Resonance photoelectron spectroscopy of TiX2 (X = S, Se, Te) titanium dichalcogenides

The photoelectron valence band spectra of TiS₂, TiSe₂, and TiTe₂ dichalcogenides are investigated in the Ti 2p-3d resonance regime. Resonance bands in the vicinity of the Fermi energy are found for TiS₂ and TiTe₂. The nature of these bands is analyzed based on model calculations of the density of electronic states in TiS₂, TiSe₂, and TiTe₂ compounds intercalated by titanium atoms. Analysis of experimental data and their comparison with model calculations showed that these bands have different origins. It is found that the resonance enhancement of an additional band observed in TiS₂ is explained by self-intercalation by titanium during the synthesis of this compound. The resonance enhancement in TiTe₂ is caused by occupation of the 3d band in Ti.     

First-principles studies of the electronic and elastic properties of Ti2GeC

We have performed first-principles studies on electronic structure and elastic properties of Ti₂GeC. The calculated band structure shows that this compound is electrical conductor. From the pressure dependence of elastic constants, we find that Ti₂GeC is most stable in the pressure range from 0 to 100 GPa. The strong Ti 3d, Ge 4p and C 2p hybridization may stabilize the structure of Ti₂GeC. By analyzing the ratio between the bulk and shear moduli, we conclude that Ti₂GeC is brittle in nature, and the brittleness of Ti₂GeC originated from the large value of Ti atom occupying the internal parameter z.     

Experimental valence-band study of Ti(NiCu) alloys with different compositions and crystal structures

The density of valence-band electronic states of Ti(NiCu) alloys with different crystal structures and elemental compositions has been studied by X-ray photoelectron spectroscopy. It has been established that the change in the crystal state initiated by a martensitic transformation or a transition from the amorphous state to the crystal state does not affect the valence-band electronic state density distribution of the Ti₅₀Ni₅₀ and Ti₅₀Ni₂₅Cu₂₅ alloys. It has been shown that a change in the elemental composition leads to a noticeable redistribution of the electronic density in alloys of the Ti₅₀Ni_{50 ? x} Cu _x system (x = 0, 10, 15, 25, 30, 38, 50 at. %). As the copper concentration in the Ti(NiCu) alloys increases, the contribution of the Ni d states in the vicinity of the Fermi level decreases, with the d band of nickel shifting toward higher binding energies, and that of copper, toward lower binding energies.     

Electronic structures and optical properties of rutile TiO2 with different point defects from DFT + U calculations

The electronic states and formation energies of four types of lattice point defects in rutile TiO₂ are studied using the first-principles calculations. The existence of oxygen vacancy leads to a deep donor defect level in the forbidden band, while the Ti interstitial forms two local states. It is predicted that oxygen vacancy prefers to combine with Ti-interstitial to form V_O–Ti_i dimer by a partial 3d electron transfer from the Ti_i to its neighboring V_O. The charge distribution between a Ti interstitial and its neighboring Ti ions partially shields the Coulomb interactions. Lastly, optical properties of these defective lattices are discussed.     

Features of hydrogen interaction in the Pd-based alloys with 3d transition metals

The effect of an alloying metal and its magnetic state on the hydrogen absorption energy has been investigated in the Pd-based alloys Pd₃Me with 3d transition metals (Me = Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) using calculations from first principles. The full-potential and linearly augmented plane wave (FP LAPW) method has been used in the local density approximation (LDA) for the exchange-correlation potential in the framework of the density functional theory (DFT). It has been found that the hydrogen solubility in an alloy increases if the centers of mass of s and d metal bands and s hydrogen band shift strongly toward the Fermi level. The changes in properties of hydrogen absorption as a function of its position in a crystal lattice structure and magnetic state of an alloy have been analyzed.     

Half-metallicity and magnetism of the quaternary inverse full-Heusler alloy Ti<Subscript>2-x</Subscript>M<Subscript>x</Subscript>CoAl (M = Nb,V) from the first-principles calculations

Using the first-principles calculations based on density functional theory, we investigate the more d-electrons doping effects on the electronic structure and magnetism of the parent inverse Heusler alloy Ti₂CoAl by the substitution of Nb and V atoms for Ti(A) and Ti(B) atoms locating at the two inequivalent sublattices. The Ti₂CoAl is half-metallic with Fermi level near the top of the minority-spin valence band and hence its spin-polarization is easily reduced by the spin-flip excitation. Our total energy calculations show that the V/Nb doping at the Ti(A)/Ti(B) site is energetically favorable compared with the Ti(B)/T(A) site due to the lower total energy. Our band structure calculations indicate that for the V doped compounds, half-metallicity can be well retained regardless of doping sites and percentages except for the case of Ti(A)-site doping with x = 1, while for Nb doped compounds, the half-metallicity persists only in Ti(B)-site doping with different percentages. For the doped compounds with half-metallicity, the Fermi level shifts from the top of minority-spin valence band to the bottom of minority-spin conduction band with increasing content of x, and typically, the doped compounds (V in Ti(A) and Ti(B) sites at x = 0.75 and 0.5, respectively; Nb in Ti(B) site at x = 0.5), whose Fermi levels are adjusted to the expected positions to effectively inhibit the spin-flip excitation are promising candidates for spintronics applications.     

Electronic structure of ZrTiO4 and HfTiO4: Self-consistent cluster calculations and X-ray spectroscopy studies

Total and partial densities of states of the constituent atoms of ZrTiO₄ and HfTiO₄ titanates have been calculated using a self-consistent cluster method as incorporated in the FEFF8 code. The calculations reveal the similarity of the electronic structure of both titanates and indicate that the valence band of the compounds under consideration is dominated by contributions of O 2p states. These states contribute throughout the whole valence-band region; however their maximum contributions occur in the upper portion of the band. Other significant contributors in the valence-band region are Ti 3d and Zr 4d states in ZrTiO₄ and Ti 3d and Hf 5d states in HfTiO₄. All the above d-like states contribute throughout the whole valence-band region of the titanates; however maximum contributions of the Ti 3d states occur in the upper portion, whilst those of the Zr 4d (Hf 5d) states are in the central portions of the valence band. The FEFF8 calculations render that the bottom of the conduction band of ZrTiO₄ and HfTiO₄ is dominated by contributions of Ti 3d^? states, with also smaller contributions of Zr 4d^?/Hf 5d^? and O 2p^? states. To verify the above FEFF8 data, the X-ray emission bands, representing the energy distributions of mainly O 2p, Ti 3d and Zr 4d states, were measured and compared on a common energy scale. These experimental data are found to be in agreement with the theoretical FEFF8 results for the electronic structure of ZrTiO₄ and HfTiO₄ titanates. Additionally, X-ray photoelectron valence-band and core-level spectra were recorded for the constituent atoms of the titanates under study.     

Valence and core state modifications in Pt3Ti

XPS data for the valence band, the Pt 4? states, and the Ti 2p states are presented for the intermetallic Pt₃Ti. Relative to the Pt valence band, the Pt₃Ti band shows a decrease in the density of states just below the Fermi level and a shift of the centroid to higher (binding) energy. Ti 2p and Pt 4? binding energies showed relatively large shifts with respect to the pure metals. These changes in the valence band density of states and core level binding energies are interpreted as arising from hybridization of the d-orbitals in both metals to form strong intermetallic bonds.     

First-principles study of photoconductivity in BaTiO3 with oxygen vacancies

The photoconductivity of BaTiO_2.5 with oxygen vacancy has been studied by the linear muffin-tin orbital method in the atomic sphere approximation (LMTO-ASA). The ground-state structure of BaTiO_2.5 is obtained by minimization of the total energy. The partial densities of states show that the occupied states at the bottom of the conduction band have primarily Ti d orbital character. The photoconductivity shows that two novel features, in the low energy side, can be attributed to the intraband transition of free electronic carriers in the vicinity of the Fermi level and the interband transition of the Ti 3d(yz) related band states, to the Ti 3d(xy,xz) related band states, respectively. In addition, it is also found that the anisotropy of photoconductivity is enhanced because of the introduction of oxygen vacancy. The system can show the conductive behavior of electronic carriers, which is qualitatively in agreement with a recent experimental finding.     

Structural, electronic and elastic properties of M2SC (M = Ti, Zr, Hf) compounds

Using ab initio calculations, we have studied the structural, electronic and elastic properties of M₂SC, with M = Ti, Zr and Hf. Geometrical optimization of the unit cell are in good agreement with the available experimental data. The band structures show that all three materials are conducting. The analysis of the site and momentum projected densities shows that the bonding is achieved through a hybridization of M-atom d states with S and C-atom p states. The Md-Sp bonds are lower in energy and are stiffer than Md-Cp bonds. The elastic constants are calculated using the static finite strain technique. We derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline M₂SC aggregates. We estimated the Debye temperature of M₂SC from the average sound velocity. This is a quantitative theoretical prediction of the elastic properties of Ti₂SC, Zr₂SC, and Hf₂SC compounds, and it still awaits experimental confirmation.     

Absorption spectroscopic study of the conduction band of titanium dichalcogenides

The L _{2, 3} spectra of titanium in the layered compound TiSe₂ and intercalated compounds Fe_1/2TiSe₂, Cr_1/3TiSe₂, and Fe_1/4TiTe₂ are studied. Theoretical calculations of the electronic structure of these compounds are performed. The experimental data and calculations suggest that the intercalation of the Cr and Fe atoms into the TiSe₂ matrix brings about a partial filling of the Ti 3d states and the spin polarization of the Cr 3d and Fe 3d states. Chemical bonds are formed through the hybridization of the d orbitals of intercalated atoms with the Ti 3d-Se 4p states of the matrix.     

Effect of hydrogen-doping on bonding properties of Ti3SiC2

Using the first principles method based on the density functional theory, we investigated the effect of hydrogen-doping on bonding properties of Ti₃SiC₂. The formation energies of hydrogen interstitials in three possible positions were calculated. The results show that hydrogen favors residing near the (0 0 1) Si plane. In these positions, hydrogen is hybridized most with 1s states of lattice atoms (Si and C), instead of Ti. The presence of hydrogen does not substantially influence the bonding nature of Ti₃SiC₂; chemical bonding is characterized by the hybridizations of Ti d-Si p and Ti d-C p states, and yields high strength. This is contrary to hydrogen-doping in transition metals, where the electron of hydrogen fills in the d bands of the metals and, as a consequence, decreases the cohesive strength of the lattice.     

Electronic band structure of In2S3 and CdIn2S4 semiconductor spinels from the data of x-ray spectroscopy and theoretical calculations

The electronic band structure of the chalcogenide spinels In₂S₃ and CdIn₂S₄ has been studied using the FEFF8 program. It is shown that the valence band top is formed by the S p states mixed with the In s and In p states for In₂S₃ or with the Cd s, Cd p, In s, and In p states for CdIn₂S₄. Compared to In₂S₃, the presence of Cd atoms in the nearest environment of S atoms in CdIn₂S₄ does not considerably affect the electronic band structure. In CdIn₂S₄ the Cd 4d states, as well as the In 4d states, form a narrow localized band shifted deep into the valence band. The theoretical results are in good agreement with the experimental x-ray photoelectron and x-ray spectra.     

Valence band structure of single crystal titanium carbide,studied by soft X-ray and ultraviolet photoelectron spectroscopy

Valence states of single crystal titatium carbide (TiC_x, X?0.88) have been studied with photon energies ranging from far ultraviolet (u.v.) to soft X-ray. The valence band consists of two peaks located at 3 and 10 eV below the Fermi level. This is in good agreement with recent APW band structure calculations that predict a strong hybridization of the Ti 3d and C 2p bands and a C 2s band at lower energy.     

Band conduction effects in the ESR spectra of semiconducting Na0.01V2O5

We report on the temperature- and orientation dependence of the ESR linewidth of d-electrons in semiconducting Na_0.01V₂O₅. The observed line narrowing results from hopping of the d-electrons between localized states. At higher temperatures a line broadening occurs which is due to excitation of the d-electrons into a conduction band. The corresponding activation energies, determined from ESR measurements, agree with values derived from electronic conductivity.     

Resonant photoemission in DyNi2Mn x rare-earth intermetallides

The electronic structure of the DyNi₂Mn _x rare-earth (RE) intermetallides whose cubic structure is similar to the structure of RT₂ compounds is studied. Resonant photoemission and X-ray absorption methods are used in the vicinity of the 2p- and 3p-excitation thresholds of transition elements and the 3p-, 3d-, and 4d-thresholds of RE metals to find the Ni, Mn 3d-, and R 4f-partial densities of the states in the valent band. The use of resonant photoemission allows us to establish features of the interaction between the unfinished 4f-shells of ions of RE metals with ions of the transition 3d-elements in RNi₂Mn _x compounds. The contributions from atoms of various elements to the structure of the valent band are separated, and the basic regularities of band formation during the introduction of manganese atoms are found.     

Energy band structure of cadmium fluoride

The electronic band structure of cadmium fluoride is calculated by a combined tight binding and pseudopotential method. The band structure is found to be rather similar in shape with that of CaF₂. In particular it is shown that the occupied cationic d⁺ bands do not perturb significantly the upper valence band predominantly composed of the F^-p-orbital. This explains the great similarity of the low energy part of the reflection spectra of CaF₂ and CdF₂.     

Zur Zustandsdichte der Übergangsmetalle

X-ray isochromats of the bcc transition metals Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, W have been measured with high resolution and under comparable conditions. These curves show, that the rigid-band-model is valid for these metals within one row of the periodic table. The width of the conduction band grows from the 3d- to the 5d-row. These results of the isochromat measurements are compared with conclusions about the density of states at the Fermi level, calculated from values of the electronic specific heat, magnetic susceptibility, and superconducting transition temperature. A comparison with theoretical band calculation shows, that a lowered value of the exchange term in the potential would bring into better agreement the widths of the conduction band, taken from calculation and from isochromat measurements.     

First-principles study on electronic structure and elastic properties of Ti2SC

We have performed first-principles study on electronic structure and elastic properties of Ti₂SC. The absence of band gap at the Fermi level and the finite value of the density of states at the Fermi energy reveal the metallic behavior of this compound. The five independent elastic constants were derived and the bulk modulus, Young's modulus, shear modulus, and Poisson's ratio were determined. The high bulk modulus and hardness was found to be originated from the strong Ti 3d-S 2p hybridization. Such strong MA bonding is unusual in the MAX phases studied so far. Ti₂SC is elastically stable and exhibits highly elastic isotropy.     

Role of hydrogen in the absorption of ionizing radiation energy by a metal-hydrogen system

Ab initio calculations of the electronic structure of pure Pd, pure Ti, and PdH_x and TiH_x (x = 1, 2, 3) systems are performed within the local density approximation. It is found that the electronic subsystem of metals containing dissolved hydrogen increases their capacity to absorb the energy of electromagnetic radiation and accumulate it for a longer time than pure metals. These two factors promote the nonequilibrium migration of hydrogen atoms and their release from metals upon exposure to ionizing radiation.