The hyperfine structure anomalies of67Ga,69Ga,71Ga,72Ga,113In,115In,and117mIn

The ratios of theg _i -factors of⁶⁹Ga and⁷¹Ga and of¹¹³In and¹¹⁵In have been measured by the NMR method. Using hyperfine interaction constants from literature, the hyperfine structure anomalies⁶⁷Δ⁶⁹,⁶⁹Δ⁷¹,⁷¹Δ⁷² of gallium and¹¹³Δ¹¹⁵,¹¹⁵Δ^117m of indium in the² P _1/2 and² P _3/2 atomic ground states have been calculated.     

High-spin spectroscopy of 63 31Ga32 and 65 31Ga34

High-spin states in the nuclei ⁶³Ga and ⁶⁵Ga were studied following the reaction ³²S + ⁴⁰Ca at a reaction energy of 125 MeV and using the GASP γ-ray spectrometer in combination with the ISIS charged-particle detector system. In addition to low-lying negative-parity states with single-particle character, rotational-like cascades built on the 9/2⁺ and 19/2^- states have been observed in both nuclei. Sidebands with negative parity in ⁶³Ga and positive parity in ⁶⁵Ga could be established. The experimental results are compared with Total Routhian Surface calculations which describe the nuclei as moderately deformed (β₂≈ 0.25) and γ soft at low rotational frequencies. The highest experimentally observed positive-parity state in ⁶⁵Ga (41/2⁺) is in good agreement with the calculated crossing of the collective band with a non-collective one terminating at this spin. Received: 20 December 2000 / Accepted: 2 May 2001     

Relaxation rates of 69Ga and 71Ga nuclei in aqueous solutions

Line widths in the ⁶Li, ⁷Li, ²³Na, ³⁹K, ⁸⁵Rb, ⁸⁷Rb and ¹³³Cs N.M.R. spectra of solutions of the alkali salts of biphenyl and fluorenone are reported as a function of solvent and temperature. From a numerical analysis of the room temperature data the contribution of the various relaxation mechanisms to the line widths are established. It is shown that the results are consistent with the observed solvent and temperature dependence of the line widths. Values of the electron spin correlation time are obtained and a value of 1·6 ± 0·4 Å is found for the ‘Van der Waals radius’ of the biphenyl anion. Line width expressions for the static and the dynamic ion pair model are presented. It is demonstrated that the static ion pair model applies to solutions of caesium biphenylide. Semi-empirical rules are presented concerning the importance of various relaxation mechanisms for the different alkali nuclei in the type of solution studied here.     

Possible mixed valence behavior of CeIr2Ga and YbIr2Ga

We report possible mixed valence behavior in the new ternary compounds CeIr₂Ga and YbIr₂Ga. These materials crystallize in the hexagonal Na₃As structure of space group P6₃ cm. Magnetization, specific heat and transport measurements show reduced magnetic moments and the absence of magnetic order above 0.04 K. The quasi-2D structure of these compounds offers the possibility for investigating the role of spatial dimensionality on mixed valence phenomena.     

Ga penetration into polymers

Received: 31 August 1998 / Accepted: 29 October 1998     

On-axis energy analysis of69Ga+, Ga2+, and Ga 2 + ions emitted from a gallium liquid metal ion source

On-axis energy distribution measurements of 3 ionic species emitted from a gallium liquid metal ion source are reported. Voltage deficits, FWHM energy spreads, angular intensities and chromatic angular intensities are presented and compared with other published work. Ga⁺ deficit variations with beam current and temperature are discussed in detail. Ga ₂ ⁺ FWHM and deficit changes with source operating conditions are accounted for by a model of droplet fragmentation.     

Transverse excitations in liquid Ga

The transverse acoustic excitation modes were detected by inelastic x-ray scattering in liquid Ga in the Q range above 9?nm^?1 although liquid Ga is mostly described by a hard-sphere liquid. An ab initio molecular dynamics simulation clearly supports this finding. From the detailed analysis for the S(Q,ω) spectra with a good statistic quality, the lifetime of 0.5 ps and the propagating length of 0.4–0.5?nm can be estimated for the transverse acoustic phonon modes, which may correspond the lifetime and size of cages formed instantaneously in liquid Ga. The microscopic Poisson’s ratio estimated from the dynamic velocities of sound is 0.42, indicating a rubber-like soft elastic property of the cages.     

Thermal conductivity of liquid Ga

We present accurate values of the thermal conductivity of liquid Ga calculated from measurements of the Lorenz number and the electrical conductivity.     

Magnetic structure and anisotropy of YFe 6 Ga 6 and HoFe 6 Ga 6

The magnetic structure of RFe₆Ga₆ intermetallic compounds with R = Y, Ho have been determined by neutron powder diffraction, ⁵⁷Fe M?ssbauer spectroscopy, AC susceptibility, TGA (Thermo-Gravimetric Analysis) and magnetization measurements. Both compounds crystallize in the tetragonal ThMn₁₂ structure (space group I4/mmm) with the magnetic structure of YFe₆Ga₆ consisting of a simple ferromagnetic alignment of Fe moments in the basal plane with a Curie temperature of 475(5) K. Gallium atoms are found to fully occupy the 8i site, with Fe and Ga atoms equally distributed over the 8j site, whilst Fe atoms fully occupy the 8f site. The average Fe moments are 1.68(10) and 1.46(10) at 15 and 293 K, respectively. The average room temperature Fe magnetic moments determined by neutron diffraction are in overall agreement with the average Fe moment deduced from M?ssbauer spectroscopy and bulk magnetization measurements on this compound. The magnetic anisotropy of the compound HoFe₆Ga₆ is also planar in the temperature range 6-290 K, with Ho magnetic moments of 9.28(20) and 2.50(20) at 6 K and 290 K, respectively, coupled anti-ferromagnetically to the Fe sublattice and a Curie temperature of 460(10) K. The magneto-crystalline anisotropies of both compounds are comparable at low temperatures. Received 8 March 2001 and Received in final form 18 June 2001     

Superstructure Ga4InAs5

An epitaxial layer of the Ga_0.82In_0.18As solid solution is investigated. The coordination of arsenic atoms in the structure of this compound is determined by x-ray diffractometry. The ratio of arsenic atoms in the coordination 4Ga, 3Ga + In, and 2Ga + 2In corresponds to the superstructure in which an In atomic chain along the [110] direction alternates with four Ga chains. An ideal composition for this superstructure is Ga₄InAs₅. New specific features of the domain structure formed as a result of temperature-induced changes in the configuration of tetrahedral bonds are revealed.     

High-spin states in68Ga

The⁶⁸Ga nucleus has been studied via the reactions⁶⁵Cu(α, nγ)⁶⁸Ga atE _α=12–21 MeV and⁶⁶Zn(α, p nγ)⁶⁸Ga atE _α=25–40 MeV. The level scheme has been established by means of relative yield functions, electronic timing measurements, prompt and delayedγ-γ coincidences, angular distributions and directional orientation coÏncidences. Spins up to 11⁺ were assigned to levels up to 4 MeV excitation and the higher ones were interpreted by coupling a⁶⁷Ga core with a (v 1 g_9/2) neutron.     

Beta decay of 61Ga

The β decay of ⁶¹Ga to its mirror nucleus ⁶¹Zn has been measured for the first time by using on-line mass separation and β-delayed gamma-ray spectroscopy. The observed decay strength to the ground state implies superallowed character in accordance with the systematics of the mirror decays in the sd and fp shell. The β feedings observed to four excited states in ⁶¹Zn are consistent with earlier spin-parity assignments based on in-beam experiments. The ground-state spin and parity for ⁶¹Ga were determined to be 3/2⁻. Received: 28 April 1998 / Revised version: 6 October 1998     

Ga sublattice defects in (Ga,Mn)As: thermodynamical and kinetic trends

We have used positron annihilation spectroscopy and infrared absorption measurements to study the Ga sublattice defects in epitaxial Ga(1-x)MnxAs with Mn content varying from 0% to 5%. We show that the Ga vacancy concentration decreases and As antisite concentration increases with increasing Mn content. This is in agreement with thermodynamical considerations for the electronic part of the formation energy of the Ga sublattice point defects. However, the absolute defect concentrations imply that they are determined rather by the growth kinetics than by the thermodynamical equilibrium. The As antisite concentrations in the samples are large enough to be important for compensation and magnetic properites. In addition, the Ga vacancies are likely to be involved in the diffusion and clustering of Mn at low annealing temperatures.     

Emission and excitation spectra of ZnO:Ga and ZnO:Ga,N ceramics

The spectral characteristics of ZnO:Ga and ZnO:Ga,N ceramics prepared by uniaxial hot pressing have been investigated. At room temperature, the edge (exciton) band at 3.12 eV dominates in the luminescence spectra of ZnO:Ga, while a wide luminescence band at 2.37 eV, which is likely to be due to zinc vacancies, is observed in the spectra of ZnO:Ga,N. Upon heating, the edge band maximum shifts to lower energies and the bandwidth increases. The extrapolated position of the edge-band maximum at zero temperature, E _m (0) = 3.367 ± 0.005 eV, is in agreement with the data for thin zinc oxide films. The luminescence excitation spectra in the range from 3 to 6.5 eV are reported and the mechanism of energy transfer to excitons and luminescence centers is considered.     

Effect of Ga and As vacancies on electronic properties of Ga0.9375Al0.0625As

Electronic properties of Ga_0.9375Al_0.0625As with Ga and As monovacancies are investigated with the density functional theory. A perfect GaAlAs, which specifically produces a radiation wavelength of ～825.6 nm, has been determined in terms of size and number of atoms of substances. We have introduced eight types of vacancies depending on the distance from the Al atom to the vacancy to obtain the changes in charges, band structures, density of states, and optical conductivity. We found that the Fermi level enters into the valence band due to the formations of the Ga or As vacancies so that the vacant materials may show the characteristics of the p-type semiconductor. Interestingly, Ga-vacancy systems make direct band gaps, which are still good for the use in a semiconductor laser. But, As-vacancy systems, where the indirect gaps appear, are not feasible for the same application. It has been found that the latter phenomenon is induced by a newly formed density of state, which comes from the overlapping of hybridised 4s and 4p orbitals of Ga atoms around As vacancy.     

Performance Enhancement of Al Ga N/Ga N MIS-HEMTs Realized via Supercritical Nitridation Technology

This paper proposes a method of repairing interface defects by supercritical nitridation technology,in order to suppress the threshold voltage shift of AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors(MIS-HEMTs).We find that supercritical NH_3 fluid has the characteristics of both liquid NH_3 and gaseous NH_3 simultaneously,i.e.,high penetration and high solubility,which penetrate the packaging of MIS-HEMTs.In addition,NH_2~- produced via the auto coupling ionization of NH_3 has strong nucleophilic ability,and is able to fill nitrogen vacancies near the GaN surface created by high temperature processes.After supercritical fluid treatment,the threshold voltage shift is reduced from 1 V to 0 V,and the interface trap density is reduced by two orders of magnitude.The results show that the threshold voltage shift of MIS-HEMTs can be effectively suppressed by means of supercritical nitridation technology.     

Influence of Ga/(Ga + In) grading on deep‐defect states of Cu(In,Ga)Se2 solar cells

The benefits of gallium (Ga) grading on Cu(In,Ga)Se₂ (CIGS) solar cell performance are demonstrated by comparing with ungraded CIGS cells. Using drive‐level capacitance profiling (DLCP) and admittance spectroscopy (AS) analyses, we show the influence of Ga grading on the spatial variation of deep defects, free‐carrier densities in the CIGS absorber, and their impact on the cell's open‐circuit voltage V_oc. The parameter most constraining the cell's V_oc is found to be the deep‐defect density close to the space charge region (SCR). In ungraded devices, high deep‐defect concentrations (4.2 × 10¹⁶cm^–3) were observed near the SCR, offering a source for Shockley–Read–Hall recombination, reducing the cell's V_oc. In graded devices, the deep‐defect densities near the SCR decreased by one order of magnitude (2.5 × 10¹⁵ cm^–3) for back surface graded devices, and almost two orders of magnitude (8.6 × 10¹⁴ cm^–3) for double surface graded devices, enhancing the cell's V_oc. In compositionally graded devices, the free‐carrier density in the absorber's bulk decreased in tandem with the ratio of gallium to gallium plus indium ratio GGI = Ga/(Ga + In), increasing the activation energy, hindering the ionization of the defect states at room temperature and enhancing their role as recombination centers within the energy band. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)