Organic magnetoresistance and spin diffusion in organic semiconductor thin film devices

We review recent work in the field of organic spintronics, focusing on our own contributions to this field. There are two principle magnetoresistance effects that occur in organic devices. (i) Organic magnetoresistance (OMAR), which occurs in nonmagnetic organic semiconductor devices. For example, in devices made from the prototypical small molecule Alq₃ OMAR reaches values of 10% or more at room temperature. (ii) Organic spin‐valve effects that occur in devices that employ ferromagnetic electrodes for spin‐polarized current injection and detection. We undertake an analysis of these two types of magnetoresistance with the goal of identifying the dominant spin‐scattering mechanism. Analysis of OMAR reveals that hyperfine coupling is the dominant spin‐coupling mechanism. Spin–orbit coupling, on the other hand, is important only in organic semiconductor materials containing heavy atoms. We explore the reasons why spin–orbit coupling is relatively unimportant in hydrocarbon materials. Next, we present a theory for spin diffusion in disordered organic semiconductors based on hyperfine coupling, taking into account a combination of incoherent carrier hopping and coherent spin precession in the random hyperfine magnetic fields. We compare our findings with experimental values for the spin‐diffusion length. Finally, we demonstrate a criterion that allows the determination whether the organic spin‐valves operate in the tunneling or injection regimes. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Defect‐induced ferrimagnetism in the half‐metallic Co2CrAl and Co2CrSi compounds

Co₂CrAl and Co₂CrSi are amongst the most studied Heusler alloys due to their half‐metallic character. These compounds are also well‐known to present ferromagnetism with high Curie temperatures. We show using first‐principles calculations that the creation of Cr antisites (Cr atoms at the Co sites) induces ferrimagnetism in these compounds without destroying the half‐metallic character of these alloys. The reduction of the total spin moment causes lower external fields and thus smaller energy losses in realistic magnetoelectronic, also known as spintronic, devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

自旋玻璃的重入行为及CoxZn1-x(FeyCr1-y)2O4尖晶石系统的磁相图

本文研究了Co_xZn_1-x(Fe_yCr_1-x2O₄尖晶石系统的磁性,测量了不同成份样品的低频弱场交流磁化率与低场直流磁化强度的温度关系。根据实验结果,给出了该系统可能的磁相图。发现在该系统中相当宽的成份范围内,都存在自旋玻璃的重入现象。同时发现,自旋玻璃的重入温度随磁性离子浓度增加而增加。这些行为是磁性离子浓度含量较高和多种磁性离子共存系统的共同特性。还讨论了自旋玻璃重入行为 关键词：     

A High‐Performance Anode Material for Li‐Ion Batteries Based on a Vertically Aligned CNTs/NiCo2O4 Core/Shell Structure

3D vertically aligned carbon nanotubes (CNTs)/NiCo₂O₄ core/shell structures are successfully synthesized as binder‐free anode materials for Li‐ion batteries (LIBs) via a facile electrochemical deposition method followed by subsequent annealing in air. The vertically aligned CNTs/NiCo₂O₄ core/shell structures are used as binder‐free anode materials for LIBs and exhibit high and stable reversible capacity (1147.6 mAhg^?1 at 100 mAg^?1), excellent rate capability (712.9 mAh g^?1 at 1000 mAg^?1), and good cycle stability (no capacity fading over 200 cycles). The improved performance of these LIBs is attributed to the unique 3D vertically aligned CNTs/NiCo₂O₄ core/shell structures, which support high electron conductivity, fast ion/electron transport in the electrode and at the electrolyte/electrode interface, and accommodate the volume change during cycling. Furthermore, the synthetic strategy presented can be easily extended to fabricate other metal oxides with a controlled core/shell structure, which may be a promising electrode material for high‐performance LIBs.     

Composition dependent self‐regenerative property of perovskite‐type oxides

The self‐regenerative property of LaCo_{1–x –y}Pd_x Zn_y O_3±δ and LaFe_{1–x –y}Pd_x Zn_y O_3±δ solid solutions with monometallic Pd or bimetallic Pd/Zn substituents for Co or Fe is studied under a redox cycle by high angular annular dark‐field scanning transmission electron microscopy (STEM‐HAADF) and energy dispersive X‐ray spectroscopy (EDX) and X‐ray diffraction (XRD). These results reveal that the composition of perovskites determines the self‐regenerative property that occurs largely in LaCo_{1–x –y}Pd_x Zn_y O_3±δ but is limited greatly in LaFe_{1–x –y}Pd_x Zn_y O_3±δ. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

First‐principles study on the concentrations of native point defects in high‐dielectric‐constant binary oxide materials

The intrinsic concentrations of point defects in high‐k binary oxide materials of HfO₂, ZrO₂, Y₂O₃ and La₂O₃ are evaluated on the basis of first‐principles calculations. Oxygen defects are found to dominate over a wide range of the oxygen chemical potential. Neutral oxygen vacancies are likely to be responsible for electron trapping in the investigated materials. In HfO₂ and ZrO₂, oxygen Frenkel pairs are likely to form. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photo-induced effect in the layered perovskite manganite La<Subscript>1.2</Subscript>Sr<Subscript>1.8</Subscript>Mn<Subscript>1.8</Subscript>Co<Subscript>0.2</Subscript>O<Subscript>7</Subscript>

It is helpful to study the photo-induced effect in the perovskite manganites not only for elucidating the mechanism of colossal magnetoresistance (CMR) effect but also for potential applications in technology. The laser-induced effect in the Co doping layered perovskite manganites La_1.2Sr_1.8Mn_1.8Co_0.2O₇, is studied in this paper and the obtained results are also compared with that gained in the Nd-doping manganites with cubic perovskite structure.     

Formation of three-dimensional arrays of magnetic clusters NiO,Co<Subscript>3</Subscript>O<Subscript>4</Subscript>, and NiCo<Subscript>2</Subscript>O<Subscript>4</Subscript> by the matrix method

A method has been proposed for the formation of three-dimensional arrays of isolated magnetic clusters NiO, Co₃O₄, and NiCo₂O₄ in the sublattice of pores in the matrix of bulk synthetic opals through a single impregnation of the pores with melts of nickel and cobalt nitrate crystal hydrates and their thermal degradation. The method makes it possible to controllably vary the degree of filling of pores in the matrix with oxides within 10–70 vol %. The composition and structure of the synthesized materials, as well as the dependences of their static magnetic susceptibility on the magnetic field strength, have been investigated.     

Spin Hall magnetoresistance in Nb/Y3Fe5O12 hybrids

We investigate the spin Hall magnetoresistance (SMR) in niobium (Nb) attached to Y₃Fe₅O₁₂ near the superconducting critical temperature (T_c) of Nb. The SMR vanishes after cooling the sample below T_c, and recovers if the temperature is raised. When a magnetic field larger than the critical field of Nb is applied, the SMR re‐emerges with an enhanced magnitude even if the temperature is below T_c. The experimental results demonstrate that the SMR could be completely suppressed by the coupling between superconducting condensation and spin–orbit interaction in superconductors. In addition to the fundamental physics on the charge–spin interactions in superconductors, our work adds a different dimension to superconducting spintronics. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Exchange‐Biased Fe3−xO4‐CoO Granular Composites of Different Morphologies Prepared by Seed‐Mediated Growth in Polyol: From Core–Shell to Multicore Embedded Structures

Magnetically contrasted granular hetero‐nanostructures are prepared by seed‐mediated growth in polyol, properly combining two oxide phases with different magnetic order, ferrimagnetic (F) partially oxidized magnetite Fe_3−xO₄ and antiferromagnetic (AF) cobalt oxide. Spinel Fe_3−xO₄ nanoparticles are first synthesized and then used as seeds for rock salt CoO nanocrystals growth. Three different hetero‐nanostructure designs are realized, acting on the content ratio between the seeds and the deposit's precursors during the synthesis. For all of them, the spinel and the rock salt phases are confirmed by X‐ray diffraction and high‐resolution transmission electron microscopy. Both phases are obtained in high‐crystalline quality with a net epitaxial relationship between the two crystallographic lattices. Mössbauer spectrometry confirms the cobalt cation diffusion into the spinel seeds, giving favorable chemical interfacing with the rock salt deposit, thus prevailing its heterogeneous nucleation and consequently offering the best condition for exchange‐bias (EB) onset. Magnetic measurements confirm EB features. The overall magnetic properties are found to be a complex interplay between dipolar interactions, exchange anisotropy at the F/AF interface, and magnetocrystalline anisotropy enhancement in the F phase, due to Co²⁺ diffusion into iron oxide's crystalline lattice. These results underline the powerfulness of colloidal chemistry for functional granular hetero‐nanostructured material processing.     

Magnetoelectric oxide films for spin manipulation in graphene

The challenge of creating a graphene spin field effect transistor (spin‐FET) demands a magnetic gate dielectric material whose magnetization can be switched electrically. We have grown films of Cr₂O₃ on top of graphite and graphene by pulsed laser deposition that shows this crucial functionality. We demonstrate that the Cr₂O₃ films are magnetoelectric by poling them in combined electric and magnetic fields and then using magnetic force microscopy to observe spontaneous surface domain structure as a function of poling field. In addition, we show that the electric field created by a conducting AFM tip can be used to write magnetic patterns in the film that demonstrate the kind of continuous magnetoelectric control needed for a prototype spin‐FET. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Influence of the preparation method on the morphology of templated NiCo<Subscript>2</Subscript>O<Subscript>4</Subscript> spinel

The synthesis of NiCo₂O₄ spinel by several nanocasting strategies (i.e., multi-step nanocasting, one-step nanocasting and soft-templating), in which nickel and cobalt nitrates are used as precursors and Pluronic P123 as surfactant, is explored. First, in the multi-step nanocasting, the effect of the impregnation method (evaporation, solid–liquid and two-solvent) of the SBA-15 silica template on the morphology of NiCo₂O₄ replica is investigated. The evaporation method seems to be the best choice to obtain mesoporous NiCo₂O₄ powder which, after calcination at 375 °C and subsequent template removal, displays the highest surface area (93.1 m²/g). We have also checked the feasibility of the one-step nanoscating approach for the synthesis of ordered NiCo₂O₄ arrays, though this methodology entails severe difficulties, mainly related to the different decomposition temperature of the nitrate precursors and the P123 surfactant. Finally, randomly oriented, aggregated NiCo₂O₄ nanoparticles are obtained by means of P123 surfactant-assisted soft-templating approach.     

Magnetoresistance in dilute p‐Si/SiGe in parallel and tilted magnetic fields

We report the results of an experimental study of the magnetoresistance ρ_xx and ρ_xy in two samples of p‐Si/SiGe with low carrier concentrations p = 8.2 × 10¹⁰ cm^‐2 and p = 2 × 10¹¹ cm^‐2. The research was performed in the temperature range of 0.3–2 K and in the magnetic fields of up to 18 T, parallel or tilted with respect to the two‐dimensional (2D) channel plane. The large in‐plane magnetoresistance can be explained by the influence of the in‐plane magnetic field on the orbital motion of the charge carriers in the quasi‐2D system. The measurements of ρ_xx and ρ_xy in the tilted magnetic field showed that the anomaly in ρ_xx, observed at filling factor ν = 3/2 is practically nonexistent in the conductivity σ_xx. The anomaly in σ_xx at ν = 2 might be explained by overlapping of the levels with different spins 0 ↑ and 1 ↓ when the tilt angle of the applied magnetic field is changed. The dependence of g‐factor g^*(Θ)/g^*(0⁰) on the tilt angle Θ was determined.     

Cation defects and conductivity in transparent oxides

High quality doped zinc oxide and mixed transition metal spinel oxide films have been deposited by means of sputter deposition from metal and metal oxide targets, and by spin casting from aqueous or alcoholic precursor solutions. Deposition conditions and post-deposition processing are found to alter cation oxidation states and their distributions in both oxide materials resulting in marked changes to both optical transmission and electrical response. For ZnO, partial reduction of the neat or doped material by hydrogen treatment of the heated film or by electrochemical processing renders the oxide n-type conducting. Continued reduction was found to diminish conductivity. In contrast, oxidation of the infrared transparent p-type spinel conductors typified by NiCo₂O₄ was found to increase conductivity. The disparate behavior of these two materials is caused, in part, by the sign of the charge carrier and by the existence of two different charge transport mechanisms that are identified as free carrier conduction and polaron hopping. While much work has been reported concerning structure/property relationships in the free carrier conducting oxides, there is a significantly smaller body of information on transparent polaron conductors. In this paper, we identify key parameters that promote conductivity in mixed metal spinel oxides and compare their behavior with that of the free carrier TCO’s. PACS 61.72.C.; 71.38.-k; 81.15.-z; 77.84.Bw; 73.61.-r     

First-principles study of antiferromagnetic cobalt spinels

We report a comparative study of the electronic structure and magnetic properties of two cobalt compounds Co₃O₄ and Co₃S₄, through first-principles Hubbard-U calculations. Our results indicate that Co₃O₄ and Co₃S₄ have similarities in crystal structure (normal spinel), magnetic order (antiferromagnetism), Co spin configuration (high spin Co²⁺ and low spin Co³⁺), and comparable band-gap energy. However, the U-dependence on electronic structure in two materials are different from each other. With a change in the applied U values, the band dispersion and the type of band gap are significantly changed in Co₃O₄, while the band-gap energy only is affected in Co₃S₄.     

Highly stable amorphous indium‐zinc‐oxide thin‐film transistors with back‐channel wet‐etch process

The stabilities of amorphous indium‐zinc‐oxide (IZO) thin film transistors (TFTs) with back‐channel‐etch (BCE) structure are investigated. A molybdenum (Mo) source/drain electrode was deposited on an IZO layer and patterned by hydrogen peroxide (H₂O₂)‐based etchants. Then, after etching the Mo layer, SF₆ plasma with direct plasma mode was employed and optimized to improve the bias stress stability. Scanning electron microscopy and X‐ray photoelectron spectroscopic analysis revealed that the etching residues were removed efficiently by the plasma treatment. The modified BCE‐ TFTs showed only threshold voltage shifts of 0.25 V and –0.20 V under positive/negative bias thermal stress (P/NBTS, V_GS = ±30 V, V_DS = 0 V and T = 60 °C) after 12 hours, respectively. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Spin‐dependent‐magnetoresistance control by regulation of heat treatment temperature for magnetite nano‐particle sinter

The control of spin‐dependent‐magnetoresistance by regulation of the heat treatment (HT) temperature for magnetite (Fe₃O₃) nano‐particle sinter (MNPS) has been studied. The average nano‐particle size in the MNPS is 30nm and the HT was carried out from 400°C to 800°C. The HT of the MNPS varies the coupling form between adjacent magnetite nano‐particles and the crystallinity of that. The measurements on electrical resistance (ER), magnetoresistance (MR) and magnetization were performed between 4K and 300K. The behavior of the ER and MR considerably changes at the HT temperature of ～600°C. Below ～600°C the ER indicates the variable‐range‐hopping conduction behavior and the MR shows the large intensity in a wide temperature region. Above ～600°C the ER shows the indication of the Verwey transition near 110K like a bulk single crystal and the MR designates the smaller intensity. We consider that below ～600°C the ER and MR are dominated by the grain‐boundary conduction and above ～600°C those are determined by the inter‐grain conduction. The magnetic field application to the grain‐boundary region is inferred to cause the large enhancement of the MR.     

Tunneling magnetoresistance in Fe-oxide film

We fabricate Fe/Fe oxide granular film by DC sputtering and study the magnetic and transport properties in the insulator region. X-ray photoelectron spectroscopy and transmission electron microscopy confirm the coexistence of iron and Fe₂O₃. Accompanied with the nonlinear I-V curve and magnetic measurement, we investigate mechanism of sizable magnetoresistance in detail and found the spin in the interface has crucial contribution to the spin tunneling process.     

Local structure around Zn and Ga in solution‐processed In–Ga–Zn–O and implications for electronic properties

We study by X‐ray absorption spectroscopy the local structure around Zn and Ga in solution‐processed In–Ga–Zn–O thin films as a function of thermal annealing. Zn and Ga environments are amorphous up to 450 °C. At 200 °C and 450 °C, the Ga atoms are in a β‐Ga₂O₃ like structure, mostly tetrahedral gallium oxide phase. Above 300 °C, the Zn atoms are in a tetrahedral ZnO phase for atoms inside the nanoclusters. The observed formation of the inorganic structure above 300 °C may be correlated to the rise of the mobility for IGZO TFTs. The Zn atoms localized at the nanocluster boundary are undercoordinated with O. Such ZnO cluster boundary could be responsible for electronic defect levels. Such defect levels were put in evidence in the upper half of the band gap. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Spin dependent resistivity in magnetic alloys and multilayers

Material dependence of the spin dependent resistivity and magnetoresistance in magnetic multilayers as well as heterogenous alloys has been studied theoretically in a two-band model, by putting emphasis on random configuration of atoms near the interfaces. When the non-magnetic atoms are on the right (left) of the magnetic atoms, e.g., Fe or Co, in the periodic table, the ratio between the spin dependent resistivity, ϱ_↓ / ϱ_↑, is greater (smaller) than 1. It is also shown that the two-band model unifies the results obtained in the tight-binding model and the Anderson model.