Effect of change in structural and magnetic states of Pt<Subscript>74.1</Subscript>Fe<Subscript>25.9</Subscript> alloy on its optical properties

The effect of atomic disordering on the optical properties of Pt_74.1Fe_25.9 alloy, whose stoichiometry is close to that of Pt₃Fe, has been investigated. The optical constants of ordered and plastically deformed alloys, which are, respectively, in the paramagnetic and ferromagnetic states, have been measured by the polarimetric method. The frequency dispersions of the permittivity, optical conductivity, and reflectivity, as well as the microscopic characteristics of conduction electrons (plasma and relaxation frequencies), have been calculated. The energy dependences of the optical conductivity are compared to the calculated energy-band structure of atomically ordered and disordered Pt₃Fe compounds.     

The conductivity of the spin-polarized two-dimensional electron gas: Exchange/correlation and strong disorder effects

The conductivity of a spin-polarized two-dimensional electron gas is calculated and compared with the conductivity of the unpolarized electron gas. Disorder effects are considered within the self-consistent current relaxation theory, which gives rise to a crossover point from metallic to insulating behavior. Many-body effects due to exchange and correlation are taken into account and are described by a local-field correction. Our calculations are in good agreement with recent experimental results on the magnetoresistance of silicon inversion layers.     

Influence of dispersed alumina particles on the transport characteristics of mechanochemically synthesized NaSn2F5

The composite solid electrolytes, NaSn₂F₅, dispersed with submicron size Al₂O₃ fillers of various concentrations and particle sizes have been synthesized through mechanochemical milling technique. X-ray diffraction and microstructure results indicate the biphasic nature of the composite materials. The transport properties of the present composite materials have been investigated by means of impedance spectroscopy, and the results show that the improvement in conductivity increases with decrease in the particle size of the filler. An enhancement in conductivity of two orders in magnitude is obtained for NaSn₂F₅ with Al₂O₃ dopant concentration of 10 mol%. The activation energy responsible for conductivity relaxation, calculated from the modulus spectra, is found to be almost the same as the value obtained from temperature variation of dc conductivity. The scaling result of the imaginary part of the modulus shows the temperature-independent relaxation behavior.     

Dielectric parameters of mesoporous sieves filled with NaNO<Subscript>2</Subscript>

This paper reports on a dielectric study of MCM-41 molecular sieves with cellular channels of different sizes filled with the NaNO₂ ferroelectric. The temperature dependences of the permittivity and electrical conductivity of sodium nitrite in cellular channels are calculated from experimental data on the permittivity and electrical conductivity of the composite. The calculations are performed using the relationships obtained for the hexagonal matrix with parallel cylindrical inclusions within pores. The observed increase in the conductivity of sodium nitrite in confined geometry at high temperatures is attributed to partial melting. It is shown that the increase in the permittivity of the composite is caused by Maxwell-Wagner relaxation processes.     

Study of thermal currents in powder β-spodumene ceramics doped with Cuo, FeO and TiO2

Ternary-phase ceramic system of Li₂O Al₂O₃ 4SiO₂ doped with CuO, FeO and TiO₂ has been prepared and subjected to dc electrical conductivity and thermally stimulated depolarization current (TSDC) measurements as a function of temperature (30-250 °C) and field strength. The electrical conductivity results are explained by assuming both ionic and electronic conduction mechanisms coexist with different contributions over the whole temperature range of experiments. TSDC spectra have been found to be characterized by a broad intense relaxation peak, which can be attributed to an ionic charge polarization. The broad relaxation transitions are apparently a result of the nonuniform nature of this process. Activation energies are calculated for both dc electrical conductivity and TSDC according to Arrhenius equation and initial rise method, respectively.     

Oxygen-vacancy-related dielectric relaxation and conduction mechanisms in Bi5TiNbWO15 ceramics

This paper reports that the intergrowth ceramics Bi5TiNbWO15 （BW-BTN） have been prepared with the conventional solid-state reaction method. The dielectric and conductivity properties of samples were studied by using the dielectric relaxation and AC impedance spectroscopy in detail. Two distinct relaxation mechanisms were detected both in the plots of dielectric loss （tanδ） and the imaginary part （Z″） versus frequency in the frequency range of 10 Hz-13 MHz. We attribute the higher frequency relaxation process to the hopping process of the oxygen vacancies inside the grains, while the other seems to be associated with the space charges bound at the grain boundary layers. The AC impedance spectroscopy indicates that the conductivities at 625 K for bulk and grain boundary are about 1.12 × 10^-2 S/m and 1.43 × 10^-3 S/m respectively. The accumulation of the space charges in the grain boundary layers induces a space charge potential of 0.52 eV.     

Dielectric relaxation and dc conductivity on the PVOH-CF3COONH4 polymer system

In the present paper, the ionic conductivity and the dielectric relaxation properties on the poly(vinyl alcohol)-CF₃COONH₄ polymer system have been investigated by means of impedance spectroscopy measurements over wide ranges of frequencies and temperatures. The electrolyte samples were prepared by solution casting technique. The temperature dependence of the sample’s conductivity was modeled by Arrhenius and Vogel-Tammann-Fulcher (VTF) equations. The highest conductivity of the electrolyte of 3.41×10^− 3 (Ωcm)^− 1 was obtained at 423 K. For these polymer system two relaxation processes are revealed in the frequency range and temperature interval of the measurements. One is the glass transition relaxation (α-relaxation) of the amorphous region at about 353 K and the other is the relaxation associated with the crystalline region at about 423 K. Dielectric relaxation has been studied using the complex electric modulus formalism. It has been observed that the conductivity relaxation in this polymer system is highly non-exponential. From the electric modulus formalism, it is concluded that the electrical relaxation mechanism is independent of temperature for the two relaxation processes, but is dependent on composition.     

Fermi energy and optical conductivity of metal quantum wires

The size dependence of the Fermi energy of conduction electrons has been analytically evaluated and its oscillations have been calculated in the framework of the cylindrical well model. The conductivity tensor components for a metal wire with the radius ρ₀ have been calculated with the use of the expansion in powers of ρ₀/λ, where λ is the wavelength of incident light. The influence of the dimension of the systems has been established by comparing the results of the calculations of the optical conductivity of thin wires and films for Au, Al, and Pb metals. According to the results of the calculations, the real and imaginary parts of the conductivity depend substantially on the size and frequency. The difference between the results obtained for Pb and Au metals has been explained by the different relaxation times of electrons in nanowires that are homogeneous in the thickness.     

Theoretical investigation of the thermoelectric transport properties of BaSi2

The full-potential linear augmented plane wave method based on density functional theory is employed to investigate the electronic structure of BaSi 2 . With the constant relaxation time and rigid band approximation,the electrical conductivity,Seebeck coefficient and figure of merit are calculated by using Boltzmann transport theory,further evaluated as a function of carrier concentration. We find that the Seebeck coefficient is more anisotropic than electrical conductivity. The figure of merit of BaSi 2 is predicted to be quite high at room temperature,implying that optimal doping may be an effective way to improve thermoelectric properties.     

Calculation of positron states in the BEDT-TFF based organic superconductors

Positron states in the BEDT-TTF based organic superconductors, namely -Cu(NCS)₂, -CuCN[N(CN)₂] and -Cu[N(CN)₂]Br salts, have been calculated using the superposedatom model and the numerical relaxation technique. For each salt positrons are distributed predominantly around the anion layers and have a little overlap with the TTF skeleton and the outer S atoms which are responsible for the conductivity.     

Influence of aluminum impurity on the electronic structure and optical properties of the TbNi5 intermetallic compound

The electronic structure of the TbNi_{5 ? x} Al _x intermetallic compounds (x = 0, 1, 2) is calculated in the local electron density approximation with the correction to strong electron correlations in 4f shell of terbium ions. Spectral properties of these compounds are measured by ellipsometry in a wavelength range of 0.22–16 μm. Frequency dependences of optical conductivity in the region of interband optical absorption are interpreted based on the results of calculations of electron densities of states. The relaxation and plasma frequencies of conduction electrons are determined.     

Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.     

Charge carrier concentration in glasses. dependence on composition

Admittance spectra of the ion conducting glasses xNa₂O(1−x)SiO₂ and xK₂O(1−x)SiO₂,(x=0,1–0,3) have been studied on small signal conditions from room temperature to 713 K. Conductivity relaxation in the bulk and space charge relaxation due to drift and diffusion near the electrodes were found in separated parts of the frequency range 10⁻⁴–10⁶ Hz. The data show Arrhenius behaviour for dc conductivity and conductivity relaxation. The determination of the charge carrier concentration is based on the analysis of the beginning of space charge relaxation. The free carrier concentration, n₀, were evaluated to be of the order of 10²³ m⁻³ at temperatures 400 – 700 K and show a weak dependence on composition. The dominant factor determining conductivity was mobility in these glasses. The strong temperature dependence of n₀ below 400 K indicates changed conditions for the development of the space charge relaxation which are discussed. Paper presented at the 1st Euroconference on Solid State Ionics, Zakynthos, Greece, 11–18 Sept. 1994.     

The Nature of Coloration of the PdM and Pd3M Compounds (M = Sc, Gd, Tb, Lu)

The optical constants of the color intermetallic compounds PdGd and Pd₃Gd are measured by the polarimetric method. Frequency dispersions of the complex permittivity, optical conductivity, and reflectivity, and also the microcharacteristics of the conduction electrons — plasma and relaxation frequencies — are calculated. The energy dependences of these parameters are compared with similar characteristics obtained for this type of compound of palladium with scandium, terbium, and lutecium.     

Nuclear spin relaxation in disordered conductors

The relaxation timesT ₁ andT ₂ for nuclear spins interacting with the conduction electrons of disordered metals are calculated. An explicite expression for Warren's relaxation enhancement in terms of electron spectra is obtained, showing in particular that the proportionality ofT ₁ and the conductivity is a universal feature of high resistivity conductors. A formula for an inhomogeneous line width contribution due to disorder induced static Knight shift fluctuations is found. Two dimensional electron spin diffusion is shown to imply various logarithmic line width corrections.     

Power factor of very thin thermoelectric layers of different thickness prepared by laser ablation

Room temperature conductivity and the Seebeck coefficient of thin layers prepared by laser ablation from Bi₂Te₃ target were explored. The power factor was calculated for samples prepared at substrate temperature of 360°C with the density of the laser beam 5 J cm⁻² and at substrate temperature of 410°C with the density of the laser beam 2 J cm⁻² during the deposition. Oscillations of the conductivity and the power factor with the layer thickness were observed at room temperature. The oscillations of conductivity were also verified at the temperature of 77 K. The period of oscillations depends on the preparation conditions. This behavior has been theoretically explained by the quantum size effect in the layers containing different phases and in addition, it was demonstrated by the X-ray Diffraction measurement. The behavior of the power factor of the layers is compared to the behavior of the figure of merit of the layers published earlier.     

Effect of tunneling on the thermoelectric efficiency of bulk nanostructured materials

The possibility of increasing the thermoelectric figure of merit for bulk nanostructured materials has been investigated theoretically. The kinetic coefficients of the nanostructured material have been calculated and evaluated under the assumption that the dominant role in the transfer is played by the tunneling of electrons between nanoparticles. The limiting case of the absence of phonon thermal conductivity through barrier layers has been considered. It has been demonstrated using the estimates obtained for materials based on Bi₂Te₃ that the thermopower in the nanostructured material can be sufficiently high and that, despite the low electrical conductivity, the dimensionless thermoelectric figure of merit can be as large as 3–4 at room temperature.     

Structural, vibrational, thermal, and conductivity studies on proton-conducting polymer electrolyte based on poly (N-vinylpyrrolidone)

The proton-conducting polymer electrolytes based on poly (N-vinylpyrrolidone) (PVP), doped with ammonium chloride (NH₄Cl) in different molar ratios, have been prepared by solution-casting technique using distilled water as solvent. The increase in amorphous nature of the polymer electrolytes has been confirmed by XRD analysis. The FTIR analysis confirms the complex formation of the polymer with the salt. A shift in glass transition temperature (T _g) of the PVP/NH₄Cl electrolytes has been observed from the DSC thermograms which indicates the interaction between the polymer and the salt. From the AC impedance spectroscopic analysis, the ionic conductivity of 15?mol% NH₄Cl-doped PVP polymer complex has been found to be maximum of the order of 2.51?×?10^?5?Scm^?1 at room temperature. The dependence of T _g and conductivity upon salt concentration has been discussed. The linear variation of the proton conductivity of the polymer electrolytes with increasing temperature suggests the Arrhenius type thermally activated process. The activation energy calculated from the Arrhenius plot for all compositions of PVP doped with NH₄Cl has been found to vary from 0.49 to 0.92?eV. The dielectric loss curves for the sample 85?mol% PVP:15?mol% NH₄Cl reveal the low-frequency ?? relaxation peak pronounced at high temperature, and it may be caused by side group dipoles. The relaxation parameters of the electrolytes have been obtained by the study of Tan?? as a function of frequency.     

Dielectric relaxation and ac conduction in multiferroic TbMnO3 ceramics: Impedance spectroscopy analysis

Polycrystalline samples of Tb_1−xAl_xMnO₃ (x = 0, 0.1, 0.2) have been synthesized by means of standard high-temperature solid-state reaction technique. Detailed studies on the effect of compositional variation of aluminum (Al) on the electrical behavior (complex impedance Z*, complex modulus M*, and relaxation mechanisms) of the parent TbMnO₃ have been performed by using the nondestructive complex impedance spectroscopy technique at temperatures above room temperature. In the temperature range covered, the impedance plots signalize that the grains are the unique responsible for the conduction mechanism of the concerned material. The impedance spectra are well modeled in terms of electrical equivalent circuit with a grain resistance (R_g) and constant phase element impedance (Z_CPE). The conductivity data of the undoped and Al-doped samples are well fitted by the universal Jonscher's power law. The resulting fitting parameters indicate that for the studied samples, the hopping process occurs between neighboring sites. Activation energy values for dc conductivity are calculated for undoped and Al-doped samples and found to decrease when Al is incorporated. In turn, the emergence of single arc in the complex modulus spectrum for all the compositions of Al suggests that for the studied samples only one type of relaxation behavior is present at the selected temperatures. A non-Debye-type relaxation is clearly verified. The relaxation process in the present samples seems to be composition and temperature dependent, particularly at higher frequencies.