Visualization of focusing–refocusing cycles during filamentation in BaF<Subscript>2</Subscript>

Filamentation occurs within a 1.5 cm-long crystal of BaF₂ during the propagation of intense, ultrashort (40 fs) pulses of 800 nm light; a systematic study as a function of incident power enables us to extract quantitative information on laser intensity within the condensed medium, the electron density and the six-photon absorption cross section. At low incident power, a single filament is formed within the crystal; two or more filaments are observed along the direction transverse to laser propagation at higher incident powers. Further, due to fluorescence from six-photon absorption (6PA), we are able to map the intensity variation in the focusing–refocusing cycles along the direction of laser propagation. At still higher incident powers, we observe splitting of multiple filaments. By measuring the radius (L _min) of single filament inside BaF₂, we obtain estimates of peak intensities (I _max) and electron densities (ρ _max) to be 3.26×10¹³ W cm⁻² and 2.81×10¹⁹ cm⁻³, respectively. Use of these values enables us to deduce that the 6PA cross-section in BaF₂ is 0.33×10⁻⁷⁰ cm¹² W⁻⁶ s⁻¹.     

CdS plume composition and dynamics of neutral species upon ablation with 532 nm laser light

The neutral species present in CdS ablation plumes upon nanosecond 532 nm laser irradiation at a moderate fluence of 0.5–0.75 J cm⁻² have been studied. Neutral Cd _n S _m clusters have been identified, some as large as (CdS)₃₃₋₃₄ (1–2 nm in diameter). The analysis of the dynamics of neutral species shows an expansion with two components that differ both in composition and dynamics. A fast, high kinetic energy component, dominated by S₂ which acquires free-flow conditions at short distances from the target, is followed by a slower component characterized by similar speeds for all species. This slower component shows dynamic features that are expected to favor aggregation processes leading to effective cluster formation.     

Pulsed laser deposition of Zr–N codoped <Emphasis Type="Italic">p</Emphasis>-type ZnO thin films

Present p-type ZnO films tend to exhibit high resistivity and low carrier concentration, and they revert to their natural n-type state within days after deposition. One approach to grow higher quality p-type ZnO is by codoping the ZnO during growth. This article describes recent results from the growth and characterization of Zr–N codoped p-type ZnO thin films by pulsed laser deposition (PLD) on (0001) sapphire substrates. For this work, both N-doped and Zr–N codoped p-type ZnO films were grown for comparison purposes at substrate temperatures ranging between 400 to 700 °C and N₂O background pressures between 10⁻⁵ to 10⁻² Torr. The carrier type and conduction were found to be very sensitive to substrate temperature and N₂O deposition pressure. P-type conduction was observed for films grown at pressures between 10⁻³ to 10⁻² Torr. The Zr–N codoped ZnO films grown at 550 °C in 1×10⁻³ Torr of N₂O show p-type conduction behavior with a very low resistivity of 0.89 Ω-cm, a carrier concentration of 5.0×10¹⁸ cm⁻³, and a Hall mobility of 1.4 cm² V⁻¹ s⁻¹. The structure, morphology and optical properties were also evaluated for both N-doped and Zr–N codoped ZnO films.     

Conductivity studies of starch-based polymer electrolytes

A proton-conducting polymer electrolyte based on starch and ammonium nitrate (NH₄NO₃) has been prepared through solution casting method. Ionic conductivity for the system was conducted over a wide range of frequency between 50 Hz and 1 MHz and at temperatures between 303 K and 373 K. Impedance analysis shows that sample with 25 wt.% NH₄NO₃ has a smaller bulk resistance (R _b) compared to that of the pure sample. The amount of NH₄NO₃ was found to influence the proton conduction; the highest obtainable room temperature conductivity was 2.83 × 10⁻⁵ S cm⁻¹, while at 100 °C, the conductivity in found to be 2.09 × 10⁻⁴ S cm⁻¹. The dielectric analysis demonstrates a non-Debye behavior. Transport parameters of the samples were calculated using the Rice and Roth model and thus shows that the increase in conductivity is due to the increase in the number of mobile ions.     

Effect of the ceramic grain size and concentration on the dynamical mechanical and dielectric behavior of poly(vinilidene fluoride)/Pb(Zr<Subscript>0.53</Subscript>Ti<Subscript>0.47</Subscript>)O<Subscript>3</Subscript> composites

Laser-induced backside wet and dry etching (LIBWE and LIBDE) methods were developed for micromachining of transparent materials. Comparison of these techniques is helpful in understanding the etching mechanism but was not realized due to complications in setting up comparable experimental conditions. In our comparative investigations we used a solid tin film for dry and molten tin droplets for wet etching of fused-silica plates. A tin–fused-silica interface was irradiated through the sample by a KrF excimer laser beam (λ=248 nm, FWHM=25 ns); the fluence was varied between 400 and 2100 mJ/cm². A significant difference between the etch depths of the two investigated methods was not found. The slopes of the lines fitted to the measured data (sl_LIBDE=0.111 nm/mJ cm⁻², sl_LIBDE=0.127 nm/mJ cm⁻²) were almost similar. Etching thresholds for LIBDE and LIBWE were approximately 650 and 520 mJ/cm², respectively. To compare the dependence of etch rates on the pulse number, target areas were irradiated at different laser fluences and pulse numbers. With increasing pulse number a linear rise of depth was found for wet etching while for dry etching the etch depth increase was nonlinear. Secondary ion mass spectroscopic investigations proved that this can be due to the reconstruction of a new thinner tin-containing surface layer after the first pulse.     

Production and characterization of Nd,Cr:GSGG thin films on Si(001) grown by pulsed laser ablation

Nd,Cr:Gd₃Sc₂Ga₃O₁₂ (GSGG) thin films have been produced for the first time. They were grown on Si(001) substrates at 650 °C by pulsed laser ablation at 248 nm of a crystalline Nd,Cr:GSGG target rod. The laser plume was analyzed using time-of-flight quadrupole mass spectroscopy, and consisted of elemental and metal oxide fragments with kinetic energies typically in the range 10 to 40 eV, though extending up to 100 eV. Although films deposited in vacuum using laser fluences of 0.8±0.1 J cm⁻² reproduced the Nd,Cr:GSGG bulk stoichiometry, those deposited using fluences above ≈3 J cm⁻² resulted in noncongruent material transfer and were deficient in Ga and Cr. Attempts to grow films using synchronized oxygen or oxygen/argon pulses yielded mixed oxide phases. Under optimal growth conditions, the films were heteroepitaxial, with GSGG(001)[100]∥Si(001)[100], and exhibited Volmer–Weber-type growth. Room-temperature emission spectra of the films suggest efficient non-radiative energy transfer between Cr³⁺ and Nd³⁺ ions, similar to that of the bulk crystal. Received: 1 October 1999 / Accepted: 15 October 1999 / Published online: 23 February 2000     

Three-dimensional simulation of laser–plasma-based electron acceleration

A sequential three-dimensional (3D) particle-in-cell simulation code PICPSI-3D with a user friendly graphical user interface (GUI) has been developed and used to study the interaction of plasma with ultrahigh intensity laser radiation. A case study of laser–plasma-based electron acceleration has been carried out to assess the performance of this code. Simulations have been performed for a Gaussian laser beam of peak intensity 5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 1 × 10¹⁹ cm^− 3, and for a Gaussian laser beam of peak intensity 1.5 × 10¹⁹ W/cm² propagating through an underdense plasma of uniform density 3.5 × 10¹⁹ cm^− 3. The electron energy spectrum has been evaluated at different time-steps during the propagation of the laser beam. When the plasma density is 1 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~14 MeV, with an energy spread of ±7 MeV. On the other hand, when the plasma density is 3.5 × 10¹⁹ cm^− 3, simulations show that the electron energy spectrum forms a monoenergetic peak at ~23 MeV, with an energy spread of ±7.5 MeV.     

Solid polymeric electrolyte of PVC–ENR–LiClO<Subscript>4</Subscript>

The ionic conductivity of PVC–ENR–LiClO₄ (PVC, polyvinyl chloride; ENR, epoxidized natural rubber) as a function of LiClO₄ concentration, ENR concentration, temperature, and radiation dose of electron beam cross-linking has been studied. The electrolyte samples were prepared by solution casting technique. Their ionic conductivities were measured using the impedance spectroscopy technique. It was observed that the relationship between the concentration of salt, as well as temperature, and conductivity were linear. The electrolyte conductivity increases with ENR concentration. This relationship was discussed using the number of charge carrier theory. The conductivity–temperature behaviour of the electrolyte is Arrhenian. The conductivity also varies with the radiation dose of the electron beam cross-linking. The highest room temperature conductivity of the electrolyte of 8.5 × 10⁻⁷ S/cm was obtained at 30% by weight of LiClO₄. The activation energy, E _a and pre-exponential factor, σ _o, are 1.4 × 10⁻² eV and 1.5 × 10⁻¹¹ S/cm, respectively.     

Fabrication of a nanoparticle TiO<Subscript>2</Subscript> photoelectrochemical cell utilizing a solid polymeric electrolyte of PAN–PC–LiClO<Subscript>4</Subscript>

A nanoparticle TiO₂ solid-state photoelectrochemical cell utilizing as a solid electrolyte of poly(acrylonitrile)–propylene–carbonate–lithium perchlorate (PAN–PC–LiClO₄) has been fabricated. The performance of the device has been tested in the dark and under illumination of 100-mW cm⁻² light. A nanoparticle TiO₂ film was deposited onto indium tin oxide-covered glass substrate by controlled hydrolysis technique assisted with spin-coating technique. The average grain size for the TiO₂ film is 76 nm. LiClO₄ salt was used as a redox couple. The room temperature conductivity of the electrolyte is 4.2 × 10⁻⁴ S cm⁻¹. A graphite electrode was prepared onto a glass slide by electron beam evaporation technique. The device shows the rectification property in the dark and shows the photovoltaic effect under illumination. The best J _sc and V _oc of the device were 2.82 μA cm⁻² and V _oc of 0.58 V, respectively, obtained at the conductivity of 4.2 × 10⁻⁴ S cm⁻¹ and intensity of 100 mW cm⁻². The J _sc was improved by about three times by introducing nanoparticle TiO₂ and by using a solid electrolyte of PAN–PC–LiClO₄ replacing PVC–PC–LiClO₄ in the device. The current transport mechanism of the cell is also presented in this paper.     

Diamond/graphite content and biocompatibility of DLC films fabricated by PLD

Biocompatibility and physicochemical properties of diamond-like carbon (DLC) thin layers prepared by pulsed laser deposition method were studied. The films of high and low diamond/graphite content were prepared by changing the laser energy density on the graphite target from 4 to 11 J cm⁻². The bonds and surface properties as roughness, atomic force microscopy topology, contact angle parameters, and zeta potential were measured. The cell adhesion/proliferation on DLC layers was tested using normal human fibroblasts and keratinocytes.     

Atomic force microscopy, Raman spectroscopy and nonlinear absorption properties of femtosecond laser irradiated CR-39

Investigations have been performed to explore ultrashort laser irradiation effects on the surface topography as well as structural and nonlinear absorption properties of a polymer CR-39. For this purpose, a CR-39 target was exposed in air to 25 fs, 800 nm Ti:sapphire laser radiation at fluences ranging from 0.25 J cm⁻² to 3.6 J cm⁻². The surface features, structural changes and nonlinear absorption were explored by AFM, Raman Spectroscopy and a Z-scan technique, respectively. Several topographical structures like bumps, explosions and nano cavities have been observed on the irradiated surface. Raman spectroscopy reveals changes in the fundamental structure of the polymer after the irradiation. Nonlinear absorption data contained by the Z-scan technique predict the dominance of three-photon absorption in case of pristine CR-39. Furthermore, nonlinear absorption (three or two photon) increases with increasing laser fluences and is well correlated with surface and structural changes revealed by AFM and Raman spectroscopy.     

Gelatin-based protonic electrolyte for electrochromic windows

Proton-conducting gel polymer electrolytes based on gelatin plasticized with glycerol and containing acetic acid were investigated, characterized, and applied to electrochromic window. For glycerol contents varying from 7% to 48%, the conductivity of the uniform and predominantly amorphous gel electrolyte was found to follow a Vogel–Tamman–Fulcher behavior with the temperature. Typically, for the electrolyte chosen to make 7 × 2 cm² electrochromic smart window with the configuration: glass/fluor-doped tin oxide (FTO)/WO₃/gelatin electrolyte/CeO₂–TiO₂/FTO/glass and containing 28% of glycerol, the conductivities were found to be of the order of 5 × 10⁻⁵ S/cm at room temperature and 3.6 × 10⁻⁴ S/cm at 80 °C. The device was characterized by spectroelectrochemical techniques and was tested up to 10,000 cycles showing a fast coloring/bleaching behavior, where the coloring process was achieved in 10 s and the bleaching in 2 s. The transmission variation at the wavelength of 550 nm was about 15%. The cyclic voltammograms showed a very good reversibility of the cathodic/anodic processes, and the charge density was about 3.5 mC/cm². The memory tests showed that the transmittance in the colored state increased by 8% in 90 min after removing the potential.     

Non-steady-state photo-EMF in nanostructured GaN and polypyrrole within porous matrices

We report an experimental investigation of the non-steady-state photoelectromotive force in nanostructured GaN within porous glass and polypyrrole within chrysotile asbestos. The samples are illuminated by an oscillating interference pattern created by two coherent light beams and the alternating current is detected as a response of the material. Dependences of the signal amplitude versus temporal and spatial frequencies, light intensity, and temperature are studied for two wavelengths λ=442 and 532 nm. The conductivity of the GaN composite is measured: σ=(1.1–1.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=442 nm, I ₀=0.045–0.19 W/cm², T=293 K) and σ=(3.5–4.6)×10⁻¹⁰ Ω⁻¹ cm⁻¹ (λ=532 nm, I ₀=2.3 W/cm², T=249–388 K). The diffusion length of photocarriers in polypyrrole nanowires is also estimated: L _D=0.18 μm.     

Optical absorption in early stage low temperature laser produced plasma

We describe a new technique to measure the UV/visible absorption spectrum of the ablated material during the laser pulse. The technique utilizes the continuum emission from one laser produced plasma as a light source to measure the absorption properties of a second laser produced plasma which is formed on a semi-transparent target with an array of 40 μm holes. A 6 ns, 1064 nm laser was used to ablate a Ag target and the plasma absorption was measured in the range 450–625 nm for a laser fluence of 1 J cm⁻². The total absorption cross-section is (0.5–1.5)×10⁻¹⁷ cm² in the range 450–540 nm. By comparing the measured absorption with a calculation using the plasma spectroscopy code FLYCHK it can be concluded that, in the wavelength region examined here, the absorption is mainly due to bound-bound transitions.     

The growth of Y2SiO5:Ce thin films with pulsed laser deposition

Y₂SiO₅:Ce phosphor thin films were grown onto Si(100) substrates with pulsed laser deposition (PLD) using a 248-nm KrF excimer laser. Process parameters were varied during the growth process and the effect on the surface morphology and cathodoluminescence (CL) was analysed. The process parameters that were changed included the following: gas pressure (vacuum (5×10⁻⁶ Torr), 1×1⁻² Torr and 1 Torr O₂), different gas species (O₂, Ar and N₂ at a pressure of 455 mTorr), laser fluence (1.6±0.1 J cm⁻² and 3.0±0.3 J cm⁻²) and substrate temperature (400 and 600°C). The surface morphology was investigated with atomic force microscopy (AFM). The morphology of the thin films ablated in vacuum and 10 mTorr ambient O₂ showed more or less the same trend. An increase in the pressure to 1 Torr O₂, however, showed a definite increase in deposited particle sizes. Ablation in N₂ gas resulted in small particles of 20 nm in diameter and ablation in O₂ gas produced bigger particles of 20, 30 and 40 nm as well as an agglomeration of these particles into bigger size clusters of 80 to 100 nm. Ablation in Ar gas led to particle sizes of 30 nm and the particles were much more spherically defined and evenly distributed on the surface. The higher fluence deposition led to bigger particle and grain sizes as well as thicker layers with respect to the lower fluence. The particle sizes of the higher fluence vary mainly between 130 and 140 nm and the lower fluence sizes vary between 50 and 60 nm. The higher fluence particles consist of smaller particles ranging from 5 to 30 nm as measured with AFM. The surface structure of the thin film ablated at 400°C substrate temperature is less compact (lesser agglomeration of particles than at 600°C). The increase in substrate temperature definitely resulted in a rougher surface layer. CL was measured to investigate the effect of the surface morphology on the luminescent intensities. The increased O₂ ambient (1 Torr) resulted in a higher CL intensity compared to the thin films ablated in vacuum. The thin film ablated in Ar gas showed a much higher CL intensity than the other thin films. Ablation at a high fluence resulted in a higher CL intensity. The higher substrate temperature resulted in better CL intensities. The more spherically shaped particles and rougher surface led to increase CL intensities.     

A novel PEO-based composite polymer electrolyte with NaAlOSiO molecular sieves powders

Ion-conducting thin film polymer electrolytes based on poly(ethylene oxide) (PEO) complexes with NaAlOSiO molecular sieves powders has been prepared by solution casting technique. X-ray diffraction, scanning electron microscopy, differential scanning calorimeter, and alternating current impedance techniques are employed to investigate the effect of NaAlOSiO molecular sieves on the crystallization mechanism of PEO in composite polymer electrolyte. The experimental results show that NaAlOSiO powders have great influence on the growth stage of PEO spherulites. PEO crystallization decrease and the amorphous region that the lithium-ion transport is expanded by adding appropriate NaAlOSiO, which leads to drastic enhancement in the ionic conductivity of the (PEO)₁₆LiClO₄ electrolyte. The ionic conductivity of (PEO)₁₆LiClO₄-12 wt.% NaAlOSiO achieves (2.370 ± 0.082) × 10⁻⁴ S · cm⁻¹ at room temperature (18 °C). Without NaAlOSiO, the ionic conductivity has only (8.382 ± 0.927) × 10⁻⁶ S · cm⁻¹, enhancing 2 orders of magnitude. Compared with inorganic oxide as filler, the addition of NaAlOSiO molecular sieves powders can disperse homogeneously in the electrolyte matrix without forming any crystal phase and the growth stage of PEO spherulites can be hindered more effectively.     

Impedance and FTIR studies on plasticized PMMA–LiN(CF<Subscript>3</Subscript>SO<Subscript>2</Subscript>)<Subscript>2</Subscript> nanocomposite polymer electrolytes

Plasticized polymer electrolytes composed of poly(methyl methacrylate) (PMMA) as the host polymer and lithium bis(trifluoromethanesulfonyl)imide LiN(CF₃SO₂)₂ as a salt were prepared by solution casting technique at different ratios. The ionic conductivity varied slightly and exhibited a maximum value of 3.65 × 10⁻⁵ S cm⁻¹ at 85% PMMA and 15% LiN(CF₃SO₂)₂. The complexation effect of salt was investigated using FTIR. It showed some simple overlapping and shift in peaks between PMMA and LiN(CF₃SO₂)₂ salt in the polymer electrolyte. Ethylene carbonate (EC) and propylene carbonate (PC) were added to the PMMA–LiN(CF₃SO₂)₂ polymer electrolyte as plasticizer to enhance the conductivity. The highest conductivities obtained were 1.28 × 10⁻⁴ S cm⁻¹ and 2.00 × 10⁻⁴ S cm⁻¹ for EC and PC mixture system, respectively. In addition, to improve the handling of films, 1% to 5% fumed silica was added to the PMMA–LiN(CF₃SO₂)₂–EC–PC solid polymer electrolyte which showed a maximum value at 6.11 × 10⁻⁵ S cm⁻¹ for 2% SiO₂.     

Laser forward transfer of silver electrodes for organic thin-film transistors

Organic thin-film transistors (OTFTs) with top- and bottom-contact configurations were fabricated using silver nano-inks printed by laser forward transfer for the gate and source/drain electrodes with pentacene and poly-4-vinylphenol as the organic semiconductor and dielectric layers, respectively. The volume of the laser-printed Ag pixels was typically in the subpicoliter (0.2–0.4 pl) range. The top-contact OTFTs resulted in lower contact resistance compared to those obtained from the bottom-contact OTFTs, and showed improved overall device performance. The top-contact OTFTs exhibited field-effect mobilities of ∼0.16 cm² V⁻¹ s⁻¹ and on/off current ratios of ∼10⁵.     

Thermoelectric properties of n-type Sr x M y Co4Sb12 (M=Yb, Ba) double-filled skutterudites

Alkaline-earth (AE) and rare-earth (RE) atoms are usually used as void fillers in the caged compound CoSb₃ to improve the thermoelectric performance of the filled system. Polycrystalline single-filled Sr_0.21Co₄Sb₁₂, double-filled Sr _x Yb _y Co₄Sb₁₂, and Sr _x Ba _y Co₄Sb₁₂ skutterudites have been synthesized. Rietveld structure refinement confirms that both Sr and Yb occupy the Sb-icosaedron voids in skutterudite frame work. In this paper, we report the high-temperature thermoelectric properties including electrical conductivity, Seebeck coefficient, and thermal conductivity. Double filling of the Sr–Yb combinations shows a stronger suppression on lattice thermal conductivity than that of Sr–Ba combination. Furthermore, the double-filled Sr _x Yb _y Co₄Sb₁₂ skutterudites exhibit a much higher power factor than the Sr-filled system. The maximum power factor for Sr_0.22Yb_0.03Co₄Sb_12.12 reaches 41 μW cm⁻¹ K⁻² at room temperature and 57.5 μW cm⁻¹ K⁻² at 850 K, respectively. The enhanced thermoelectric figures of merit are 1.32 for Sr _x Yb _y Co₄Sb₁₂ and 1.22 for Sr _x Ba _y Co₄Sb₁₂ at 850 K, respectively.     

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment

Reactive cosputtering is employed to prepare high-permittivity HfTiO gate dielectric on n-Ge substrate. Effects of Ge-surface pretreatment on the interface and gate leakage properties of the dielectric are investigated. Excellent performances of Al/HfTiO/GeO _x N _y /n-Ge MOS capacitor with wet–NO surface pretreatment have been achieved with a interface-state density of 2.1×10¹¹ eV⁻¹ cm⁻², equivalent oxide charge of −7.67×10¹¹ cm⁻² and gate leakage current density of 4.97×10⁻⁵ A/cm² at V _g =1 V.