A facile metal catalyst free route to synthesize boron doped (0.6%–1.0%) carbon nanotubes via ceramic nanowires in which the formation of the nanowires (probably serving as templates), the carbon nanotubes and their doping all occur unanimously in the reaction, is presented.
Osmium diboride has been known for some time as a low compressibility material and a superhard material. It is suitable for hard coating applications. It is also a superconductor below 2.1 K. Using first‐principles calculations, the author investigated the geometry of its Fermi surface (FS) and calculated the related physical quantities. The theoretical results are used to predict the frequencies of the Shubnikov–de Haas quantum oscillations. Comparison with recent measurements of the magneto‐resistance oscillations in osmium diboride is made.
We propose a theory of thin film photovoltaics in which one of the polycrystalline films is made of a pyroelectric material grains such as CdS. That film is shown to generate strong polarization improving the device open circuit voltage. Implications and supporting facts for the major photovoltaic types based on CdTe and CuIn(Ga)Se2 absorber layers are discussed.
Graphene, the two‐dimensional form of carbon presents outstanding electronic and transport properties. This gives hope for the development of applications in nanoelectronics. However, for industrial purpose, graphene has to be supported by a substrate. We focus here on the graphene‐on‐SiC system to discuss how the SiC substrate interacts with the graphene layer and to show the effect of the interface on graphene atomic and electronic structures.
An original approach is proposed to study the magnetic phase separation phenomenon. It is based on the registration of the noise‐like FMR Fine Structure (FMR FS) caused by the magnetic interparticle dipole–dipole interaction between spatially separated ferromagnetic regions. Data obtained for a La0.7Pb0.3MnO3 single crystal point to the existence of spatially separated ferromagnetic regions. It is shown that FMR FS of the La0.7Pb0.3MnO3 single crystal is temperature reversible and disappears at the maximum of magnetoresistance.
ZnO thin films with a rippled surface structure were used as electron‐collecting layers of inverted organic photovoltaics (OPVs). Using additional ultrathin layers of ZnO and TiO2 fabricated using atomic layer deposition (ALD), not only the power‐conversion efficiency of the OPVs could be increased (up to 3.5%), but also the photovoltaic performance became nearly constant within 100 days without any additional encapsulations of the solar cells under ambient conditions.
Optically transparent and high‐quality hybrid ZnO nanoparticle and anthracene embedded polyphenylsiloxane (PPS) glass films were spin‐coated on quartz substrates. A strong Förster resonant energy transfer (FRET) process was indicated by the observation of quenching of the ZnO emission and an enhancement of the anthracene emission at room temperature. The efficiency of this energy transfer between ZnO and the S1 vibronic states of the anthracene molecules can be optimized to exceed 90%.
Diffraction micro gratings have been written in ZnO:Al thin films using a picosecond laser operating at 355 nm. Micro gratings of 20 µm diameter with a period of 860 nm show a groove depth up to 120 nm. The total transmittance of square‐centimeter‐size grating‐textured ZnO:Al films was almost unchanged after grating formation, while the sheet resistance increased moderately. The textured films reached haze values of 9% at 700 nm. This simple texturing method can be applied also to ZnO:Al films that cannot be texture etched.
We show, using Density Functional Theory (DFT) calculations, that compressed AgF2 should turn above 17 GPa into a layered narrow‐gap material with a huge intralayer antiferromagnetic (AFM) coupling constant, reminiscent of those seen for parent copper (II) oxides (e.g., La2CuO4). Compressed AgF2 is thus the first candidate for the non‐oxocuprate two‐dimensional antiferromagnet. Calculations indicate that AgF2 could subsequently be metallised above 38 GPa, likely giving rise to superconductivity (SC).
We demonstrate the monolithic integration of a microstructured organic photodiode with a planar optical stripe waveguide. The manufacturing of this waveguide‐integrated organic photodiode is based on an UV photolithography process. The integration of photodiodes with optical waveguides represents an essential building block in the field of optoelectronic‐photonic integrated circuits.
A passive micro‐displacement sensor (for ～μm displacement) was fabricated based on a magnetoelectric laminate, in which the displacement change can result in a change of the magnetic flux around the magnetoelectric sensor. The displacement measurement was realized by measuring the magnetoelectric output voltage. The displacement detecting coefficient was ～2.5 mV/μm at a frequency of ～1 kHz. This passive displacement sensor possesses the advantages of low cost, high resolution, low energy consumption and good linearity and has potential for application in future displacement detectors.
We report on wet etching of photomodified regions in crystalline sapphire using KOH solution. Tightly focused femtosecond laser pulses (150 fs at 800 nm wavelength) were used to create void structures enclosed in an amorphised sapphire shell inside the bulk of a crystalline host. The diameter of the amorphous regions can be controlled by pulse energy and was typically 0.5–1.5 µm. The etching rate depends on the distance between adjacent irradiation spots, pulse energy, concentration of etchant and ultrasonic agitation.
We demonstrate by a Monte Carlo simulation that the reflection of quasi‐ballistically accelerated electrons at the interfaces of an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As double‐heterojunction structure is able to generate current oscillations at frequencies in the THz range. The possibility of taking advantage of this mechanism to generate THz signals has been demonstrated in structures with well dimension close to the electron ballistic transport length in In0.53Ga0.47As.
Monte‐Carlo simulations predict that a local correlated disorder is responsible for many of the novel transport and magnetic properties of colossal magnetoresistance (CMR) materials such as manganites. One important prediction of these models is that the resistivity at the metal–insulator transition (MIT) in manganites depends strongly on the correlated quenched disorder. However, experimental confirmation has been challenging since it is difficult to control the amount of disorder in these compounds. We carried out experiments on Sm0.55Sr0.45MnO3, a prototypical CMR manganite with a sharp MIT, whereby the oxygen‐related disorder is systematically enhanced by low temperature thermal activation. We observe dramatic changes in the temperature dependence of resistivity at the MIT as the amount of quenched disorder is increased, occurring in a manner that is in agreement with theoretical predictions.
We have shown that nitrophenyl groups may be added to the surface of few‐layer epitaxial graphene (EG) by the formation of covalent carbon–carbon bonds thereby changing the electronic structure and transport properties of EG from near‐metallic to semiconducting. In the present Letter we discuss the opportunities afforded by such chemical processes to engineer device functionality in graphene by modification of the electronic properties without physical patterning.
A high‐stability Eu complex has been achieved by coating with a silica glass via a low temperature sol–gel process using deuterated methanol. A three‐dimensional glass network protects the Eu complex from free oxygen and/or water to change the ligand structure. In addition, the chemical bond of the deuterated Eu complex is more stable than that of the conventional Eu complex. Therefore, we achieved a high‐thermal‐stability Eu complex encapsulated by a sol–gel derived silica glass using deuterated methanol instead of ethanol.
Interaction between negatively charged Nafion® and a positively charged polybenzimidazole‐decorated carbon nanotube leads to the formation of an ionic complex with high charge density for proton conduction, which can lead to an improvement in transport properties. Here we investigate the high‐temperature and low‐humidity proton conductivity of this nanocomposite membrane as a potential membrane for fuel cell applications.
We present a simplified process sequence for the fabrication of large area n‐type silicon solar cells. The boron emitter and full area phosphorus back surface field are formed in one single high temperature step using doped glasses deposited by plasma enhanced chemical vapour deposition (PECVD) as diffusion sources. By optimizing the gas composition during the PECVD process, we not only prevent the formation of a boron rich layer (BRL), but also achieve doping profiles that exhibit a low dark saturation current density while allowing for contact formation by screen printing. The presented co‐diffusion process allows for major process simplification compared to the state of the art diffusion process relying on multiple high temperature processes, masking and wet chemistry steps.
The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.
