Fractional quantum Hall effect at high fillings in a two-subband electron system

Magnetotransport measurements in a clean two-dimensional electron system confined to a wide GaAs quantum well reveal that, when the electrons occupy two electric subbands, the sequences of fractional quantum Hall states observed at high fillings (ν>2) are distinctly different from those of a single-subband system. Notably, when the Fermi energy lies in the ground state Landau level of either of the subbands, no quantum Hall states are seen at the even-denominator ν=5/2 and 7/2 fillings; instead, the observed states are at ν=[i+p/(2p±1)], where i=2, 3, 4 and p=1, 2, 3, and include several new states at ν=13/5, 17/5, 18/5, 25/7, and 14/3.     

Reentrant ν=1 quantum Hall state in a two-dimensional hole system

We report the observation of a reentrant quantum Hall state at the Landau level filling factor ν=1 in a two-dimensional hole system confined to a 35-nm-wide (001) GaAs quantum well. The reentrant behavior is characterized by a weakening and eventual collapse of the ν=1 quantum Hall state in the presence of a parallel magnetic field component B(∥), followed by a strengthening and reemergence as B(∥) is further increased. The robustness of the ν=1 quantum Hall state during the transition depends strongly on the charge distribution symmetry of the quantum well, while the magnitude of B(∥) needed to invoke the transition increases with the total density of the system.     

Temperature-dependent magnetotransport around ν=1/2 in ZnO heterostructures

The sequence of prominent fractional quantum Hall states up to ν=5/11 around ν=1/2 in a high-mobility two-dimensional electron system confined at oxide heterointerface (ZnO) is analyzed in terms of the composite fermion model. The temperature dependence of R(xx) oscillations around ν=1/2 yields an estimation of the composite fermion effective mass, which increases linearly with the magnetic field. This mass is of similar value to an enhanced electron effective mass, which in itself arises from strong electron interaction. The energy gaps of fractional states and the temperature dependence of R(xx) at ν=1/2 point to large residual interactions between composite fermions.     

Quantum Hall effect in intentionally disordered two‐dimensional electron systems

In this work intentionally disordered two‐dimensional electron systems in modulation doped GaAs/GaAlAs heterostructures are studied by magnetotransport experiments. The disorder is provided by a δ‐doped layer of negatively charged beryllium acceptors. In low magnetic fields a strong negative magnetoresistance is observed that can be ascribed to magnetic‐field‐induced delocalization. At increased magnetic fields the quantum Hall effect exhibits broad Hall plateaus whose centers are shifted to higher magnetic fields, i.e. lower filling factors. This shift can be explained by an asymmetric density of states. Consistently, the transition into the insulating state of quantum Hall droplets in high magnetic fields occurs at critical filling factors around ν_c=0.4, i.e. well below the value 1/2 that is expected for symmetric disorder potentials. The insulator transition is characterized by the divergence of both the longitudinal resistance as well as the Hall resistance. This is contrary to other experiments which observe a finite Hall resistance in the insulating regime and has not been observed previously. According to recent theoretical studies the divergence of the Hall resistance points to quantum coherent transport via tunneling between quantum Hall droplets. The magnetotransport experiments are supplemented by simulations of potential landscapes for random and correlated distributions of repulsive scatterers, which enable the determination of percolation thresholds, densities of states, and oscillator strengths for far‐infrared excitations. These simulations reveal that the strong shift of the Hall plateaus and the observed critical filling factor for the insulator transition in high magnetic fields require an asymmetric density of states that can only be generated by a strongly correlated beryllium distribution. Cyclotron resonance on the same samples also indicates the possibility of correlations between the beryllium acceptors.     

Magnetic-field-induced insulating phases at large r s

Exploring a two-dimensional hole system in the large r(s) regime we found a surprisingly rich phase diagram. At the highest densities, beside the nu =1/3, 2/3, and 2/5 fractional quantum Hall states, we observe both of the previously reported high field insulating and reentrant insulating phases. As the density is lowered, the reentrant insulating phase initially strengthens, then it unexpectedly starts weakening until it completely disappears. The intricate behavior of the insulating phases can be explained by a nonmonotonic melting line in the nu-r(s) phase space.     

Phase diagram for quantum hall bilayers at nu=1

We present a phase diagram for a double quantum well bilayer electron gas in the quantum Hall regime at a total filling factor nu=1, based on exact numerical calculations of the topological Chern number matrix and the (interlayer) superfluid density. We find three phases: a quantized Hall state with pseudospin superfluidity, a quantized Hall state with pseudospin "gauge-glass" order, and a decoupled composite Fermi liquid. Comparison with experiments provides a consistent explanation of the observed quantum Hall plateau, Hall drag plateau, and vanishing Hall drag resistance, as well as the zero-bias conductance peak effect, and suggests some interesting points to pursue experimentally.     

Anomalous robustness of the ν=5/2 fractional quantum Hall state near a sharp phase boundary

We report magnetotransport measurements in wide GaAs quantum wells with a tunable density to probe the stability of the fractional quantum Hall effect at a filling factor of ν=5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy (E(F)) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once E(F) moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition.     

Tunable electron interactions and fractional quantum Hall States in graphene

The recent discovery of fractional quantum Hall (FQH) states in graphene raises the question of whether the physics of graphene offers any advantages over GaAs-based materials in exploring strongly correlated states of two-dimensional electrons. Here we propose a method to continuously tune the effective electron interactions in graphene and its bilayer by the dielectric environment of the sample. Using this method, the charge gaps of prominent FQH states, including ν=1/3 or ν=5/2 states, can be increased several times, or reduced to zero. The tunability of the interactions can be used to realize and stabilize various strongly correlated phases and explore the transitions between them.     

Zero-bias anomalies in narrow tunnel junctions in the quantum Hall regime

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν≈1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.     

Competing topological orders in the ν=12/5 quantum Hall state

We provide numerical evidence that a p(x)-ip(y) paired Bonderson-Slingerland (BS) non-Abelian hierarchy state is a strong candidate for the observed ν=12/5 quantum Hall plateau. We confirm the existence of a gapped incompressible ν=12/5 quantum Hall state with shift S=2 on the sphere, matching that of the BS state. The exact ground state of the Coulomb interaction at S=2 is shown to have a large overlap with the BS trial wave function. Larger overlaps are obtained with BS-type wave functions that are hierarchical descendants of general p(x)-ip(y) weakly paired states at ν=5/2. We perform a finite-size scaling analysis of the ground-state energies for ν=12/5 states at shifts corresponding to the BS (S=2) and 3-clustered Read-Rezayi (S=-2) universality classes. This analysis reveals very tight competition between these two non-Abelian topological orders.     

Evolution of the 7/2 fractional quantum Hall state in two-subband systems

We report the evolution of the fractional quantum Hall state (FQHS) at a total Landau level (LL) filling factor of ν=7/2 in wide GaAs quantum wells in which electrons occupy two electric subbands. The data reveal subtle and distinct evolutions as a function of density, magnetic field tilt angle, or symmetry of the charge distribution. At intermediate tilt angles, for example, we observe a strengthening of the ν=7/2 FQHS. Moreover, in a well with asymmetric change distribution, there is a developing FQHS when the LL filling factor of the symmetric subband ν(S) equals 5/2 while the antisymmetric subband has a filling factor of 1<ν(A)<2.     

The influence of quantum fluctuations on quantum hall phases at large

We have explored the behavior of a two-dimensional hole system in the regime of very low densities and hence large r_s. The electronic phases at the largest magnetic fields have surprising behavior. We found that with decreasing density the reentrant insulating phase weakens until it completely disappears. We also found that at the collapse of the reentrant insulator the nearby fractional quantum Hall liquid is unexpectedly suppressed. Both of these properties can be understood as stemming from quantum fluctuations of the insulating electronic solid.     

Spin-polarized to valley-polarized transition in graphene bilayers at ν=0 in high magnetic fields

We investigate the transverse electric field (E) dependence of the ν=0 quantum Hall state (QHS) in dual-gated graphene bilayers in high magnetic fields. The longitudinal resistivity ρ(xx) measured at ν=0 shows an insulating behavior which is strongest in the vicinity of E=0, as well as at large E fields. At a fixed perpendicular magnetic field (B), the ν=0 QHS undergoes a transition as a function of the applied E, marked by a minimum, temperature-independent ρ(xx). This observation is explained by a transition from a spin-polarized ν=0 QHS at small E fields to a valley- (layer-)polarized ν=0 QHS at large E fields. The E field value at which the transition occurs follows a linear dependence on B.     

Signatures of non-Abelian statistics in nonlinear Coulomb blockade transport

Signatures of the non-Abelian statistics of quasiparticles in the ν=5/2 quantum Hall state are predicted to be present in the current-voltage characteristics of tunneling through one or two quantum Hall puddles of Landau filling ν(a) embedded in a bulk of filling ν(b) with (ν(a),ν(b))=(2,5/2) and (ν(a),ν(b))=(5/2,2).     

Non-Abelian braiding of lattice bosons

We report on a numerical experiment in which we use time-dependent potentials to braid non-Abelian quasiparticles. We consider lattice bosons in a uniform magnetic field within the fractional quantum Hall regime, where ν, the ratio of particles to flux quanta, is near 1/2, 1, or 3/2. We introduce time-dependent potentials which move quasiparticle excitations around one another, explicitly simulating a braiding operation which could implement part of a gate in a quantum computation. We find that different braids do not commute for ν near 1 and 3/2, with Berry matrices, respectively, consistent with Ising and Fibonacci anyons. Near ν=1/2, the braids commute.     

Probing electron-electron interaction in quantum Hall systems with scanning tunneling spectroscopy

Using low-temperature scanning tunneling spectroscopy applied to the Cs-induced two-dimensional electron system (2DES) on p-type InSb(110), we probe electron-electron interaction effects in the quantum Hall regime. The 2DES is decoupled from bulk states and exhibits spreading resistance within the insulating quantum Hall phases. In quantitative agreement with calculations we find an exchange enhancement of the spin splitting. Moreover, we observe that both the spatially averaged as well as the local density of states feature a characteristic Coulomb gap at the Fermi level. These results show that electron-electron interaction can be probed down to a resolution below all relevant length scales.     

Evidence for two different solid phases of two-dimensional electrons in high magnetic fields

We have observed two different rf resonances in the frequency dependent real diagonal conductivity of very high quality two-dimensional electron systems in the high magnetic field insulating phase and interpret them as coming from two different pinned electron solid phases (labeled as "A" and "B"). The "A" resonance is observable for Landau level filling nu<2/9 [reentrant around the nu=1/5 fractional quantum Hall effect (FQHE)] and then crosses over to the different "B" resonance which dominates at sufficiently low nu. Moreover, the "A" resonance is found to show dispersion with respect to the size of the transmission line, indicating that the "A" phase has a large correlation length. We suggest that quantum correlations such as those responsible for FQHE may play an important role in giving rise to such different solids.     

Quantum Hall ferromagnetism in the presence of tunable disorder

In this Letter, we report our recent experimental results on the energy gap of the ν=1 quantum Hall state (Δ(ν=1)) in a quantum antidot array sample, where the effective disorder potential can be tuned continuously. Δ(ν=1) is nearly constant at small effective disorders, and collapses at a critical disorder. Moreover, in the weak disorder regime, Δ(ν=1) shows a B(total)(1/2) dependence in tilted magnetic field measurements, while in the strong disorder regime, Δ(ν=1) is linear in B(total), where B(total) is the total magnetic field at ν=1. We discuss our results within several models involving the quantum Hall ferromagnetic ground state and its interplay with sample disorder.     

Magnetoresistance measurements of graphene at the charge neutrality point

We report on transport measurements of the insulating state that forms at the charge neutrality point of graphene in a magnetic field. Using both conventional two-terminal measurements, sensitive to bulk and edge conductance, and Corbino measurements, sensitive only to the bulk conductance, we observed a vanishing conductance with increasing magnetic fields. By examining the resistance changes of this insulating state with varying perpendicular and in-plane fields, we probe the spin-active components of the excitations in total fields of up to 45?T. Our results indicate that the ν=0 quantum Hall state in single layer graphene is not spin-polarized.