Pulsed-Spray Radiofrequency Plasma Enhanced Chemical Vapor Deposition of CuInS2 Thin Films

Thin films of CuInS₂ were grown on various substrates at a temperature of 523 K from two metal-organic precursors using radiofrequency plasma enhanced chemical vapor deposition (PECVD). Two precursor molecules, with different solubility properties, were dissolved in appropriate solvents and sprayed into the plasma region in the PECVD chamber. The resulting films were examined for atomic composition, growth rate, crystalline orientation, and uniformity. Films made from each precursor differed in thickness, atomic composition, and crystallinity. The uniformity of the film was fairly good from near the edge to the center of the substrate, and evidence for a chalcopyrite-like structure was found in several samples deposited from one of the precursor molecules.     

Roughness assessment and wetting behavior of fluorocarbon surfaces

The wetting behavior of fluorocarbon materials has been studied with the aim of assessing the influence of the surface chemical composition and surface roughness on the water advancing and receding contact angles. Diamond like carbon and two fluorocarbon materials with different fluorine content have been prepared by plasma enhanced chemical vapor deposition and characterized by X-ray photoemission, Raman and FT-IR spectroscopies. Very rough surfaces have been obtained by deposition of thin films of these materials on polymer substrates previously subjected to plasma etching to increase their roughness. A direct correlation has been found between roughness and water contact angles while a superhydrophobic behavior (i.e., water contact angles higher than 150° and relatively low adhesion energy) was found for the films with the highest fluorine content deposited on very rough substrates. A critical evaluation of the methods currently used to assess the roughness of these surfaces by atomic force microscopy (AFM) has evidenced that calculated RMS roughness values and actual surface areas are quite dependent on both the scale of observation and image resolution. A critical discussion is carried out about the application of the Wenzel model to account for the wetting behavior of this type of surfaces.     

GeS2 and GeSe2 PECVD from GeCl4 and Various Chalcogenide Precursors

The plasma enhanced chemical vapor depositions of germanium chalcogenide thin films from germanium tetrachloride, hydrogen sulfide and alkyl chalcogenides were studied to determine the viability of these reagents for thin film deposition. Hydrogen sulfide is a commonly used reagent for this technique and was used to determine optimal reaction conditions for thin film deposition. Germanium tetrachloride, alkylsulfides and alkylselenides were also employed because of their lower potential toxicities and higher availabilities compared to their more typical congeners: germane, hydrogen sulfide and hydrogen selenide in the formation of germanium chalcogenides. Alkylsulfides were found to be unsuitable for the deposition of germanium sulfides, however alkylselenide precursors were used successfully for the deposition of germanium selenides. The relative mass flow rates, reactor pressure, substrate temperature and plasma power density were studied for their effects on germanium chalcogenide deposition. These parameters affected the composition, deposition rate, film quality, and spectroscopic properties of the deposited films.     

Vapor phase oxidative synthesis of conjugated polymers and applications

Since their discovery, electrically conductive polymers have gained immense interest both in the fields of basic and applied research. Despite their vast potential in the fabrication of efficient, flexible, and low‐cost electronic and optoelectronic devices, they are often difficult to process by wet‐chemical methods due to their very low to poor solubility in organic solvents. The use of vapor‐based synthetic routes, in which conductive polymers can be synthesized and deposited as a thin film directly on a substrate from the vapor phase, provides many unique advantages. This article discusses oxidative vapor deposition processes, primarily vapor phase polymerization and oxidative chemical vapor deposition, of conjugated polymers and their applications. The mild operating conditions (near room temperature processing) allow conformal and functional coatings of conjugated polymers on delicate substrates. © 2012 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2012     

Thin film deposition from plasmas of tetramethylsilane–helium–argon mixtures with oxygen and with nitrogen

Films were produced by plasma enhanced chemical vapor deposition (PECVD) of tetramethylsilane (TMS)–helium–argon mixtures with either oxygen or nitrogen in a vacuum system fed with radiofrequency power. Actinometric optical emission spectroscopy was used to determine trends in the concentrations of plasma species of interest (H, CH, O, CO, and CN) as a function of the ratio of the inorganic reactive gas (oxygen or nitrogen) to the monomer (TMS) in the system feed. As the ratio of oxygen to TMS in the feed is increased, the degree of oxygenation of the deposited material, as revealed by transmission infrared spectroscopy, is also increased. Similarly, the degree of nitrogenation of the films increases with increasing nitrogen to monomer ratio in the feed. Strong correlations exist between the plasma concentrations of the above-mentioned plasma species and film structure and composition. © 1998 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 36: 1873–1879, 1998     

Chemical composition and properties of films produced from hexamethyldisilazane by plasma-enhanced chemical vapor deposition

Relationships between the chemical composition of the gas phase and the properties of SiC_xN_yH_z films produced from hexamethyldisilazane by plasma-enhanced chemical vapor deposition have been studied. The plasma composition has been examined by optical emission spectroscopy. Thermal analysis of the films with simultaneous mass spectrometric detection of released gases has been performed. On the basis of the results and published data, mechanisms for the formation of films by plasma polymerization have been proposed and the film growth at a low plasma power and high reactor temperatures has been found to follow the heterogeneous mechanism.     

Effect of surface modification on the properties of plasma-polymerized hexamethyldisiloxane thin films

Plasma-polymerized hexamethyldisiloxane (pp-HMDSO) thin films have been deposited in a radiofrequency (RF) remote plasma-enhanced chemical vapor deposition (PECVD) system, on different types of substrates: silicon wafers, glass, quartz crystals, and chemiresistor structure. The as-grown thin films have been post treated in two types of reactive plasmas produced in SF₆ and O₂ gases. The effect of this surface modification on different properties of the as-grown pp-HMDSO thin film (chemical structure, elemental composition, surface morphology, film density and thickness, optical bandgap, and electrical resistivity) has been investigated. It is found that SF₆ plasma and O₂ plasma surface modifications of the as-grown pp-HMDSO thin film induce property changes different from each other. SF₆ plasma converted the as-grown pp-HMDSO film to a more porous material and caused a narrowing of its optical band gap of about 33%, while O₂ plasma induced a lowering of film electrical resistivity of about two orders of magnitude.     

Secondary ion mass spectrometry and X-ray photoelectron spectroscopy investigation on chemical vapor deposited CeO(2-)ZrO(2)-TiO(2) thin films

Mixed CeO(2)-ZrO(2) systems have attracted widespread interest for their use in three-way catalyst (TWC) technology for automotive exhaust conversion to non-toxic products. In this work, CeO(2)-ZrO(2) thin films were deposited, via chemical vapor deposition, in order to obtain nanoscale materials with a high surface-to-volume ratio, with precise control of system properties. The addition of TiO(2) as buffer layer was also investigated. Cordierite was chosen as substrate, being the usual refractory material for catalytic mufflers. The multilayers were characterized by scanning electron microscopy, X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). In particular, the combination of SIMS and XPS allowed us to investigate both surface and in-depth chemical composition, studying also film-intermixing phenomena induced by annealing processes.     

Influence of Plasma-Enhanced Chemical Vapor Deposition Parameters on Characteristics of As–Te Chalcogenide Films

First time the method of plasma-enhanced chemical vapor deposition was used for preparation of As–Te chalcogenide films of different chemical and phase composition. The samples were synthesized via direct interaction of arsenic and tellurium vapors into low-temperature non-equilibrium RF (40 MHz) plasma discharge at reduced pressure (0.1 Torr). The plasma parameters such as temperature and concentration of electrons were measured by moving double probe diagnostic system. The dependence of solid phase radial distribution on plasma characteristics was established. Besides, the phase and structural evolution of As–Te films based on equilibrium coexistence of two phases (AsTe and As₂Te₃) and implemented by changing of the ratio of the initial substances in gas phase has been studied and discussed.     

Plasma chemical vapor deposition of TiN

Experiments indicate that the temperature in chemical vapor deposition (CVD) of TiN can be decreased from about 1000°C in conventional CVD to about 500°C by the application of a D.C. nonequilibrium plasma. The hardness of the TiN film is greater than 2000 kg/mm² (Vickers). The effect of pressure, ratio of gas mixture, and discharge parameters on the film deposition rate, its hardness, and microstructures has been studied.     

Deposition of SiO2-Like Films by HMDSN/O2 Plasmas at Low Pressure in a MMP-DECR Reactor

The effects of process parameters such as O₂/HMDSN (hexamethyldisilazane) ratio, microwave discharge power and deposition pressure on the growth rate, chemical bonding nature, and refractive index of thin films deposited by microwave plasma from HMDSN with oxygen, have been investigated. The plasma was created in a Microwave Multipolar reactor excited by Distributed Electron Cyclotron Resonance. The films were deposited at room temperature and characterized by Fourier Transform Infrared spectroscopy and ellipsometry. Growth rate increased with the discharge power P or the deposition pressure but decreased significantly with increasing O₂/HMDSN ratio. A large change in the film composition was observed when the O₂/HMDSN ratio was varied: films deposited with only HMDSN precursor are polymer-like but as the O₂/HMDSN ratio increased, organic groups decreased. For relative pressure values over 70%, deposited films are SiO₂-like with refractive index values close to those found for thermal silicon dioxide.     

Depth Profiled XPS Analysis of a Polymerized Silicon-Carbon Thin Film

An in situ study of the chemical properties of a polymerized silicon-carbon thin film has been completed. The deposited film was created by plasma enhanced chemical vapor deposition of trimethylsilane onto an aluminum substrate. Depth profiled X-ray photoelectron spectra were obtained. An analysis of the data shows varying chemistry throughout the film as well as an interaction between silicon and aluminum/aluminum oxide at the bi-layer interface.     

Effects of the polarizability and packing density of transparent oxide films on water vapor permeation

The tin oxide and silicon oxide films have been deposited on polycarbonate substrates as gas barrier films, using a thermal evaporation and ion beam assisted deposition process. The oxide films deposited by ion beam assisted deposition show a much lower water vapor transmission rate than those by thermal evaporation. The tin oxide films show a similar water vapor transmission rate to the silicon oxide films in thermal evaporation but a lower water vapor transmission rate in IBAD. These results are related to the fact that the permeation of water vapor with a large dipole moment is affected by the chemistry of oxides and the packing density of the oxide films. The permeation mechanism of water vapor through the oxide films is discussed in terms of the chemical interaction with water vapor and the microstructure of the oxide films. The chemical interaction of water vapor with oxide films has been investigated by the refractive index from ellipsometry and the OH group peak from X-ray photoelectron spectroscopy, and the microstructure of the composite oxide films was characterized using atomic force microscopy and a transmission electron microscope. The activation energy for water vapor permeation through the oxide films has also been measured in relation to the permeation mechanism of water vapor. The diffusivity of water vapor for the tin oxide films has been calculated from the time lag plot, and its implications are discussed.     

Structure,Composition, Mechanical,and Tribological Properties of BCN Films Deposited by Plasma Enhanced Chemical Vapor Deposition

In this work thin BCN films were deposited by plasma enhanced chemical vapor deposition (PECVD) using chloridic precursors. Through adjusting the BCl₃ content in the inlet gas mixture the chemical composition of the deposited films was changed from carbon rich to boron rich. Based on optical emission spectroscopy (OES) measurements, a correlation between film composition and precursor species concentration in the plasma was established. The films were amorphous as detected by grazing incidence X-ray diffraction (GIXRD). The hardness and the elastic modulus have maximal values of 25.5±1.2 and 191±6 GPa, respectively, for the films with a boron concentration of 45.2 at.%. GIXRD data suggest that a depletion in boron content may initiate the formation of graphitic domains in the amorphous matrix. The observed degradation of the mechanical properties is associated with the graphitization. The tribological behavior was studied with a tribometer operated in pin-on-plate configuration at the temperatures 25 and 400°C. The wear mechanisms were discussed with respect to the formation of a boric acid surface layer which was detected by reflection electron energy loss spectroscopy (REELS) analysis.     

The Application of Nano-SiOx Coatings as Migration Resistance Layer by Plasma Enhanced Chemical Vapor Deposition

Accumulative intake of plasticizers that are generally used to produce flexibility of webs in plastics has been proven to cause reproductive system problems and women??s infertility, and long-term consumption may even cause cancer. Hence a nano-scale layer, named as functional barrier layer, was deposited on the plastic surface to prevent plasticizer diethylhexyl phthalate (DEHP) migration from food-contact materials to foods. The feasibility of a functional barrier layer, i.e. SiO_x coating through plasma enhanced chemical vapor deposition process was then described in this paper. In this research we used Fourier transform infrared spectroscope to analyze the chemical composition of the coatings, scanning electron microscope to explore the topography of the coating surfaces, surface profilemeter to measure coating thickness in plastics, and high-performance liquid chromatography to evaluate the barrier properties of coatings. The results have clearly shown that the coatings can perfectly block the migration of the DEHP from plastics to their containers. It is to be noted that process parameters had a critical influence on the block properties of coatings. When the deposition conditions of SiO_x coatings were optimized, i.e. the discharge power of 50?W, 4:1 of O₂: HMDSO ratio and the thickness of 100?nm, the 71.2?% DEHP was effectively blocked in the plastic film.     

Deposition conditions influence the postdeposition oxidation of methyl methacrylate plasma polymer films

Plasma polymer films were deposited from methyl methacrylate (MMA) vapor under various plasma conditions and XPS and FTIR used to study the changes to the compositions of the films as they were stored in air for longer than 1 year. The plasma power input per monomer mass unit (W/FM) markedly affected the composition of the freshly deposited MMA plasma polymers. A low value of W/FM led to a high degree of retention of the original monomer structure, whereas a high value of W/FM resulted in substantial monomer fragmentation and the formation of a partially unsaturated material considerably different to conventional PMMA. As the MMA plasma coatings were stored in ambient air after fabrication, all showed spontaneous oxidative changes to their composition, but the extents and reaction products differed substantially. Deposition at low W/FM led to moderate oxidative changes, whereas high power led to a pronounced increase in the oxygen content over time and resulted in a wide range of carbon–oxygen functionalities in the aged material. As the initial compositions/plasma deposition conditions thus influenced the oxidative postdeposition reactions, MMA plasma polymers deposited under different conditions not only varied in their initial composition but then became even more diverse as they aged. © 1998 John Wiley & Sons, Inc. J Polym Sci A: Polym Chem 36: 985–1000, 1998     

Optical and mechanical properties of films obtained by plasma decomposition of hexamethyldisilazane

Films of SiC _x N _y H _z composition are obtained by chemical deposition from the vapor phase via the activation of high-frequency discharge plasma (PECVD). The organosilicon compound hexamethyldisilazane, which contains all the atoms needed for the formation of films, is used as our initial material. Physicochemical properties of the films are studied by spectroscopy of surface acoustic waves, measuring the bending of a film-substrate system, ellipsometry, and infrared spectroscopy. Important features of the films?? structure are established. It is shown that at temperatures of deposition below 400°C, films contain chemical bonds of an organic nature, have very low values of density and the Young modulus, and exhibit high levels of elasticity, indicating their polymer-like structure. It is established that at higher temperatures of deposition, films are inorganic composite materials.     

Scalable Production of Ambient Stable Hybrid Bismuth-Based Materials: AACVD of Phenethylammonium Bismuth Iodide Films**

Large homogeneous and adherent coatings of phenethylammonium bismuth iodide were produced using the cost-effective and scalable aerosol-assisted chemical vapor deposition (AACVD) methodology. The film morphology was found to depend on the deposition conditions and substrates, resulting in different optical properties to those reported from their spin-coated counterparts. Optoelectronic characterization revealed band bending effects occurring between the hybrid material and semiconducting substrates (TiO₂ and FTO) due to heterojunction formation, and the optical bandgap of the hybrid material was calculated from UV-visible and PL spectrometry to be 2.05 eV. Maximum values for hydrophobicity and crystallographic preferential orientation were observed for films deposited on FTO/glass substrates, closely followed by values from films deposited on TiO₂/glass substrates.     

Atmospheric Pressure Plasma Discharge for Polysiloxane Thin Films Deposition and Comparison with Low Pressure Process

An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process.     

Effects of the reaction atmosphere composition on the synthesis of single and multiwalled nitrogen-doped nanotubes

Single and multiwalled nitrogen-doped carbon nanotubes were grown by chemical vapor deposition varying the feedstock composition between pure acetonitrile and ethanol/acetonitrile mixtures. The advantage of using CN sources that develop close vapor pressure values has been used in order to elucidate the effects of the reaction atmosphere in the synthesis of N-doped nanotubes. Our findings show that the morphology of the nanotube material depends strongly on the composition of the reaction atmosphere. When carrying out the experiments in an atmosphere solely determined by the vapor pressure of the feedstock components, improved homogeneity is achieved with pure CN sources or low concentration of the foreign solute. Under these conditions the temperature has strong influence in the diameter distribution.