Electric-field dependence of dielectric properties of sol-gel derived Ba(Zr0.2Ti0.8)O3 ceramics

The effect of a dc bias field on the diffuse phase transition and nonlinear dielectric properties of sol-gel derived Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are investigated. Diffuse phase transitions were observed in BZT ceramics and the Curie–Weiss exponent (CWE) was γ∼2.0. The dielectric constant versus temperature characteristics and the γ in the modified Curie–Weiss law, ε ⁻¹=ε _m ⁻¹[1+(T−T _m ) ^γ /C₁](1≤γ≤2), as a function of the dc bias field was obtained for BZT ceramics. The results indicated that γ is a function of dc bias field, and the γ value decreased from 2.04 to 1.73 with dc bias field increasing from 0 to 20 kV/cm. The dielectric constant decreases with increasing dc bias field, indicating a field-induced phase transition. The dc bias field has a strong effect on the position of the dielectric peak and affects the magnitude of the dielectric properties over a rather wide temperature range. The peak temperature of the dielectric loss does not coincide with the dielectric peak and an obvious minimum value for the dielectric loss at the temperature of the dielectric peaks is observed. At room temperature, 300 K, the high tunability (K=80%), the low loss tangent (≈0.01) and the large FOM (74), clearly imply that these ceramics are promising materials for tunable capacitor-device applications.     

Frequency dependent magnetoconductivity and conductivity study in Ni-dispersed silica nano-composite produced by sol-gel technique

The low frequency (20 Hz to 1 MHz) ac conductivity and magnetoconductivity behaviour of ceramic nanocomposite (Ni-SiO₂) at low temperature down to 77 K are reported. The frequency dependent conductivity followed the power law, σ(ω) ∝ ω ^s . The fractional exponent s is a function of temperature and was found to increase with increasing temperature. This type of variation may be attributed to small polaron hopping. A peak present in the loss tangent indicates the presence of a Debye relaxation process. The magnetoconductivity of the samples is positive, which strongly depends on frequency. A firm theoretical explanation of frequency dependent magnetoconductivity is still lacking.     

Scattering times in AlGaN/GaN two-dimensional electron gas from magnetotransport measurements

The various scattering times of two-dimensional electron gas were investigated in modulation-doped Al_0.22Ga_0.78N/GaN quantum wells by means of magnetotransport measurements. The ratio of transport and quantum scattering times, τ_t/τ_q∼1, shows that the dominant mobility-limiting mechanisms are short-range scattering potentials. The low-field magnetoresistance shows the weak antilocalization and localization phenomenon from which the spin-orbit scattering and inelastic scattering times are obtained. The inelastic scattering time is found to follow the T⁻¹ law, indicating that electron-electron scattering with small energy transfer is the dominant inelastic process.     

Electrical and optical properties of single crystal In2Te3 and Ga2Te3

Electrical conductivity and thermopower measurements are reported for the defect semiconductors p-In₂Te₃ and n-Ga₂Te₃. The hole mobility μ_p in the former varied as Tⁿwheren=+5.98 forT<350 K and n=-4.13 forT>350 K showing a maximum of 210 cm²V^-1 sec^-1 at 350 K. Electron mobility in n-Ga₂Te₃ also went through a maximum at 320 K. The optical band-gaps for both were found to be direct, with values of 1.01 and 1.08 eV for In₂Te₃ and Ga₂Te₃ respectively at 300 K. Pronounced effects of annealing on TEP and optical absorption gave evidence of defect ordering at low temperatures followed by defect creation at T>350 K.     

Radiative corrections in Ke4 decay

The final state interaction of pions in the decay K ^±→π ⁺ π ⁻ e ^± ν allows one to obtain the value of the isospin and angular momentum zero pion–pion scattering length a ₀⁰. To extract this quantity from experimental data the radiative corrections (RC) have to be taken into account. Based on the lowest order results and the factorization hypothesis, we get the expressions for RC in the leading and next-to leading logarithmical approximation. It is shown that the decay width dependence on the lepton mass m _e through the parameter s = \fraca2p(ln\fracM²m_e²-1)\sigma=\frac{\alpha}{2\pi}(\ln\frac{M^{2}}{m_{e}^{2}}-1) has the standard form of the Drell–Yan process and is proportional to the Sommerfeld–Sakharov factor. The numerical estimations are presented.     

Bounds on charged lepton mixing with exotic charged leptons

We examine the effects of mixing induced light heavy charged lepton neutral currents on the partial wave amplitude for the process l⁺l⁻ →ZZ (withl = e,μ or τ). By imposing the constraints that the amplitude should not exceed the perturbative unitarity limit at high energy (√s = Λ), we obtain bounds on light heavy charged lepton mixing parameter sin²(2θ _L ^a ) where θ _L ^a is the mixing angle of the ordinary charged lepton with its exotic partner. For Λ = 1 TeV, no bound is obtained on sin² (2θ _L ^a ) form _E < 0.69 TeV. However, sin² (2θ _L ^a ) ≤ 1.52×10⁻⁵ form _E = 5 TeV, sin² (2θ _L ^a ) ≤ 2.41 ×10⁻⁷ form _E = 10 TeV. Similarity for Λ = ∞ no bound is obtained on sin² (2θ _L ^a ) for m_E < 1.97 TeV and sin² (2θ _L ^a ) ≤ 0.15 form _E = 5 TeV and sin² (2θ _L ^a ) ≤ 3.88×10^-2 form _E = 10 TeV.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Electro- and magnetotransport in La0.67Ba0.33MnO3 nanosized films coherently grown on a vicinally polished (LaAlO3)0.29 + (SrAl0.5Ta0.5O3)0.71 substrate

The structure, orientation, and the response of electroresistance to magnetic field H and varying temperature T have been studied for 30-nm-thick La_0.67Ba_0.33MnO₃ (LBMO) films. The deviation of the [001] direction in manganite layers from the normal to the plane of the (LaAlO₃)_0.29 + (SrAl_0.5Ta_0.5O₃)_0.71 substrate strictly corresponds to the vicinal angle of the latter. The minimum yield determined from 227-keV proton scattering spectra is 0.025, signifying a high order of the cationic sublattice in the films. The biaxial compression of stable nuclei of the manganite phase affects their stoichiometry, thus contributing to the depletion of LBMO films in the alkaline-earth element. The maximum electroresistance values have been observed in the films grown at T _max ≈ 320 K, a temperature about 20 K lower than the Curie temperature of the corresponding bulk single crystals, and the maximum magnetoresistance (MR ≈ −0.42, μ₀ H = 2 T) occurs at T ≈ 300 K. At low temperatures (T < T _max/3) and μ₀ H < 0.45 T, the electroresistance response of LBMO films to a magnetic field materially depends on the anisotropic magnetoresistance and the intensity of hole scattering from domain walls; when μ₀ H > 0.5 T, the major current-carrier relaxation mechanism is the interaction with magnons.     

Interaction and localization effects in two-dimensional film of superconductor at T > Tc

The magnetic field and temperature dependence of the resistance of thin Al films have been investigated at T > T_c (T_c - superconducting transition temperature). The results are explained on the basis of localization and electron-electron interaction theory in two-dimensional disordered systems. The temperature dependence of inelastic scattering time and interaction constant for such films is found.     

Electrical properties of amorphous (Co45Fe45Zr10)x(Al2O3)1?x nanocomposites

The electrical properties of (Co₄₅Fe₄₅Zr₁₀)_x(Al₂O₃)_1−x granular nanocomposites have been studied. The concentration dependences of electrical resistivity are S-shaped (in accordance with the percolation theory of conduction) with a threshold at a metallic component concentration of ∼41 at. %. An analysis of the temperature behavior carried out in the range 300–973 K revealed that structural relaxation and crystallization of the amorphous phase are accompanied by a decrease in the electrical resistivity of the composites above the percolation threshold and by its increase below the percolation threshold. For metallic phase concentrations x<41 at. %, variable range hopping conduction over localized states near the Fermi level was found to be dominant at low temperatures (77–180 K). A further increase in temperature brings about a crossover of the conduction mechanism from Mott’s law ln(σ) ∝ (1/T)^1/4 to ln(σ) ∝ (1/T)^1/2. A model of inelastic resonance tunneling over a chain of localized states of the dielectric matrix was used to find the average number of localized states involved in the charge transport between metallic grains. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 2076–2082. Original Russian Text Copyright ? 2004 by Kalinin, Remizov, Sitnikov.     

ψ1 of FexNi80−xB18Si2 alloys near the percolation threshold

Accurate measurements of the static magnetic susceptibility of amorphous Fe_xNi_80?xB₁₈Si₂ alloys with a concentration just above the critical one for the onset of ferromagnetism are reported. The effective critical exponent ψ¹ is found to vary non-monotonically with temperature. Shallow maxima in ψ¹ occur at increasing reduced temperatures (t=(T?T_c)/T_c) for decreasing Fe content (x). At elevated temperatures ψ¹ decreases with t but it does not reach the mean field value even for t=13. The results are consistent with the predictions of recent theoretical models.     

Interplay of localization and superconducting fluctuations above the critical point

A review of some developments in localization effects on conductivity and magnetoconductivity is given. The determination of inelastic scattering rates for electrons in thin disordered metallic films is emphasized. In two-dimensional disordered superconductors aboveT _c , the superconducting fluctuations play an essential role. Recent work on the interplay of localization and superconducting fluctuation effects in determining the magnetoconductivity and the inelastic rate is described.     

The effects of elements doping on transport and thermoelectric properties of Sr3Ti2O7

The Ruddlesden–Popper (RP) phase compounds (Sr_0.95R_0.05)₃Ti₂O₇ (R=Er, Y, Dy, Gd, Eu, Sm, Nd and La) were prepared, and their transport and thermoelectric properties were investigated. The results indicate that high-T electrical resistivity ρ (300 K<T<1000 K) increases monotonically with temperature and basically has a relation ρ∝T^M, with M varying from 0.91 to 1.92 at temperatures T>~650 K, suggesting acoustic phonon scattering is dominant. At low temperatures (5 K<T<300 K), ρ for (Sr_0.95R_0.05)₃Ti₂O₇ (R=Nd and La) decreases monotonously with decreasing temperature, whereas ρ for (Sr_0.95R_0.05)₃Ti₂O₇ (R=Er, Y, Dy, Gd, Eu and Sm) decreases first, and then increases instead as T decreases to a critical temperature T_c. Moreover, electrical conductivity σ∝T^1/2 holds at lower temperatures, indicating that the electron–electron interaction caused by the presence of disorder dominates the transport process at the low temperatures. Besides, experiments show that at T<~400 K the lattice thermal conductivity of the doped compounds basically decreases with increase of the atomic mass of dopants. Generally, the figure of merit (ZT) at 1000 K increases first, and then decreases with the increase of the dopants' ionic radius, and the largest ZT is achieved in (Sr_0.95Gd_0.05)₃Ti₂O₇ mainly owing to its lower lattice thermal conductivity.     

Structure and low-temperature properties of Ba8Ni6Ge40

Structural, magnetic, heat capacity, electrical and thermal transport properties are reported on polycrystalline Ba₈Ni₆Ge₄₀. Ba₈Ni₆Ge₄₀ crystallizes in a cubic type I clathrate structure with unit cell a=10.5179 (4) Å. It is diamagnetic with susceptibility χ_dia=−1.71×10^-6 emu/g Oe. An Einstein temperature 75 K and a Debye temperature 307 K are estimated from heat capacity data. It exhibits n-type conducting behavior below 300 K. It shows high Seebeck coefficients (−111×10^-6 V/K), low thermal conductivity (2.25 W/K m), and low electrical resistivity (8.8 mΩ cm) at 300 K.     

Optical properties of new organic conductors based on the BEDT-TSeF molecule (the κ-(BETS)4Hg2.84Br8 superconductor and κ-(BETS)4Hg3Cl8 Metal) in the range 300–15 K

Polarized reflectance and optical conductivity spectra of single crystals of two new isostructural organic conductors based on the BEDT-TSeF molecule, namely, the κ-(BETS)₄Hg_2.84Br₈ superconductor (T _c =2 K) and the κ-(BETS)₄Hg₃Cl₈ metal, which undergoes a smooth transition to the dielectric state near 35 K, have been obtained in the spectral region 700–6500 cm⁻¹ at temperatures of 300–15 K. At 300 K, the spectra of both compounds are nearly identical and differ from the Drude spectrum characteristic of metals. The nature of the observed difference is discussed, and the spectra are described in terms of a cluster approach with inclusion of electron-electron correlations in the Hubbard approximation combined with the Drude model. The parameters of the theory were determined, including the electron transfer integrals between molecules in a cluster. The spectra in the conducting plane of the crystals were found to be essentially anisotropic, which should be assigned to specific features of in-plane interaction between molecules. The spectra of the superconductor and the metal become increasingly different as the temperature is lowered. The spectra of the metal obtained for T<150 K exhibit splitting of the broad electronic maximum in the mid-IR region into two bands, which is accompanied by a splitting of a vibronic feature deriving from electron interaction with intramolecular BETS vibrations of ν₃(A _g ) symmetry. No such splitting is observed in the superconductor spectra with decreasing temperature. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 11, 2004, pp. 1921–1929. Original Russian Text Copyright ? 2004 by Vlasova, Drichko, Petrov, Semkin, Zhilyaeva, Lyubovskaya, Olejniczak, A. Kobayashi, H. Kobayashi.     

Crystal field interactions in DyFe2Si2 and DyFe2Ge2

Two sets of crystal field (CF) parameters have been proposed for DyFe₂Si₂, none of which could provide a simultaneous explanation of the available experimental data, particularly at low temperatures (below 100 K). The set derived from magnetic studies could not even explain the thermal variation of the magnetic specific heat reported in the same work. Although the set of CF parameters, obtained from a fit to the Mossbauer spectra, could provide a fairly good explanation of the thermal variation of the magnetic susceptibilities along the c-axis, it could not explain the observed thermal variation of other reported experimental findings. In the present work, an appraisal of the CF parameters proposed earlier has been done and a set of CF parameters has been derived, which provide a simultaneous explanation of all the available experimental data. The effect of substitution of Ge for Si on the magnetic properties and the magnetic specific heat of DyFe₂Si₂ has been studied in the framework of one electron crystal field model. The inelastic neutron scattering studies and EPR measurements are required to check the predicted Stark energies and the paramagnetic resonance g-values.     

Magnetoconductance of Au-SiO2 films

Measurements of the magnetoconductance in Au-SiO₂ thin films show that spin-orbit coupling is dominant at low temperatures. By fitting the data with the theory of Maekawa and Fukuyama the temperature dependence of the inelastic scattering time has been determined to be approximately T>^?1.5. The spin-orbit scattering times turn out to be significantly smaller than those used by Bergmann.     

Galvanomagnetic and thermoelectric properties of p-Bi2?xSbxTe3?ySey solid solutions at low temperatures (<220 K)

The galvanomagnetic and thermoelectric properties of p-Bi_2−x Sb_xTe_3−y Se_y solid solutions (x≤1.2, y≤0.09) are studied for various carrier concentrations. The degeneracy parameter β_d governing the scattering processes in solid solutions was calculated in terms of the many-valley energy spectrum model. The data on the degeneracy parameter and the Seebeck coefficient α were used to calculate the effective scattering parameter r _eff and the reduced Fermi level η. The parameter r _eff was found to depend on the carrier concentration in the materials studied. The temperature dependences of the effective density-of-states mass m/m ₀ and mobility μ₀ in samples with various carrier concentrations were determined. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 8, 2004, pp. 13662–1371. Original Russian Text Copyright ? 2004 by Luk’yanova, Kutasov, Popov, Konstantinov.     

Influence of carbon concentration on structural, magnetic and electrical transport properties for antiperovskite compounds AlCxMn3

The structural, magnetic and transport properties of the antiperovskite AlC_xMn₃ (1.0≤x≤1.4) are investigated. It is found that the lattice parameter a increases monotonously with nominal carbon concentration x. The Curie temperature T_C increases with increasing x from 1.0 to 1.1 and then decreases with further increasing x. The highest T_C value is 364 K, about 70 K higher than that of stoichiometric AlCMn₃ reported previously. This may be attributed to a competition between the lattice expansion and the strong Mn 3d-C 2p hybridization. Below 100 K, the resistivity can be well described as ρ(T)=ρ₀+AT², corresponding to the electron-electron scattering. A increases with x, suggesting certain changes in the electronic structure, e.g. carrier density. Above 250 K, all ρ(T) curves depart from the linear dependence on temperature and seem to take on a tendency towards saturation.