Simple solar cells of 3.5% efficiency with antimony sulfide‐selenide thin films

Thin films of antimony sulfide‐selenide solid solutions (Sb₂S_x Se_3–x) were prepared by chemical bath deposition and thermal evaporation to constitute solar cells of a transparent conductive oxide (FTO)/CdS/Sb₂S_x Se_3–x/C–Ag. The cell parameters vary depending on the sulfide‐selenide composition in the films. The best solar cell efficiency of 3.6% was obtained with a solid solution Sb₂S_1.5Se_1.5 prepared by thermal evaporation of the precipitate for which the open circuit voltage is 0.52 V and short circuit current density, 15.7 mA/cm²under AM 1.5G (1000 W/m²) solar radiation. For all‐chemically deposited solar cells of Sb₂S_1.1Se_1.9 absorber, these values are: 2.7%, 0.44 V, and 15.8 mA/cm², and for Sb₂S_0.8Se_2.2, they are: 2.5%, 0.38 V and 18 mA/cm². (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

n-ZnO:Al/i-ZnO/n-CdS/p-Cu2ZnSnS4太阳能电池光伏特性的分析

具有高光吸收系数的半导体Cu₂ZnSnS₄ (CZTS)薄膜是一种新型太阳能电池材料. 本文对n-ZnO:Al/i-ZnO/n-CdS/p-CZTS结构的CZTS薄膜太阳能电池进行分析, 讨论CZTS薄膜的掺杂浓度、厚度、缺陷态和CdS薄膜的掺杂浓度、 厚度对太阳能电池转换效率的影响以及太阳能电池的温度特性. 分析表明, CZTS薄膜作为太阳能电池的主要光吸收层, CZTS薄膜的掺杂浓度和厚度的取值对太阳能电池的转换效率有显著影响, CZTS薄膜结构缺陷态的存在会导致太阳能电池性能的下降. CdS缓冲层的掺杂浓度、厚度对太阳能电池光伏特性的影响较小. 经结构参数优化得到的n-ZnO:Al/i-ZnO/n-CdS/p-CZTS薄膜太阳能电池的最佳光 伏特性为开路电压1.127 V、短路电流密度27.39 mA/cm²、填充因子87.5%、 转换效率27.02%,转换效率温度系数为-0.14%/K.     

Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure

Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb₂Se₃) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb₂Se₃ thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb₂Se₃ solar cell with a power conversion efficiency of 2.45% was achieved.     

Cu(In,Sn)Se2 thin films for absorption of energy from infrared radiation

In this study, we sought to lower the bandgap of thin film solar cells by replacing the Ga used in the absorber layer of Cu(In,Ga)Se₂ with Sn (bandgap of 0.07?eV) to form Cu(In,Sn)Se₂. The proposed scheme was shown to reduce the bandgap of the absorber layer from 1.0?eV to 0.88?eV. Sn films of various thicknesses were deposited using precursors of Sn–In–Cu metal in order to study the effects of Sn/(In?+?Sn) ratio (SIR) on the structure of the material and photoelectrical characteristics of the Cu(In,Sn)Se₂ absorber layer. Experiment results revealed that a higher SIR following selenization increased the grain size and surface roughness of the absorber layer. It increased the quantity of secondary phases of SnSe₂ and Cu₂SnSe₃ and improved the distribution of Cu and In in the absorber layer. A higher SIR was also shown to increase electron mobility while decreasing carrier concentration and conductivity. When SIR≧0.25, the replacement of In³⁺ with Sn⁴⁺in the Cu⁺ vacancies decreased the electron strength of In. We speculate that an increase in SIR caused a relative increase in the quantity of Sn²⁺ compared to Sn⁴⁺, thereby increasing the electron strength of Sn and switching the absorber layer from a p-type to an n-type semiconductor.     

Structural studies and physical properties of novel Sm-doped Sb2Se3 nanorods

Sm³⁺ doped Sb₂Se₃ nanorods were synthesized by the co-reduction method at 180 °C and pH=12 for 48 h. Powder XRD patterns indicate that the Sm_xSb_2−xSe₃ crystals (x=0.00-0.05) are isostructural with Sb₂Se₃. The cell parameters increase for Sm³⁺ upon increasing the dopant content (x). SEM images show that doping of Sm³⁺ ions in the lattice of Sb₂Se₃ results in nanorods. High-resolution transmission electron microscopic (HRTEM) studies reveal that the Sm_0.05Sb_1.95Se₃ is oriented in the [1 0 −1] growth direction. UV-vis absorption reveals mainly electronic transitions of the Sm³⁺ ions in doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show other emission bands originating from f-f transitions of the Sm³⁺ ions. The electrical conductance of Sm-doped Sb₂Se₃ is higher than undoped Sb₂Se₃ and increase with temperature.     

Synthesis and characterization of new LnxSb2−xSe3 (Ln: Yb, Er) nanoflowers and their physical properties

New Ln_xSb_2−xSe₃ (Ln: Yb³⁺, Er³) based nanomaterials were synthesized by a co-reduction method. Powder XRD patterns indicate that the Ln_xSb_2−xSe₃crystals (Ln=Yb³⁺, Er³⁺, x=0.00-0.12) are isostructural with Sb₂Se₃. The cell parameters b and c decrease for Ln=Er³⁺ and Yb³⁺ upon increasing the dopant content (x), while a increases. SEM images show that doping of the lanthanide ions in the lattice of Sb₂Se₃ generally results in nanoflowers. UV-vis absorption and emission spectroscopy reveals mainly electronic transitions of the Ln³⁺ ions in case of Yb³⁺ doped nanomaterials. Emission spectra of doped materials, in addition to the characteristic red emission peaks of Sb₂Se₃, show additional emission bands centered at 955 nm, originating from the ²F_7/2→²F_5/2 transition (f-f transitions) of the Yb³⁺ ions. DSC curves indicate that Sb₂Se₃ has the highest thermal stability. The temperature dependence of the electrical resistivity of doped-Sb₂Se₃ with Yb³⁺ and Er³⁺ was studied.     

Synergy study on charge transport dynamics in hybrid organic solar cell: Photocurrent mapping and performance analysis under local spectrum

Charge transport dynamics in ZnO based inverted organic solar cell (IOSC) has been characterized with transient photocurrent spectroscopy and localised photocurrent mapping-atomic force microscopy. The value of maximum exciton generation rate was found to vary from 2.6 × 10²⁷ m⁻³s⁻¹ (J_sat = 79.7 A m⁻²) to 2.9 × 10²⁷ m⁻³s⁻¹ (J_sat = 90.8 A m⁻²) for devices with power conversion efficiency ranging from 2.03 to 2.51%. These results suggest that nanorods served as an excellent electron transporting layer that provides efficient charge transport and enhances IOSC device performance. The photovoltaic performance of OSCs with various growth times of ZnO nanorods have been analysed for a comparison between AM1.5G spectrum and local solar spectrum. The simulated PCE of all devices operating under local spectrum exhibited extensive improvement with the gain of 13.3–13.7% in which the ZnO nanorods grown at 15 min possess the highest PCE under local solar with the value of 2.82%.     

Comparative study on Cu2ZnSn(S,Se)4 based thin film solar cell performances by adding various back surface field (BSF) layers

In this research work, SCAPS-1D (Solar Cell Capacitance Simulator in one Dimension) is used to simulate the CZTSSe (Cu2ZnSn(S,Se)4) solar cell with Al/ZnO:Al/ZnO(i)/CdS/CZTSSe/Mo structure. The simulation results have been compared and validated with real experimental results. After that, an effective receipt is proposed with the aim of improving the efficiency of the CZTSSe solar cell, in which a BSF layer is inserted using various materials (SnS, CZTSSe and CZTSe). The obtained results show that the efficiencies of CZTSSe solar cells are increased from 12.3% to 15.7%, 15.3% and 15% by the insertion of SnS, CZTSSe and CZTSe materials as BSF layers, respectively. This enhancement corresponds with a BSF layer thickness of 30 nm and doping concentration of 1E18 cm⁻³. Next, an optimization of BSF layers thickness has been conducted. The optimum value of thickness is considered at 40 nm with an enhancement ratio in efficiency of 36.70%, 26.21% and 21.53% for SnS, CZTSSe and CZTSe, respectively. Better performances have been noted for SnS material. The optimized CZTSSe solar cell with SnS as a BSF layer achieves an efficiency of 16.95% with J_SC = 36.34 mA/cm², V_OC = 0.69 V, and FF = 67% under Standard Test Conditions (AM1.5 G and cell temperature of 25 °C).     

Effective Mass Enhancement and Thermal Conductivity Reduction for Improving the Thermoelectric Properties of Pseudo-Binary Ge2Sb2Te5

Ge₂Sb₂Te₅ is a famous phase-change memory material for rewriteable optical storage, which is widely applied in the information storage field. The stable trigonal phase of Ge₂Sb₂Te₅ shows potential as a thermoelectric material as well, due to its tunable electrical transport properties and low lattice thermal conductivity. In this work, the carrier concentration and effective mass of Ge₂Sb₂Te₅ are modulated by substituting Te with Se. Meanwhile, the thermal conductivity reduces from 2.48 W m⁻¹ K⁻¹ for Ge₂Sb₂Te₅ to 1.37 W m⁻¹ K⁻¹ for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. Therefore, the thermoelectric figure of merit zT increases from 0.24 for Ge₂Sb₂Te₅ to 0.41 for Ge₂Sb₂Te_3.5Se_1.5 at 703 K. This study reveals that Se alloying is an effective way to enhance the thermoelectric properties of Ge₂Sb₂Te₅.     

Characterization of CBO and defect states of CZTSe solar cells prepared by using two-step process

We fabricated kesterite Cu₂ZnSnSe₄ (CZTSe) solar cells and studied device characteristics, where CZTSe absorbers were made by using two-step process. First, we deposited precursor CZTSe films with spin-coating or sputtering, and performed sulfurization and subsequent selenization. To complete the device, we applied In₂S₃ as a buffer layer. We obtained power conversion efficiency (PCE) of 4.18% with spin-coated CZTSe absorber and 5.60% with sputtered CZTSe absorber. Both devices showed deep defects in the bulk and strong interface recombinations near the pn junction. In addition, we observed red-kinks in the current density-voltage (J-V) curves for both devices under the filtered light illumination (>660 nm), which is attributed to large conduction band offset (CBO) between the CZTSe absorber and the buffer layer and defect states in the buffer/CZTSe absorber or in the buffer. The red-kink was also observed in CZTSe (PCE of 7.76%) solar cell with CdS buffer. Hence, to enhance the PCE with CZTSe absorber, along with suppression of deep defects which act as recombination center, optimization of CBO between absorber and buffer is also required.     

Extending absorption of near-infrared wavelength range for high efficiency CIGS solar cell via adjusting energy band

The efficient photon harvesting in near infrared wavelength range is still a challenging problem for high performance Cu(In_1-x, Ga_x)Se₂ (CIGS) solar cell. Herein, adjusting the energy band distribution of CIGS solar cell could provide significant academic guidance for devices with superior output electric power. To understand the role of each functional layer, the optimal 3000 nm CIGS absorber layer with 1.3 eV bandgap and 30 nm CdS buffer layer were firstly obtained via simulating the uniform band-gap structures. By introducing CIGS absorber layer with a double grading Ga/(Ga+In) profile, the power conversion efficiency of the double gradient band gap cell is superior to that of uniform band-gap cell through extending absorption of near-infrared wavelength range. Upon optimization, the best power conversion efficiency of CIGS with a double gradient band gap solar cell is improved significantly to 24.90%, among the best values reported in literatures, which is an 8.17% relative increase compared with that of the uniform band-gap cell. Our findings provide a theoretical guide toward the design of high performance solar cells and enrich the understandings of the energy band engineering for developing of novel semiconductor devices.     

Photovoltaic structures using AgSb(S x Se1−x )2 thin films as absorber

Photovoltaic structures were prepared using AgSb(S _x Se_1?x )₂ as absorber and CdS as window layer at various conditions via a hybrid technique of chemical bath deposition and thermal evaporation followed by heat treatments. Silver antimony sulfo selenide thin films [AgSb(S _x Se_1?x )₂] were prepared by heating multilayers of sequentially deposited Sb₂S₃/Ag dipped in Na₂SeSO₃ solution, glass/Sb₂S₃/Ag/Se. For this, Sb₂S₃ thin films were deposited from a chemical bath containing SbCl₃ and Na₂S₂O₃. Then, Ag thin films were thermally evaporated on glass/Sb₂S₃, followed by selenization by dipping in an acidic solution of Na₂SeSO₃. The duration of dipping was varied as 3, 4 and 5 h. Two different heat treatments, one at 350 °C for 20 min in vacuum followed by a post-heat treatment at 325 °C for 2 h in Ar, and the other at 350 °C for 1 h in Ar, were applied to the multilayers of different configurations. X-ray diffraction results showed the formation of AgSb(S _x Se_1?x )₂ thin films as the primary phase and AgSb(S,Se)₂ and Sb₂S₃ as secondary phases. Morphology and elemental detection were done by scanning electron microscopy and energy dispersive X-ray analysis. X-ray photoelectron spectroscopic studies showed the depthwise composition of the films. Optical properties were determined by UV–vis–IR transmittance and reflection spectral analysis. AgSb(S _x Se_1?x )₂ formed at different conditions was incorporated in PV structures glass/FTO/CdS/AgSb(S _x Se_1?x )₂/C/Ag. Chemically deposited post-annealed CdS thin films of various thicknesses were used as window layer. J–V characteristics of the cells were measured under dark and AM1.5 illumination. Analysis of the J–V characteristics resulted in the best solar cell parameters of V _oc = 520 mV, J _sc = 9.70 mA cm^?2, FF = 0.50 and η = 2.7 %.     

Study of As-Sb-Se chalcogenide glasses by NQR and EPR spectroscopy methods

In this paper experimental results obtained by both ⁷⁵As NQR and EPR spectroscopy are presented for the three-component system As-Sb-Se. The ⁷⁵As NQR spectra of glasses of structures (As₂Se₃)_0.78 (Sb₂Se₃)_0.22, (As₂Se₃)_0.75 (Sb₂Se₃)_0.25, (As₂Se₃)_0.5 (Sb₂Se₃)_0.5 have broad lines with two Sb-NQR lines (corresponding to the Sb₂Se₃ units) and two ⁷⁵As-NQR lines (corresponding to the As₂Se₃ units). Differences in the EPR spectra of the different glasses arise because of the different amounts of arsenic and antimony in their structure.     

Synergistically Enhancing Thermoelectric Performance of n-Type PbTe with Indium Doping and Sulfur Alloying

To achieve high-performance n-type PbTe-based thermoelectric materials, this work provides a synergetic strategy to improve electrical transport property with indium (In) element doping and reduces thermal conductivity with sulfur (S) element alloying. In n-type PbTe, In doping can tune the carrier density in the whole working temperature range, causing the carrier density to increase from 2.18 × 10¹⁹ cm⁻³ at 300 K to 4.84 × 10¹⁹ cm⁻³ at 823 K in Pb_0.98In_0.005Sb_0.015Te. The optimized carrier density can further modulate electrical conductivity and Seebeck coefficient, finally contributing to a substantial increase of power factor, and a maximum power factor increase from 19.7 µW cm⁻¹ K⁻² in Pb_0.985Sb_0.015Te to 28.2 µW cm⁻¹ K⁻² in Pb_0.9775In_0.0075Sb_0.015Te. Based on the optimally In-doped PbTe, S alloying is introduced to suppress phonon propagation by forming a complete solid solution, which could effectively reduce lattice thermal conductivity and simultaneously benefit carrier mobility to maintain high power factor. With S alloying, the minimum lattice thermal conductivity decreases from 0.76 Wm⁻¹ K⁻¹ in Pb_0.985Sb_0.015Te to 0.42 Wm⁻¹ K⁻¹ in Pb_0.98In_0.005Sb_0.015Te_0.88S_0.12. Combining the advantages of both In doping and S alloying, the peak ZT value and averaged ZT (ZT_ave) (300–873 K) are boosted from 1.0 and 0.60 in Pb_0.985Sb_0.015Te to 1.4 and 0.87 in Pb_0.98In_0.005Sb_0.015Te_0.94S_0.06.     

Numerical modeling of an InAsSb/InAsSbP double heterojunction light emitting diode for mid-infrared (2–5 μm) applications

The numerical model of a Mid-infrared (MIR) P⁺–InAs_0.48Sb_0.22P_0.30/n⁰–InAs_0.89Sb_0.11/N⁻–InAs_0.48Sb_0.22P_0.30 double heterostructure light emitting diode (DH-LED) has been reported in this paper. The governing equation of the structure has been solved numerically under the condition of high injection using fourth order Runge-Kutta method employing the shooting algorithm. The numerical model takes into account all dominant radiative and non-radiative recombination processes, surface recombination velocity and self-absorption in the active layer of DH-LED. The DH-LED has been simulated for mid-infrared applications by considering modulation bandwidth and its dependence on active layer width, doping concentration, and injected carrier density. The effect of surface recombination velocity on the quantum efficiency, peak light intensity for different values of active layer width and doping concentration has been estimated numerically. The rise time of the structure has been evaluated by considering transient response for a step current of 50 mA. The output power of DH-LED has been computed as a function of bias current and compared/ contrasted with the reported analytical and experimental results.     

Fabrication of in situ alkali doped flexible CIGSSe solar cells by using aqueous spray deposition

Flexible Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells were fabricated on stainless steel foil by using aqueous spray deposition method. Since stainless steel foil is used, external alkali doping is necessary to passivate defects in CIGSSe absorber. We investigated effects of (Na, K) co-doping and selenization temperature on solar cell performance. With co-doping of Na and K, defect states were passivated significantly and highest power conversion efficiency (PCE) was obtained. However, at higher K concentration of more than 0.5%, different growth mode of CIGSSe was observed and deep defect states were developed, decreasing PCE. In addition, selenization temperature effects were studied by varying selenization temperatures. With higher selenization temperature, defect passivation for the CIGSSe absorber was more apparent, which facilitated increase of open circuit voltage. However, short circuit current was observed to be decreased at higher selenization temperature of 570 °C. This work demonstrates in-situ alkali co-doping into CIGSSe absorber with simple and low-cost spray deposition in an air environment.     

基于金纳米棒@二氧化硅表面等离子体共振增强的有机太阳能电池

把包裹SiO₂的金纳米棒（Au NRs@SiO₂）掺杂到有机太阳能电池的活性层中,利用表面等离子体共振效应来增强活性层对光的吸收,从而提高有机太阳能电池的能量转换效率。研究了不同掺杂浓度和不同包裹厚度对电池性能的影响。结果表明,掺杂浓度为1.5%时,器件性能最佳,能量转换效率达到4.02%;SiO₂壳层厚度为3 nm时,转换效率达到4.38%,较标准电池提升了29.2%。     

Pentacene as a hole transport material for high performance planar perovskite solar cells

A cost-effective and efficient organic semiconductor pentacene was developed as a hole transport layer (HTL) material to replace classical PEDOT:PSS for planar perovskite solar cells (PSCs). As expected, the pentacene based device exhibits power conversion efficiency (PCE) of 15.90% (J_sc of 19.44 mA/cm², V_oc of 1.07 V, and FF of 77%), comparable to the PEDOT:PSS based device (PCE of 15.65%, J_sc of 18.78 mA/cm², V_oc of 1.07 V, and FF of 77%) under the same experimental conditions. The excellent performance of vacuum deposited pentacene is mainly attributed to the high efficient charge extraction and transfer in device due to the high-quality perovskite film grown on the top of pentacene substrate and a favorable energy-level alignment together with a desired downward band bending formed at the perovskite/pentacene interface. Our research has confirmed that pentacene could be served as a promising HTL material to achieve effective and potentially economical planar type PSCs.     

Optical and electrical properties of single Sb2Se3 nanorod

In this report, methods of solvothermal synthesis of Sb₂Se₃ nanorods from a single-source precursor Sb[Se₂P(O ⁱPr)₂]₃ were demonstrated. The synthesized Sb₂Se₃ nanorods were expected to have new optical and electrical properties. With the electron beam (E-beam) lithography and focus ion beam (FIB) techniques, we achieved immobilization and positioning of a single Sb₂Se₃ nanorod on a patterned template. By using the confocal Raman microscope and two-point-contact electrical measurement methods, we obtained optical and electrical characteristics from a single Sb₂Se₃ nanorod.     

Compositional investigation of potassium doped Cu(In,Ga)Se2 solar cells with efficiencies up to 20.8%

We report on the interaction between intentional potassium doping of thin film Cu(In,Ga)Se₂ (CIGS) solar cells, CIGS absorber composition, and device efficiency. Up to now high efficiency CIGS solar cells could not be produced with a gallium/(gallium + indium) ratio higher than 35%. The new doping process step does not only increase solar cell conversion efficiencies up to 20.8%, but also allows a shift in the CIGS absorber composition towards higher gallium content whilst maintaining this high efficiencies level. We find that the saturation of the open circuit voltages for higher gallium content that is normally observed can partially be overcome by the new doping procedure. This observation leads us to the conclusion that even on this high performance level CIGS solar cells still hold a potential for further development beyond the record values reported here. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)