on the surface of MoS₂ and the edge of MoS₂ armchair nanoribbons (ANRs) using density functional theory (DFT) calculations. Our calculations reveal that molecular adsorbates are well adsorbed at the edge of MoS₂ than on the surface of MoS₂. Despite the weak van der Waals (vdW) interaction between molecular adsorbates and MoS₂ surface, paramagnetic molecules such as NO and NO₂ induce the reduced band gap in MoS₂ by making the states within the bandgap. On the other hand, adsorbed CO, NO, NO₂, and O₂ at the edge of MoS₂ ANRs have much influence on the band structures of MoS₂ ANRs via dissociation into their constituent atoms, while adsorbed CO₂, NH₃, H₂, and N₂ at the edge of MoS₂ ANRs do not much change the band structure of MoS₂ ANRs due to no dissociation. Further, we identify that dissociated molecules rearrange the charge densities of MoS₂ ANRs by making the states within the bandgap.     

Surface passivation of phosphorus‐diffused n+‐type emitters by plasma‐assisted atomic‐layer deposited Al2O3

In recent years Al₂O₃ has received tremendous interest in the photovoltaic community for the application as surface passivation layer for crystalline silicon. Especially p‐type c‐Si surfaces are very effectively passivated by Al₂O₃, including p‐type emitters, due to the high fixed negative charge in the Al₂O₃ film. In this Letter we show that Al₂O₃ prepared by plasma‐assisted atomic layer deposition (ALD) can actually provide a good level of surface passivation for highly doped n‐type emitters in the range of 10–100 Ω/sq with implied‐V_oc values up to 680 mV. For n‐type emitters in the range of 100–200 Ω/sq the implied‐V_oc drops to a value of 600 mV for a 200 Ω/sq emitter, indicating a decreased level of surface passivation. For even lighter doped n‐type surfaces the passivation quality increases again to implied‐V_oc values well above 700 mV. Hence, the results presented here indicate that within a certain doping range, highly doped n‐ and p‐type surfaces can be passivated simultaneously by Al₂O₃. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Fracture‐induced nanoscrolls from CVD‐grown monolayer molybdenum disulfide

We report a simple and effective way of fabricating molybdenum disulfide (MoS₂) nanoscrolls by self‐rolling up fractured monolayer CVD‐grown MoS₂ microflakes. Morphological results reveal that MoS₂ nanoscrolls are formed only at newly formed edges, owing to an orientation‐specific fracture behavior. Using Raman spectroscopy, we show that the E¹_2g Raman peak (A_1g peak) for MoS₂ nanoscrolls significantly red‐shifts (blue‐shifts), indicating structural change. The proposed mechanism is that the newly formed edges induced by fracture behavior self‐roll up to nanoscrolls to minimize the surface free energy, meanwhile, the serious lattice contradiction of upper sulfur plane controls the rolling directions. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Growth induced anisotropy of cobalt in cobalt/organic semiconductor films

We present the study of Co/organic semiconductor (OS) stacks both from the morphological and magnetic point of view. Co has been successfully used up to now as top contact of hybrid vertical devices. While the properties of Co grown on amorphous layers are well established, its deposition on soft materials presents critical aspects such as interfacial damage that affects its electrical and magnetic properties. In this work we focus on the influence of the morphology of the organic underlayer in the magnetic behavior of a Co thin film: tris(8-hydroxyquinoline) aluminum (Alq₃) grown in different conditions by molecular beam evaporation have been considered. A further considered aspect is the effect of the presence of a thin oxide barrier (Al₂O₃) on the Co magnetic properties.     

Effect of precursor on growth and morphology of MoS2 monolayer and multilayer

The rise of two-dimensional (2D) material is one of the results of successful efforts of researchers which laid the path to the new era of electronics. One of the most exciting materials is MoS₂. Synthesis has been always a major issue as electronic devices need reproducibility along with similar properties for mass productions. Chemical vapor deposition (CVD) is one of the successful methods for 2D materials including graphene. Furthermore, the choice of starting materials for Mo and S source is crucial. The different source has different effects on the layers and morphology of MoS₂ films. In this work, we have extensively studied the CVD technique to grow few layers of MoS₂ with two precursors MoO₃ and MoCl₅, show remarkable changes. The MoO₃ source gives a triangular shaped MoS₂ monolayer while that of MoCl₅ can achieve uniform MoS₂ without triangle. The absence of geometric shapes with MoCl₅ is poorly understood. We tried to explain with MoCl₅ precursor, the formation of continuous monolayer of MoS₂ without any triangle on the basis of chemical reaction formalism mostly due to one step reaction process and formation of MoS₂ from gas phase to the solid phase. The film synthesized by MoCl₅ is more continuous and it would be a good choice for device applications.     

Electronic structure calculations for inhomogeneous systems: Interfaces,surfaces, and nanocontacts

The article gives an introduction into the application of density functional theory (DFT) to inhomogeneous systems. To begin with, we describe the interplay of specific materials at interfaces, resulting in structure relaxation and modifications of the chemical bonding. We address interfaces between YBa₂Cu₃O₇ and a normal metal, in order to quantify the intrinsic interface charge transfer into the superconductor. Moreover, we study the internal interfaces in a V₆O₁₃ battery cathode and the effects of ion incorporation during the charging and discharging process. The second part of the article deals with the influence of surfaces on the nearby electronic states. Here, we investigate a LaAlO₃/SrTiO₃ heterostructure in a thin film geometry. We particularly explain the experimental dependence of the electronic states at the heterointerface on the surface layer thickness. Afterwards, surface relaxations are studied for both the clean Ge(001) surface and for self‐assembled Pt nanowires on Ge(001). In the third part, we turn to atomic and molecular contacts. We compare the properties of prototypical Al nanocontact geometries, aiming at insight into the chemical bonding and the occupation of the atomic orbitals. Finally, the local electronic structure of a benzene‐1,4‐dithiol molecule between two Au electrodes is discussed as an example for a molecular bridge.     

One‐Pot Synthesis of Algae‐Like MoS2/PPy Nanocomposite: A Synergistic Catalyst with Superior Peroxidase‐Like Catalytic Activity for H2O2 Detection

A facile one‐pot synthetic route is reported to prepare algae‐like molybdenum disulfide/polypyrrole (MoS₂/PPy) nanocomposite through a redox reaction between ammonium tetrathiomolybdate and pyrrole monomer under a hydrothermal condition without any other templates. The as‐prepared unique algae‐like MoS₂/PPy nanocomposites are composed of few layer MoS₂ nanosheets, which are covered with PPy. Structural and morphological characterizations of this unique nanocomposite are investigated by Fourier‐transform infrared spectra, Raman spectra, X‐ray diffraction pattern, X‐ray photoelectron spectra, energy‐dispersive X‐ray spectroscopy, and transmission electron microscopy. The as‐prepared MoS₂/PPy nanocomposites exhibit an excellent peroxidase‐like catalytic activity toward the oxidation of 3,3,5,5‐tetramethylbenzidine (TMB) in the presence of hydrogen peroxide (H₂O₂) in acetate buffer solution (pH 4.0), which provides a facile strategy for the colorimetric detection of H₂O₂ with a high sensitivity.