QWIP focal plane arrays on InP substrates for single and dual band thermal imagers

Alternative material systems on InP substrate provide certain advantages for mid-wavelength infrared (MWIR), long-wavelength infrared (LWIR) and dual band MWIR/LWIR quantum well infrared photodetector (QWIP) focal plane arrays (FPAs). While InP/InGaAs and InP/InGaAsP LWIR QWIPs provide much higher responsivity when compared to the AlGaAs/GaAs QWIPs, AlInAs/InGaAs system facilitates completely lattice matched single band MWIR and dual band MWIR/LWIR FPAs.We present an extensive review of the studies on InP based single and dual band QWIPs. While reviewing the characteristics of InP/InGaAs and InP/InGaAsP LWIR QWIPs at large format FPA level, we experimentally demonstrate that the cut-off wavelength of AlInAs/InGaAs QWIPs can be tuned in a sufficiently large range in the MWIR atmospheric window by only changing the quantum well (QW) width at the lattice matched composition. The cut-off wavelength can be shifted up to ～5.0 μm with a QW width of 22 Å in which case very broad spectral response (Δλ/λ_p = ～30%) and a reasonably high peak detectivity are achievable leading to a noise equivalent temperature difference as low as 14 mK (f/2) with 25 μm pitch in a 640 × 512 FPA. We also present the characteristics of InP based two-stack QWIPs with wavelengths properly tuned in the MWIR and LWIR bands for dual color detection. The results clearly demonstrate that InP based material systems display high potential for dual band MWIR/LWIR QWIP FPAs needed by third generation thermal imagers.     

Demonstration of 640 × 512 pixels long-wavelength infrared (LWIR) quantum dot infrared photodetector (QDIP) imaging focal plane array

We have exploited the artificial atom-like properties of epitaxially grown self-assembled quantum dots (QDs) for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays (FPAs). QD infrared photodetectors (QDIPs) are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II–VI material based FPAs. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR dot-in-a-well (DWELL) structures based on the InAs/InGaAs/GaAs material system. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. DWELL QDIPs were also experimentally shown to absorb both 45° and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. The most recent devices exhibit peak responsivity out to 8.1 μm. Peak detectivity of the 8.1 μm devices has reached 1 × 10¹⁰ Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640 × 512 pixels QDIP imaging FPA. This QDIP FPA has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60 K operating temperature.     

Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long wavelength focal plane arrays

Recent trends in infrared detectors are towards large, electronically addressed two-dimensional arrays. In the long wavelength infrared (LWIR) spectral range HgCdTe focal plane arrays (FPAs) occupy a dominant position. However, the slow progress in the development of large LWIR photovoltaic HgCdTe infrared imaging arrays and the rapid achievements of novel semiconductor heterostructure systems have made it necessary to foresee the future development of different material technologies in fabrication large FPAs. Among the competing technologies in LWIR are the quantum well infrared photoconductors (QWIPs) based on lattice matched GaAs/AlGaAs and strained layer InGaAs/AlGaAs material systems. This paper compares the technical merits of two IR detector arrays technologies; photovoltaic HgCdTe and QWIPs. It is clearly shown that LWIR QWIP cannot compete with HgCdTe photodiode as the single device especially at higher temperature operation (>70 K) due to fundamental limitations associated with intersubband transitions. However, the advantage of HgCdTe is less distinct in temperature range below 50 K due to problems involved in HgCdTe material (p-type doping, Shockley–Read recombination, trap-assisted tunnelling, surface and interface instabilities). Even though the QWIP is a photoconductor, several of its properties such as high impedance, fast response time, long integration time, and low power consumption, well satisfy the requirements of fabrication of large FPAs. Due to the high material quality at low temperature, QWIP has potential advantages over HgCdTe for very LWIR (VLWIR) FPA applications in terms of the array size, uniformity, yield and cost of the systems.     

QWIP Status at THALES

Since 2002, the THALES Group has been manufacturing sensitive arrays using QWIP technology based on GaAs and related III–V compounds, at the Alcatel-Thales-III-V Lab (formerly part of THALES Research and Technology Laboratory).In the past researchers claimed many advantages of QWIPs. Uniformity was one of these and has been the key parameter for the production to start. Another widely claimed advantage for QWIPs was the so-called band-gap engineering and versatility of the III–V processing allowing the custom design of quantum structures to fulfil the requirements of specific applications such as very long wavelength (VLWIR) or multi-spectral detection. In this presentation, we give the status of our LWIR QWIP production line, and also the current status of QWIPs for MWIR (<5 μm) and VLWIR (>15 μm) arrays.As the QWIP technology cannot cover the full electromagnetic spectrum, we develop other semiconductor compounds for SWIR and UV applications. We present here the status of our 320 × 256 SWIR module with InGaAs photodiodes.     

Large format voltage tunable dual-band QWIP FPAs

Third generation thermal imagers with dual/multi-band operation capability are the prominent focus of the current research in the field of infrared detection. Dual band quantum-well infrared photodetector (QWIP) focal plane arrays (FPAs) based on various detection and fabrication approaches have been reported. One of these approaches is the three-contact design allowing simultaneous integration of the signals in both bands. However, this approach requires three In bumps on each pixel leading to a complicated fabrication process and lower fill factor.If the spectral response of a two-stack QWIP structure can effectively be shifted between two spectral bands with the applied bias, dual band sensors can be implemented with the conventional FPA fabrication process requiring only one In bump on each pixel making it possible to fabricate large format dual band FPAs at the cost and yield of single band detectors. While some disadvantages of this technique have been discussed in the literature, the detailed assessment of this approach has not been performed at the FPA level yet. We report the characteristics of a large format (640 × 512) voltage tunable dual-band QWIP FPA constructed through series connection of MWIR AlGaAs–InGaAs and LWIR AlGaAs–GaAs multi-quantum well stacks, and provide a detailed assessment of the potential of this approach at both pixel and FPA levels. The dual band FPA having MWIR and LWIR cut-off wavelengths of 5.1 and 8.9 μm provided noise equivalent temperature differences as low as 14 and 31 mK (f/1.5) with switching voltages within the limits applicable by commercial read-out integrated circuits. The results demonstrate the promise of the approach for achieving large format low cost dual band FPAs.     

La détection infrarouge avec les plans focaux non refroidis : état de l'artUncooled focal plane infrared detectors: the state of the art

The emergence of uncooled detectors has opened new opportunities for IR detection for both military and commercial applications. Development of such devices involves a lot of trade-offs between the different parameters that define the technological stack. These trade-offs explain the number of different architectures that are under worldwide development. The key factor is to find a high sensitivity and low noise thermometer material compatible with silicon technology in order to achieve high thermal isolation in the smallest area as possible. Ferroelectric thermometer based hybrid technology and electrical resistive thermometer based (microbolometer) technology are under development. LETI and ULIS have chosen from the very beginning to develop first a monolithic microbolometer technology fully compatible with commercially available CMOS technology and secondly amorphous silicon based thermometer. This silicon approach has the greatest potential for reducing infrared detector manufacturing cost. After the development of the technology, the transfer to industrial facilities has been performed in a short period of time and the production is now ramping up with ULIS team in new facilities. LETI and ULIS are now working to facilitate the IRFPA integration into equipment in order to address a very large market. Achievement of this goal needs the development of smart sensors with on-chip advanced functions and the decrease of manufacturing cost of IRFPA by decreasing the pixel pitch and simplifying the vacuum package. We present in this paper the technology developed by CEA/LETI and its improvement for being able to designs 384×288 and 160×120 arrays with a pitch of 35 μm. Thermographic application needs high stability infrared detector with a precise determination of the amount of absorbed infrared flux. Hence, infrared detector with internal temperature stabilized shield has been developed and characterized. These results will be presented. To cite this article: J.-L. Tissot, C. R. Physique 4 (2003).     

Jules Horowitz Reactor: a high performance material testing reactor

The physical modelling of materials' behaviour under severe conditions is an indispensable element for developing future fission and fusion systems: screening, design, optimisation, processing, licensing, and lifetime assessment of a new generation of structure materials and fuels, which will withstand high fast neutron flux at high in-service temperatures with the production of elements like helium and hydrogen.JANNUS and other analytical experimental tools are developed for this objective. However, a purely analytical approach is not sufficient: there is a need for flexible experiments integrating higher scales and coupled phenomena and offering high quality measurements; these experiments are performed in material testing reactors (MTR). Moreover, complementary representative experiments are usually performed in prototypes or dedicated facilities such as IFMIF for fusion. Only such a consistent set of tools operating on a wide range of scales, can provide an actual prediction capability. A program such as the development of silicon carbide composites (600–1200 °C) illustrates this multiscale strategy.Facing the long term needs of experimental irradiations and the ageing of present MTRs, it was thought necessary to implement a new generation high performance MTR in Europe for supporting existing and future nuclear reactors. The Jules Horowitz Reactor (JHR) project copes with this context. It is funded by an international consortium and will start operation in 2014. JHR will provide improved performances such as high neutron flux (10¹⁵ n/cm²/s above 0.1 MeV) in representative environments (coolant, pressure, temperature) with online monitoring of experimental parameters (including stress and strain control). Experimental devices designing, such as high dpa and small thermal gradients experiments, is now a key objective requiring a broad collaboration to put together present scientific state of art, end-users requirements and advanced instrumentation. To cite this article: D. Iracane et al., C. R. Physique 9 (2008).     

Competitive technologies of third generation infrared photon detectors

Hitherto, two families of multielement infrared (IR) detectors are used for principal military and civilian infrared applications; one is used for scanning systems (first generation) and the other is used for staring systems (second generation). Third generation systems are being developed nowadays. In the common understanding, third generation IR systems provide enhanced capabilities like larger number of pixels, higher frame rates, better thermal resolution as well as multicolour functionality and other on-chip functions. In the paper, issues associated with the development and exploitation of materials used in fabrication of third generation infrared photon detectors are discussed. In this class of detectors two main competitors, HgCdTe photodiodes and quantum well IR photoconductors (QWIPs) are considered. The performance figures of merit of state-of-the-art HgCdTe and QWIP focal plane arrays (FPAs) are similar because the main limitations come from the readout circuits. However, the metallurgical issues of the epitaxial layers such as uniformity and number of defected elements are the serious problems in the case of long wavelength infrared (LWIR) and very LWIR (VLWIR) HgCdTe FPAs. It is predicted that superlattice based InAs/GaInSb system grown on GaSb substrate seems to be an attractive to HgCdTe with good spatial uniformity and an ability to span cutoff wavelength from 3 to 25 μm.     

Les nouvelles générations de détecteurs infrarouge à base de HgCdTeNew generations of infrared detectors based on HgCdTe

The technology of very high performance cooled infrared detectors made with HgCdTe has progressed continuously for ten years and reached today an industrial maturity that allows the production of large size arrays at a more and more reasonable cost. At the same time, new prototypes of more complex sensors have appeared (megapixel arrays, multicolour arrays, high definition long linear arrays, …) that show the strong potentialities of this very high performance technology. This paper presents the technology developed in France and gives the state of the art of products available in industry; it then focuses on some very recent realizations of advanced prototypes made at LETI (dualband arrays, megapixel arrays, …). To cite this article: G. Destefanis, C. R. Physique 4 (2003).     

A lightning initiation mechanism: application to a thunderstorm electrification model

The use of numerical models has greatly increased our understanding of the electrical and microphysical process within electrified clouds. We use the University of Washington, 1.5-dimensional thunderstorm model to examine the effects of including a runaway electron based lightning initiation mechanism. We find that this mechanism can significantly alter the electrification history of modeled storms and produce vertical electric field profiles that are very similar to those of observed storms. To cite this article: R. Solomon et al., C. R. Physique 3 (2002) 1325–1333.     

Fundamental processes in long air gap discharges

The development of atmospheric lightning is initiated and sustained by the formation in virgin air of ‘streamer corona’ and ‘leader’ discharges, very similar to those observed in laboratory long sparks. Therefore, the experimental and theoretical investigations of these laboratory discharges have become of large interest to improve the physical knowledge of the lightning process and to develop self-consistent models that could be applied to new protection concepts.In the present paper the fundamental processes of the subsequent phases of long air gap discharges are analyzed, from the first corona inception and development to the leader channel formation and propagation. For all these processes simulations models are discussed that have been essentially derived and simplified by the authors, in order to develop sequential time-dependent simulation of the laboratory breakdown, with both positive and negative voltages. The possibility of extending these models to the case of natural lightning is discussed in the companion paper, presented in this same volume. To cite this article: I. Gallimberti et al., C. R. Physique 3 (2002) 1335–1359.     

Long wavelength infrared (LWIR) photodetection in a modulation doped thyristor

A modulation doped thyristor concept is described for LWIR photodetection based upon intersubband bound to continuum absorption. The intersubband absorption generates photocurrent from undoped quantum wells to modulation doped layers (MDL). Due to the lower dark current compared to conventional quantum well infrared photodetectors (QWIPs), the thyristor infrared detector operates with little or no cooling and with similar or better performance than QWIPs at low temperatures. The operating characteristics of absorption coefficient, quantum efficiency, responsivity, detectivity, infrared gain, and dark current are determined as a function of thyristor voltage and input power level in the range of 1 μW/cm².     

Pseudomorphic InGaAs quantum-wire FETs with negative differential resistance

Pseudomorphic trench-type InGaAs/InAlAs quantum-wire field-effect transistors (QWR-FET) are realized by selective molecular beam epitaxy. The pseudomorphic QWR-FET has a negative differential resistance (NDR) effect with a low source–drain voltage (0.3 V). The NDR spectra are clearly observed in the 50–220 K temperature range. The operating current of the pseudomorphic QWR-FET is twice that of a lattice-matched QWR-FET, and this is thought to be due to the higher electron mobility.     

De la microstructure du polymère à ses propriétés rhéologiquesFrom the microstructure of polymers towards their rheological properties

We extend the previous work by Benallal et al. on the relationship between structure and rheological properties of linear polymer melts. The aim of this paper is to quantify the effect of the chemical structure on the viscoelastic properties. We show that these properties are governed by the monomer dimensions and the interaction energy. To cite this article: A. Allal et al., C. R. Physique 3 (2002) 1451–1458.     

Operating temperature and the responsivity of split-off band detectors

A GaAs/AlGaAs heterojunction is used as a spin-split-off band IR detector operating at or around room temperature. This detector structure followed a similar layer architecture to the quantum well IR photo detectors (QWIP) and Heterojunction Interfacial Work function Internal Photoemission (HEIWIP) detectors. Compared to QWIPs, the emitter layer thickness is increased to avoid confinement. Unlike either the QWIPs or HEIWIPs, these detectors will have two energy gaps (barriers) to obtain the wavelength threshold which could be used to design detectors either for optimum operating temperature or optimum responsivity. The free carrier energy gap is determined by the Al fraction and the spin-split-off transition energy provides another handle on controlling the effective threshold of the detector. Unlike QWIPs, these will also detect normal incidence radiation. A preliminary detector showed a peak responsivity of 0.29 mA/W at 2.5 μm at room temperature.     

HgCdTe technology in France

SOFRADIR is one of the leading companies worldwide for the production of second generation InfraRed (IR) detectors. This success is due to the top level quality of the unique and production oriented French HgCdTe technology for manufacturing IR focal plane arrays based on an HgCdTe array and a CMOS readout and multiplexed silicon array. This technology and main products are presented in this paper. Finally, in order to prepare for future military and industrial needs, SOFRADIR has been working in close relationship with CEA-LETI/LIR on third generation developments based on HgCdTe material using Molecular Beam Epitaxy (MBE) growth. To cite this article: P. Tribolet, C. R. Physique 4 (2003).     

Some microphysical and electrical aspects of a Cloud Resolving Model: description and thunderstorm case study

An electrification scheme, consistent with the mixed-phase microphysical parameterization, has been developed for the French cloud resolving model MésoNH. There are four successive steps: (i) charge separation is assumed to result only from non-inductive processes; (ii) electrical charges carried by the different hydrometeor species are transported along the air flow and redistributed according to the microphysical processes; (iii) the electric field is deduced from the integration of a modified Poisson equation; (iv) a lightning parameterization simulates triggering, propagation and pseudo-fractal branching of the flashes and associated charge neutralization. Two numerical experiments are conducted firstly to evaluate the performances of the lightning scheme, secondly to test the simulated evolution of the electrical characteristics of a idealized supercellular storm. To cite this article: G. Molinié et al., C. R. Physique 3 (2002) 1305–1324.     

Radiation effects in concentrated alloys and compounds: equilibrium and kinetics of driven systems

What organization of condensed matter does resist irradiation, as a function of irradiation conditions? How to characterize the latter? We survey the advances in the field during the past three decades, when irradiation effects reduce to nuclear collisions. While in simple cases (structure defined by a scalar order parameter) one may define a stochastic potential, which yields the stationary states of the compounds under irradiation and their respective stability, in more general cases, we are left with brute force atomistic simulations to explore materials' behaviour as a function of irradiation conditions. Special attention is given to the kinetics of concentration fields under irradiation, a question with several practical implications. We conclude that irradiation conditions are best defined by three parameters: the cascade features (number of displacements and replacements, length of replacement sequences, …), the frequency of cascade occurrence, and the cumulated dose. We suggest cascade features be named ‘(elementary) dose’ and the cascade occurrence frequency ‘dose rate’. To cite this article: G. Martin, P. Bellon, C. R. Physique 9 (2008).     

Parametric generation of twin photons in vertical triple microcavities

We report the realization of a monolithic vertical-cavity, surface emitting micro-optical parametric conversion nanostructure, triply resonant with the parametric frequencies, allowing parametric oscillation with ultra-low pump power threshold. The photonic phase-space naturally provides triple resonance for the parametric frequencies, together with built-in cavity phase-matching for the pump wave at normal incidence. Parametric oscillation is observed in both the strong and weak exciton–photon coupling regime, allowing a high operating temperature. Signal and idler beams can be collected at 0° or at finite angles. The OPO threshold is low enough to envisage the realization of an all-semiconductor electrically-pumped micro-parametric oscillator. To cite this article: C. Diederichs et al., C. R. Physique 8 (2007).